JPS4940844B1 - - Google Patents
Info
- Publication number
- JPS4940844B1 JPS4940844B1 JP44103083A JP10308369A JPS4940844B1 JP S4940844 B1 JPS4940844 B1 JP S4940844B1 JP 44103083 A JP44103083 A JP 44103083A JP 10308369 A JP10308369 A JP 10308369A JP S4940844 B1 JPS4940844 B1 JP S4940844B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
Landscapes
- Weting (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78773868A | 1968-12-30 | 1968-12-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4940844B1 true JPS4940844B1 (cg-RX-API-DMAC7.html) | 1974-11-06 |
Family
ID=25142391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP44103083A Pending JPS4940844B1 (cg-RX-API-DMAC7.html) | 1968-12-30 | 1969-12-23 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3607480A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS4940844B1 (cg-RX-API-DMAC7.html) |
| DE (1) | DE1962018A1 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2027318A1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1265038A (cg-RX-API-DMAC7.html) |
| NL (1) | NL6918927A (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010515245A (ja) * | 2006-12-21 | 2010-05-06 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | 窒化ケイ素の選択的除去のための組成物および方法 |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3979241A (en) * | 1968-12-28 | 1976-09-07 | Fujitsu Ltd. | Method of etching films of silicon nitride and silicon dioxide |
| US3913214A (en) * | 1970-05-05 | 1975-10-21 | Licentia Gmbh | Method of producing a semiconductor device |
| US3694700A (en) * | 1971-02-19 | 1972-09-26 | Nasa | Integrated circuit including field effect transistor and cerment resistor |
| US3842490A (en) * | 1971-04-21 | 1974-10-22 | Signetics Corp | Semiconductor structure with sloped side walls and method |
| US3859222A (en) * | 1971-07-19 | 1975-01-07 | North American Rockwell | Silicon nitride-silicon oxide etchant |
| US3860466A (en) * | 1971-10-22 | 1975-01-14 | Texas Instruments Inc | Nitride composed masking for integrated circuits |
| US3808069A (en) * | 1972-03-15 | 1974-04-30 | Bell Telephone Labor Inc | Forming windows in composite dielectric layers |
| US4029542A (en) * | 1975-09-19 | 1977-06-14 | Rca Corporation | Method for sloping the sidewalls of multilayer P+ PN+ junction mesa structures |
| JPS5334484A (en) * | 1976-09-10 | 1978-03-31 | Toshiba Corp | Forming method for multi layer wiring |
| US4092211A (en) * | 1976-11-18 | 1978-05-30 | Northern Telecom Limited | Control of etch rate of silicon dioxide in boiling phosphoric acid |
| NL7706802A (nl) * | 1977-06-21 | 1978-12-27 | Philips Nv | Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze. |
| US4269654A (en) * | 1977-11-18 | 1981-05-26 | Rca Corporation | Silicon nitride and silicon oxide etchant |
| US4254161A (en) * | 1979-08-16 | 1981-03-03 | International Business Machines Corporation | Prevention of low pressure chemical vapor deposition silicon dioxide undercutting and flaking |
| DE3343704A1 (de) * | 1983-12-02 | 1985-06-13 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum aetzen von lochrasterplatten, insbesondere fuer plasma-kathoden-display |
| US5043224A (en) * | 1988-05-12 | 1991-08-27 | Lehigh University | Chemically enhanced thermal oxidation and nitridation of silicon and products thereof |
| EP0375255A3 (en) * | 1988-12-21 | 1991-09-04 | AT&T Corp. | Method for reducing mobile ion contamination in semiconductor integrated circuits |
| US5198298A (en) * | 1989-10-24 | 1993-03-30 | Advanced Micro Devices, Inc. | Etch stop layer using polymers |
| US5114532A (en) * | 1991-03-21 | 1992-05-19 | Seagate Technology, Inc. | Process of etching iron-silicon-aluminum trialloys and etchant solutions used therefor |
| US5057450A (en) * | 1991-04-01 | 1991-10-15 | International Business Machines Corporation | Method for fabricating silicon-on-insulator structures |
| US6048406A (en) * | 1997-04-08 | 2000-04-11 | Texas Instruments Incorporated | Benign method for etching silicon dioxide |
| US6287983B2 (en) * | 1997-12-31 | 2001-09-11 | Texas Instruments Incorporated | Selective nitride etching with silicate ion pre-loading |
| US6037271A (en) * | 1998-10-21 | 2000-03-14 | Fsi International, Inc. | Low haze wafer treatment process |
| EP1386351A1 (en) * | 2001-04-27 | 2004-02-04 | Koninklijke Philips Electronics N.V. | Method of wet etching a silicon and nitrogen containing material |
| US6835667B2 (en) * | 2002-06-14 | 2004-12-28 | Fsi International, Inc. | Method for etching high-k films in solutions comprising dilute fluoride species |
| KR20080079999A (ko) * | 2007-02-28 | 2008-09-02 | 토소가부시키가이샤 | 에칭 방법 및 그것에 이용되는 에칭용 조성물 |
| DE102007030957A1 (de) * | 2007-07-04 | 2009-01-08 | Siltronic Ag | Verfahren zum Reinigen einer Halbleiterscheibe mit einer Reinigungslösung |
| SG182081A1 (en) * | 2010-12-13 | 2012-07-30 | Rohm & Haas Elect Mat | Electrochemical etching of semiconductors |
| CN102244149A (zh) * | 2011-07-20 | 2011-11-16 | 苏州阿特斯阳光电力科技有限公司 | 一种硅太阳能电池扩散死层的去除方法 |
| KR20220013471A (ko) * | 2012-06-29 | 2022-02-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 디스플레이 디바이스 |
| WO2020203697A1 (ja) * | 2019-03-29 | 2020-10-08 | デンカ株式会社 | 窒化ケイ素粉末及びその製造方法、並びに窒化ケイ素焼結体の製造方法 |
-
1968
- 1968-12-30 US US787738A patent/US3607480A/en not_active Expired - Lifetime
-
1969
- 1969-11-21 GB GB1265038D patent/GB1265038A/en not_active Expired
- 1969-12-11 DE DE19691962018 patent/DE1962018A1/de active Pending
- 1969-12-17 NL NL6918927A patent/NL6918927A/xx unknown
- 1969-12-22 FR FR6944328A patent/FR2027318A1/fr not_active Withdrawn
- 1969-12-23 JP JP44103083A patent/JPS4940844B1/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010515245A (ja) * | 2006-12-21 | 2010-05-06 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | 窒化ケイ素の選択的除去のための組成物および方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US3607480A (en) | 1971-09-21 |
| DE1962018A1 (de) | 1970-07-09 |
| FR2027318A1 (cg-RX-API-DMAC7.html) | 1970-09-25 |
| NL6918927A (cg-RX-API-DMAC7.html) | 1970-07-02 |
| GB1265038A (cg-RX-API-DMAC7.html) | 1972-03-01 |