JPS49390B1 - - Google Patents
Info
- Publication number
- JPS49390B1 JPS49390B1 JP45073104A JP7310470A JPS49390B1 JP S49390 B1 JPS49390 B1 JP S49390B1 JP 45073104 A JP45073104 A JP 45073104A JP 7310470 A JP7310470 A JP 7310470A JP S49390 B1 JPS49390 B1 JP S49390B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/959—Mechanical polishing of wafer
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US87832069A | 1969-11-20 | 1969-11-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS49390B1 true JPS49390B1 (ja) | 1974-01-07 |
Family
ID=25371790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP45073104A Pending JPS49390B1 (ja) | 1969-11-20 | 1970-08-20 |
Country Status (3)
Country | Link |
---|---|
US (1) | US3669774A (ja) |
JP (1) | JPS49390B1 (ja) |
DE (1) | DE2035384A1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4089735A (en) * | 1968-06-05 | 1978-05-16 | Siemens Aktiengesellschaft | Method for epitactic precipitation of crystalline material from a gaseous phase, particularly for semiconductors |
US6076652A (en) | 1971-04-16 | 2000-06-20 | Texas Instruments Incorporated | Assembly line system and apparatus controlling transfer of a workpiece |
US3900363A (en) * | 1972-11-15 | 1975-08-19 | Nippon Columbia | Method of making crystal |
US4040892A (en) * | 1976-04-12 | 1977-08-09 | General Electric Company | Method of etching materials including a major constituent of tin oxide |
NL7906996A (nl) * | 1979-09-20 | 1981-03-24 | Philips Nv | Werkwijze voor het reinigen van een reaktor. |
US4310380A (en) * | 1980-04-07 | 1982-01-12 | Bell Telephone Laboratories, Incorporated | Plasma etching of silicon |
JPS57190320A (en) * | 1981-05-20 | 1982-11-22 | Toshiba Corp | Dry etching method |
US4498953A (en) * | 1983-07-27 | 1985-02-12 | At&T Bell Laboratories | Etching techniques |
JP2669460B2 (ja) * | 1986-10-29 | 1997-10-27 | 株式会社日立製作所 | エツチング方法 |
DE3752259T2 (de) * | 1986-12-19 | 1999-10-14 | Applied Materials | Bromine-Ätzverfahren für Silizium |
GB2218567A (en) * | 1988-05-13 | 1989-11-15 | Philips Electronic Associated | A method of forming an epitaxial layer of silicon |
US4885056A (en) * | 1988-09-02 | 1989-12-05 | Motorola Inc. | Method of reducing defects on semiconductor wafers |
JPH0864559A (ja) * | 1994-06-14 | 1996-03-08 | Fsi Internatl Inc | 基板面から不要な物質を除去する方法 |
US6124211A (en) * | 1994-06-14 | 2000-09-26 | Fsi International, Inc. | Cleaning method |
US5534107A (en) * | 1994-06-14 | 1996-07-09 | Fsi International | UV-enhanced dry stripping of silicon nitride films |
US5635102A (en) | 1994-09-28 | 1997-06-03 | Fsi International | Highly selective silicon oxide etching method |
DE19506118C1 (de) * | 1995-02-22 | 1996-08-14 | Karlsruhe Forschzent | Verfahren zum plasmalosen Ätzen eines Silicium-Substrats |
US7776228B2 (en) * | 2006-04-11 | 2010-08-17 | Ebara Corporation | Catalyst-aided chemical processing method |
US8734661B2 (en) | 2007-10-15 | 2014-05-27 | Ebara Corporation | Flattening method and flattening apparatus |
-
1969
- 1969-11-20 US US878320A patent/US3669774A/en not_active Expired - Lifetime
-
1970
- 1970-07-16 DE DE19702035384 patent/DE2035384A1/de active Pending
- 1970-08-20 JP JP45073104A patent/JPS49390B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US3669774A (en) | 1972-06-13 |
DE2035384A1 (de) | 1971-05-27 |