JPS4934276A - - Google Patents

Info

Publication number
JPS4934276A
JPS4934276A JP7617772A JP7617772A JPS4934276A JP S4934276 A JPS4934276 A JP S4934276A JP 7617772 A JP7617772 A JP 7617772A JP 7617772 A JP7617772 A JP 7617772A JP S4934276 A JPS4934276 A JP S4934276A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7617772A
Other languages
Japanese (ja)
Other versions
JPS5247875B2 (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7617772A priority Critical patent/JPS5247875B2/ja
Priority to GB3494573A priority patent/GB1414060A/en
Priority to CA177,297A priority patent/CA987795A/en
Priority to IT69257/73A priority patent/IT991882B/it
Priority to DE2338244A priority patent/DE2338244B2/de
Priority to FR7327721A priority patent/FR2195069B1/fr
Priority to US383653A priority patent/US3909317A/en
Publication of JPS4934276A publication Critical patent/JPS4934276A/ja
Publication of JPS5247875B2 publication Critical patent/JPS5247875B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP7617772A 1972-07-28 1972-07-28 Expired JPS5247875B2 (en:Method)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP7617772A JPS5247875B2 (en:Method) 1972-07-28 1972-07-28
GB3494573A GB1414060A (en) 1972-07-28 1973-07-23 Semoconductor devices
CA177,297A CA987795A (en) 1972-07-28 1973-07-25 Apparatus and method for making multi-layer epitaxial growth devices
IT69257/73A IT991882B (it) 1972-07-28 1973-07-26 Procedimento e dispositivo per la produzione di semiconduttori com prendenti piu strati epitassiali
DE2338244A DE2338244B2 (de) 1972-07-28 1973-07-27 Verfahren und Vorrichtung zur Herstellung eines mehrschichtig aufgebauten Halbleiter-Bauelementes mit epitaktischen Aufwachsschichten
FR7327721A FR2195069B1 (en:Method) 1972-07-28 1973-07-27
US383653A US3909317A (en) 1972-07-28 1973-07-30 Formation of abrupt junctions in liquid phase epitaxy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7617772A JPS5247875B2 (en:Method) 1972-07-28 1972-07-28

Publications (2)

Publication Number Publication Date
JPS4934276A true JPS4934276A (en:Method) 1974-03-29
JPS5247875B2 JPS5247875B2 (en:Method) 1977-12-06

Family

ID=13597806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7617772A Expired JPS5247875B2 (en:Method) 1972-07-28 1972-07-28

Country Status (1)

Country Link
JP (1) JPS5247875B2 (en:Method)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109180A (en:Method) * 1974-02-06 1975-08-28
JPS5171883A (ja) * 1974-12-20 1976-06-22 Nippon Telegraph & Telephone Ekisoepitakisharuseichoho oyobi sorenimochiiru sochi
JPS54103745U (en:Method) * 1977-12-30 1979-07-21

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109180A (en:Method) * 1974-02-06 1975-08-28
JPS5171883A (ja) * 1974-12-20 1976-06-22 Nippon Telegraph & Telephone Ekisoepitakisharuseichoho oyobi sorenimochiiru sochi
JPS54103745U (en:Method) * 1977-12-30 1979-07-21

Also Published As

Publication number Publication date
JPS5247875B2 (en:Method) 1977-12-06

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