JPS4931270A - - Google Patents
Info
- Publication number
- JPS4931270A JPS4931270A JP7320372A JP7320372A JPS4931270A JP S4931270 A JPS4931270 A JP S4931270A JP 7320372 A JP7320372 A JP 7320372A JP 7320372 A JP7320372 A JP 7320372A JP S4931270 A JPS4931270 A JP S4931270A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7320372A JPS5428072B2 (enExample) | 1972-07-20 | 1972-07-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7320372A JPS5428072B2 (enExample) | 1972-07-20 | 1972-07-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4931270A true JPS4931270A (enExample) | 1974-03-20 |
| JPS5428072B2 JPS5428072B2 (enExample) | 1979-09-13 |
Family
ID=13511340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7320372A Expired JPS5428072B2 (enExample) | 1972-07-20 | 1972-07-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5428072B2 (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54136282A (en) * | 1978-04-14 | 1979-10-23 | Nippon Telegr & Teleph Corp <Ntt> | Compound semiconductor light emitting element and its manufacture |
| JPS56162841A (en) * | 1980-05-20 | 1981-12-15 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for insulating film of compound semiconductor |
| JPS61128520A (ja) * | 1984-11-27 | 1986-06-16 | Sony Corp | 不純物拡散方法 |
| JPS62141741A (ja) * | 1985-12-16 | 1987-06-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| WO2002017450A1 (fr) * | 2000-08-22 | 2002-02-28 | Mitsui Chemicals Inc. | Procede de fabrication de dispositif laser a semiconducteur |
-
1972
- 1972-07-20 JP JP7320372A patent/JPS5428072B2/ja not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54136282A (en) * | 1978-04-14 | 1979-10-23 | Nippon Telegr & Teleph Corp <Ntt> | Compound semiconductor light emitting element and its manufacture |
| JPS56162841A (en) * | 1980-05-20 | 1981-12-15 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for insulating film of compound semiconductor |
| JPS61128520A (ja) * | 1984-11-27 | 1986-06-16 | Sony Corp | 不純物拡散方法 |
| JPS62141741A (ja) * | 1985-12-16 | 1987-06-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| WO2002017450A1 (fr) * | 2000-08-22 | 2002-02-28 | Mitsui Chemicals Inc. | Procede de fabrication de dispositif laser a semiconducteur |
| US6703254B2 (en) | 2000-08-22 | 2004-03-09 | Mitsui Chemicals, Inc. | Method for manufacturing semiconductor laser device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5428072B2 (enExample) | 1979-09-13 |