JPS4930319B1 - - Google Patents

Info

Publication number
JPS4930319B1
JPS4930319B1 JP44068031A JP6803169A JPS4930319B1 JP S4930319 B1 JPS4930319 B1 JP S4930319B1 JP 44068031 A JP44068031 A JP 44068031A JP 6803169 A JP6803169 A JP 6803169A JP S4930319 B1 JPS4930319 B1 JP S4930319B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44068031A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP44068031A priority Critical patent/JPS4930319B1/ja
Priority to FR7030553A priority patent/FR2059024A5/fr
Priority to DE19702042793 priority patent/DE2042793B2/de
Priority to US67879A priority patent/US3641974A/en
Publication of JPS4930319B1 publication Critical patent/JPS4930319B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
JP44068031A 1969-08-29 1969-08-29 Pending JPS4930319B1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP44068031A JPS4930319B1 (ja) 1969-08-29 1969-08-29
FR7030553A FR2059024A5 (ja) 1969-08-29 1970-08-20
DE19702042793 DE2042793B2 (de) 1969-08-29 1970-08-28 Vorrichtung zum aufbringen von filmen durch gasphasenreaktion
US67879A US3641974A (en) 1969-08-29 1970-08-28 Apparatus for forming films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44068031A JPS4930319B1 (ja) 1969-08-29 1969-08-29

Publications (1)

Publication Number Publication Date
JPS4930319B1 true JPS4930319B1 (ja) 1974-08-12

Family

ID=13362013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44068031A Pending JPS4930319B1 (ja) 1969-08-29 1969-08-29

Country Status (4)

Country Link
US (1) US3641974A (ja)
JP (1) JPS4930319B1 (ja)
DE (1) DE2042793B2 (ja)
FR (1) FR2059024A5 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5217214U (ja) * 1975-07-24 1977-02-07

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3757733A (en) * 1971-10-27 1973-09-11 Texas Instruments Inc Radial flow reactor
US3886025A (en) * 1972-08-24 1975-05-27 Ibm Ferrite head
JPS51143583A (en) * 1975-06-06 1976-12-09 Hitachi Ltd Method for regulating gas-phase chemical reaction
US4033286A (en) * 1976-07-12 1977-07-05 California Institute Of Technology Chemical vapor deposition reactor
US4062318A (en) * 1976-11-19 1977-12-13 Rca Corporation Apparatus for chemical vapor deposition
US4084540A (en) * 1977-05-19 1978-04-18 Discwasher, Inc. Apparatus for applying lubricating and protective film to phonograph records
US4141405A (en) * 1977-07-27 1979-02-27 Sri International Method of fabricating a funnel-shaped miniature electrode for use as a field ionization source
US4777022A (en) * 1984-08-28 1988-10-11 Stephen I. Boldish Epitaxial heater apparatus and process
JPS61191015A (ja) * 1985-02-20 1986-08-25 Hitachi Ltd 半導体の気相成長方法及びその装置
US4839145A (en) * 1986-08-27 1989-06-13 Massachusetts Institute Of Technology Chemical vapor deposition reactor
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
DE3707672A1 (de) * 1987-03-10 1988-09-22 Sitesa Sa Epitaxieanlage
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4986215A (en) * 1988-09-01 1991-01-22 Kyushu Electronic Metal Co., Ltd. Susceptor for vapor-phase growth system
EP0449821B1 (en) * 1988-12-21 1994-05-25 Lam Research Corporation Chemical vapor deposition reactor and method for use thereof
US5446825A (en) * 1991-04-24 1995-08-29 Texas Instruments Incorporated High performance multi-zone illuminator module for semiconductor wafer processing
US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
US5434110A (en) * 1992-06-15 1995-07-18 Materials Research Corporation Methods of chemical vapor deposition (CVD) of tungsten films on patterned wafer substrates
JP3566740B2 (ja) * 1992-09-30 2004-09-15 アプライド マテリアルズ インコーポレイテッド 全ウエハデポジション用装置
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
JP3467960B2 (ja) * 1996-02-29 2003-11-17 信越半導体株式会社 半導体単結晶薄膜の製造方法および装置
US5954881A (en) * 1997-01-28 1999-09-21 Northrop Grumman Corporation Ceiling arrangement for an epitaxial growth reactor
US5993557A (en) * 1997-02-25 1999-11-30 Shin-Etsu Handotai Co., Ltd. Apparatus for growing single-crystalline semiconductor film
EP1036407A1 (en) * 1997-11-03 2000-09-20 ASM America, Inc. Method of processing wafers with low mass support
JP2001522142A (ja) 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 改良された低質量ウェハ支持システム
EP1393355A2 (de) * 2001-05-18 2004-03-03 Mattson Thermal Products GmbH Vorrichtung zur aufnahme von scheibenförmigen objekten
DE10156441A1 (de) * 2001-05-18 2002-11-21 Mattson Thermal Products Gmbh Vorrichtung zur Aufnahme von scheibenförmigen Objekten und Vorrichtung zur Handhabung von Objekten
DE10157946A1 (de) * 2001-11-27 2003-06-05 Osram Opto Semiconductors Gmbh Vorrichtung und Verfahren zum Wachsen von Schichten auf ein Substrat
US20050170314A1 (en) * 2002-11-27 2005-08-04 Richard Golden Dental pliers design with offsetting jaw and pad elements for assisting in removing upper and lower teeth and method for removing teeth utilizing the dental plier design
US8801857B2 (en) * 2008-10-31 2014-08-12 Asm America, Inc. Self-centering susceptor ring assembly
US9885123B2 (en) 2011-03-16 2018-02-06 Asm America, Inc. Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow
US11961756B2 (en) 2019-01-17 2024-04-16 Asm Ip Holding B.V. Vented susceptor
USD914620S1 (en) 2019-01-17 2021-03-30 Asm Ip Holding B.V. Vented susceptor
USD920936S1 (en) 2019-01-17 2021-06-01 Asm Ip Holding B.V. Higher temperature vented susceptor
US11404302B2 (en) 2019-05-22 2022-08-02 Asm Ip Holding B.V. Substrate susceptor using edge purging
US11764101B2 (en) 2019-10-24 2023-09-19 ASM IP Holding, B.V. Susceptor for semiconductor substrate processing

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3473954A (en) * 1965-12-08 1969-10-21 Ethyl Corp Method and apparatus for tunnel plating
US3464846A (en) * 1965-12-08 1969-09-02 Ethyl Corp Method and apparatus for centrifugally plating

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5217214U (ja) * 1975-07-24 1977-02-07

Also Published As

Publication number Publication date
FR2059024A5 (ja) 1971-05-28
DE2042793A1 (de) 1972-03-09
DE2042793B2 (de) 1977-11-10
US3641974A (en) 1972-02-15

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