JPS4929770A - - Google Patents

Info

Publication number
JPS4929770A
JPS4929770A JP7078372A JP7078372A JPS4929770A JP S4929770 A JPS4929770 A JP S4929770A JP 7078372 A JP7078372 A JP 7078372A JP 7078372 A JP7078372 A JP 7078372A JP S4929770 A JPS4929770 A JP S4929770A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7078372A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7078372A priority Critical patent/JPS4929770A/ja
Publication of JPS4929770A publication Critical patent/JPS4929770A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
JP7078372A 1972-07-17 1972-07-17 Pending JPS4929770A (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7078372A JPS4929770A (de) 1972-07-17 1972-07-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7078372A JPS4929770A (de) 1972-07-17 1972-07-17

Publications (1)

Publication Number Publication Date
JPS4929770A true JPS4929770A (de) 1974-03-16

Family

ID=13441452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7078372A Pending JPS4929770A (de) 1972-07-17 1972-07-17

Country Status (1)

Country Link
JP (1) JPS4929770A (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819954U (ja) * 1981-07-29 1983-02-07 東京パ−ツ株式会社 ブラシ付蓋を有する粘性液用容器
US5998810A (en) * 1994-12-19 1999-12-07 Kabushiki Kaisha Toshiba Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer
US6388323B1 (en) 1994-02-28 2002-05-14 Sumitomo Chemical Co., Ltd. Electrode material and electrode for III-V group compound semiconductor
JP2015530967A (ja) * 2012-08-24 2015-10-29 シックスポイント マテリアルズ, インコーポレイテッド ビスマスでドープされた半絶縁iii族窒化物ウエハおよびその生産方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819954U (ja) * 1981-07-29 1983-02-07 東京パ−ツ株式会社 ブラシ付蓋を有する粘性液用容器
JPS6030204Y2 (ja) * 1981-07-29 1985-09-11 東京パ−ツ株式会社 ブラシ付蓋を有する粘性液用容器
US6388323B1 (en) 1994-02-28 2002-05-14 Sumitomo Chemical Co., Ltd. Electrode material and electrode for III-V group compound semiconductor
US5998810A (en) * 1994-12-19 1999-12-07 Kabushiki Kaisha Toshiba Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer
JP2015530967A (ja) * 2012-08-24 2015-10-29 シックスポイント マテリアルズ, インコーポレイテッド ビスマスでドープされた半絶縁iii族窒化物ウエハおよびその生産方法

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