JPS4924374A - - Google Patents
Info
- Publication number
- JPS4924374A JPS4924374A JP6426572A JP6426572A JPS4924374A JP S4924374 A JPS4924374 A JP S4924374A JP 6426572 A JP6426572 A JP 6426572A JP 6426572 A JP6426572 A JP 6426572A JP S4924374 A JPS4924374 A JP S4924374A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6426572A JPS4924374A (enExample) | 1972-06-27 | 1972-06-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6426572A JPS4924374A (enExample) | 1972-06-27 | 1972-06-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4924374A true JPS4924374A (enExample) | 1974-03-04 |
Family
ID=13253184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6426572A Pending JPS4924374A (enExample) | 1972-06-27 | 1972-06-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS4924374A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56149473U (enExample) * | 1981-03-26 | 1981-11-10 | ||
| JPH07131035A (ja) * | 1993-11-01 | 1995-05-19 | Masaki Esashi | ピエゾ抵抗素子の製造方法 |
| JP2020193922A (ja) * | 2019-05-30 | 2020-12-03 | 三菱電機株式会社 | 半導体歪検出素子及びmemsアクチュエータデバイス |
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1972
- 1972-06-27 JP JP6426572A patent/JPS4924374A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56149473U (enExample) * | 1981-03-26 | 1981-11-10 | ||
| JPH07131035A (ja) * | 1993-11-01 | 1995-05-19 | Masaki Esashi | ピエゾ抵抗素子の製造方法 |
| JP2020193922A (ja) * | 2019-05-30 | 2020-12-03 | 三菱電機株式会社 | 半導体歪検出素子及びmemsアクチュエータデバイス |