JPS4921474B1 - - Google Patents

Info

Publication number
JPS4921474B1
JPS4921474B1 JP43003205A JP320568A JPS4921474B1 JP S4921474 B1 JPS4921474 B1 JP S4921474B1 JP 43003205 A JP43003205 A JP 43003205A JP 320568 A JP320568 A JP 320568A JP S4921474 B1 JPS4921474 B1 JP S4921474B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP43003205A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4921474B1 publication Critical patent/JPS4921474B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0813—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
    • H01L29/66303—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
JP43003205A 1967-01-20 1968-01-20 Pending JPS4921474B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61067067A 1967-01-20 1967-01-20

Publications (1)

Publication Number Publication Date
JPS4921474B1 true JPS4921474B1 (ja) 1974-06-01

Family

ID=24445964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP43003205A Pending JPS4921474B1 (ja) 1967-01-20 1968-01-20

Country Status (5)

Country Link
US (1) US3448354A (ja)
JP (1) JPS4921474B1 (ja)
DE (1) DE1639373C2 (ja)
FR (1) FR1551611A (ja)
GB (1) GB1145120A (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893228A (en) * 1972-10-02 1975-07-08 Motorola Inc Silicon pressure sensor
US4949150A (en) * 1986-04-17 1990-08-14 Exar Corporation Programmable bonding pad with sandwiched silicon oxide and silicon nitride layers
US8092734B2 (en) * 2004-05-13 2012-01-10 Aptina Imaging Corporation Covers for microelectronic imagers and methods for wafer-level packaging of microelectronics imagers
US9190549B2 (en) * 2012-02-28 2015-11-17 International Business Machines Corporation Solar cell made using a barrier layer between p-type and intrinsic layers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE533946A (ja) * 1953-12-09
US2831787A (en) * 1954-07-27 1958-04-22 Emeis
US3088888A (en) * 1959-03-31 1963-05-07 Ibm Methods of etching a semiconductor device
NL301034A (ja) * 1962-11-27
US3381182A (en) * 1964-10-19 1968-04-30 Philco Ford Corp Microcircuits having buried conductive layers
FR1483998A (ja) * 1965-05-14 1967-09-13
US3341743A (en) * 1965-10-21 1967-09-12 Texas Instruments Inc Integrated circuitry having discrete regions of semiconductor material isolated by an insulating material

Also Published As

Publication number Publication date
GB1145120A (en) 1969-03-12
DE1639373C2 (de) 1978-11-09
FR1551611A (ja) 1968-12-27
US3448354A (en) 1969-06-03
DE1639373B1 (de) 1971-10-21

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