JPS4918583B1 - - Google Patents
Info
- Publication number
- JPS4918583B1 JPS4918583B1 JP248870A JP248870A JPS4918583B1 JP S4918583 B1 JPS4918583 B1 JP S4918583B1 JP 248870 A JP248870 A JP 248870A JP 248870 A JP248870 A JP 248870A JP S4918583 B1 JPS4918583 B1 JP S4918583B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP248870A JPS4918583B1 (un) | 1970-01-09 | 1970-01-09 | |
DE19712100692 DE2100692A1 (de) | 1970-01-09 | 1971-01-08 | Verfahren zum Herstellen einer epitaxisch gewachsenen Schicht eines GaAs tief 1 χ P tief χ Halbleitermaterial |
FR7100447A FR2075325A5 (un) | 1970-01-09 | 1971-01-08 | |
NL7100218A NL7100218A (un) | 1970-01-09 | 1971-01-08 | |
US05/105,006 US4007074A (en) | 1970-01-09 | 1971-01-08 | Method of making an epitaxial growth layer of GaAs1-x Px compound semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP248870A JPS4918583B1 (un) | 1970-01-09 | 1970-01-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4918583B1 true JPS4918583B1 (un) | 1974-05-11 |
Family
ID=11530729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP248870A Pending JPS4918583B1 (un) | 1970-01-09 | 1970-01-09 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS4918583B1 (un) |
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1970
- 1970-01-09 JP JP248870A patent/JPS4918583B1/ja active Pending