JPS4918582B1 - - Google Patents
Info
- Publication number
- JPS4918582B1 JPS4918582B1 JP248770A JP248770A JPS4918582B1 JP S4918582 B1 JPS4918582 B1 JP S4918582B1 JP 248770 A JP248770 A JP 248770A JP 248770 A JP248770 A JP 248770A JP S4918582 B1 JPS4918582 B1 JP S4918582B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP248770A JPS4918582B1 (de) | 1970-01-09 | 1970-01-09 | |
| FR7100447A FR2075325A5 (de) | 1970-01-09 | 1971-01-08 | |
| DE19712100692 DE2100692A1 (de) | 1970-01-09 | 1971-01-08 | Verfahren zum Herstellen einer epitaxisch gewachsenen Schicht eines GaAs tief 1 χ P tief χ Halbleitermaterial |
| US05/105,006 US4007074A (en) | 1970-01-09 | 1971-01-08 | Method of making an epitaxial growth layer of GaAs1-x Px compound semiconductor |
| NL7100218A NL7100218A (de) | 1970-01-09 | 1971-01-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP248770A JPS4918582B1 (de) | 1970-01-09 | 1970-01-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4918582B1 true JPS4918582B1 (de) | 1974-05-11 |
Family
ID=11530703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP248770A Pending JPS4918582B1 (de) | 1970-01-09 | 1970-01-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS4918582B1 (de) |
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1970
- 1970-01-09 JP JP248770A patent/JPS4918582B1/ja active Pending