JPS4914082A - - Google Patents
Info
- Publication number
- JPS4914082A JPS4914082A JP47047682A JP4768272A JPS4914082A JP S4914082 A JPS4914082 A JP S4914082A JP 47047682 A JP47047682 A JP 47047682A JP 4768272 A JP4768272 A JP 4768272A JP S4914082 A JPS4914082 A JP S4914082A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Welding Or Cutting Using Electron Beams (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47047682A JPS5135346B2 (es) | 1972-05-16 | 1972-05-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47047682A JPS5135346B2 (es) | 1972-05-16 | 1972-05-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4914082A true JPS4914082A (es) | 1974-02-07 |
| JPS5135346B2 JPS5135346B2 (es) | 1976-10-01 |
Family
ID=12782035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47047682A Expired JPS5135346B2 (es) | 1972-05-16 | 1972-05-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5135346B2 (es) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52156299A (en) * | 1976-06-21 | 1977-12-26 | Japan Atom Energy Res Inst | High temperature ion irradiating device |
| JPS61116746A (ja) * | 1984-09-19 | 1986-06-04 | アプライド マテリアルズ インコ−ポレ−テツド | 半導体ウエハをイオンインプランテ−シヨンする装置及び方法 |
| JP2002184713A (ja) * | 2000-12-12 | 2002-06-28 | Denso Corp | 炭化珪素半導体装置の製造方法 |
-
1972
- 1972-05-16 JP JP47047682A patent/JPS5135346B2/ja not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52156299A (en) * | 1976-06-21 | 1977-12-26 | Japan Atom Energy Res Inst | High temperature ion irradiating device |
| JPS61116746A (ja) * | 1984-09-19 | 1986-06-04 | アプライド マテリアルズ インコ−ポレ−テツド | 半導体ウエハをイオンインプランテ−シヨンする装置及び方法 |
| JPH06111752A (ja) * | 1984-09-19 | 1994-04-22 | Applied Materials Inc | 半導体ウェハをイオンインプランテーションする装置及び方法 |
| JP2002184713A (ja) * | 2000-12-12 | 2002-06-28 | Denso Corp | 炭化珪素半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5135346B2 (es) | 1976-10-01 |