JPS49134595A - - Google Patents

Info

Publication number
JPS49134595A
JPS49134595A JP4730573A JP4730573A JPS49134595A JP S49134595 A JPS49134595 A JP S49134595A JP 4730573 A JP4730573 A JP 4730573A JP 4730573 A JP4730573 A JP 4730573A JP S49134595 A JPS49134595 A JP S49134595A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4730573A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4730573A priority Critical patent/JPS49134595A/ja
Publication of JPS49134595A publication Critical patent/JPS49134595A/ja
Pending legal-status Critical Current

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Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP4730573A 1973-04-27 1973-04-27 Pending JPS49134595A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4730573A JPS49134595A (zh) 1973-04-27 1973-04-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4730573A JPS49134595A (zh) 1973-04-27 1973-04-27

Publications (1)

Publication Number Publication Date
JPS49134595A true JPS49134595A (zh) 1974-12-25

Family

ID=12771563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4730573A Pending JPS49134595A (zh) 1973-04-27 1973-04-27

Country Status (1)

Country Link
JP (1) JPS49134595A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020218483A1 (ja) * 2019-04-26 2020-10-29 学校法人関西学院 半導体基板の製造方法、その製造装置、及び、エピタキシャル成長方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020218483A1 (ja) * 2019-04-26 2020-10-29 学校法人関西学院 半導体基板の製造方法、その製造装置、及び、エピタキシャル成長方法

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