JPS49132984A - - Google Patents
Info
- Publication number
- JPS49132984A JPS49132984A JP47109385A JP10938572A JPS49132984A JP S49132984 A JPS49132984 A JP S49132984A JP 47109385 A JP47109385 A JP 47109385A JP 10938572 A JP10938572 A JP 10938572A JP S49132984 A JPS49132984 A JP S49132984A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00194366A US3829890A (en) | 1971-11-01 | 1971-11-01 | Ion implanted resistor and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS49132984A true JPS49132984A (ja) | 1974-12-20 |
Family
ID=22717312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47109385A Pending JPS49132984A (ja) | 1971-11-01 | 1972-10-31 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3829890A (ja) |
| JP (1) | JPS49132984A (ja) |
| DE (1) | DE2253683A1 (ja) |
| FR (1) | FR2165865B1 (ja) |
| GB (1) | GB1384935A (ja) |
| IT (1) | IT970101B (ja) |
| NL (1) | NL7214669A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51103780A (ja) * | 1975-03-10 | 1976-09-13 | Tokyo Shibaura Electric Co | Handotaisoshi |
| JPS5240986A (en) * | 1975-09-27 | 1977-03-30 | Toshiba Corp | Process for production of semiconductor element |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3947866A (en) * | 1973-06-25 | 1976-03-30 | Signetics Corporation | Ion implanted resistor having controlled temperature coefficient and method |
| DE2755418A1 (de) * | 1977-12-13 | 1979-06-21 | Bosch Gmbh Robert | Verfahren zur herstellung eines halbleiter-bauelements |
| IT1214621B (it) * | 1985-07-04 | 1990-01-18 | Ates Componenti Elettron | Procedimento per realizzare una resistenza di alto valore ohmico e minimo ingombro impiantata in un corpo di semiconduttore, e resistenza ottenuta. |
| US6709943B2 (en) * | 2002-08-26 | 2004-03-23 | Winbond Electronics Corporation | Method of forming semiconductor diffused resistors with optimized temperature dependence |
| KR100887884B1 (ko) * | 2007-10-01 | 2009-03-06 | 주식회사 동부하이텍 | 반도체 소자 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3548269A (en) * | 1968-12-03 | 1970-12-15 | Sprague Electric Co | Resistive layer semiconductive device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3683306A (en) * | 1968-11-19 | 1972-08-08 | Philips Corp | Temperature compensated semiconductor resistor containing neutral inactive impurities |
-
1971
- 1971-11-01 US US00194366A patent/US3829890A/en not_active Expired - Lifetime
-
1972
- 1972-10-20 GB GB4846772A patent/GB1384935A/en not_active Expired
- 1972-10-30 NL NL7214669A patent/NL7214669A/xx not_active Application Discontinuation
- 1972-10-31 IT IT31156/72A patent/IT970101B/it active
- 1972-10-31 JP JP47109385A patent/JPS49132984A/ja active Pending
- 1972-10-31 FR FR7238633A patent/FR2165865B1/fr not_active Expired
- 1972-11-02 DE DE2253683A patent/DE2253683A1/de active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3548269A (en) * | 1968-12-03 | 1970-12-15 | Sprague Electric Co | Resistive layer semiconductive device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51103780A (ja) * | 1975-03-10 | 1976-09-13 | Tokyo Shibaura Electric Co | Handotaisoshi |
| JPS5240986A (en) * | 1975-09-27 | 1977-03-30 | Toshiba Corp | Process for production of semiconductor element |
Also Published As
| Publication number | Publication date |
|---|---|
| IT970101B (it) | 1974-04-10 |
| US3829890A (en) | 1974-08-13 |
| NL7214669A (ja) | 1973-05-03 |
| DE2253683A1 (de) | 1973-05-24 |
| FR2165865A1 (ja) | 1973-08-10 |
| FR2165865B1 (ja) | 1977-05-20 |
| GB1384935A (en) | 1975-02-26 |