IT970101B - Resistore ad impianto di ioni - Google Patents

Resistore ad impianto di ioni

Info

Publication number
IT970101B
IT970101B IT31156/72A IT3115672A IT970101B IT 970101 B IT970101 B IT 970101B IT 31156/72 A IT31156/72 A IT 31156/72A IT 3115672 A IT3115672 A IT 3115672A IT 970101 B IT970101 B IT 970101B
Authority
IT
Italy
Prior art keywords
ion implant
implant resistor
resistor
ion
implant
Prior art date
Application number
IT31156/72A
Other languages
English (en)
Original Assignee
Corning Glass Works
Signetics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Glass Works, Signetics Corp filed Critical Corning Glass Works
Application granted granted Critical
Publication of IT970101B publication Critical patent/IT970101B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin-film techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT31156/72A 1971-11-01 1972-10-31 Resistore ad impianto di ioni IT970101B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00194366A US3829890A (en) 1971-11-01 1971-11-01 Ion implanted resistor and method

Publications (1)

Publication Number Publication Date
IT970101B true IT970101B (it) 1974-04-10

Family

ID=22717312

Family Applications (1)

Application Number Title Priority Date Filing Date
IT31156/72A IT970101B (it) 1971-11-01 1972-10-31 Resistore ad impianto di ioni

Country Status (7)

Country Link
US (1) US3829890A (it)
JP (1) JPS49132984A (it)
DE (1) DE2253683A1 (it)
FR (1) FR2165865B1 (it)
GB (1) GB1384935A (it)
IT (1) IT970101B (it)
NL (1) NL7214669A (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3947866A (en) * 1973-06-25 1976-03-30 Signetics Corporation Ion implanted resistor having controlled temperature coefficient and method
JPS51103780A (ja) * 1975-03-10 1976-09-13 Tokyo Shibaura Electric Co Handotaisoshi
JPS5240986A (en) * 1975-09-27 1977-03-30 Toshiba Corp Process for production of semiconductor element
DE2755418A1 (de) * 1977-12-13 1979-06-21 Bosch Gmbh Robert Verfahren zur herstellung eines halbleiter-bauelements
IT1214621B (it) * 1985-07-04 1990-01-18 Ates Componenti Elettron Procedimento per realizzare una resistenza di alto valore ohmico e minimo ingombro impiantata in un corpo di semiconduttore, e resistenza ottenuta.
US6709943B2 (en) * 2002-08-26 2004-03-23 Winbond Electronics Corporation Method of forming semiconductor diffused resistors with optimized temperature dependence
KR100887884B1 (ko) * 2007-10-01 2009-03-06 주식회사 동부하이텍 반도체 소자

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3683306A (en) * 1968-11-19 1972-08-08 Philips Corp Temperature compensated semiconductor resistor containing neutral inactive impurities
US3548269A (en) * 1968-12-03 1970-12-15 Sprague Electric Co Resistive layer semiconductive device

Also Published As

Publication number Publication date
FR2165865A1 (it) 1973-08-10
DE2253683A1 (de) 1973-05-24
FR2165865B1 (it) 1977-05-20
GB1384935A (en) 1975-02-26
JPS49132984A (it) 1974-12-20
NL7214669A (it) 1973-05-03
US3829890A (en) 1974-08-13

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