JPS4912795B1 - - Google Patents
Info
- Publication number
- JPS4912795B1 JPS4912795B1 JP43089227A JP8922768A JPS4912795B1 JP S4912795 B1 JPS4912795 B1 JP S4912795B1 JP 43089227 A JP43089227 A JP 43089227A JP 8922768 A JP8922768 A JP 8922768A JP S4912795 B1 JPS4912795 B1 JP S4912795B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/135—Removal of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP43089227A JPS4912795B1 (ja) | 1968-12-05 | 1968-12-05 | |
US881452A US3871007A (en) | 1968-12-05 | 1969-12-02 | Semiconductor integrated circuit |
GB1288940D GB1288940A (ja) | 1968-12-05 | 1969-12-03 | |
NL6918283.A NL164702C (nl) | 1968-12-05 | 1969-12-04 | Geintegreerde halfgeleiderschakeling, voorzien van een door een reactie in de dampfase gevormde halfgeleidende laag, die bestaat uit monokristallijne gebieden en uit een polykristallijn gebied dat de monokristallijne gebieden van elkaar scheidt. |
FR6942177A FR2030781A6 (fr) | 1967-12-05 | 1969-12-05 | Procédé de fabrication de circuits semi-conducteurs intégrés et circuits ainsi obtenus |
DE19691961225 DE1961225A1 (de) | 1968-12-05 | 1969-12-05 | Integrierte Halbleiterschaltung und Verfahren zu ihrer Herstellung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP43089227A JPS4912795B1 (ja) | 1968-12-05 | 1968-12-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4912795B1 true JPS4912795B1 (ja) | 1974-03-27 |
Family
ID=13964838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP43089227A Pending JPS4912795B1 (ja) | 1967-12-05 | 1968-12-05 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3871007A (ja) |
JP (1) | JPS4912795B1 (ja) |
DE (1) | DE1961225A1 (ja) |
GB (1) | GB1288940A (ja) |
NL (1) | NL164702C (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2151346C3 (de) * | 1971-10-15 | 1981-04-09 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zum Herstellung einer aus Einkristallschichtteilen und Polykristallschichtteilen bestehenden Halbleiterschicht auf einem Einkristallkörper |
US4053335A (en) * | 1976-04-02 | 1977-10-11 | International Business Machines Corporation | Method of gettering using backside polycrystalline silicon |
JPS5951743B2 (ja) * | 1978-11-08 | 1984-12-15 | 株式会社日立製作所 | 半導体集積装置 |
US4242697A (en) * | 1979-03-14 | 1980-12-30 | Bell Telephone Laboratories, Incorporated | Dielectrically isolated high voltage semiconductor devices |
US4283235A (en) * | 1979-07-27 | 1981-08-11 | Massachusetts Institute Of Technology | Dielectric isolation using shallow oxide and polycrystalline silicon utilizing selective oxidation |
US4231819A (en) * | 1979-07-27 | 1980-11-04 | Massachusetts Institute Of Technology | Dielectric isolation method using shallow oxide and polycrystalline silicon utilizing a preliminary etching step |
GB2104722B (en) * | 1981-06-25 | 1985-04-24 | Suwa Seikosha Kk | Mos semiconductor device and method of manufacturing the same |
EP0109996B1 (fr) * | 1982-11-26 | 1987-06-03 | International Business Machines Corporation | Structure de résistance autopolarisée et application à la réalisation de circuits d'interface |
US4879585A (en) * | 1984-03-31 | 1989-11-07 | Kabushiki Kaisha Toshiba | Semiconductor device |
US4860081A (en) * | 1984-06-28 | 1989-08-22 | Gte Laboratories Incorporated | Semiconductor integrated circuit structure with insulative partitions |
US4649630A (en) * | 1985-04-01 | 1987-03-17 | Motorola, Inc. | Process for dielectrically isolated semiconductor structure |
JPS6281745A (ja) * | 1985-10-05 | 1987-04-15 | Fujitsu Ltd | ウエハ−規模のlsi半導体装置とその製造方法 |
JP2567472B2 (ja) * | 1989-05-24 | 1996-12-25 | 日産自動車株式会社 | 半導体装置 |
US5212109A (en) * | 1989-05-24 | 1993-05-18 | Nissan Motor Co., Ltd. | Method for forming PN junction isolation regions by forming buried regions of doped polycrystalline or amorphous semiconductor |
JP2890601B2 (ja) * | 1990-02-08 | 1999-05-17 | 株式会社デンソー | 半導体センサ |
US7112867B2 (en) * | 2003-12-05 | 2006-09-26 | Intel Corporation | Resistive isolation between a body and a body contact |
US20070042563A1 (en) * | 2005-08-19 | 2007-02-22 | Honeywell International Inc. | Single crystal based through the wafer connections technical field |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3320485A (en) * | 1964-03-30 | 1967-05-16 | Trw Inc | Dielectric isolation for monolithic circuit |
US3335038A (en) * | 1964-03-30 | 1967-08-08 | Ibm | Methods of producing single crystals on polycrystalline substrates and devices using same |
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1968
- 1968-12-05 JP JP43089227A patent/JPS4912795B1/ja active Pending
-
1969
- 1969-12-02 US US881452A patent/US3871007A/en not_active Expired - Lifetime
- 1969-12-03 GB GB1288940D patent/GB1288940A/en not_active Expired
- 1969-12-04 NL NL6918283.A patent/NL164702C/xx not_active IP Right Cessation
- 1969-12-05 DE DE19691961225 patent/DE1961225A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
GB1288940A (ja) | 1972-09-13 |
NL164702C (nl) | 1981-01-15 |
NL6918283A (ja) | 1970-06-09 |
US3871007A (en) | 1975-03-11 |
DE1961225A1 (de) | 1970-08-27 |
NL164702B (nl) | 1980-08-15 |