JPS49116960A - - Google Patents
Info
- Publication number
- JPS49116960A JPS49116960A JP2712773A JP2712773A JPS49116960A JP S49116960 A JPS49116960 A JP S49116960A JP 2712773 A JP2712773 A JP 2712773A JP 2712773 A JP2712773 A JP 2712773A JP S49116960 A JPS49116960 A JP S49116960A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2712773A JPS5329428B2 (ja) | 1973-03-09 | 1973-03-09 | |
US05/594,950 US4033291A (en) | 1973-03-09 | 1975-07-10 | Apparatus for liquid-phase epitaxial growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2712773A JPS5329428B2 (ja) | 1973-03-09 | 1973-03-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS49116960A true JPS49116960A (ja) | 1974-11-08 |
JPS5329428B2 JPS5329428B2 (ja) | 1978-08-21 |
Family
ID=12212380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2712773A Expired JPS5329428B2 (ja) | 1973-03-09 | 1973-03-09 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5329428B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52137976A (en) * | 1976-05-14 | 1977-11-17 | Toshiba Corp | Liquid phase vapor growth apparatus for compound semiconductors |
JPS52142479A (en) * | 1976-05-21 | 1977-11-28 | Stanley Electric Co Ltd | Method of making semiconductor |
JPS52142480A (en) * | 1976-05-21 | 1977-11-28 | Stanley Electric Co Ltd | Liquiddgrowth method |
JPS5488069A (en) * | 1977-12-26 | 1979-07-12 | Fujitsu Ltd | Liquid-phase epitaxial growth unit |
JPS5821830A (ja) * | 1981-07-31 | 1983-02-08 | Fujitsu Ltd | 液相エピタキシヤル成長装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55177482U (ja) * | 1979-06-05 | 1980-12-19 |
-
1973
- 1973-03-09 JP JP2712773A patent/JPS5329428B2/ja not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52137976A (en) * | 1976-05-14 | 1977-11-17 | Toshiba Corp | Liquid phase vapor growth apparatus for compound semiconductors |
JPS52142479A (en) * | 1976-05-21 | 1977-11-28 | Stanley Electric Co Ltd | Method of making semiconductor |
JPS52142480A (en) * | 1976-05-21 | 1977-11-28 | Stanley Electric Co Ltd | Liquiddgrowth method |
JPS5513576B2 (ja) * | 1976-05-21 | 1980-04-10 | ||
JPS5513577B2 (ja) * | 1976-05-21 | 1980-04-10 | ||
JPS5488069A (en) * | 1977-12-26 | 1979-07-12 | Fujitsu Ltd | Liquid-phase epitaxial growth unit |
JPS5821830A (ja) * | 1981-07-31 | 1983-02-08 | Fujitsu Ltd | 液相エピタキシヤル成長装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS5329428B2 (ja) | 1978-08-21 |