JPS49115275A - - Google Patents

Info

Publication number
JPS49115275A
JPS49115275A JP2469173A JP2469173A JPS49115275A JP S49115275 A JPS49115275 A JP S49115275A JP 2469173 A JP2469173 A JP 2469173A JP 2469173 A JP2469173 A JP 2469173A JP S49115275 A JPS49115275 A JP S49115275A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2469173A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2469173A priority Critical patent/JPS49115275A/ja
Publication of JPS49115275A publication Critical patent/JPS49115275A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
JP2469173A 1973-02-28 1973-02-28 Pending JPS49115275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2469173A JPS49115275A (en) 1973-02-28 1973-02-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2469173A JPS49115275A (en) 1973-02-28 1973-02-28

Publications (1)

Publication Number Publication Date
JPS49115275A true JPS49115275A (en) 1974-11-02

Family

ID=12145180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2469173A Pending JPS49115275A (en) 1973-02-28 1973-02-28

Country Status (1)

Country Link
JP (1) JPS49115275A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6577005B1 (en) * 1997-11-27 2003-06-10 Kabushiki Kaishia Toshiba Fine protuberance structure and method of production thereof
JP2011029608A (en) * 2009-06-23 2011-02-10 Shindengen Electric Mfg Co Ltd Semiconductor device, and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6577005B1 (en) * 1997-11-27 2003-06-10 Kabushiki Kaishia Toshiba Fine protuberance structure and method of production thereof
JP2011029608A (en) * 2009-06-23 2011-02-10 Shindengen Electric Mfg Co Ltd Semiconductor device, and method of manufacturing the same

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