JPS4896461A - - Google Patents
Info
- Publication number
- JPS4896461A JPS4896461A JP2993172A JP2993172A JPS4896461A JP S4896461 A JPS4896461 A JP S4896461A JP 2993172 A JP2993172 A JP 2993172A JP 2993172 A JP2993172 A JP 2993172A JP S4896461 A JPS4896461 A JP S4896461A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/066—Injection or centrifugal force system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2993172A JPS4896461A (nl) | 1972-03-24 | 1972-03-24 | |
| DE19732314109 DE2314109A1 (de) | 1972-03-24 | 1973-03-21 | Verfahren und vorrichtung zur herstellung von halbleiter-einkristallen durch zuechtung aus fluessiger phase |
| GB1414873A GB1423594A (en) | 1972-03-24 | 1973-03-23 | Manufacture of semiconductor single crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2993172A JPS4896461A (nl) | 1972-03-24 | 1972-03-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4896461A true JPS4896461A (nl) | 1973-12-10 |
Family
ID=12289720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2993172A Pending JPS4896461A (nl) | 1972-03-24 | 1972-03-24 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS4896461A (nl) |
| DE (1) | DE2314109A1 (nl) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2445146C3 (de) * | 1974-09-20 | 1979-03-08 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V., 3400 Goettingen | Verfahren und Vorrichtung zur Ausbildung epitaktischer Schichten |
| IL49750A0 (en) * | 1975-07-08 | 1976-08-31 | Ict Inc | Method and apparatus for centrifugally forming thin singlecrystal layers |
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1972
- 1972-03-24 JP JP2993172A patent/JPS4896461A/ja active Pending
-
1973
- 1973-03-21 DE DE19732314109 patent/DE2314109A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2314109A1 (de) | 1973-10-11 |