JPS4880275A - - Google Patents

Info

Publication number
JPS4880275A
JPS4880275A JP47010644A JP1064472A JPS4880275A JP S4880275 A JPS4880275 A JP S4880275A JP 47010644 A JP47010644 A JP 47010644A JP 1064472 A JP1064472 A JP 1064472A JP S4880275 A JPS4880275 A JP S4880275A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47010644A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47010644A priority Critical patent/JPS4880275A/ja
Priority to US00324887A priority patent/US3809584A/en
Publication of JPS4880275A publication Critical patent/JPS4880275A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP47010644A 1972-01-28 1972-01-28 Pending JPS4880275A (sv)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP47010644A JPS4880275A (sv) 1972-01-28 1972-01-28
US00324887A US3809584A (en) 1972-01-28 1973-01-18 Method for continuously growing epitaxial layers of semiconductors from liquid phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47010644A JPS4880275A (sv) 1972-01-28 1972-01-28

Publications (1)

Publication Number Publication Date
JPS4880275A true JPS4880275A (sv) 1973-10-27

Family

ID=11755910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47010644A Pending JPS4880275A (sv) 1972-01-28 1972-01-28

Country Status (2)

Country Link
US (1) US3809584A (sv)
JP (1) JPS4880275A (sv)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5074270U (sv) * 1973-11-09 1975-06-28
JPS5132488A (ja) * 1974-09-14 1976-03-19 Tokyo Shibaura Electric Co Ekisoseichohoho
JPS61251022A (ja) * 1985-04-27 1986-11-08 Junichi Nishizawa 化合物半導体の液相エピタキシヤル成長法及び成長装置

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318151B2 (sv) * 1971-12-14 1978-06-13
NL7306004A (sv) * 1973-05-01 1974-11-05
US3884788A (en) * 1973-08-30 1975-05-20 Honeywell Inc Substrate preparation for liquid phase epitaxy of mercury cadmium telluride
JPS51111476A (en) * 1975-03-26 1976-10-01 Sumitomo Electric Ind Ltd Method of liquid phase epitaxial crystal growth
US4026240A (en) * 1975-11-17 1977-05-31 Hewlett-Packard Company Liquid phase epitaxial reactor apparatus
US4357620A (en) * 1980-11-18 1982-11-02 The United States Of America As Represented By The Secretary Of The Army Liquid-phase epitaxial growth of cdTe on HgCdTe
US4376663A (en) * 1980-11-18 1983-03-15 The United States Of America As Represented By The Secretary Of The Army Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate
US4516296A (en) * 1983-10-05 1985-05-14 Zsi, Inc. Tubing clamp and method of making the same
US8193078B2 (en) 2008-10-28 2012-06-05 Athenaeum, Llc Method of integrating epitaxial film onto assembly substrate
US20100102419A1 (en) * 2008-10-28 2010-04-29 Eric Ting-Shan Pan Epitaxy-Level Packaging (ELP) System
US7905197B2 (en) * 2008-10-28 2011-03-15 Athenaeum, Llc Apparatus for making epitaxial film
ITRM20090074A1 (it) * 2009-02-19 2010-08-20 Bove Rafael Dalenz Forno con gradiente termico controllato per lavorazione di materiali mediante trattamenti termici cristallizzazione silico od altri mediante controllo del posizionamento del crogiolo all'interno del forno

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136448U (sv) * 1974-09-11 1976-03-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136448U (sv) * 1974-09-11 1976-03-18

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5074270U (sv) * 1973-11-09 1975-06-28
JPS5420944Y2 (sv) * 1973-11-09 1979-07-26
JPS5132488A (ja) * 1974-09-14 1976-03-19 Tokyo Shibaura Electric Co Ekisoseichohoho
JPS61251022A (ja) * 1985-04-27 1986-11-08 Junichi Nishizawa 化合物半導体の液相エピタキシヤル成長法及び成長装置
JPH0564849B2 (sv) * 1985-04-27 1993-09-16 Junichi Nishizawa

Also Published As

Publication number Publication date
US3809584A (en) 1974-05-07

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