JPS4879979A - - Google Patents
Info
- Publication number
- JPS4879979A JPS4879979A JP48004376A JP437673A JPS4879979A JP S4879979 A JPS4879979 A JP S4879979A JP 48004376 A JP48004376 A JP 48004376A JP 437673 A JP437673 A JP 437673A JP S4879979 A JPS4879979 A JP S4879979A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5893—Mixing of deposited material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
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- H10P14/46—
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- H10P95/00—
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21459072A | 1972-01-03 | 1972-01-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4879979A true JPS4879979A (OSRAM) | 1973-10-26 |
| JPS5348075B2 JPS5348075B2 (OSRAM) | 1978-12-26 |
Family
ID=22799670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP734376A Expired JPS5348075B2 (OSRAM) | 1972-01-03 | 1972-12-28 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5348075B2 (OSRAM) |
| CA (1) | CA965189A (OSRAM) |
| FR (1) | FR2167603B1 (OSRAM) |
| GB (1) | GB1410701A (OSRAM) |
| IT (1) | IT977986B (OSRAM) |
| NL (1) | NL160987C (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63257269A (ja) * | 1987-04-14 | 1988-10-25 | Fujitsu Ltd | 半導体装置のコンタクト形成方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60234621A (ja) * | 1984-05-07 | 1985-11-21 | 照井 ヨシヱ | 水切り受台 |
| IT1185964B (it) * | 1985-10-01 | 1987-11-18 | Sgs Microelettronica Spa | Procedimento e relativa apparecchiatura per realizzare contatti metallo-semiconduttore di tipo ohmico |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE341222B (OSRAM) * | 1967-11-15 | 1971-12-20 | Western Electric Co | |
| US3658489A (en) * | 1968-08-09 | 1972-04-25 | Nippon Electric Co | Laminated electrode for a semiconductor device |
-
1972
- 1972-12-21 CA CA159,669A patent/CA965189A/en not_active Expired
- 1972-12-28 JP JP734376A patent/JPS5348075B2/ja not_active Expired
- 1972-12-29 NL NL7217827.A patent/NL160987C/xx not_active IP Right Cessation
-
1973
- 1973-01-02 GB GB17873A patent/GB1410701A/en not_active Expired
- 1973-01-02 FR FR7300078A patent/FR2167603B1/fr not_active Expired
- 1973-01-02 IT IT19001/73A patent/IT977986B/it active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63257269A (ja) * | 1987-04-14 | 1988-10-25 | Fujitsu Ltd | 半導体装置のコンタクト形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| IT977986B (it) | 1974-09-20 |
| NL7217827A (OSRAM) | 1973-07-05 |
| DE2264322B2 (de) | 1977-02-24 |
| NL160987C (nl) | 1979-12-17 |
| CA965189A (en) | 1975-03-25 |
| JPS5348075B2 (OSRAM) | 1978-12-26 |
| GB1410701A (en) | 1975-10-22 |
| DE2264322A1 (de) | 1973-07-19 |
| FR2167603B1 (OSRAM) | 1977-02-04 |
| FR2167603A1 (OSRAM) | 1973-08-24 |
| NL160987B (nl) | 1979-07-16 |