JPS4873090A - - Google Patents

Info

Publication number
JPS4873090A
JPS4873090A JP10538871A JP10538871A JPS4873090A JP S4873090 A JPS4873090 A JP S4873090A JP 10538871 A JP10538871 A JP 10538871A JP 10538871 A JP10538871 A JP 10538871A JP S4873090 A JPS4873090 A JP S4873090A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10538871A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10538871A priority Critical patent/JPS4873090A/ja
Publication of JPS4873090A publication Critical patent/JPS4873090A/ja
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
JP10538871A 1971-12-27 1971-12-27 Pending JPS4873090A (nl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10538871A JPS4873090A (nl) 1971-12-27 1971-12-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10538871A JPS4873090A (nl) 1971-12-27 1971-12-27

Publications (1)

Publication Number Publication Date
JPS4873090A true JPS4873090A (nl) 1973-10-02

Family

ID=14406255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10538871A Pending JPS4873090A (nl) 1971-12-27 1971-12-27

Country Status (1)

Country Link
JP (1) JPS4873090A (nl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134492A (ja) * 1982-02-04 1983-08-10 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 少くとも2つの光ビ−ムを発生する半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134492A (ja) * 1982-02-04 1983-08-10 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 少くとも2つの光ビ−ムを発生する半導体装置

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