JPS4873088A - - Google Patents

Info

Publication number
JPS4873088A
JPS4873088A JP104372A JP104372A JPS4873088A JP S4873088 A JPS4873088 A JP S4873088A JP 104372 A JP104372 A JP 104372A JP 104372 A JP104372 A JP 104372A JP S4873088 A JPS4873088 A JP S4873088A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP104372A
Other versions
JPS5415663B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP104372A priority Critical patent/JPS5415663B2/ja
Publication of JPS4873088A publication Critical patent/JPS4873088A/ja
Publication of JPS5415663B2 publication Critical patent/JPS5415663B2/ja
Expired legal-status Critical Current

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Landscapes

  • Bipolar Transistors (AREA)
JP104372A 1971-12-29 1971-12-29 Expired JPS5415663B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP104372A JPS5415663B2 (ja) 1971-12-29 1971-12-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP104372A JPS5415663B2 (ja) 1971-12-29 1971-12-29

Publications (2)

Publication Number Publication Date
JPS4873088A true JPS4873088A (ja) 1973-10-02
JPS5415663B2 JPS5415663B2 (ja) 1979-06-16

Family

ID=11490518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP104372A Expired JPS5415663B2 (ja) 1971-12-29 1971-12-29

Country Status (1)

Country Link
JP (1) JPS5415663B2 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4965182A (ja) * 1972-07-05 1974-06-24
JPS513873A (en) * 1974-06-29 1976-01-13 Tokyo Shibaura Electric Co Handotaisochino seizohoho
JPS5394869A (en) * 1977-01-31 1978-08-19 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS54102965A (en) * 1978-01-31 1979-08-13 Nec Home Electronics Ltd Impurity diffusion method
JPS54102966A (en) * 1978-01-31 1979-08-13 Nec Home Electronics Ltd Impurity diffusion method
JPS5635427A (en) * 1973-10-31 1981-04-08 Ibm Method of manufacturing semiconductor device
JPS5712519A (en) * 1980-06-26 1982-01-22 Mitsubishi Electric Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3450961A (en) * 1966-05-26 1969-06-17 Westinghouse Electric Corp Semiconductor devices with a region having portions of differing depth and concentration

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3450961A (en) * 1966-05-26 1969-06-17 Westinghouse Electric Corp Semiconductor devices with a region having portions of differing depth and concentration

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4965182A (ja) * 1972-07-05 1974-06-24
JPS5635427A (en) * 1973-10-31 1981-04-08 Ibm Method of manufacturing semiconductor device
JPS5745059B2 (ja) * 1973-10-31 1982-09-25
JPS513873A (en) * 1974-06-29 1976-01-13 Tokyo Shibaura Electric Co Handotaisochino seizohoho
JPS5394869A (en) * 1977-01-31 1978-08-19 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS54102965A (en) * 1978-01-31 1979-08-13 Nec Home Electronics Ltd Impurity diffusion method
JPS54102966A (en) * 1978-01-31 1979-08-13 Nec Home Electronics Ltd Impurity diffusion method
JPS5712519A (en) * 1980-06-26 1982-01-22 Mitsubishi Electric Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5415663B2 (ja) 1979-06-16

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