JPS4860881A - - Google Patents
Info
- Publication number
- JPS4860881A JPS4860881A JP46096086A JP9608671A JPS4860881A JP S4860881 A JPS4860881 A JP S4860881A JP 46096086 A JP46096086 A JP 46096086A JP 9608671 A JP9608671 A JP 9608671A JP S4860881 A JPS4860881 A JP S4860881A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46096086A JPS5141515B2 (enExample) | 1971-11-29 | 1971-11-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46096086A JPS5141515B2 (enExample) | 1971-11-29 | 1971-11-29 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51002657A Division JPS597230B2 (ja) | 1976-01-12 | 1976-01-12 | 絶縁ゲイト型電界効界半導体装置およびその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4860881A true JPS4860881A (enExample) | 1973-08-25 |
| JPS5141515B2 JPS5141515B2 (enExample) | 1976-11-10 |
Family
ID=14155574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP46096086A Expired JPS5141515B2 (enExample) | 1971-11-29 | 1971-11-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5141515B2 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4944677A (enExample) * | 1972-05-31 | 1974-04-26 | ||
| JPH0355880A (ja) * | 1989-07-25 | 1991-03-11 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
| US5668028A (en) * | 1993-11-30 | 1997-09-16 | Sgs-Thomson Microelectronics, Inc. | Method of depositing thin nitride layer on gate oxide dielectric |
-
1971
- 1971-11-29 JP JP46096086A patent/JPS5141515B2/ja not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4944677A (enExample) * | 1972-05-31 | 1974-04-26 | ||
| JPH0355880A (ja) * | 1989-07-25 | 1991-03-11 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
| US5668028A (en) * | 1993-11-30 | 1997-09-16 | Sgs-Thomson Microelectronics, Inc. | Method of depositing thin nitride layer on gate oxide dielectric |
| US5710453A (en) * | 1993-11-30 | 1998-01-20 | Sgs-Thomson Microelectronics, Inc. | Transistor structure and method for making same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5141515B2 (enExample) | 1976-11-10 |