JPS4856598A - - Google Patents
Info
- Publication number
- JPS4856598A JPS4856598A JP9316971A JP9316971A JPS4856598A JP S4856598 A JPS4856598 A JP S4856598A JP 9316971 A JP9316971 A JP 9316971A JP 9316971 A JP9316971 A JP 9316971A JP S4856598 A JPS4856598 A JP S4856598A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9316971A JPS4856598A (cs) | 1971-11-22 | 1971-11-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9316971A JPS4856598A (cs) | 1971-11-22 | 1971-11-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4856598A true JPS4856598A (cs) | 1973-08-08 |
Family
ID=14075052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9316971A Pending JPS4856598A (cs) | 1971-11-22 | 1971-11-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS4856598A (cs) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58101429A (ja) * | 1981-12-12 | 1983-06-16 | Semiconductor Res Found | ドライエツチング方法 |
| JPH01239846A (ja) * | 1988-03-19 | 1989-09-25 | Fujitsu Ltd | 反応性ガスエッチング方法 |
| US6599843B2 (en) * | 2001-05-29 | 2003-07-29 | Infineon Technologies Ag | In-situ mask technique for producing III-V semiconductor components |
-
1971
- 1971-11-22 JP JP9316971A patent/JPS4856598A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58101429A (ja) * | 1981-12-12 | 1983-06-16 | Semiconductor Res Found | ドライエツチング方法 |
| JPH01239846A (ja) * | 1988-03-19 | 1989-09-25 | Fujitsu Ltd | 反応性ガスエッチング方法 |
| US6599843B2 (en) * | 2001-05-29 | 2003-07-29 | Infineon Technologies Ag | In-situ mask technique for producing III-V semiconductor components |