JPS4846276A - - Google Patents

Info

Publication number
JPS4846276A
JPS4846276A JP46080389A JP8038971A JPS4846276A JP S4846276 A JPS4846276 A JP S4846276A JP 46080389 A JP46080389 A JP 46080389A JP 8038971 A JP8038971 A JP 8038971A JP S4846276 A JPS4846276 A JP S4846276A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP46080389A
Other languages
Japanese (ja)
Other versions
JPS5345675B2 (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8038971A priority Critical patent/JPS5345675B2/ja
Publication of JPS4846276A publication Critical patent/JPS4846276A/ja
Publication of JPS5345675B2 publication Critical patent/JPS5345675B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76227—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials the dielectric materials being obtained by full chemical transformation of non-dielectric materials, such as polycristalline silicon, metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP8038971A 1971-10-12 1971-10-12 Expired JPS5345675B2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8038971A JPS5345675B2 (fr) 1971-10-12 1971-10-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8038971A JPS5345675B2 (fr) 1971-10-12 1971-10-12

Publications (2)

Publication Number Publication Date
JPS4846276A true JPS4846276A (fr) 1973-07-02
JPS5345675B2 JPS5345675B2 (fr) 1978-12-08

Family

ID=13716919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8038971A Expired JPS5345675B2 (fr) 1971-10-12 1971-10-12

Country Status (1)

Country Link
JP (1) JPS5345675B2 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5047580A (fr) * 1973-08-28 1975-04-28
JPS50137482A (fr) * 1974-04-18 1975-10-31
JPS51135376A (en) * 1975-05-19 1976-11-24 Matsushita Electric Ind Co Ltd Junction type field effect transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935445A (ja) * 1982-08-24 1984-02-27 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5047580A (fr) * 1973-08-28 1975-04-28
JPS50137482A (fr) * 1974-04-18 1975-10-31
JPS5330591B2 (fr) * 1974-04-18 1978-08-28
JPS51135376A (en) * 1975-05-19 1976-11-24 Matsushita Electric Ind Co Ltd Junction type field effect transistor

Also Published As

Publication number Publication date
JPS5345675B2 (fr) 1978-12-08

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