JPS4844585B1 - - Google Patents

Info

Publication number
JPS4844585B1
JPS4844585B1 JP2842269A JP2842269A JPS4844585B1 JP S4844585 B1 JPS4844585 B1 JP S4844585B1 JP 2842269 A JP2842269 A JP 2842269A JP 2842269 A JP2842269 A JP 2842269A JP S4844585 B1 JPS4844585 B1 JP S4844585B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2842269A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2842269A priority Critical patent/JPS4844585B1/ja
Priority to US24078A priority patent/US3646527A/en
Publication of JPS4844585B1 publication Critical patent/JPS4844585B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
JP2842269A 1969-04-12 1969-04-12 Pending JPS4844585B1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2842269A JPS4844585B1 (ja) 1969-04-12 1969-04-12
US24078A US3646527A (en) 1969-04-12 1970-03-31 Electronic memory circuit employing semiconductor memory elements and a method for writing to the memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2842269A JPS4844585B1 (ja) 1969-04-12 1969-04-12

Publications (1)

Publication Number Publication Date
JPS4844585B1 true JPS4844585B1 (ja) 1973-12-25

Family

ID=12248205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2842269A Pending JPS4844585B1 (ja) 1969-04-12 1969-04-12

Country Status (2)

Country Link
US (1) US3646527A (ja)
JP (1) JPS4844585B1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3720925A (en) * 1970-10-19 1973-03-13 Rca Corp Memory system using variable threshold transistors
US3832700A (en) * 1973-04-24 1974-08-27 Westinghouse Electric Corp Ferroelectric memory device
US3925804A (en) * 1974-01-29 1975-12-09 Westinghouse Electric Corp Structure of and the method of processing a semiconductor matrix or MNOS memory elements
US3987474A (en) * 1975-01-23 1976-10-19 Massachusetts Institute Of Technology Non-volatile charge storage elements and an information storage apparatus employing such elements
US3992701A (en) * 1975-04-10 1976-11-16 International Business Machines Corporation Non-volatile memory cell and array using substrate current
US4075653A (en) * 1976-11-19 1978-02-21 International Business Machines Corporation Method for injecting charge in field effect devices
NL191683C (nl) * 1977-02-21 1996-02-05 Zaidan Hojin Handotai Kenkyu Halfgeleidergeheugenschakeling.
US4835587A (en) * 1984-09-19 1989-05-30 Fuji Electric Co., Ltd. Semiconductor device for detecting radiation
KR940006708B1 (ko) * 1989-01-26 1994-07-25 세이꼬 엡슨 가부시끼가이샤 반도체 장치의 제조 방법
AU638812B2 (en) * 1990-04-16 1993-07-08 Digital Equipment Corporation A method of operating a semiconductor device
JP3110262B2 (ja) * 1993-11-15 2000-11-20 松下電器産業株式会社 半導体装置及び半導体装置のオペレーティング方法
US6573167B2 (en) * 2000-08-10 2003-06-03 Texas Instruments Incorporated Using a carbon film as an etch hardmask for hard-to-etch materials
JP3736740B2 (ja) * 2000-12-12 2006-01-18 シャープ株式会社 絶縁膜容量評価装置および絶縁膜容量評価方法
US7227239B2 (en) * 2004-09-23 2007-06-05 International Business Machines Corporation Resettable fuse device and method of fabricating the same
FR2929013B1 (fr) * 2008-03-21 2010-05-21 Commissariat Energie Atomique Structure de test d'une capacite mos et procede de mesure d'une courbe de capacite en fonction de la tension associe

Also Published As

Publication number Publication date
US3646527A (en) 1972-02-29

Similar Documents

Publication Publication Date Title
AU2270770A (ja)
AU465452B2 (ja)
AU429630B2 (ja)
AU450150B2 (ja)
AU2355770A (ja)
AU442375B2 (ja)
AU470301B1 (ja)
AU427401B2 (ja)
AU442535B2 (ja)
AU417208B2 (ja)
AU442554B2 (ja)
AU438128B2 (ja)
AU470661B1 (ja)
AU410358B2 (ja)
AU414607B2 (ja)
AU428131B2 (ja)
AU442285B2 (ja)
AU442322B2 (ja)
AU442357B2 (ja)
AU428129B2 (ja)
AU442380B2 (ja)
AU428074B2 (ja)
AU442538B2 (ja)
AU425297B2 (ja)
AU5228269A (ja)