JPS4840814A - - Google Patents
Info
- Publication number
- JPS4840814A JPS4840814A JP7477871A JP7477871A JPS4840814A JP S4840814 A JPS4840814 A JP S4840814A JP 7477871 A JP7477871 A JP 7477871A JP 7477871 A JP7477871 A JP 7477871A JP S4840814 A JPS4840814 A JP S4840814A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7477871A JPS4840814A (fr) | 1971-09-25 | 1971-09-25 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7477871A JPS4840814A (fr) | 1971-09-25 | 1971-09-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4840814A true JPS4840814A (fr) | 1973-06-15 |
Family
ID=13557074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7477871A Pending JPS4840814A (fr) | 1971-09-25 | 1971-09-25 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS4840814A (fr) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5181577A (ja) * | 1975-01-16 | 1976-07-16 | Hitachi Ltd | Kotaiatsuzenengeetogatadenkaikokatoranjisuta |
JPS5185381A (fr) * | 1975-01-24 | 1976-07-26 | Hitachi Ltd | |
JPS5585073A (en) * | 1979-12-17 | 1980-06-26 | Hitachi Ltd | Manufacture of insulation gate type electric field effect transistor |
JPS55146944A (en) * | 1979-02-15 | 1980-11-15 | Texas Instruments Inc | Method of fabricating monolithic integrated microelectronic semiconductor circuit |
JPS582074A (ja) * | 1981-06-17 | 1983-01-07 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | 絶縁ゲ−ト電界効果トランジスタの製造方法 |
US4376286A (en) * | 1978-10-13 | 1983-03-08 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US4705759A (en) * | 1978-10-13 | 1987-11-10 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US4959699A (en) * | 1978-10-13 | 1990-09-25 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US4974059A (en) * | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
US5223732A (en) * | 1991-05-28 | 1993-06-29 | Motorola, Inc. | Insulated gate semiconductor device with reduced based-to-source electrode short |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
-
1971
- 1971-09-25 JP JP7477871A patent/JPS4840814A/ja active Pending
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5181577A (ja) * | 1975-01-16 | 1976-07-16 | Hitachi Ltd | Kotaiatsuzenengeetogatadenkaikokatoranjisuta |
JPS6037624B2 (ja) * | 1975-01-16 | 1985-08-27 | 株式会社日立製作所 | 高耐圧絶縁ゲ−ト型電界効果トランジスタ |
JPS5185381A (fr) * | 1975-01-24 | 1976-07-26 | Hitachi Ltd | |
US4959699A (en) * | 1978-10-13 | 1990-09-25 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US4376286A (en) * | 1978-10-13 | 1983-03-08 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US4705759A (en) * | 1978-10-13 | 1987-11-10 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5338961A (en) * | 1978-10-13 | 1994-08-16 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5742087A (en) * | 1978-10-13 | 1998-04-21 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5191396A (en) * | 1978-10-13 | 1993-03-02 | International Rectifier Corp. | High power mosfet with low on-resistance and high breakdown voltage |
US5598018A (en) * | 1978-10-13 | 1997-01-28 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
JPS55146944A (en) * | 1979-02-15 | 1980-11-15 | Texas Instruments Inc | Method of fabricating monolithic integrated microelectronic semiconductor circuit |
JPS5585073A (en) * | 1979-12-17 | 1980-06-26 | Hitachi Ltd | Manufacture of insulation gate type electric field effect transistor |
JPS6041876B2 (ja) * | 1979-12-17 | 1985-09-19 | 株式会社日立製作所 | 絶縁ゲ−ト型電界効果トランジスタの製造方法 |
JPS582074A (ja) * | 1981-06-17 | 1983-01-07 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | 絶縁ゲ−ト電界効果トランジスタの製造方法 |
US4974059A (en) * | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
US5223732A (en) * | 1991-05-28 | 1993-06-29 | Motorola, Inc. | Insulated gate semiconductor device with reduced based-to-source electrode short |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
US6046473A (en) * | 1995-06-07 | 2000-04-04 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of MOS-gated power devices |