JPS4840814A - - Google Patents

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Publication number
JPS4840814A
JPS4840814A JP7477871A JP7477871A JPS4840814A JP S4840814 A JPS4840814 A JP S4840814A JP 7477871 A JP7477871 A JP 7477871A JP 7477871 A JP7477871 A JP 7477871A JP S4840814 A JPS4840814 A JP S4840814A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7477871A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7477871A priority Critical patent/JPS4840814A/ja
Publication of JPS4840814A publication Critical patent/JPS4840814A/ja
Pending legal-status Critical Current

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  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
JP7477871A 1971-09-25 1971-09-25 Pending JPS4840814A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7477871A JPS4840814A (fr) 1971-09-25 1971-09-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7477871A JPS4840814A (fr) 1971-09-25 1971-09-25

Publications (1)

Publication Number Publication Date
JPS4840814A true JPS4840814A (fr) 1973-06-15

Family

ID=13557074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7477871A Pending JPS4840814A (fr) 1971-09-25 1971-09-25

Country Status (1)

Country Link
JP (1) JPS4840814A (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5181577A (ja) * 1975-01-16 1976-07-16 Hitachi Ltd Kotaiatsuzenengeetogatadenkaikokatoranjisuta
JPS5185381A (fr) * 1975-01-24 1976-07-26 Hitachi Ltd
JPS5585073A (en) * 1979-12-17 1980-06-26 Hitachi Ltd Manufacture of insulation gate type electric field effect transistor
JPS55146944A (en) * 1979-02-15 1980-11-15 Texas Instruments Inc Method of fabricating monolithic integrated microelectronic semiconductor circuit
JPS582074A (ja) * 1981-06-17 1983-01-07 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 絶縁ゲ−ト電界効果トランジスタの製造方法
US4376286A (en) * 1978-10-13 1983-03-08 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4705759A (en) * 1978-10-13 1987-11-10 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
US5223732A (en) * 1991-05-28 1993-06-29 Motorola, Inc. Insulated gate semiconductor device with reduced based-to-source electrode short
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5181577A (ja) * 1975-01-16 1976-07-16 Hitachi Ltd Kotaiatsuzenengeetogatadenkaikokatoranjisuta
JPS6037624B2 (ja) * 1975-01-16 1985-08-27 株式会社日立製作所 高耐圧絶縁ゲ−ト型電界効果トランジスタ
JPS5185381A (fr) * 1975-01-24 1976-07-26 Hitachi Ltd
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4376286A (en) * 1978-10-13 1983-03-08 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4705759A (en) * 1978-10-13 1987-11-10 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5191396A (en) * 1978-10-13 1993-03-02 International Rectifier Corp. High power mosfet with low on-resistance and high breakdown voltage
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
JPS55146944A (en) * 1979-02-15 1980-11-15 Texas Instruments Inc Method of fabricating monolithic integrated microelectronic semiconductor circuit
JPS5585073A (en) * 1979-12-17 1980-06-26 Hitachi Ltd Manufacture of insulation gate type electric field effect transistor
JPS6041876B2 (ja) * 1979-12-17 1985-09-19 株式会社日立製作所 絶縁ゲ−ト型電界効果トランジスタの製造方法
JPS582074A (ja) * 1981-06-17 1983-01-07 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 絶縁ゲ−ト電界効果トランジスタの製造方法
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
US5223732A (en) * 1991-05-28 1993-06-29 Motorola, Inc. Insulated gate semiconductor device with reduced based-to-source electrode short
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6046473A (en) * 1995-06-07 2000-04-04 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices

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