JPS4840343A - - Google Patents
Info
- Publication number
- JPS4840343A JPS4840343A JP47094723A JP9472372A JPS4840343A JP S4840343 A JPS4840343 A JP S4840343A JP 47094723 A JP47094723 A JP 47094723A JP 9472372 A JP9472372 A JP 9472372A JP S4840343 A JPS4840343 A JP S4840343A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/4067—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the bipolar type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/10—Memory cells having a cross-point geometry
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4426371A GB1390034A (en) | 1971-09-22 | 1971-09-22 | Semiconductor information storage devices |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4840343A true JPS4840343A (it) | 1973-06-13 |
Family
ID=10432499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP47094723A Pending JPS4840343A (it) | 1971-09-22 | 1972-09-22 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS4840343A (it) |
BR (1) | BR7206604D0 (it) |
DE (1) | DE2246331A1 (it) |
GB (1) | GB1390034A (it) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5183740A (it) * | 1974-12-19 | 1976-07-22 | Ibm | |
JPS54148749A (en) * | 1978-05-10 | 1979-11-21 | Hoechst Ag | Manufacture of monoarylthiourea |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5370679A (en) * | 1976-12-06 | 1978-06-23 | Nippon Gakki Seizo Kk | Transistor |
DE3824694A1 (de) * | 1988-07-20 | 1990-02-01 | Fraunhofer Ges Forschung | Halbleiterschaltung fuer schnelle schaltvorgaenge |
-
1971
- 1971-09-22 GB GB4426371A patent/GB1390034A/en not_active Expired
-
1972
- 1972-09-21 DE DE2246331A patent/DE2246331A1/de active Pending
- 1972-09-22 JP JP47094723A patent/JPS4840343A/ja active Pending
- 1972-09-25 BR BR006604/72A patent/BR7206604D0/pt unknown
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5183740A (it) * | 1974-12-19 | 1976-07-22 | Ibm | |
JPS5727550B2 (it) * | 1974-12-19 | 1982-06-11 | ||
JPS54148749A (en) * | 1978-05-10 | 1979-11-21 | Hoechst Ag | Manufacture of monoarylthiourea |
JPS6354704B2 (it) * | 1978-05-10 | 1988-10-28 | Hoechst Ag |
Also Published As
Publication number | Publication date |
---|---|
DE2246331A1 (de) | 1973-03-29 |
GB1390034A (en) | 1975-04-09 |
BR7206604D0 (pt) | 1973-08-30 |