JPS4832779A - - Google Patents
Info
- Publication number
- JPS4832779A JPS4832779A JP47080085A JP8008572A JPS4832779A JP S4832779 A JPS4832779 A JP S4832779A JP 47080085 A JP47080085 A JP 47080085A JP 8008572 A JP8008572 A JP 8008572A JP S4832779 A JPS4832779 A JP S4832779A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/066—Injection or centrifugal force system
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
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- H10P14/263—
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- H10P14/265—
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- H10P14/2911—
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- H10P14/3421—
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- H10P95/00—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17585671A | 1971-08-30 | 1971-08-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4832779A true JPS4832779A (show.php) | 1973-05-02 |
Family
ID=22641941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47080085A Pending JPS4832779A (show.php) | 1971-08-30 | 1972-08-11 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS4832779A (show.php) |
| DE (1) | DE2242138A1 (show.php) |
| FR (1) | FR2150756A1 (show.php) |
| IT (1) | IT964142B (show.php) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5440567A (en) * | 1977-09-06 | 1979-03-30 | Matsushita Electric Ind Co Ltd | Crystal growth device |
| JPS6155102A (ja) * | 1984-08-10 | 1986-03-19 | ヘキスト・アクチエンゲゼルシヤフト | 低下した接着力および改善された抗張力を有するポリビニルブチラールの製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840806A (show.php) * | 1971-09-21 | 1973-06-15 |
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1972
- 1972-07-26 FR FR7228837A patent/FR2150756A1/fr active Granted
- 1972-08-11 JP JP47080085A patent/JPS4832779A/ja active Pending
- 1972-08-22 IT IT28365/72A patent/IT964142B/it active
- 1972-08-26 DE DE2242138A patent/DE2242138A1/de active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840806A (show.php) * | 1971-09-21 | 1973-06-15 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5440567A (en) * | 1977-09-06 | 1979-03-30 | Matsushita Electric Ind Co Ltd | Crystal growth device |
| JPS6155102A (ja) * | 1984-08-10 | 1986-03-19 | ヘキスト・アクチエンゲゼルシヤフト | 低下した接着力および改善された抗張力を有するポリビニルブチラールの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2242138A1 (de) | 1973-03-08 |
| IT964142B (it) | 1974-01-21 |
| FR2150756A1 (en) | 1973-04-13 |
| FR2150756B1 (show.php) | 1975-09-12 |