JPS4830712B1 - - Google Patents
Info
- Publication number
- JPS4830712B1 JPS4830712B1 JP41085557A JP8555766A JPS4830712B1 JP S4830712 B1 JPS4830712 B1 JP S4830712B1 JP 41085557 A JP41085557 A JP 41085557A JP 8555766 A JP8555766 A JP 8555766A JP S4830712 B1 JPS4830712 B1 JP S4830712B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DET0030152 | 1965-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4830712B1 true JPS4830712B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-09-22 |
Family
ID=7555403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP41085557A Pending JPS4830712B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1965-12-28 | 1966-12-27 |
Country Status (4)
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3758831A (en) * | 1971-06-07 | 1973-09-11 | Motorola Inc | Transistor with improved breakdown mode |
JPS5648981B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-05-25 | 1981-11-19 | ||
JPS543479A (en) * | 1977-06-09 | 1979-01-11 | Toshiba Corp | Semiconductor device and its manufacture |
US5340752A (en) * | 1992-10-23 | 1994-08-23 | Ncr Corporation | Method for forming a bipolar transistor using doped SOG |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2804405A (en) * | 1954-12-24 | 1957-08-27 | Bell Telephone Labor Inc | Manufacture of silicon devices |
US3312881A (en) * | 1963-11-08 | 1967-04-04 | Ibm | Transistor with limited area basecollector junction |
US3295030A (en) * | 1963-12-18 | 1966-12-27 | Signetics Corp | Field effect transistor and method |
US3305913A (en) * | 1964-09-11 | 1967-02-28 | Northern Electric Co | Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating |
US3341377A (en) * | 1964-10-16 | 1967-09-12 | Fairchild Camera Instr Co | Surface-passivated alloy semiconductor devices and method for producing the same |
US3389023A (en) * | 1966-01-14 | 1968-06-18 | Ibm | Methods of making a narrow emitter transistor by masking and diffusion |
-
1966
- 1966-11-30 GB GB53565/66A patent/GB1099049A/en not_active Expired
- 1966-12-23 FR FR88757A patent/FR1506762A/fr not_active Expired
- 1966-12-27 JP JP41085557A patent/JPS4830712B1/ja active Pending
- 1966-12-28 US US605342A patent/US3507715A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3507715A (en) | 1970-04-21 |
GB1099049A (en) | 1968-01-10 |
FR1506762A (fr) | 1967-12-22 |
DE1514912A1 (de) | 1969-06-26 |
DE1514912B2 (de) | 1975-10-16 |