FR1506762A - Procédé de production d'un transistor - Google Patents
Procédé de production d'un transistorInfo
- Publication number
- FR1506762A FR1506762A FR88757A FR88757A FR1506762A FR 1506762 A FR1506762 A FR 1506762A FR 88757 A FR88757 A FR 88757A FR 88757 A FR88757 A FR 88757A FR 1506762 A FR1506762 A FR 1506762A
- Authority
- FR
- France
- Prior art keywords
- transistor
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DET0030152 | 1965-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1506762A true FR1506762A (fr) | 1967-12-22 |
Family
ID=7555403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR88757A Expired FR1506762A (fr) | 1965-12-28 | 1966-12-23 | Procédé de production d'un transistor |
Country Status (4)
Country | Link |
---|---|
US (1) | US3507715A (fr) |
JP (1) | JPS4830712B1 (fr) |
FR (1) | FR1506762A (fr) |
GB (1) | GB1099049A (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3758831A (en) * | 1971-06-07 | 1973-09-11 | Motorola Inc | Transistor with improved breakdown mode |
JPS5648981B2 (fr) * | 1973-05-25 | 1981-11-19 | ||
JPS543479A (en) * | 1977-06-09 | 1979-01-11 | Toshiba Corp | Semiconductor device and its manufacture |
US5340752A (en) * | 1992-10-23 | 1994-08-23 | Ncr Corporation | Method for forming a bipolar transistor using doped SOG |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2804405A (en) * | 1954-12-24 | 1957-08-27 | Bell Telephone Labor Inc | Manufacture of silicon devices |
US3312881A (en) * | 1963-11-08 | 1967-04-04 | Ibm | Transistor with limited area basecollector junction |
US3295030A (en) * | 1963-12-18 | 1966-12-27 | Signetics Corp | Field effect transistor and method |
US3305913A (en) * | 1964-09-11 | 1967-02-28 | Northern Electric Co | Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating |
US3341377A (en) * | 1964-10-16 | 1967-09-12 | Fairchild Camera Instr Co | Surface-passivated alloy semiconductor devices and method for producing the same |
US3389023A (en) * | 1966-01-14 | 1968-06-18 | Ibm | Methods of making a narrow emitter transistor by masking and diffusion |
-
1966
- 1966-11-30 GB GB53565/66A patent/GB1099049A/en not_active Expired
- 1966-12-23 FR FR88757A patent/FR1506762A/fr not_active Expired
- 1966-12-27 JP JP41085557A patent/JPS4830712B1/ja active Pending
- 1966-12-28 US US605342A patent/US3507715A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB1099049A (en) | 1968-01-10 |
US3507715A (en) | 1970-04-21 |
JPS4830712B1 (fr) | 1973-09-22 |
DE1514912A1 (de) | 1969-06-26 |
DE1514912B2 (de) | 1975-10-16 |
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