JPS4829378A - - Google Patents

Info

Publication number
JPS4829378A
JPS4829378A JP46063165A JP6316571A JPS4829378A JP S4829378 A JPS4829378 A JP S4829378A JP 46063165 A JP46063165 A JP 46063165A JP 6316571 A JP6316571 A JP 6316571A JP S4829378 A JPS4829378 A JP S4829378A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP46063165A
Other languages
Japanese (ja)
Other versions
JPS5132457B2 (xx
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP46063165A priority Critical patent/JPS5132457B2/ja
Priority to CA149,470A priority patent/CA973972A/en
Priority to GB3843472A priority patent/GB1364951A/en
Priority to DE2240790A priority patent/DE2240790A1/de
Priority to NL7211422A priority patent/NL7211422A/xx
Publication of JPS4829378A publication Critical patent/JPS4829378A/ja
Publication of JPS5132457B2 publication Critical patent/JPS5132457B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1091—Substrate region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Junction Field-Effect Transistors (AREA)
JP46063165A 1971-08-19 1971-08-19 Expired JPS5132457B2 (xx)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP46063165A JPS5132457B2 (xx) 1971-08-19 1971-08-19
CA149,470A CA973972A (en) 1971-08-19 1972-08-15 Charge coupled devices using different crystal orientation
GB3843472A GB1364951A (en) 1971-08-19 1972-08-17 Twophase charge coupled device
DE2240790A DE2240790A1 (de) 1971-08-19 1972-08-18 Informationsspeicher-halbleiteranordnung
NL7211422A NL7211422A (xx) 1971-08-19 1972-08-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46063165A JPS5132457B2 (xx) 1971-08-19 1971-08-19

Publications (2)

Publication Number Publication Date
JPS4829378A true JPS4829378A (xx) 1973-04-18
JPS5132457B2 JPS5132457B2 (xx) 1976-09-13

Family

ID=13221343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46063165A Expired JPS5132457B2 (xx) 1971-08-19 1971-08-19

Country Status (5)

Country Link
JP (1) JPS5132457B2 (xx)
CA (1) CA973972A (xx)
DE (1) DE2240790A1 (xx)
GB (1) GB1364951A (xx)
NL (1) NL7211422A (xx)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119038A (en) * 1974-08-08 1976-02-16 Toyota Motor Co Ltd Denchakutosodeno kawakimuraboshihoho
JPS5332684A (en) * 1976-09-07 1978-03-28 Toshiba Corp Semiconductor memory device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234887A (en) * 1979-05-24 1980-11-18 International Business Machines Corporation V-Groove charge-coupled device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119038A (en) * 1974-08-08 1976-02-16 Toyota Motor Co Ltd Denchakutosodeno kawakimuraboshihoho
JPS5512197B2 (xx) * 1974-08-08 1980-03-31
JPS5332684A (en) * 1976-09-07 1978-03-28 Toshiba Corp Semiconductor memory device

Also Published As

Publication number Publication date
JPS5132457B2 (xx) 1976-09-13
DE2240790A1 (de) 1973-03-01
GB1364951A (en) 1974-08-29
NL7211422A (xx) 1973-02-21
CA973972A (en) 1975-09-02

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