JPS4822673B1 - - Google Patents

Info

Publication number
JPS4822673B1
JPS4822673B1 JP44090981A JP9098169A JPS4822673B1 JP S4822673 B1 JPS4822673 B1 JP S4822673B1 JP 44090981 A JP44090981 A JP 44090981A JP 9098169 A JP9098169 A JP 9098169A JP S4822673 B1 JPS4822673 B1 JP S4822673B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44090981A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP44090981A priority Critical patent/JPS4822673B1/ja
Priority to US85414A priority patent/US3662234A/en
Priority to DE19702055693 priority patent/DE2055693A1/de
Priority to GB5419570A priority patent/GB1325756A/en
Publication of JPS4822673B1 publication Critical patent/JPS4822673B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
JP44090981A 1969-11-13 1969-11-13 Pending JPS4822673B1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP44090981A JPS4822673B1 (ja) 1969-11-13 1969-11-13
US85414A US3662234A (en) 1969-11-13 1970-10-30 Semiconductor electromechanical transducer element having a p-n-p or n-p-n amplifying junction integrally associated with a strain-sensitive region
DE19702055693 DE2055693A1 (de) 1969-11-13 1970-11-12 Elektromechanisches Halbleiter Wandlerelement
GB5419570A GB1325756A (en) 1969-11-13 1970-11-13 Semiconductor electromechanical transducer element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44090981A JPS4822673B1 (ja) 1969-11-13 1969-11-13

Publications (1)

Publication Number Publication Date
JPS4822673B1 true JPS4822673B1 (ja) 1973-07-07

Family

ID=14013679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44090981A Pending JPS4822673B1 (ja) 1969-11-13 1969-11-13

Country Status (4)

Country Link
US (1) US3662234A (ja)
JP (1) JPS4822673B1 (ja)
DE (1) DE2055693A1 (ja)
GB (1) GB1325756A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022153342A (ja) * 2021-03-29 2022-10-12 エスシーティー株式会社 歪抵抗測定回路及び当該回路における歪抵抗算定方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501694A (ja) * 1973-05-07 1975-01-09
JPS55124001A (en) * 1979-03-16 1980-09-24 Hitachi Ltd Displacement converter
US4363243A (en) * 1981-05-01 1982-12-14 Eaton Corporation Strain gage measurement circuit for high temperature applications using dual constant current supplies
DE3211968A1 (de) * 1982-03-31 1983-10-13 Siemens AG, 1000 Berlin und 8000 München Drucksensor
JPS60221288A (ja) * 1984-04-13 1985-11-05 株式会社 富士電機総合研究所 圧覚認識制御装置
US5076106A (en) * 1990-03-21 1991-12-31 Amp Incorporated Normal force transducer
CA2176052A1 (en) * 1995-06-07 1996-12-08 James D. Seefeldt Transducer having a resonating silicon beam and method for forming same
US7316039B2 (en) * 2004-11-22 2008-01-08 Wootten Jr Gerald E Fitted covering having diagonal elastic bands
CN102023065B (zh) * 2009-09-11 2016-04-13 北京京东方光电科技有限公司 用于检测液晶面板生产中毛刷压入量的接触力测量基板

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3270554A (en) * 1961-01-04 1966-09-06 Bell Telephone Labor Inc Diffused layer transducers
US3312790A (en) * 1963-05-23 1967-04-04 Bell Telephone Labor Inc Stress-responsive semiconductor transducers
US3337780A (en) * 1964-05-21 1967-08-22 Bell & Howell Co Resistance oriented semiconductor strain gage with barrier isolated element
FR1522471A (fr) * 1967-03-15 1968-04-26 Csf Dispositif de mesure de contrainte
US3492513A (en) * 1967-07-27 1970-01-27 Lewis E Hollander Jr Mesa t-bar piezoresistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022153342A (ja) * 2021-03-29 2022-10-12 エスシーティー株式会社 歪抵抗測定回路及び当該回路における歪抵抗算定方法

Also Published As

Publication number Publication date
DE2055693A1 (de) 1971-05-19
GB1325756A (en) 1973-08-08
US3662234A (en) 1972-05-09

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