JPS48102779A - - Google Patents
Info
- Publication number
- JPS48102779A JPS48102779A JP3517272A JP3517272A JPS48102779A JP S48102779 A JPS48102779 A JP S48102779A JP 3517272 A JP3517272 A JP 3517272A JP 3517272 A JP3517272 A JP 3517272A JP S48102779 A JPS48102779 A JP S48102779A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3517272A JPS48102779A (es) | 1972-04-10 | 1972-04-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3517272A JPS48102779A (es) | 1972-04-10 | 1972-04-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS48102779A true JPS48102779A (es) | 1973-12-24 |
Family
ID=12434426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3517272A Pending JPS48102779A (es) | 1972-04-10 | 1972-04-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS48102779A (es) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5292475A (en) * | 1976-01-30 | 1977-08-03 | Mitsubishi Electric Corp | Growth method of semiconductor crystal |
| JPS598698A (ja) * | 1982-07-05 | 1984-01-17 | Hitachi Cable Ltd | 縦型液相エピタキシヤル成長装置 |
| JPS61181124A (ja) * | 1985-02-07 | 1986-08-13 | Nec Corp | 液相成長方法 |
| JPS61208828A (ja) * | 1985-03-14 | 1986-09-17 | Hitachi Cable Ltd | 多層の液相エピタキシヤル成長方法 |
| JPS63139093A (ja) * | 1986-12-01 | 1988-06-10 | Hitachi Cable Ltd | 液相エピタキシヤル成長装置 |
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1972
- 1972-04-10 JP JP3517272A patent/JPS48102779A/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5292475A (en) * | 1976-01-30 | 1977-08-03 | Mitsubishi Electric Corp | Growth method of semiconductor crystal |
| JPS598698A (ja) * | 1982-07-05 | 1984-01-17 | Hitachi Cable Ltd | 縦型液相エピタキシヤル成長装置 |
| JPS61181124A (ja) * | 1985-02-07 | 1986-08-13 | Nec Corp | 液相成長方法 |
| JPS61208828A (ja) * | 1985-03-14 | 1986-09-17 | Hitachi Cable Ltd | 多層の液相エピタキシヤル成長方法 |
| JPH0330980B2 (es) * | 1985-03-14 | 1991-05-01 | Hitachi Cable | |
| JPS63139093A (ja) * | 1986-12-01 | 1988-06-10 | Hitachi Cable Ltd | 液相エピタキシヤル成長装置 |