JPS48100081A - - Google Patents

Info

Publication number
JPS48100081A
JPS48100081A JP3076572A JP3076572A JPS48100081A JP S48100081 A JPS48100081 A JP S48100081A JP 3076572 A JP3076572 A JP 3076572A JP 3076572 A JP3076572 A JP 3076572A JP S48100081 A JPS48100081 A JP S48100081A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3076572A
Other versions
JPS5143952B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3076572A priority Critical patent/JPS5143952B2/ja
Publication of JPS48100081A publication Critical patent/JPS48100081A/ja
Publication of JPS5143952B2 publication Critical patent/JPS5143952B2/ja
Expired legal-status Critical Current

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  • Element Separation (AREA)
JP3076572A 1972-03-29 1972-03-29 Expired JPS5143952B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3076572A JPS5143952B2 (ja) 1972-03-29 1972-03-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3076572A JPS5143952B2 (ja) 1972-03-29 1972-03-29

Publications (2)

Publication Number Publication Date
JPS48100081A true JPS48100081A (ja) 1973-12-18
JPS5143952B2 JPS5143952B2 (ja) 1976-11-25

Family

ID=12312765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3076572A Expired JPS5143952B2 (ja) 1972-03-29 1972-03-29

Country Status (1)

Country Link
JP (1) JPS5143952B2 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144038A (ja) * 1984-12-17 1986-07-01 Mitsubishi Electric Corp 半導体ウエ−ハの製造方法
JPH04278562A (ja) * 1991-03-06 1992-10-05 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5644157A (en) * 1992-12-25 1997-07-01 Nippondenso Co., Ltd. High withstand voltage type semiconductor device having an isolation region
US6242792B1 (en) 1996-07-02 2001-06-05 Denso Corporation Semiconductor device having oblique portion as reflection

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144038A (ja) * 1984-12-17 1986-07-01 Mitsubishi Electric Corp 半導体ウエ−ハの製造方法
JPH04278562A (ja) * 1991-03-06 1992-10-05 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5644157A (en) * 1992-12-25 1997-07-01 Nippondenso Co., Ltd. High withstand voltage type semiconductor device having an isolation region
US6242792B1 (en) 1996-07-02 2001-06-05 Denso Corporation Semiconductor device having oblique portion as reflection

Also Published As

Publication number Publication date
JPS5143952B2 (ja) 1976-11-25

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