JPS48100081A - - Google Patents
Info
- Publication number
- JPS48100081A JPS48100081A JP3076572A JP3076572A JPS48100081A JP S48100081 A JPS48100081 A JP S48100081A JP 3076572 A JP3076572 A JP 3076572A JP 3076572 A JP3076572 A JP 3076572A JP S48100081 A JPS48100081 A JP S48100081A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3076572A JPS5143952B2 (ja) | 1972-03-29 | 1972-03-29 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3076572A JPS5143952B2 (ja) | 1972-03-29 | 1972-03-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS48100081A true JPS48100081A (ja) | 1973-12-18 |
JPS5143952B2 JPS5143952B2 (ja) | 1976-11-25 |
Family
ID=12312765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3076572A Expired JPS5143952B2 (ja) | 1972-03-29 | 1972-03-29 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5143952B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61144038A (ja) * | 1984-12-17 | 1986-07-01 | Mitsubishi Electric Corp | 半導体ウエ−ハの製造方法 |
JPH04278562A (ja) * | 1991-03-06 | 1992-10-05 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5644157A (en) * | 1992-12-25 | 1997-07-01 | Nippondenso Co., Ltd. | High withstand voltage type semiconductor device having an isolation region |
US6242792B1 (en) | 1996-07-02 | 2001-06-05 | Denso Corporation | Semiconductor device having oblique portion as reflection |
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1972
- 1972-03-29 JP JP3076572A patent/JPS5143952B2/ja not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61144038A (ja) * | 1984-12-17 | 1986-07-01 | Mitsubishi Electric Corp | 半導体ウエ−ハの製造方法 |
JPH04278562A (ja) * | 1991-03-06 | 1992-10-05 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5644157A (en) * | 1992-12-25 | 1997-07-01 | Nippondenso Co., Ltd. | High withstand voltage type semiconductor device having an isolation region |
US6242792B1 (en) | 1996-07-02 | 2001-06-05 | Denso Corporation | Semiconductor device having oblique portion as reflection |
Also Published As
Publication number | Publication date |
---|---|
JPS5143952B2 (ja) | 1976-11-25 |