JPS4119937B1 - - Google Patents

Info

Publication number
JPS4119937B1
JPS4119937B1 JP1285961A JP1285961A JPS4119937B1 JP S4119937 B1 JPS4119937 B1 JP S4119937B1 JP 1285961 A JP1285961 A JP 1285961A JP 1285961 A JP1285961 A JP 1285961A JP S4119937 B1 JPS4119937 B1 JP S4119937B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1285961A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4119937B1 publication Critical patent/JPS4119937B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/18—Luminescent screens
    • H01J29/28—Luminescent screens with protective, conductive or reflective layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/22—Applying luminescent coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/25—Metals
    • C03C2217/251—Al, Cu, Mg or noble metals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/913—Material designed to be responsive to temperature, light, moisture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31692—Next to addition polymer from unsaturated monomers
    • Y10T428/31696—Including polyene monomers [e.g., butadiene, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
  • Led Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Conductive Materials (AREA)
JP1285961A 1960-04-14 1961-04-14 Pending JPS4119937B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2224860A 1960-04-14 1960-04-14
US22247A US3095324A (en) 1960-04-14 1960-04-14 Method for making electrically conducting films and article

Publications (1)

Publication Number Publication Date
JPS4119937B1 true JPS4119937B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1966-11-18

Family

ID=65900815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1285961A Pending JPS4119937B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1960-04-14 1961-04-14

Country Status (4)

Country Link
US (2) US3095324A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS4119937B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1144846B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB987866A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (45)

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US3095324A (en) * 1960-04-14 1963-06-25 Gen Electric Method for making electrically conducting films and article
US3214272A (en) * 1960-05-10 1965-10-26 Method of recording still optical images by means of a photocondugtive layer using thermoplastic imagewise deformation of the image layer
US3376163A (en) * 1961-08-11 1968-04-02 Itek Corp Photosensitive cell
US3189481A (en) * 1961-08-29 1965-06-15 Gen Electric Method for the preparation of copper sulfide films and products obtained thereby
US3203836A (en) * 1961-08-29 1965-08-31 Gen Electric Method for the preparation of copper sulfide films and products obtained thereby
US3496024A (en) * 1961-10-09 1970-02-17 Monsanto Co Photovoltaic cell with a graded energy gap
NL292131A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1962-04-30
US3196009A (en) * 1962-05-08 1965-07-20 Xerox Co Electrostatic image liquid deformation development
NL292401A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1962-05-08
US3258336A (en) * 1962-05-08 1966-06-28 Xerox Corp Strippable layer frost printing
US3238041A (en) * 1962-05-08 1966-03-01 Xerox Co Relief imaging of photoresponsive member and product
CH451338A (de) * 1962-10-13 1968-05-15 Bayer Ag Fotoleitendes Bauelement aus Cadmiumsulfid und/oder -selenid enthaltendem Material und Verfahren zu dessen Herstellung
US3181172A (en) * 1962-12-26 1965-04-27 Ampex Storage media
US3373059A (en) * 1963-10-24 1968-03-12 Cievite Corp Method of making photosensitive elements
FR1409894A (fr) * 1964-07-23 1965-09-03 Electronique & Automatisme Sa Dispositif opto-électronique perfectionné
US3366517A (en) * 1964-09-23 1968-01-30 Ibm Formation of semiconductor devices
FR1450654A (fr) * 1965-07-01 1966-06-24 Radiotechnique Perfectionnements aux dispositifs semi-conducteurs de détection de radiations ionisantes
US3520732A (en) * 1965-10-22 1970-07-14 Matsushita Electric Ind Co Ltd Photovoltaic cell and process of preparation of same
US3416956A (en) * 1966-05-16 1968-12-17 Kewanee Oil Co Process for forming a barrier in a cadmium sulfide solar cell
US3720835A (en) * 1967-02-24 1973-03-13 Us Army Scanning infrared radiation sensor
US3541375A (en) * 1967-06-07 1970-11-17 Gen Electric Barrier layer electroluminescent devices
US3443170A (en) * 1968-02-09 1969-05-06 Charles F Pulvari Ohmic contact to a substrate of insulating material having a doped semiconductive oxide providing a stepped energy gap
CA918297A (en) * 1969-09-24 1973-01-02 Tanimura Shigeru Semiconductor device and method of making
US3836399A (en) * 1970-02-16 1974-09-17 Texas Instruments Inc PHOTOVOLTAIC DIODE WITH FIRST IMPURITY OF Cu AND SECOND OF Cd, Zn, OR Hg
US3755002A (en) * 1971-04-14 1973-08-28 Hitachi Ltd Method of making photoconductive film
US3767471A (en) * 1971-09-01 1973-10-23 Bell Telephone Labor Inc Group i-iii-vi semiconductors
US3907595A (en) * 1971-12-03 1975-09-23 Communications Satellite Corp Solar cells with incorporate metal leyer
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US3922553A (en) * 1972-12-15 1975-11-25 Bell Telephone Labor Inc Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes
US4025339A (en) * 1974-01-18 1977-05-24 Coulter Information Systems, Inc. Electrophotographic film, method of making the same and photoconductive coating used therewith
GB1504854A (en) * 1974-03-21 1978-03-22 Int Research & Dev Co Ltd Photodetectors and thin film photovoltaic arrays
US3976508A (en) * 1974-11-01 1976-08-24 Mobil Tyco Solar Energy Corporation Tubular solar cell devices
US3975211A (en) * 1975-03-28 1976-08-17 Westinghouse Electric Corporation Solar cells and method for making same
US4120705A (en) * 1975-03-28 1978-10-17 Westinghouse Electric Corp. Vacuum deposition process for fabricating a CdS--Cu2 S heterojunction solar cell device
DE2554626C3 (de) * 1975-12-04 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Abschirmeinrichtung und Verfahren zu deren Aufbringung
US4425194A (en) 1976-06-08 1984-01-10 Monosolar, Inc. Photo-voltaic power generating means and methods
US4400244A (en) * 1976-06-08 1983-08-23 Monosolar, Inc. Photo-voltaic power generating means and methods
JPS577171A (en) * 1980-06-16 1982-01-14 Junichi Nishizawa Manufacture of znsepn junction
US4376145A (en) * 1980-12-22 1983-03-08 W. H. Brady Co. Electroluminescent display
DE3415712A1 (de) * 1984-04-27 1985-11-07 Bloss, Werner Heinz, Prof. Dr.-Ing., 7065 Winterbach Duennschicht-fotoelement
US4710589A (en) * 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell
US4977097A (en) * 1986-10-21 1990-12-11 Ametek, Inc. Method of making heterojunction P-I-N photovoltaic cell
US5135818A (en) * 1989-03-28 1992-08-04 Hitachi Maxell, Ltd. Thin soft magnetic film and method of manufacturing the same
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US20100071751A1 (en) * 2008-09-22 2010-03-25 Electronics And Telecommunications Research Institute Photo-induced metal-insulator-transition material complex for solar cell, solar cell and solar cell module comprising the same

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DE1067124B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1959-10-15
US2704265A (en) * 1951-04-27 1955-03-15 Dean A Lyon Electrically conducting films on cast plastics
DE1002464B (de) 1951-11-23 1957-02-14 Gen Electric Elektrolumineszierende Lichtquelle
US2685530A (en) * 1952-08-01 1954-08-03 Gen Electric Method of preparing transparent luminescent screens
FR1081835A (fr) * 1953-05-05 1954-12-23 Csf Dispositif émetteur de lumière modulable
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
DE929390C (de) * 1953-11-07 1955-06-27 Pittsburgh Plate Glass Co Verfahren zur Herstellung von im wesentlichen truebungsfreiem Glas mit einem transparenten, elektrisch leitenden UEberzug
US2817799A (en) * 1953-11-25 1957-12-24 Rca Corp Semi-conductor devices employing cadmium telluride
DE1103420B (de) 1953-12-18 1961-03-30 Maria Steiner Geb Fuessel Verfahren zur Herstellung duennster dielektrischer bzw. duennster leitender Schichten, insbesondere fuer Kondensatoren und Kabel
GB788659A (en) * 1954-08-17 1958-01-08 Gen Electric Co Ltd Improvements in or relating to electroluminescent devices
DE1052563B (de) 1957-03-05 1959-03-12 Albrecht Fischer Dipl Phys Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen
US2929859A (en) * 1957-03-12 1960-03-22 Rca Corp Semiconductor devices
US2898226A (en) * 1957-12-31 1959-08-04 Sylvania Electric Prod Image display
US3082131A (en) * 1959-01-16 1963-03-19 Texas Instruments Inc Versatile transistor structure
US3095324A (en) * 1960-04-14 1963-06-25 Gen Electric Method for making electrically conducting films and article
US3121808A (en) * 1961-09-14 1964-02-18 Bell Telephone Labor Inc Low temperature negative resistance device

Also Published As

Publication number Publication date
DE1144846B (de) 1963-03-07
GB987866A (en) 1965-03-31
US3290175A (en) 1966-12-06
US3095324A (en) 1963-06-25

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