JPS4115670B1 - - Google Patents

Info

Publication number
JPS4115670B1
JPS4115670B1 JP5760063A JP5760063A JPS4115670B1 JP S4115670 B1 JPS4115670 B1 JP S4115670B1 JP 5760063 A JP5760063 A JP 5760063A JP 5760063 A JP5760063 A JP 5760063A JP S4115670 B1 JPS4115670 B1 JP S4115670B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5760063A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4115670B1 publication Critical patent/JPS4115670B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Light Receiving Elements (AREA)
JP5760063A 1962-11-14 1963-10-30 Pending JPS4115670B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US237501A US3369132A (en) 1962-11-14 1962-11-14 Opto-electronic semiconductor devices

Publications (1)

Publication Number Publication Date
JPS4115670B1 true JPS4115670B1 (enExample) 1966-09-03

Family

ID=22893983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5760063A Pending JPS4115670B1 (enExample) 1962-11-14 1963-10-30

Country Status (2)

Country Link
US (1) US3369132A (enExample)
JP (1) JPS4115670B1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3457467A (en) * 1965-06-03 1969-07-22 Westinghouse Electric Corp Heterojunction solar cell with shorted substrate
DE1514613A1 (de) * 1965-11-04 1969-06-26 Siemens Ag Optoelektronische Halbleitervorrichtung
DE1287711C2 (enExample) * 1967-03-14 1969-09-11
US3506830A (en) * 1968-02-26 1970-04-14 Us Air Force Narrow spectral responsive p-n junction photodiode
US3614775A (en) * 1968-09-18 1971-10-19 Baldwin Co D H Optical encoder with pnpn diode sensing
US3624428A (en) * 1970-03-20 1971-11-30 Rca Corp Electric signal processing circuit employing capacitively scanned phototransistor array
US4011577A (en) * 1972-03-21 1977-03-08 Omron Tateisi Electronics Co. Mechanical-electrical force transducer with semiconductor-insulating layer-tin oxide composite
US3808476A (en) * 1973-01-05 1974-04-30 Westinghouse Electric Corp Charge pump photodetector
US4141025A (en) * 1977-03-24 1979-02-20 Gosudarstvenny Nauchno-Issle-Dovatelsky I Proektny Institut Redkometallicheskoi Promyshlennosti "GIREDMET" Semiconductor structure sensitive to pressure
US4160258A (en) * 1977-11-18 1979-07-03 Bell Telephone Laboratories, Incorporated Optically coupled linear bilateral transistor
US4158849A (en) * 1978-03-27 1979-06-19 Rca Corporation Heterojunction semiconductor device
US4203124A (en) * 1978-10-06 1980-05-13 Bell Telephone Laboratories, Incorporated Low noise multistage avalanche photodetector
US4399448A (en) * 1981-02-02 1983-08-16 Bell Telephone Laboratories, Incorporated High sensitivity photon feedback photodetectors
JPS60216591A (ja) * 1984-04-12 1985-10-30 Matsushita Electric Ind Co Ltd 半導体発光素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2776367A (en) * 1952-11-18 1957-01-01 Lebovec Kurt Photon modulation in semiconductors
NL113647C (enExample) * 1959-09-12
US3043958A (en) * 1959-09-14 1962-07-10 Philips Corp Circuit element
US3082283A (en) * 1959-11-25 1963-03-19 Ibm Radiant energy responsive semiconductor device
US3200259A (en) * 1961-08-01 1965-08-10 Rca Corp Solid state electrical devices utilizing phonon propagation

Also Published As

Publication number Publication date
US3369132A (en) 1968-02-13

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