US2762953A
(en)
*
|
1951-05-15 |
1956-09-11 |
Sylvania Electric Prod |
Contact rectifiers and methods
|
US2757323A
(en)
*
|
1952-02-07 |
1956-07-31 |
Gen Electric |
Full wave asymmetrical semi-conductor devices
|
NL177655B
(nl)
*
|
1952-04-19 |
|
Johnson & Johnson |
Chirurgisch laken.
|
US2897105A
(en)
*
|
1952-04-19 |
1959-07-28 |
Ibm |
Formation of p-n junctions
|
BE520380A
(en, 2012)
*
|
1952-06-02 |
|
|
|
NL113882C
(en, 2012)
*
|
1952-06-13 |
|
|
|
US2733390A
(en)
*
|
1952-06-25 |
1956-01-31 |
|
scanlon |
USRE24537E
(en)
*
|
1952-07-29 |
1958-09-23 |
|
Unsymmetrical conductor arrangements |
US2742383A
(en)
*
|
1952-08-09 |
1956-04-17 |
Hughes Aircraft Co |
Germanium junction-type semiconductor devices
|
US2818536A
(en)
*
|
1952-08-23 |
1957-12-31 |
Hughes Aircraft Co |
Point contact semiconductor devices and methods of making same
|
US2813817A
(en)
*
|
1952-09-20 |
1957-11-19 |
Rca Corp |
Semiconductor devices and their manufacture
|
US2953730A
(en)
*
|
1952-11-07 |
1960-09-20 |
Rca Corp |
High frequency semiconductor devices
|
US2763581A
(en)
*
|
1952-11-25 |
1956-09-18 |
Raytheon Mfg Co |
Process of making p-n junction crystals
|
US2754455A
(en)
*
|
1952-11-29 |
1956-07-10 |
Rca Corp |
Power Transistors
|
US2882464A
(en)
*
|
1952-12-04 |
1959-04-14 |
Raytheon Mfg Co |
Transistor assemblies
|
US2731704A
(en)
*
|
1952-12-27 |
1956-01-24 |
Raytheon Mfg Co |
Method of making transistors
|
BE525387A
(en, 2012)
*
|
1952-12-29 |
1900-01-01 |
|
|
NL104654C
(en, 2012)
*
|
1952-12-31 |
1900-01-01 |
|
|
US2859394A
(en)
*
|
1953-02-27 |
1958-11-04 |
Sylvania Electric Prod |
Fabrication of semiconductor devices
|
US2785095A
(en)
*
|
1953-04-01 |
1957-03-12 |
Rca Corp |
Semi-conductor devices and methods of making same
|
US3066249A
(en)
*
|
1953-04-07 |
1962-11-27 |
Sylvania Electric Prod |
Junction type semiconductor triode
|
US2916810A
(en)
*
|
1953-04-30 |
1959-12-15 |
Rca Corp |
Electric contacts
|
US2702360A
(en)
*
|
1953-04-30 |
1955-02-15 |
Rca Corp |
Semiconductor rectifier
|
US2849341A
(en)
*
|
1953-05-01 |
1958-08-26 |
Rca Corp |
Method for making semi-conductor devices
|
FR1081835A
(fr)
*
|
1953-05-05 |
1954-12-23 |
Csf |
Dispositif émetteur de lumière modulable
|
BE528756A
(en, 2012)
*
|
1953-05-11 |
|
|
|
US2756483A
(en)
*
|
1953-05-11 |
1956-07-31 |
Sylvania Electric Prod |
Junction forming crucible
|
US2867732A
(en)
*
|
1953-05-14 |
1959-01-06 |
Ibm |
Current multiplication transistors and method of producing same
|
BE529899A
(en, 2012)
*
|
1953-06-26 |
|
|
|
US2907934A
(en)
*
|
1953-08-12 |
1959-10-06 |
Gen Electric |
Non-linear resistance device
|
US2836520A
(en)
*
|
1953-08-17 |
1958-05-27 |
Westinghouse Electric Corp |
Method of making junction transistors
|
BE531626A
(en, 2012)
*
|
1953-09-04 |
|
|
|
DE1052590B
(de)
*
|
1953-09-04 |
1959-03-12 |
Deutsche Bundespost |
Verfahren zur Herstellung eines flaechenhaften Fotoelementes oder Fototransistors
|
DE1107830B
(de)
*
|
1953-09-16 |
1961-05-31 |
Licentia Gmbh |
Verfahren zum Herstellen von elektrisch unsymmetrisch leitenden Systemen
|
US2882462A
(en)
*
|
1953-09-29 |
1959-04-14 |
Gen Electric |
Semiconductor device
|
US2861017A
(en)
*
|
1953-09-30 |
1958-11-18 |
Honeywell Regulator Co |
Method of preparing semi-conductor devices
|
US2802159A
(en)
*
|
1953-10-20 |
1957-08-06 |
Hughes Aircraft Co |
Junction-type semiconductor devices
|
BE532794A
(en, 2012)
*
|
1953-10-26 |
|
|
|
US2816847A
(en)
*
|
1953-11-18 |
1957-12-17 |
Bell Telephone Labor Inc |
Method of fabricating semiconductor signal translating devices
|
US2840496A
(en)
*
|
1953-11-25 |
1958-06-24 |
Rca Corp |
Semi-conductor device
|
US2817799A
(en)
*
|
1953-11-25 |
1957-12-24 |
Rca Corp |
Semi-conductor devices employing cadmium telluride
|
US2725505A
(en)
*
|
1953-11-30 |
1955-11-29 |
Rca Corp |
Semiconductor power devices
|
GB805292A
(en)
*
|
1953-12-02 |
1958-12-03 |
Philco Corp |
Semiconductor devices
|
NL91651C
(en, 2012)
*
|
1953-12-09 |
|
|
|
US2829992A
(en)
*
|
1954-02-02 |
1958-04-08 |
Hughes Aircraft Co |
Fused junction semiconductor devices and method of making same
|
US2907969A
(en)
*
|
1954-02-19 |
1959-10-06 |
Westinghouse Electric Corp |
Photoelectric device
|
NL192903A
(en, 2012)
*
|
1954-03-05 |
|
|
|
US2812446A
(en)
*
|
1954-03-05 |
1957-11-05 |
Bell Telephone Labor Inc |
Photo-resistance device
|
US2821493A
(en)
*
|
1954-03-18 |
1958-01-28 |
Hughes Aircraft Co |
Fused junction transistors with regrown base regions
|
US2875140A
(en)
*
|
1954-04-21 |
1959-02-24 |
Philco Corp |
Method and apparatus for producing semiconductive structures
|
US2871427A
(en)
*
|
1954-04-28 |
1959-01-27 |
Gen Electric |
Germanium current controlling devices
|
GB763009A
(en)
*
|
1954-05-07 |
1956-12-05 |
British Thomson Houston Co Ltd |
Improvements in photo-electric relay apparatus
|
US2845373A
(en)
*
|
1954-06-01 |
1958-07-29 |
Rca Corp |
Semi-conductor devices and methods of making same
|
US2900584A
(en)
*
|
1954-06-16 |
1959-08-18 |
Motorola Inc |
Transistor method and product
|
US2897421A
(en)
*
|
1954-08-11 |
1959-07-28 |
Westinghouse Electric Corp |
Phototransistor design
|
US2875141A
(en)
*
|
1954-08-12 |
1959-02-24 |
Philco Corp |
Method and apparatus for use in forming semiconductive structures
|
US3087098A
(en)
*
|
1954-10-05 |
1963-04-23 |
Motorola Inc |
Transistor
|
DE1107343B
(de)
*
|
1954-10-14 |
1961-05-25 |
Licentia Gmbh |
Verfahren zum Herstellen von elektrischen Halbleiteranordnungen
|
US2879457A
(en)
*
|
1954-10-28 |
1959-03-24 |
Raytheon Mfg Co |
Ohmic semiconductor contact
|
BE542380A
(en, 2012)
*
|
1954-10-29 |
|
|
|
US2873303A
(en)
*
|
1954-11-01 |
1959-02-10 |
Philips Corp |
Photovoltaic device
|
US2874341A
(en)
*
|
1954-11-30 |
1959-02-17 |
Bell Telephone Labor Inc |
Ohmic contacts to silicon bodies
|
US2885608A
(en)
*
|
1954-12-03 |
1959-05-05 |
Philco Corp |
Semiconductive device and method of manufacture
|
GB807582A
(en)
*
|
1954-12-27 |
1959-01-21 |
Clevite Corp |
High power junction transistor
|
US2784300A
(en)
*
|
1954-12-29 |
1957-03-05 |
Bell Telephone Labor Inc |
Method of fabricating an electrical connection
|
US2815304A
(en)
*
|
1955-01-03 |
1957-12-03 |
Hughes Aircraft Co |
Process for making fused junction semiconductor devices
|
US2957788A
(en)
*
|
1955-02-08 |
1960-10-25 |
Rca Corp |
Alloy junction type semiconductor devices and methods of making them
|
NL110588C
(en, 2012)
*
|
1955-03-10 |
|
|
|
US2762001A
(en)
*
|
1955-03-23 |
1956-09-04 |
Globe Union Inc |
Fused junction transistor assemblies
|
NL204025A
(en, 2012)
*
|
1955-03-23 |
|
|
|
NL93941C
(en, 2012)
*
|
1955-03-24 |
1959-11-16 |
|
|
US2861909A
(en)
*
|
1955-04-25 |
1958-11-25 |
Rca Corp |
Semiconductor devices
|
US2825667A
(en)
*
|
1955-05-10 |
1958-03-04 |
Rca Corp |
Methods of making surface alloyed semiconductor devices
|
US2977262A
(en)
*
|
1955-05-19 |
1961-03-28 |
Rca Corp |
Semiconductor devices including gallium-containing electrodes
|
US2845374A
(en)
*
|
1955-05-23 |
1958-07-29 |
Texas Instruments Inc |
Semiconductor unit and method of making same
|
US2796563A
(en)
*
|
1955-06-10 |
1957-06-18 |
Bell Telephone Labor Inc |
Semiconductive devices
|
US2906932A
(en)
*
|
1955-06-13 |
1959-09-29 |
Sprague Electric Co |
Silicon junction diode
|
US2829993A
(en)
*
|
1955-06-24 |
1958-04-08 |
Hughes Aircraft Co |
Process for making fused junction semiconductor devices with alkali metalgallium alloy
|
US2817609A
(en)
*
|
1955-06-24 |
1957-12-24 |
Hughes Aircraft Co |
Alkali metal alloy agents for autofluxing in junction forming
|
US2921362A
(en)
*
|
1955-06-27 |
1960-01-19 |
Honeywell Regulator Co |
Process for the production of semiconductor devices
|
US2788381A
(en)
*
|
1955-07-26 |
1957-04-09 |
Hughes Aircraft Co |
Fused-junction semiconductor photocells
|
NL110728C
(en, 2012)
*
|
1955-07-28 |
1900-01-01 |
|
|
US3062690A
(en)
*
|
1955-08-05 |
1962-11-06 |
Hoffman Electronics Corp |
Semi-conductor device and method of making the same
|
US2835613A
(en)
*
|
1955-09-13 |
1958-05-20 |
Philips Corp |
Method of surface-treating semi-conductors
|
US2963390A
(en)
*
|
1955-09-26 |
1960-12-06 |
Hoffman Electronics Corp |
Method of making a photosensitive semi-conductor device
|
US2918584A
(en)
*
|
1955-10-20 |
1959-12-22 |
Burroughs Corp |
Light responsive electrical device
|
US3011067A
(en)
*
|
1955-10-25 |
1961-11-28 |
Purdue Research Foundation |
Semiconductor rectifying device having non-rectifying electrodes
|
US2937961A
(en)
*
|
1955-11-15 |
1960-05-24 |
Sumner P Wolsky |
Method of making junction semiconductor devices
|
US2945789A
(en)
*
|
1955-11-25 |
1960-07-19 |
Philco Corp |
Method for fabricating metal-semiconductor alloyed regions
|
US3075902A
(en)
*
|
1956-03-30 |
1963-01-29 |
Philco Corp |
Jet-electrolytic etching and measuring method
|
US2820135A
(en)
*
|
1956-09-05 |
1958-01-14 |
Pacific Semiconductors Inc |
Method for producing electrical contact to semiconductor devices
|
US2884508A
(en)
*
|
1956-10-01 |
1959-04-28 |
Dresser Ind |
Thin metal films and method of making same
|
US2823175A
(en)
*
|
1956-11-14 |
1958-02-11 |
Philco Corp |
Semiconductive devices
|
US2985550A
(en)
*
|
1957-01-04 |
1961-05-23 |
Texas Instruments Inc |
Production of high temperature alloyed semiconductors
|
US2979444A
(en)
*
|
1957-07-16 |
1961-04-11 |
Philco Corp |
Electrochemical method and apparatus therefor
|
US2920205A
(en)
*
|
1957-10-02 |
1960-01-05 |
Wolfgang J Choyke |
Radiant energy detector
|
DE1160959B
(de)
*
|
1958-12-31 |
1964-01-09 |
Texas Instruments Inc |
Lichtelektrische Vorrichtung
|
US2993945A
(en)
*
|
1959-02-02 |
1961-07-25 |
Rand Corp |
Solar cell and method of making
|
US3110806A
(en)
*
|
1959-05-29 |
1963-11-12 |
Hughes Aircraft Co |
Solid state radiation detector with wide depletion region
|
US3112230A
(en)
*
|
1959-11-27 |
1963-11-26 |
Transitron Electronic Corp |
Photoelectric semiconductor device
|
US3222530A
(en)
*
|
1961-06-07 |
1965-12-07 |
Philco Corp |
Ultra-sensitive photo-transistor device comprising wafer having high resistivity center region with opposite conductivity, diffused, low-resistivity, and translucent outer layers
|
US3163915A
(en)
*
|
1961-09-15 |
1965-01-05 |
Richard J Fox |
Method of fabricating surface-barrier detectors
|
US3231436A
(en)
*
|
1962-03-07 |
1966-01-25 |
Nippon Electric Co |
Method of heat treating semiconductor devices to stabilize current amplification factor characteristic
|
US3411952A
(en)
*
|
1962-04-02 |
1968-11-19 |
Globe Union Inc |
Photovoltaic cell and solar cell panel
|
US3161773A
(en)
*
|
1962-05-18 |
1964-12-15 |
Westinghouse Electric Corp |
Solid state infrared detector cell with means to discriminate between the spectral bands in the infrared spectrum
|
NL291956A
(en, 2012)
*
|
1962-06-11 |
|
|
|
US3296502A
(en)
*
|
1962-11-28 |
1967-01-03 |
Gen Instrument Corp |
Variable photosensitive semiconductor device having a graduatingly different operable surface area
|
US3281606A
(en)
*
|
1963-07-26 |
1966-10-25 |
Texas Instruments Inc |
Small light sensor package
|
US3421946A
(en)
*
|
1964-04-20 |
1969-01-14 |
Westinghouse Electric Corp |
Uncompensated solar cell
|
US3366802A
(en)
*
|
1965-04-06 |
1968-01-30 |
Fairchild Camera Instr Co |
Field effect transistor photosensitive modulator
|
US3736546A
(en)
*
|
1968-12-10 |
1973-05-29 |
J Jones |
Illumination platter on a mobile vehicle
|
JPS5130438B1
(en, 2012)
*
|
1970-04-06 |
1976-09-01 |
|
|
US3619736A
(en)
*
|
1970-06-22 |
1971-11-09 |
Mitsumi Electric Co Ltd |
Alloy junction transistor and a method of making the same
|
JPS5624969A
(en)
*
|
1979-08-09 |
1981-03-10 |
Canon Inc |
Semiconductor integrated circuit element
|