JPH1187692A - Photo-firing thyristor, fabrication thereof and photo-firing thyristor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To facilitate fabrication of a photo-firing thyristor having an erroneous firing preventing structure by forming an insulated gate transistor, a diode, or the like, on a semiconductor substrate and implanting substantially same quantity of impurities into cathode region, anode region, or the like. SOLUTION: The thyristor having PNP structure comprises a p type anode region 2, an N type anode gate region 1, a P type cathode gate region 3 and an N type cathode region 4. A resistor 13 and an insulated gate transistor Tr 14 are connected between the P type cathode gate region 3 and the N type cathode region 4. A diode 15 is connected between the gate of the Tr 14 and the cathode region 4 of the thyristor. A P type anode pseudo-potential region 5 is formed in the N type anode gate region 1 and connected with the gate of the Tr 14. The anode region 2, the cathode region 3, the P well region 6 of the Tr 14, the anode region 7 of the diode 15 and the voltage sense region are implanted simultaneously with substantially same quantity of impurity.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light firing thyristor, a method for manufacturing the same, and a light firing thyristor device.

[0002]

2. Description of the Related Art Heretofore, instead of applying a gate signal to a normal reverse blocking three-terminal thyristor having a PNPN four-layer structure, irradiation with an optical signal causes a transition from a forward blocking state to a forward conducting state. Light-ignition thyristors are known. (JP-A-5-75108, JP-A-8-316455, etc.) First, such a PN
An operation of shifting the thyristor having the PN four-layer structure from the forward blocking state to the forward conducting state will be described.

As an equivalent circuit of a thyristor composed of a PNPN junction shown in FIG. 6, two transistors of PNP and NPN internally connected as shown in FIG. 7 are considered.
(H _FE ) _{pn p} and (h _FE ) _npn are PNP and NPN, respectively.
The current gain G of the regenerative feedback loop in FIG. 7 is as follows: G = (h _FE ) _pnp × (h _FE ) _{npn Further} , the leakage current of each transistor is represented by (I)
_pnp , (I) _npn , and collector current (Ic) _pnp ,
If (Ic) _npn , then (Ic) _pnp = ( _hFE ) _pnp × | (Ic) _npn + (I) _pnp | + (I) _pnp (Ic) _npn = ( _hFE ) _npn × | (Ic) _{From pnp} + (I) _npn | + (I) _npn , the total current I is I = (1+ ( _hFE ) _pnp ) (1+ ( _hFE ) _npn ) ((I) _pnp + (I) _npn ) / ( 1-G) That is, if G <1, the thyristor is off and G
→ If it is 1, it turns on. This PNPN structure is represented by (h _FE )
_In order to make the ignition state with _pnp × (h _FE ) _npn → 1, there are a method of irradiating the thyristor surface with light and a method of flowing a current to the gate.

According to the above description, in a thyristor having a PNPN four-layer structure, (h _FE ) _{pn p} or (h _FE ) _npn
It can be easily understood that the larger the value of is, the smaller the energy for causing the thyristor to shift to the firing state may be. Next, the current amplification factor (h _FE ) of the common emitter of the transistor will be described. γ is the minority carrier injection efficiency at the transistor emitter junction, β is the minority carrier transport efficiency at the transistor base region,
Then, (h _FE ) is represented by (h _FE ) = γ · β / (1−γ · β). When γ or β is increased, (h _FE ) is increased. However, γ can be increased by setting the impurity concentration of the emitter region to the impurity concentration of the base region, and with respect to the increase of β, the transport of minority carriers or minority carriers injected from the emitter can be improved. You should be able to do well.

In recent years, with the increase in the breakdown voltage and the capacity of such a thyristor, the thyristor has a high dV / dt resistance (that is, a voltage between the anode and the cathode in the forward blocking state) while being highly sensitive to an input signal. There is a demand for a structure that has a large resistance against erroneous firing due to a change in voltage and does not cause malfunction due to noise or the like. However, in general, d
Increasing the V / dt tolerance has a contradictory relationship in that the sensitivity to input signals decreases.

FIG. 2 shows the structure of a light firing thyristor S configured to solve this problem. Since the light-firing thyristor S has a structure for preventing false firing, the dV / dt resistance can be increased while maintaining high light-firing sensitivity.
Hereinafter, the configuration and operation will be described. Now, when a steep rising voltage is applied such that the anode region 2 has a positive potential with respect to the cathode region 4, a transient current flows from the anode region 2 to the cathode region 4 inside the light-firing thyristor S. If there is no false ignition prevention means,
The light firing thyristor is erroneously fired by this transient current.

However, in the configuration shown in FIG. 2, the thyristor
P-type region 5 formed in the anode gate region 1
This area is called the anode pseudo-potential intake area).
Position (V _AQV) Rise, ie the thyristor cathode
Enhancement formed between gate region 3 and cathode region 4
Gate of the insulated gate transistor 14
Potential (V_G-FET) Rises and this transistor 14 is turned on.
State, the cathode gate region 3 of the thyristor and the cathode
The gap between the code areas 4 is clamped to prevent erroneous firing.

The anode potential of the thyristor [V _A ]
And the potential ( _VAQV ) of the anode pseudo-potential intake region has the relationship ( _VA ) _A ( _VAQV ) (1), so that the anode potential ( _VA ) of the thyristor is _equal to the above-mentioned insulated gate transistor 14. When the potential to be turned on is a potential equal to or higher than the threshold value (Vth), that is, when ( _VA )> (Vth) (2), the gap between the cathode gate region 3 and the cathode region 4 of the thyristor is established. Since the thyristor is clamped and does not shift to the ON state, the light firing thyristor S having the above-described configuration can be connected in anti-parallel as shown in FIG. 5 and used as a semiconductor relay having a zero-cross function. At this time, the following relationship is required between the reverse breakdown voltage (BVd) of the diode and the threshold (Vth) of the insulated gate transistor 14 (BVd)> (Vth) (3).

The gate of the insulated gate transistor 14 is
And the die connected between the thyristor cathode area
Ode is the gate potential of the insulated gate transistor 14
[V _G-FET) Rises more than necessary and the gate insulating film is insulated
There is to prevent being destroyed. At this time,
Reverse breakdown voltage (BVd) of circuit 15 and insulated gate type
The dielectric breakdown voltage (BV) of the gate insulating film of the transistor 14
The relationship of (BVt)> (BVd) (4) is required between t).

Further, as shown in FIG. 4, two or more diodes 15, 16 connected between the gate of the insulated gate transistor 14 and the cathode region of the thyristor are connected in series, and the sum of the reverse breakdown voltages thereof is calculated. However, the relationship of the expressions (3) and (4) may be satisfied. 2 and 4
6 and 7 indicate an anode and K indicates a cathode.

[0011]

In the method of manufacturing the light-ignition thyristor S described above, the dose of the impurity to be implanted for determining the threshold value of the insulated gate transistor is determined by the Due to the dose of impurities implanted to determine the reverse breakdown voltage of the diode connected between the gate and the cathode region of the thyristor, and the limitation that the transport efficiency of minority carriers in the cathode gate region must be increased. The manufacturing process is complicated because the dose of the impurity implanted in the cathode gate region is different from the dose of the impurity implanted in the anode region due to the restriction that the efficiency of minority carrier injection at the anode junction must be increased. Had the disadvantage of becoming

The present invention has been made in view of the above problems, and an object of the present invention is to provide a light-firing thyristor which has an erroneous-firing prevention structure and is easy to manufacture. To provide. A third object of the present invention is to provide, in addition to the first and second objects of the present invention, a light-ignition thyristor which has a low impurity accelerating energy, has a high degree of freedom in impurity implantation conditions, and can achieve an increase in throughput. To provide.

It is an object of the present invention to provide a method for manufacturing a light-ignition thyristor capable of simplifying a process for manufacturing a light-ignition thyristor. It is an object of the invention of claim 6 to provide a light-firing thyristor device which satisfies the objects of claims 1 to 3 and can be used for AC control.

[0014]

In order to achieve the above object, according to the first aspect of the present invention, there is provided an anode gate region of one conductivity type formed on one main surface of a semiconductor substrate; An anode region and a cathode gate region of opposite conductivity type formed on the substrate; a cathode region of opposite conductivity type to the cathode gate region formed in the cathode gate region; and a controlled electrode formed on the main surface of the semiconductor substrate. An insulated gate transistor in which the drain electrode and the source electrode are electrically connected to the cathode gate region and the cathode region, respectively, and at least one or more diodes formed on the main surface of the semiconductor substrate are connected in series The anode of the diode at one end is electrically connected to the gate of the insulated gate transistor, and the diode at the other end is A source includes at least one diode group electrically connected to the cathode region, and a voltage sense region formed in the anode gate region to be of the opposite conductivity type and electrically connected to the gate of the insulated gate transistor. , The cathode gate region, the well region of the insulated gate transistor, the anode region of the diode, and the voltage sense region are implanted with substantially equal amounts of impurities.

According to a second aspect of the present invention, in the first aspect of the present invention, an anode region of the opposite conductivity type formed in the anode gate region, a cathode region, a well region of an insulated gate transistor, and an anode region of a diode are provided. When,
It is characterized in that substantially equal amounts of impurities are implanted into the voltage sense region. According to the invention of claim 3, claim 1
Alternatively, in the gate insulating film of the insulated gate transistor, the threshold value of the insulated gate transistor is lower than a sum of reverse breakdown voltages of a diode group in which at least one or more diodes are connected in series. It is characterized in that the film thickness is a value.

According to a fourth aspect of the present invention, there is provided an anode gate region of one conductivity type formed on one main surface of a semiconductor substrate, and an anode region and a cathode gate region of opposite conductivity type formed in the anode gate region. A cathode region of the opposite conductivity type to the cathode gate region formed in the cathode gate region; and a drain electrode and a source electrode, which are formed on the main surface of the semiconductor substrate and are controlled electrodes, are respectively a cathode gate region. An insulated gate transistor electrically connected to the cathode region and at least one or more diodes formed on the main surface of the semiconductor substrate are connected in series, and the anode of one diode is electrically connected to the gate of the insulated gate transistor. And the cathode of the diode at the other end is electrically connected to the cathode region. Kutomo with one or more of the diode group,
A method for manufacturing a light-ignition thyristor comprising a voltage sense region formed in an anode gate region of the opposite conductivity type and electrically connected to a gate of an insulated gate transistor, comprising: a cathode gate region; an insulated gate transistor; And the anode region of the diode and the voltage sensing region are implanted with substantially equal amounts of impurities.

According to a fifth aspect of the present invention, in the fourth aspect, an anode region of the opposite conductivity type formed in the anode gate region, a cathode region, a well region of an insulated gate transistor, and an anode region of a diode are provided. When,
It is characterized in that substantially the same amount of impurities is implanted into the voltage sense region. A sixth aspect of the present invention is characterized in that the light firing thyristors of the first to third aspects are connected in antiparallel.

[0018]

Embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) The structure of the light-firing thyristor S of this embodiment is the same as that of the above-described light-firing thyristor S of FIG. 2, and its equivalent circuit is as shown in FIG. In the present embodiment, a P-type thyristor having a PNPN structure is formed by forming a P-type anode region 2, an N-type anode gate region 1, a P-type cathode gate region 3, and an N-type cathode region 4. A resistor 1 is connected between the cathode gate region 3 and the N-type cathode region 4.
An insulated gate transistor 14 of the enhancement type is connected, and a diode 15 is connected between the gate of the insulated gate transistor and the cathode region 4 of the thyristor. An anode pseudo-potential region 5 is formed and connected to the gate of the insulated gate transistor 14.

FIG. 1 is a schematic sectional view of the configuration of FIG. In the present embodiment, a P-type anode region 2, a P-type cathode gate region 3, a P-type anode region 7 of a diode 15 and an insulated gate-type A P-well region 6 of the transistor 14 and a P-type anode pseudo potential absorption region 5 are formed. An N-type cathode region 4 is provided in the P-type cathode gate region 3, and an N-type cathode region 7 is provided in the P-type anode region 7 of the diode 15. N-type drain region 8 and N-type source region 9 in P-well region 6 of insulated gate transistor 14
Is formed, and the gate insulating film 11 of the insulated gate transistor 14 is formed.
After forming a gate electrode 12 which is a polycrystalline silicon gate on the insulating film 11 of the channel No. 4, an insulating film is formed on the N-type semiconductor substrate, and the insulating film is partially removed. Aluminum electrodes to be the respective electrodes of A were prepared.

In this manufacturing process, the anode region 2 and the cathode gate region 3 of the opposite conductivity type formed in the anode gate region 1, the P well region 6 of the insulated gate transistor 14, the anode region 7 of the diode 15, the voltage A substantially equal amount of impurity is implanted into the sense region at the same time.
FIG. 3 shows the relationship between the threshold value (Vth) of the insulated gate transistor 14 and the dose of the impurity to be implanted to determine the threshold value (Vth) of the insulated gate transistor 14 and the insulated gate according to the present embodiment. The sum (BVd) of the reverse breakdown voltage of at least one diode group connected in series between the gate of the type transistor and the cathode region 4 of the thyristor and the sum (BVd) of the reverse breakdown voltage of this diode group are determined. In this graph, for example, the gate insulating film thickness of the insulated gate transistor 14 is about 100
0 ° (curve; Vth1000), about 500 ° (curve; V
(th500) and the relationship when there is one diode (curve; BVd1) and two diodes (curve; BVd2).

Here, the manufacturing method of the present invention is applied to the configuration of FIG.
When the gate insulating film thickness of No. 4 is set to about 1000 °, (3)
The relationship of the formula is satisfied in a region having a dose smaller than the dose at the point A, and the relationship of the formula (4) is approximately 2 × in consideration of the variation in the manufacturing process of the gate insulating film of the insulated gate transistor 14. It is satisfied in a region larger than 10E + 13 (cm ⁻² ). However, the control of the base region of the NPN transistor to increase the ignition sensitivity, that is, the control of the effective gate length of the cathode gate of the thyristor is controlled by the design parameter and the diffusion parameter of the cathode region 4 of the thyristor. Therefore, the amount of impurities to be implanted into the cathode gate region 3 of the thyristor may be the amount of impurities in the above-described dose range.

When the thickness of the gate insulating film of the insulated gate transistor 14 is set to about 500 °, the relation of the equation (3) is added in a region having a dose smaller than the dose at the point C, and the relation of the equation (4) is satisfied. The relationship is approximately added in a region where the dose is larger than 1 × 10E + 14 (cm ⁻² ) in consideration of the variation in the manufacturing process of the gate insulating film 11 of the insulated gate transistor 14. Here, as described above, it goes without saying that the amount of impurities to be implanted into the cathode gate region 3 and the like of the thyristor may be within this range. Further, with the impurity amount in this range, PNP for increasing the ignition sensitivity is used.
Since the diffusion condition of the emitter region of the transistor, that is, the anode region 2 of the thyristor is also satisfied, it may be used for the impurity dose of the anode region 2 of the thyristor.

The thickness of the gate insulating film is set to about 1000.degree.
When the distance is set to about 00 °, the insulated gate transistor 14
The acceleration energy of the impurity implanted through the gate insulating film 11 forming the source and drain of
By setting the thickness of the gate insulating film 11 to be thin, the acceleration energy of impurities can be suppressed low, the degree of freedom in impurity implantation conditions can be increased, and the throughput can be increased.

(Embodiment 2) The structure of the light-firing thyristor S of this embodiment is the same as that of the above-described light-firing thyristor S of FIG. 4, and its equivalent circuit is as shown in FIG. In this embodiment, two diodes 15 and 15 are provided between the gate of the insulated gate transistor 14 and the cathode region 4 of the thyristor.
16 series open circuits are connected.

The manufacturing method of the present invention is shown in FIG.
In the case where the thickness of the gate insulating film of the insulated gate transistor is set to about 1000 ° and the relationship of the formula (3) is satisfied in a region having a dose smaller than the dose at the point B shown in FIG. The relationship of the expression 4) is generally satisfied in a region where the dose is larger than 2 × 10E + 14 (cm ⁻² ) in consideration of a variation in a gate insulating film manufacturing process of the insulated gate transistor 14. Here, as described above, it goes without saying that the amount of impurities to be implanted into the cathode gate region 3 and the like of the thyristor may be within this range.

Further, when the thickness of the gate insulating film of the insulated gate transistor 14 is set to about 500 °, the relationship of the formula (3) is satisfied in a region where the dose is smaller than the dose at the point D, and the relationship of the formula (4) is satisfied. Is generally satisfied in a region where the dose is larger than 1 × 10E + 15 (cm ⁻² ) in consideration of a variation in a gate insulating film manufacturing process of the insulated gate transistor 14. Here, as described above, it goes without saying that the amount of impurities to be implanted into the cathode gate region 3 and the like of the thyristor may be within this range. Further, since the impurity amount in this range satisfies the diffusion condition of the emitter region of the PNP transistor for increasing the ignition sensitivity, that is, the anode region 2 of the thyristor, it is used for the impurity dose of the anode region 2 of the thyristor. You may.

In the present embodiment, the number of diodes is increased as compared with the case of the first embodiment. However, since the area of the diode shown on the entire chip is small, the chip area does not increase. (Embodiment 3) If the light-ignition thyristors S obtained in Embodiment 1 or 2 are connected in anti-parallel, a light-ignition thyristor device functioning as a semiconductor relay for performing AC control can be obtained.

In this embodiment, as shown in FIG.
Are connected in anti-parallel with each other. Of course, the light firing thyristor S obtained in the second embodiment
May be used. Note that the concept of simultaneously implanting impurities for manufacturing different elements of the present invention and to reduce the acceleration energy of impurities implanted through a gate insulating film to form the source and drain of an insulated gate transistor. Needless to say, the concept of thinning the gate insulating film of the insulated gate transistor can be applied to not only the example of the light-ignition thyristor in the present invention but also any other semiconductor.

[0029]

According to the first aspect of the present invention, there is provided an anode gate region of one conductivity type formed on one main surface of a semiconductor substrate, and an anode region and a cathode gate of an opposite conductivity type formed in the anode gate region. A region, a cathode region of the opposite conductivity type to the cathode gate region formed in the cathode gate region, and a drain electrode and a source electrode which are formed on the main surface of the semiconductor substrate and are controlled electrodes, respectively. An insulated gate transistor electrically connected to the region and the cathode region, and at least one or more diodes formed on the main surface of the semiconductor substrate are connected in series, and one end of the diode has an anode connected to the gate of the insulated gate transistor. And the cathode of the diode at the other end is electrically connected to the cathode region. Kutomo with one or more of the diode group,
A voltage sense region formed in the anode gate region and having the opposite conductivity type and electrically connected to the gate of the insulated gate transistor; a cathode gate region; a well region of the insulated gate transistor; and an anode region of the diode. And the voltage sense region is implanted with substantially the same amount of impurities. According to the first aspect of the present invention, an anode region of the opposite conductivity type formed in the anode gate region and a cathode are formed. The region, the well region of the insulated gate transistor, the anode region of the diode, and the voltage sense region are implanted with substantially equal amounts of impurities. It can be implanted, which has the effect of simplifying manufacturing.

According to a third aspect of the present invention, in the first or second aspect, the gate insulating film of the insulated gate transistor has a threshold value of the insulated gate transistor in which at least one or more diodes are connected in series. The acceleration energy of impurities injected through the gate insulating film to form the source and drain of an insulated gate transistor because the film thickness is lower than the sum of the reverse breakdown voltages of the selected diode group Can be suppressed, and therefore, the degree of freedom in impurity implantation conditions can be increased to provide a light-emitting thyristor with an increased through-top, and even if the number of diodes is increased, the area of the entire diode chip can be reduced. Since it is small, there is an effect that the chip area is not increased.

According to a fourth aspect of the present invention, there is provided an anode gate region of one conductivity type formed on one main surface of a semiconductor substrate, and an anode region and a cathode gate region of the opposite conductivity type formed in the anode gate region. A cathode region of the opposite conductivity type to the cathode gate region formed in the cathode gate region; and a drain electrode and a source electrode, which are formed on the main surface of the semiconductor substrate and are controlled electrodes, are respectively a cathode gate region. An insulated gate transistor electrically connected to the cathode region and at least one or more diodes formed on the main surface of the semiconductor substrate are connected in series, and the anode of one diode is electrically connected to the gate of the insulated gate transistor. While the cathode of the diode at the other end is electrically connected to the cathode region. Both the one or more of the diode group,
A method for manufacturing a light-ignition thyristor comprising a voltage sense region formed in an anode gate region and having an opposite conductivity type and electrically connected to a gate of an insulated gate transistor, comprising: a cathode gate region; Of the well region, the anode region of the diode, and the voltage sensing region are implanted with substantially equal amounts of impurities.
According to a fifth aspect of the present invention, in the fourth aspect, an anode region of the opposite conductivity type formed in the anode gate region, a cathode region, a well region of the insulated gate transistor, an anode region of the diode, Since substantially the same amount of impurity is implanted into the voltage sense region, the same type of impurity diffusion region formation process can be performed simultaneously, thereby simplifying the manufacturing process, shortening the chip manufacturing period, improving the chip manufacturing yield, This has the effect of reducing the chip cost.

According to the sixth aspect, since the light-ignition thyristors according to the first to third aspects are connected in antiparallel, there is an effect that a light-ignition thyristor device usable as an AC-controlled semiconductor relay can be provided.

[Brief description of the drawings]

FIG. 1 is an enlarged sectional view of a light firing thyristor according to a first embodiment of the present invention, with a part thereof omitted;

FIG. 2 is an equivalent circuit diagram of the light firing thyristor of the above.

FIG. 3 shows a threshold value of the insulated gate transistor, a dose amount of an impurity to be implanted to determine a threshold value of the insulated gate transistor, a reverse breakdown voltage of the diode, and a reverse breakdown voltage of the diode. FIG. 4 is an explanatory diagram showing a relationship between doses of impurities to be implanted for determination.

FIG. 4 is an equivalent circuit diagram according to a second embodiment of the present invention.

FIG. 5 is a circuit diagram according to a third embodiment of the present invention.

FIG. 6 is an equivalent circuit diagram of a thyristor.

FIG. 7 is an equivalent circuit diagram for explaining the operation of the thyristor.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Anode gate region 2 Anode region 3 Cathode gate region 4 Cathode region 5 Anode pseudo potential intake region 6 P well region 7 Diode anode region 8 Insulated gate transistor drain region 9 Insulated gate transistor source region 10 Diode cathode region Reference Signs List 11 Gate insulating film of insulated gate transistor 12 Gate electrode of insulated gate transistor 13 Resistance 14 Insulated gate transistor 15 Diode S Light firing thyristor A Anode K Cathode

Claims (6)

[Claims] An anode gate region of one conductivity type formed on one main surface of a semiconductor substrate, an anode region and a cathode gate region of opposite conductivity types formed in the anode gate region, and a cathode gate region of the same type. A cathode region of the opposite conductivity type to the cathode gate region formed therein, and a drain electrode and a source electrode which are formed on the main surface of the semiconductor substrate and are controlled electrodes are electrically connected to the cathode gate region and the cathode region, respectively. Insulated gate transistor, and at least one or more diodes formed on the main surface of the semiconductor substrate are connected in series, and the anode of one diode is electrically connected to the gate of the insulated gate transistor And at least one diode whose cathode at the other end is electrically connected to the cathode region. An anode group, a voltage sense region formed in the anode gate region and having the opposite conductivity type and electrically connected to the gate of the insulated gate transistor, a cathode gate region, a well region of the insulated gate transistor, and a diode. Wherein a substantially equal amount of impurities is implanted into the anode region and the voltage sense region. 2. The method of claim 1, wherein the anode region, the cathode region, the well region of the insulated gate transistor, the anode region of the diode, and the voltage sensing region formed in the anode gate region have substantially equal amounts. The light-ignition thyristor according to claim 1, wherein an impurity is implanted. 3. A gate insulating film of an insulated gate transistor, wherein the threshold value of the insulated gate transistor is lower than a sum of reverse breakdown voltages of a group of diodes in which at least one or more diodes are connected in series. 3. The light-ignition thyristor according to claim 1, wherein the thyristor has a thickness such that: 4. An anode gate region of one conductivity type formed on one main surface of a semiconductor substrate; an anode region and a cathode gate region of opposite conductivity type formed in the anode gate region; and a cathode gate region. A cathode region of the opposite conductivity type to the cathode gate region formed therein, and a drain electrode and a source electrode which are formed on the main surface of the semiconductor substrate and are controlled electrodes are electrically connected to the cathode gate region and the cathode region, respectively. Insulated gate transistor, and at least one or more diodes formed on the main surface of the semiconductor substrate are connected in series, and the anode of one diode is electrically connected to the gate of the insulated gate transistor And at least one diode whose cathode at the other end is electrically connected to the cathode region. A method for manufacturing a light-ignition thyristor comprising a group of diodes and a voltage sense region formed in the anode gate region and having the opposite conductivity type and electrically connected to the gate of the insulated gate transistor, comprising: a cathode gate region; A well region of an insulated gate transistor;
A method for manufacturing a light-ignition thyristor, comprising implanting substantially equal amounts of impurities into an anode region of a diode and a voltage sense region. 5. The semiconductor device according to claim 1, wherein said impurity regions are formed in said anode gate region and have substantially equal amounts of impurities in said anode region, cathode region, well region of insulated gate transistor, anode region of diode, and voltage sense region. 5. The method for manufacturing a light-ignition thyristor according to claim 4, wherein said thyristor is injected. 6. A light-firing thyristor device comprising the light-firing thyristors according to claim 1 connected in anti-parallel.