JPH1183901A - Probe card - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress displacement of a tip of a probe even under a heat cycle environment, by using for a material of a part supporting the tip part of the probe the same as a material of an inspected wafer or one that has approximately the same coefficient of thermal expansion as the wafer. SOLUTION: A probe card A testing an integrated circuit on a wafer has supporting mechanism parts 220A supporting a plurality of probes 100 at the side of tips parts 110, a substrate part 300 which has a predetermined circuit formed thereat and to which base ends of the probes are fixed, and funning bodies 250 fixed to the supporting mechanism parts 220A by clamping parts 510 and the substrate part 300 by clamping parts 520. A material for the supporting mechanism parts 220A and funning bodies 250 is equal to that constituting the inspected wafer, e.g. silicon or has nearly the same coefficient of thermal expansion as silicon. Even when the inspected wafer expands to increase a distance between electrode pads at high temperatures on the occasion of a burn-in test, a distance of the tips 110a of the probes 100 fixed to the supporting mechanism parts 220A expand in the same manner.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a probe card used for measuring various electrical characteristics of an integrated circuit formed on a wafer.

[0002]

2. Description of the Related Art As shown in FIG. 4 (schematic sectional view), a conventional probe card B has a completed wafer 60 fixed on a movable table 700 by vacuum suction or the like.
A substrate 300 on which a predetermined pattern wiring is formed and a probe attached to the substrate 300 are used in a wafer test for measuring various electrical characteristics of the integrated circuit 610 formed on the substrate 300. A ring 20 made of ceramics or the like as a support mechanism for supporting 100
0, and a plurality of probes 100 mounted in a state supported by the ring 200.

[0003] The substrate 300 and the ring 200 are attached with an epoxy adhesive 400. Probe 100
Is that the tip 110 is sharpened,
It is bent about 5 degrees. The base end portion of the probe 100 is connected to a printed wiring terminal 310 on the lower surface side of the substrate 300.
Is fixed by soldering. The tip 110 side of the probe 100 is attached to the ring 200 with an epoxy adhesive 400.

[0004] The probe card B has a probe 100
The tip 110 a of the tip 110 is designed and manufactured so as to contact the electrode pad 611 of the integrated circuit 610 formed on the wafer 600. At the time of wafer test, the probe card B is connected to the prober fixing base 8.
00 is fixed (set) by a screw body 811 composed of a bolt and a nut.
Fixed above zero.

When the movable table 700 is raised by a driving device (not shown), the electrode pads 611 of the integrated circuit 610 formed on the wafer 600 and the fixed base 80
The tip 110a of the probe 100 of the probe card B set to 0 is contacted.

In this state, an electric signal from a test computer (not shown) connected to the connector 320 provided on the upper surface side of the substrate 300 receives an integrated circuit 610 through the probe 100 through the pattern wiring of the substrate 300 and the through hole 315. And the integrated circuit 6 in a predetermined area with which the tip 110a of the probe 100 is in contact.
10 is tested.

When the test on the integrated circuit 610 in the predetermined area is completed, the movable table 700 is lowered by a driving device (not shown), and is moved sideways by a distance based on the size of the integrated circuit 610 (chip). After being moved, it is raised again, and the integrated circuit 6 in the next predetermined area is moved.
The test is started for 10 and this operation is performed for wafer 6
This operation is repeated for all of the plurality of integrated circuits 610 formed on the memory device 00.

[0008]

In this situation, the integrated circuit 6
As the high integration and miniaturization of 10 have progressed and a large number of integrated circuits 610 need to be subjected to a wafer test at a time, a large probe card having a large number of probes has been used. In addition, there are many opportunities to perform a heat cycle test called a burn-in test. At this time, since a wafer test is performed in a wide temperature range up to a high temperature, a thermal expansion coefficient different from that of the wafer 600 (usually made of silicon) is obtained. In the conventional probe card B made of a material, the tip 110a of the probe 100 and the integrated circuit 610 at room temperature are used.
Even when the electrode pad 611 is aligned with the center portion, the phenomenon that the electrode pad 611 is displaced when the temperature changes has become noticeable.

This displacement may be larger than half of the electrode pad 611, and as a result, the probe 10
The leading end 110a of the probe card B comes off the electrode pad 611, and the conventional probe card B cannot cope with the burn-in test. The market demand for this burn-in test has been increasing in recent years, and in some cases, it has become a serious situation that it is not possible to respond to the burn-in test.

The causes include the following. When the number of the probes 100 is large, the dimension between the probes 100 located at both ends is increased. In this state, when a test is performed at a high temperature by a burn-in test, the thermal expansion coefficient of the wafer 600 (usually made of silicon) and the support mechanism as a support mechanism in which the tip portions 110 of the plurality of probes 100 are arranged and fixed are arranged. The effect of the difference from the coefficient of thermal expansion of the ring 200 (usually made of alumina) made of ceramics or the like becomes significant.

In addition, a ring 200 (usually made of alumina) is fixed to a substrate 300 (usually made of glass epoxy resin) with an epoxy adhesive 400, and the substrate 300 is larger than the ring 200. The influence of the difference in the thermal expansion coefficient of the glass epoxy resin (usually made of glass epoxy resin) predominantly adds to the above-mentioned effects. That is, the ring 200 (usually made of alumina) is greatly affected by the thermal expansion of the substrate 300 (usually made of glass epoxy resin), and has a thermal expansion state closer to that of the substrate 300 than when the ring 200 is used alone. Become.

For example, the thermal expansion coefficient of the substrate 300 (made of glass epoxy resin) is about ten times as large as that of the wafer 600 (made of silicon). Therefore, the ring 200
Is a substrate 300 that thermally expands about 10 times that of the wafer 600
While expanding under the influence of thermal expansion of the wafer 600. That is, the distance between the distal end 110 of the probe 100 and the distal end 110 of the adjacent probe 100 for the distal end 110 of the probe 100 mounted so as to be supported by the ring 200 is different from that of the electrode pad 611 on the wafer 600. The distance between the tip of the probe 100 and the electrode pad 611 becomes larger than the distance between the electrode pad 611 and the adjacent electrode pad 611. This relative displacement is cumulatively larger for the probes 100 located at both ends of the plurality of probes 100.

As the integration degree and the miniaturization of the integrated circuit 610 progress, the dimensions of the electrode pads 611 tend to be reduced. Therefore, the tip 110 a of the probe 100 is easily detached from the electrode pad 611.

An object of the present invention is to address the above-mentioned problems and to provide an electrode pad of an integrated circuit formed on a wafer as an object to be inspected even in a heat cycle environment such as a burn-in test. An object of the present invention is to provide a probe card in which the tip of a probe set on the electrode pad is less likely to be relatively displaced.

[0015]

In order to solve the above-mentioned problems, a probe card according to the present invention uses the same material as that of a wafer as an object to be inspected, as a material of a support mechanism for supporting a tip end side of a probe. It is characterized in that those having substantially the same thermal expansion coefficient are used.

Therefore, in the case of the probe card according to the present invention, the wafer as the object to be inspected and the supporting mechanism for supporting the tip of the probe in contact with the wafer (electrode pads provided on the wafer) include: Since the thermal expansion coefficients are the same or substantially the same, even under a heat cycle test environment such as a burn-in test, the displacement of the contact is almost nil as compared with the electrode pad size of the integrated circuit on the wafer. It can be in a state and does not hinder the heat cycle test.

Further, the probe card according to the present invention comprises a plurality of probes, a support mechanism for fixing the probes to support the distal ends thereof, and a substrate for fixing the base end of the probes. A probe card having a bar attached to an opening provided in the substrate, wherein the material of the support mechanism and the bar is made of the same material or coefficient of thermal expansion as the material of the wafer to be inspected. And a structure in which the support mechanism portion and the crosspiece and the crosspiece and the board portion are respectively fixed by fastening components.

Therefore, in the case of the probe card according to the present invention, a wafer as an object to be inspected, a support mechanism for supporting a probe tip side contacting the wafer (electrode pads provided on the wafer), Since the thermal expansion coefficient is the same or substantially the same as that of the crosspiece to which the support mechanism is attached, and the support mechanism is connected to the crosspiece via the crosspiece and the fastening component (because of the influence of the difference in thermal expansion coefficient). (Which works to reduce), the contact portions can be extremely small even in a heat cycle test environment such as a burn-in test.

Further, in the probe card according to the present invention, the crosspiece attached to the upper surface side of the substrate portion and the support mechanism portion are provided by the fastening components arranged in the opening in a substantially perpendicular direction. It may be characterized in that it is fixed substantially in parallel while having a predetermined interval.

Therefore, in the case of the probe card according to the present invention, by this structure, the thickness of the entirety of the probe card is made approximately the same as that of the conventional one, and the fastening component provided between the crosspiece and the support mechanism is provided. The exposed length (the length from the lower surface of the crosspiece to the upper surface of the support mechanism) can be set to a predetermined interval. In addition, since the exposed length of the fastening component that improves the efficiency can be sufficiently ensured, even if the influence of the difference in the coefficient of thermal expansion may be greatly affected, the effect is substantially reduced by the effective fastening component. be able to.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a probe card according to the present invention will be described with reference to FIGS. FIG.
FIG. 2 is a schematic cross-sectional view showing an embodiment of the probe card according to the present invention, FIG. 2 is a schematic bottom view showing the embodiment of the probe card according to the present invention, and FIG. It is a schematic perspective view which shows embodiment.
The same parts as those of the conventional probe card have basically the same numbers.

The probe card A according to the present invention comprises a plurality of probes 100 and a tip 1 of these probes 100.
And a support mechanism 220A for supporting the side of the probe 100 and a base end 12 of the probe 100 on which a predetermined pattern wiring is formed.
0 (see FIG. 2) side, and a board 250 attached to an opening 325 provided in the board 300. The support mechanism 220A and the board 2
The same material as the material of the wafer to be inspected (not shown, wafer 600 in FIG. 4) is used as the material for 50 and the material between the support mechanism 220A and the beam 250 and the beam 250 And the board part 300 are fixed with fastening parts 510 and 520, respectively.

Here, the material of the wafer to be inspected is
Description will be made below assuming that the silicon is currently the mainstream. The support mechanism 220A is, for example, a horizontally long flat plate-like body (therefore, the opening 222 at the center thereof is also a horizontally long opening), and is made of pure silicon (inorganic silicon) of the same quality as the wafer. .

The support mechanism 220A is connected to a probe 1 described later.
In order to contact-fix 00, it is necessary to consider the electrical characteristics of the support mechanism 220A. Pure silicon (inorganic silicon), when not doped with impurities, has a high electric resistance value, usually about 10 ⁻⁹ Ω. Therefore, if the voltage applied to the probe 100 at the time of the wafer test is a low voltage and the current is also a low current, there is no problem even if the current is the same.

However, even if the voltage applied to the probe 100 is high and the current is high, the support mechanism 220
In order to ignore the effect of A on the probe 100,
Pure silicon (inorganic silicon) for the support mechanism 220A
It is preferable that the fixed side of the probe 100 is coated with an insulating coating layer of a thin film of a high-insulation and high-heat-resistant material such as a low-melting glass or a heat-resistant resin to improve the insulation.

At this time, the thickness of pure silicon (inorganic silicon) of the supporting mechanism 220A is made sufficiently thicker than the thickness of the insulating coating layer. Thereby, the supporting mechanism 220A
Pure silicon (inorganic silicon) has high mechanical rigidity and can restrain the thermal expansion change of the insulating coating layer.

The substrate 300 is a multi-layer substrate made of glass epoxy resin or the like, and each layer has a through hole 315 (FIG. 2).
). In each layer, a pattern wiring is formed. A printed wiring terminal 310 (see FIG. 2) is provided at one end of the pattern wiring on the bottom surface side of the substrate 300, and the base end 120 side of the probe 100 is fixed to the printed wiring terminal 310 by soldering. Become. A terminal such as a connector is provided at one end of the pattern wiring on the upper surface side of the substrate 300, and this terminal is connected to a test computer of a prober (not shown).

At the center of the substrate 300, an opening 32 is provided.
5 have been established. The opening 325 is for visually recognizing an integrated circuit 610 formed on a wafer to be inspected (not shown, the same as the wafer 600 in FIG. 4). The shape is set accordingly.

An opening 325 on the upper surface of the substrate 300
A plurality of holes 301 to which the fastening component 520 is fixed are formed in the vicinity of the outer peripheral portion of. A plurality of through-holes 350 are formed in the peripheral portion of the substrate 300. The through-hole 350 is formed on the substrate 300 as described with reference to FIG.
When the (ultimately, the probe card A) is fixed (set) to the fixing base 800 of the prober, a fastening part such as a screw body 811 composed of a bolt and a nut is inserted.

The probe 100 is sharpened sharply by means of electrolytic polishing or the like, for example, using the tip 110 of a tungsten wire as a contact portion, and the tip 110 is 0.2 to 0.5 mm.
It is about 100-105 degrees bent at about the length. The arrangement of the probe 100, particularly the tip 11
The arrangement of the leading ends 110a of the zeros must correspond to the arrangement of the electrode pads 611 formed on the integrated circuit 610.

The crosspiece 250 is made of pure silicon and is formed in a substantially cross-plate shape as shown in FIG. 3, for example, and has an opening 222 of the support mechanism 220A at the center thereof.
Having an opening 259 having the same shape as that of the substrate 30.
It is arranged so as to bridge the upper side of the opening 325 so that the opening 325 of the 0 is not completely closed. A plurality of through-holes 251 into which the fastening components 520 are inserted are formed in a region where the crosspiece 250 and the substrate 300 are in contact with each other. The pier 250 is connected to the opening 3 of the substrate 300.
25, a fastening part 51 for fixing the support mechanism 220A to the crosspiece 250 is located in an area above the support mechanism 220A (the upper part in FIG. 1).
A plurality of through-holes 252 into which one ends of the “0” are inserted are formed at positions avoiding the probe 100.

The support mechanism 220A includes the through hole 25
2, a plurality of through holes 221 into which the other ends of the fastening components 510 are inserted.

The fastening part 510 is, for example, a bolt 510a
And a nut 510b.
The fastening component 520 is a general fastening component such as a screw.

The respective parts of the probe card A as described above are connected and fixed as follows. Probe 10
The base end portion 120 (see FIG. 2) of the “0” is fixed to the printed wiring terminal 310 (see FIG. 2) of the substrate 300 by soldering. The root side of the distal end 110 of the probe 100 is fixed to the bottom side of the support mechanism 220A by a fixing means such as an epoxy adhesive 400. The epoxy adhesive 400 is
Those having a high glass transition temperature after curing are preferred.

The head side of the bolt 510a passed through the through hole 221 is fixed to the support mechanism 220A. The tip end side of the bolt 510a is passed through the through-hole 252 of the crosspiece 250, and is fixed with a nut 510b. At this time, the support mechanism 220A and the crosspiece 250 are fixed to each other substantially in parallel with a predetermined interval by the bolt 510a and the nut 510b (that is, the fastening part 510). The predetermined interval is set so that the substrate 300 and the support mechanism 220A do not come into contact with each other even when the temperature condition changes.

The beam 250 is fixed to the hole 301 of the substrate 300 with a fastening part 520. Therefore, the support mechanism 220A to which the distal end 110 side of the probe 100 is fixed is fixed to the substrate 300 via the fastening component 510, the crosspiece 250, and the fastening component 520.

As a result, the supporting mechanism 22 can be
0A and the substrate 300 are not bonded and fixed,
Since it is fixed via the fastening part 510, the crosspiece 250, and the fastening part 520, even if the burn-in test is performed during the wafer test, the probe 100
Of the tip 110a of the tip 110 of the
The relative displacement in the horizontal direction from the position of the electrode pad 611 formed at 0 can be extremely reduced. Although the vertical displacement slightly occurs, it is only a slight change in the contact pressure of the tip 110a of the probe 100 to the electrode pad 611, and does not cause any problem (hereinafter, this vertical displacement). Is omitted).

In other words, in the burn-in test, for example, at a high temperature, the integrated circuit 610 (the main part thereof) and the supporting mechanism 220A are made of the same silicon and have the same coefficient of thermal expansion. In accordance with the expansion of the distance between the electrode pad 611 and the adjacent electrode pad 611 due to the thermal expansion of the probe, the distance between the distal end 110 of the probe 100 and the distal end 110 of the adjacent probe 100 adhered and fixed to the support mechanism 220A. (That is, the tip 1 of the probe 100
(Distance between 10a and tip 110a of adjacent probe 100)
Is similarly extended.

At this time, the base end portion 120 of the probe 100 and the base end portion 120 of the adjacent probe 100 are fixed to a substrate portion having a large coefficient of thermal expansion (in the case of glass epoxy resin, about 10 times as large as silicon). Therefore, under the influence of the influence, the expansion width is larger than the expansion dimension due to the normal thermal expansion occurring at the interval between the distal end portion 110 of the probe 100 and the distal end portion 110 of the adjacent probe 100. However, the expansion dimension beyond the normal thermal expansion is compared with the distance from the proximal end 120 side fixed by soldering the probe 100 to the distal end 110 side adhesively fixed to the support mechanism 220A. It is insignificant, and the probe 100 is slightly bent, so that the distal end 110 of the probe 100 and the distal end 1 of the adjacent probe 100 that are adhered and fixed to the support mechanism 220A.
It has little effect on the expansion occurring at intervals of 10.

The support mechanism 220A and the crosspiece 250 are made of the same silicon, and are substantially parallel to each other.
Are fixed to each other, and the mounting direction of the fastening component 510 is (substantially) perpendicular to the wafer 600. Therefore, the thermal expansion coefficient of the beam 250 itself and the supporting mechanism 220
A is the same as the thermal expansion coefficient of A, and the effect of the thermal expansion of the fastening part 510 is almost negligible in the horizontal direction.
A does not receive.

However, the bar 250 is affected not only by the thermal expansion of the bar 250 itself but also by the thermal expansion of the substrate 300 to which it is fixed. However, since the crosspiece 250 and the board 300 are fixed by the fastening part 520 (screw), the bending of the fastening part 520 and the crosspiece 250 and the board 300 are fixed.
, The difference in expansion between the beam 250 and the substrate 300 is reduced. Therefore, the influence of the thermal expansion of the substrate 300 on the crosspiece 250 is reduced. That is, the degree of expansion of the crosspiece 250 is lower than the original thermal expansion.

Further, the influence that the crosspiece 250 expands more than the original thermal expansion is caused by the support mechanism 22 via the fastening part 510.
Although transmitted to 0A, it is almost completely eliminated by bending of the fastening part 510. Therefore, even if the crosspiece 250 expands beyond the original thermal expansion, the support mechanism 220A has a structure that is hardly affected.

The diameter, length, material and the like of the fastening parts 510 and 520 are selected so that the bending can be stopped within the elastic limit.

As described above, the influence of the thermal expansion of the substrate 300 is dissociated from the support mechanism 220A to which the tip portion 110 side of the probe 100 is fixed, and the wafer 6
00, the support mechanism 220A, and the bar 250 have the same coefficient of thermal expansion, so that the position of the tip 110a of the tip 110 of the probe 100 and the position of the electrode pad 611 formed on the integrated circuit 610 are different. The relative displacement in the horizontal direction can be extremely reduced.

Next, the applicant shows from an experimental result that this displacement is extremely small.

The experimental conditions are as follows (1) to (6). (1) The support mechanism section 220A is obtained by cutting a 0.8 mm-thick silicon plate into a horizontally long ring shape using a YAG laser, and has one surface having a thickness of 0.1 mm as a heat-resistant insulating coat. A 3 mm polyimide resin plate is stuck.

(2) The probe 100 has a diameter of 250 μm.
One end of a tungsten wire having a length of 35 mm and a length of 35 mm is sharpened sharply by electrolytic polishing. This probe 10
The nickel-plated portion suitable for soldering is provided on the base end portion 120 side of No. 0. The tip 110a of the probe 100
The distal end portion 110 of the probe 100 is supported by the support mechanism 220A in a state where it matches the electrode pad 611 formed on the integrated circuit 610 (made of silicon) at room temperature.
Is fixed with a two-part epoxy adhesive. This epoxy adhesive has a high glass transition temperature after curing.

(3) The substrate 300 (a multilayer substrate made of glass epoxy resin) has an opening 325 slightly larger than the support mechanism 220A at the center. On the upper side of the opening 325 and on the upper surface of the substrate 300,
0 (made of silicon) is screwed.

(4) The crosspiece 250 and the supporting mechanism 220A to which the tip 110 side of the probe 100 is fixed have a shaft diameter of the bolt 510a and a hole diameter of the nut 510b of 2 mm, and are mutually reciprocal. Fix it.

(5) Thereafter, the proximal end 1 of the probe 100
20 is fixed to the printed wiring terminal 310 on the lower surface of the substrate 300 by soldering.

(6) The probe card A having the above configuration and the wafer 600 on which the integrated circuit 610 is formed
The entire probe apparatus (excluding the test computer part) in which was set was heated to 150 ° C. by a heater.

The experimental results under these conditions are as follows:
0 and the electrode pad 61 of the integrated circuit 610.
The misalignment with No. 1 was within a range of several μm, and there was no problem in practical use.

The probe card A preferably has the above configuration, but is not limited to the above configuration. For example, the crosspiece 250 may be fixed to the lower surface of the substrate 300 instead of being fixed to the upper surface of the substrate 300, and the fixing means may be adhesive fixing.

When the number of probes 100 is required more than the probe card A in the state shown in FIG. 2, that is, at the same time, for example, 16 or 32 or more integrated circuits 610
Although not shown, for example, the overall size of the probe card A may be increased to increase the number of probes 100 arranged, and / or to move the probes 100 up and down (in FIG. It can be arranged in two stages (front-back direction).

The material of the support mechanism 220A and the bar 250 is substantially the same as the material of the wafer to be inspected (not shown, the same as the wafer 600 of FIG. 4) in place of silicon. May be used, and it is clear that the result is the same, so that the description is omitted. However, in the case where the material of the support mechanism 220A has a low insulating property, it is only necessary to pay attention to the fact that the insulating coating layer described above is always coated on the support mechanism 220A.

Incidentally, even in the structure of the probe card B (see FIG. 4) described in the prior art, the probe 10
The material of the ring 200 (usually made of alumina) as a support mechanism for supporting the front end portion 110 of the “0” may be replaced with a material having the same or substantially the same thermal expansion coefficient as the material of the wafer 600 to be inspected. Thereby, the displacement is improved as compared with the case where the material of the ring 200 is alumina. At this time, the means for fixing the ring 200 and the substrate 300 is different from the epoxy adhesive 400 in that the fastening component 5 is used.
It is preferable to be 10, 520.

[0057]

As described above, in the probe card according to the present invention, the material of the support mechanism for supporting the tip end side of the probe is the same as or substantially the same in thermal expansion coefficient as the material of the wafer to be inspected. Characterized by using

Therefore, in the case of the probe card according to the present invention, the wafer as the object to be inspected and the supporting mechanism for supporting the probe tip portion contacting the wafer (electrode pads provided on the wafer) are: Since the thermal expansion coefficients are the same or substantially the same, even under a heat cycle test environment such as a burn-in test, the displacement of the contact is almost nil as compared with the electrode pad size of the integrated circuit on the wafer. It can be in a state, and does not hinder the heat cycle test. Therefore, if the probe card according to the present invention is used for a prober, the prober can be used without worrying about whether or not the contact is displaced even in a heat cycle test environment such as a burn-in test that is strongly demanded in the market. it can.

The probe card according to the present invention comprises a plurality of probes, a support mechanism for fixing the probes so as to support the distal ends thereof, and a substrate for fixing the base end of the probes. A probe card having a bar attached to an opening provided in the substrate, wherein the material of the support mechanism and the bar is made of the same material or coefficient of thermal expansion as the material of the wafer to be inspected. And a structure in which the support mechanism portion and the crosspiece and the crosspiece and the board portion are respectively fixed by fastening components.

Therefore, in the case of the probe card according to the present invention, a wafer as an object to be inspected, a support mechanism for supporting a probe tip side contacting the wafer (electrode pads provided on the wafer), Since the thermal expansion coefficient is the same or substantially the same as that of the crosspiece to which the support mechanism is attached, and the support mechanism is connected to the crosspiece via the crosspiece and the fastening component (because of the influence of the difference in thermal expansion coefficient). ), The contact displacement can be further reduced even in a heat cycle test environment such as a burn-in test.

Further, in the probe card according to the present invention, the crosspiece attached to the upper surface side of the substrate portion and the support mechanism portion are formed by the fastening components arranged in the opening in a substantially perpendicular direction. It may be characterized in that it is fixed substantially in parallel while having a predetermined interval.

Therefore, in the case of the probe card according to the present invention, by this structure, the thickness of the entirety of the probe card can be made approximately the same as that of the conventional one, and at the same time, the fastening component provided between the crosspiece and the support mechanism can be provided. The exposed length (the length from the lower surface of the crosspiece to the upper surface of the support mechanism) can be set to a predetermined interval. In addition, since the exposed length of the fastening component that improves the efficiency can be sufficiently ensured, even if the influence of the difference in the coefficient of thermal expansion may be greatly affected, the effect is substantially reduced by the effective fastening component. be able to. In other words, even under a heat cycle test environment such as a burn-in test, the displacement of the contact is smaller than the electrode pad dimensions of the integrated circuit on the wafer, while keeping the thickness of the entire probe card at the same level as before. It can be made almost non-existent, and does not hinder the heat cycle test.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing an embodiment of a probe card according to the present invention.

FIG. 2 is a schematic bottom view showing an embodiment of a probe card according to the present invention.

FIG. 3 is a schematic perspective view showing an embodiment of a crosspiece of the probe card according to the present invention.

FIG. 4 is a schematic sectional view showing a conventional probe card and its peripheral portion.

[Explanation of symbols]

 A probe card 100 probe 220A support mechanism

Claims (3)

[Claims] 1. A probe characterized in that a material of a support mechanism for supporting a tip end side of a probe in a probe card is made of the same material or a material having substantially the same thermal expansion coefficient as a material of a wafer to be inspected. card. 2. A plurality of probes, a support mechanism for supporting the distal ends of these probes, a substrate on which a base end of the probes is fixed, and an attachment provided on an opening provided in the substrate. A probe card having a cross section which is made of the same material as the material of the wafer to be inspected or having substantially the same thermal expansion coefficient as the material of the support mechanism and the cross section. A probe card, wherein a portion between the mechanism portion and the crosspiece and a portion between the crosspiece and the substrate portion are fixed with fastening parts. 3. The crosspiece attached to the upper surface side of the substrate portion and the support mechanism portion are formed substantially at a predetermined interval by the fastening components arranged in a substantially perpendicular direction in the opening. The probe card according to claim 2, wherein the probe card is fixed in parallel.