JPH1168408A - Dielectric filter - Google Patents

Dielectric filter

Info

Publication number
JPH1168408A
JPH1168408A JP22730497A JP22730497A JPH1168408A JP H1168408 A JPH1168408 A JP H1168408A JP 22730497 A JP22730497 A JP 22730497A JP 22730497 A JP22730497 A JP 22730497A JP H1168408 A JPH1168408 A JP H1168408A
Authority
JP
Japan
Prior art keywords
conductor
conductor films
dielectric filter
films
coaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22730497A
Other languages
Japanese (ja)
Inventor
Atsushi Furuta
淳 古田
Nobuhiro Sasaki
伸浩 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP22730497A priority Critical patent/JPH1168408A/en
Publication of JPH1168408A publication Critical patent/JPH1168408A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To increase attenuation without deteriorating an inserting loss by forming plural conductor films connected to the inner conductors of coaxial resonators on one surface of a dielectric substrate and connecting an inductor between adjacent conductor films among plural conductor films formed on the other surface opposite to it. SOLUTION: The coaxial resonators 1 are installed on a ground conductor formed on a substrate 2. The inner conductors 8 of each coaxial resonator 1 are connected to first conductor films 6a to 6c formed at intervals on the lower surface of a dielectric ceramic substrate 4 respectively through a terminal pin 7. Second conductor films 5a to 5d formed at intervals on the upper surface of the substrate 4 form capacity respectively between the first conductor films 6a to 6c to connect between the respective resonators 1. Then the inductor 13 is connected between the second conductor films 5b and 5c. Thereby an attenuating pole is formed on a high frequency side in the neighborhood of a passing band near e.g. 950 MHz, where the center frequency is e.g. 900 MHz.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、主に中心周波数が
数百MHzから数GHzで使用される移動体通信機器に
用いられる誘電体フィルタに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric filter mainly used for mobile communication equipment having a center frequency of several hundred MHz to several GHz.

【0002】[0002]

【従来の技術】従来の誘電体フィルタの一例として、図
6に外観斜視図を示す。図6において、同軸型共振器1
は、基板2上に形成された接地導体3上に接地されてい
る。また、誘電体セラミック基板4は、図7に示すよう
に、下面に第一の導体膜6a〜6cが形成され、また上
面には、第二の導体膜5a〜5dが形成され、それぞれ
対向する矢印15間の導体膜5a〜6a,6a〜5b,
5b〜6b,6b〜5c,5c〜6c,6c〜5dとの
間に容量が形成されている。なお、個々の導体膜の大き
さや位置は、容量の大きさによる。
2. Description of the Related Art FIG. 6 is an external perspective view showing an example of a conventional dielectric filter. In FIG. 6, the coaxial resonator 1
Are grounded on a ground conductor 3 formed on the substrate 2. As shown in FIG. 7, the dielectric ceramic substrate 4 has first conductor films 6a to 6c formed on the lower surface, and second conductor films 5a to 5d formed on the upper surface. Conductor films 5a to 6a, 6a to 5b, between arrows 15
Capacitors are formed between 5b to 6b, 6b to 5c, 5c to 6c, and 6c to 5d. The size and position of each conductor film depend on the size of the capacitance.

【0003】また、第一の導体膜6a,6b,6cは、
端子ピン7を介して同軸型共振器1の内導体8と接続さ
れている。また、第二の導体膜5aと5dは、接続端子
9に入出力端子10によって接続され、誘電体フィルタ
が構成されている。また、誘電体フィルタ全体を覆うよ
うに金属ケース12が同軸型共振器1及び基板2の接地
面上に設置され、接地端子11と電気的に接続されてい
る。また、この従来の誘電体フィルタの等価回路及び周
波数特性を図8及び図9に示す。
The first conductive films 6a, 6b, 6c are:
It is connected to the inner conductor 8 of the coaxial resonator 1 via the terminal pin 7. Further, the second conductor films 5a and 5d are connected to the connection terminal 9 by the input / output terminal 10 to form a dielectric filter. A metal case 12 is provided on the ground plane of the coaxial resonator 1 and the substrate 2 so as to cover the entire dielectric filter, and is electrically connected to the ground terminal 11. 8 and 9 show an equivalent circuit and a frequency characteristic of this conventional dielectric filter.

【0004】[0004]

【発明が解決しようとする課題】しかし、従来の誘電体
フィルタは、一般に、通過帯域内においては低挿入損
失、帯域外においては高減衰量が求められるが、減衰量
を大きくすると、挿入損失が増加するという問題があっ
た。
However, the conventional dielectric filter generally requires a low insertion loss in the pass band and a high attenuation outside the pass band. However, when the attenuation is increased, the insertion loss is reduced. There was a problem of increasing.

【0005】従って、本発明は、高減衰量が求められる
周波数帯域に、減衰極を形成することにより、挿入損失
の増加を低減することができ、帯域外で高減衰量であり
ながら挿入損失の小さい誘電体フィルタを提供すること
にある。
Therefore, according to the present invention, an increase in insertion loss can be reduced by forming an attenuation pole in a frequency band in which high attenuation is required. It is to provide a small dielectric filter.

【0006】[0006]

【課題を解決するための手段】本発明は、複数の同軸型
共振器を備えた誘電体フィルタであって、帯状の誘電体
セラミック基板の一方の面に前記同軸型共振器の内導体
と接続するための第一の導体膜が、ある所定の間隔をお
いて複数個形成され、該第一の導体膜と対向する他方の
面に、第二の導体膜が、ある所定の間隔をおいて複数個
形成され、前記第一の導体膜と前記第二の導体膜との間
に形成される容量によって複数の同軸型共振器間を結合
し、相隣り合う前記第二の導体膜間に、インダクタが接
続された前記誘電体セラミック基板を備えたことを特徴
とする誘電体フィルタである。
SUMMARY OF THE INVENTION The present invention is a dielectric filter having a plurality of coaxial resonators, wherein one surface of a strip-shaped dielectric ceramic substrate is connected to an inner conductor of the coaxial resonator. A plurality of first conductor films are formed at a predetermined interval, and a second conductor film is formed at a predetermined interval on the other surface facing the first conductor film. A plurality is formed, a plurality of coaxial resonators are coupled by a capacitance formed between the first conductor film and the second conductor film, and between the adjacent second conductor films, A dielectric filter comprising the dielectric ceramic substrate to which an inductor is connected.

【0007】また、本発明は、複数の同軸型共振器を備
えた誘電体フィルタであって、帯状の誘電体セラミック
基板の一方の面に前記同軸型共振器の内導体と接続する
ための第一の導体膜が、ある所定の間隔をおいて複数個
形成され、該第一の導体膜と対向する他方の面に、第二
の導体膜が、ある所定の間隔をおいて複数個形成され、
前記第一の導体膜と前記第二の導体膜との間に形成され
る容量によって複数の同軸型共振器間を結合し、相隣り
合う前記第二の導体膜間に、キャパシタが接続された前
記誘電体セラミック基板を備えたことを特徴とする誘電
体フィルタである。
[0007] The present invention also relates to a dielectric filter having a plurality of coaxial resonators, the first filter being connected to one surface of a strip-shaped dielectric ceramic substrate and the inner conductor of the coaxial resonator. A plurality of one conductive films are formed at a predetermined interval, and a plurality of second conductive films are formed at another predetermined interval on the other surface facing the first conductive film. ,
A plurality of coaxial resonators were coupled by a capacitance formed between the first conductor film and the second conductor film, and a capacitor was connected between the adjacent second conductor films. A dielectric filter comprising the dielectric ceramic substrate.

【0008】本発明は、上記において、誘電体フィルタ
の通過帯域近傍の減衰極は、図5(a)に示すように、
複数の共振器31,32,・・・,3nを結合させる結
合用キャパシタ42,43を跨ぐように、減衰極形成用
キャパシタ51を接続することによって、通過帯域の低
周波側に減衰極を形成することができる。また、図5
(b)に示すように、複数の共振器31,32,・・
・,3nを結合させるための結合用キャパシタ42,4
3を跨ぐように、減衰極形成用インダクタ52を接続す
ることによって、通過帯域の高周波側に減衰極を形成す
ることができる。また、このような結合素子を跨ぐよう
に、キャパシタまたはインダクタが複数接続されると、
それぞれ対応した複数の減衰極が形成される。
According to the present invention, the attenuation pole in the vicinity of the pass band of the dielectric filter is, as shown in FIG.
By connecting the attenuation pole forming capacitor 51 so as to straddle the coupling capacitors 42 and 43 for coupling the plurality of resonators 31, 32,..., 3n, an attenuation pole is formed on the low frequency side of the pass band. can do. FIG.
As shown in (b), a plurality of resonators 31, 32,.
..Coupling capacitors 42 and 4 for coupling 3n
By connecting the attenuation pole forming inductor 52 so as to straddle three, an attenuation pole can be formed on the high frequency side of the pass band. Further, when a plurality of capacitors or inductors are connected so as to straddle such a coupling element,
A plurality of corresponding attenuation poles are formed.

【0009】[0009]

【発明の実施の形態】以下、本発明の実施の形態につい
て図面により説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0010】まず、本発明の第1の実施の形態について
説明する。図1は、本発明の第1の実施の形態の誘電体
フィルタの外観斜視図を示す。図1において、同軸型共
振器1は、基板2上に形成された接地導体3に設置され
ており、誘電体セラミック基板4の下面には、第一の導
体膜6a〜6d及び上面には、第二の導体膜5a〜5d
が形成され、それぞれ対向する導体膜5a〜6a、6a
〜5b,5b〜6b,6b〜5c,5c〜6c,6c〜
5d間に容量が形成され、また、各導体膜は、端子ピン
7を介して同軸型共振器1の内導体8と接続されてい
る。また、誘電体セラミック基板4の上面に形成された
第二の導体膜5b,5cに、チップコンデンサ(キャパ
シタ)14が電気的に接続されている。
First, a first embodiment of the present invention will be described. FIG. 1 is an external perspective view of a dielectric filter according to a first embodiment of the present invention. In FIG. 1, a coaxial resonator 1 is provided on a ground conductor 3 formed on a substrate 2. On a lower surface of a dielectric ceramic substrate 4, first conductive films 6 a to 6 d and on an upper surface, Second conductor films 5a to 5d
Are formed, and the conductor films 5a to 6a and 6a facing each other are formed.
~ 5b, 5b ~ 6b, 6b ~ 5c, 5c ~ 6c, 6c ~
A capacitor is formed between 5d, and each conductor film is connected to the inner conductor 8 of the coaxial resonator 1 via the terminal pin 7. A chip capacitor (capacitor) 14 is electrically connected to the second conductor films 5b and 5c formed on the upper surface of the dielectric ceramic substrate 4.

【0011】また、この第1の実施の形態の誘電体フィ
ルタの周波数特性を図2に示す。図2において、中心周
波数は900MHzで、挿入損失は2.27dB、ま
た、通過帯域近傍の低周波側の850MHz付近に減衰
極を形成することによって、減衰量は、46.5dBと
従来構成に比べ、挿入損失を劣化することなく、22.
4dB改善した。
FIG. 2 shows the frequency characteristics of the dielectric filter according to the first embodiment. In FIG. 2, the center frequency is 900 MHz, the insertion loss is 2.27 dB, and the attenuation is 46.5 dB as compared with the conventional configuration by forming an attenuation pole near 850 MHz on the low frequency side near the pass band. , 22.
4 dB improvement.

【0012】次に、本発明の第2の実施の形態について
説明する。図3は、本発明の第2の実施の形態の誘電体
フィルタの外観斜視図を示す。図3において、誘電体セ
ラミック基板4の上面に形成された第二の導体膜5b、
5cにインダクタ13が電気的に接続されている以外
は、第1の実施の形態で述べたと同様である。
Next, a second embodiment of the present invention will be described. FIG. 3 is an external perspective view of a dielectric filter according to a second embodiment of the present invention. In FIG. 3, a second conductor film 5b formed on the upper surface of the dielectric ceramic substrate 4,
This is the same as described in the first embodiment, except that the inductor 13 is electrically connected to 5c.

【0013】また、この第2の実施の形態の誘電体フィ
ルタの周波数特性を図4に示す。図4において、通過帯
域近傍の高周波側に減衰極が形成されている。この誘電
体フィルタの中心周波数は900MHzで、挿入損失は
2.27dB、また、通過帯域近傍の高周波側の950
MHz付近に減衰極を形成することによって、減衰量
は、46.5dBと従来構成に比べ、挿入損失をほとん
ど劣化することなく、減衰量を22.4dB改善するこ
とができた。
FIG. 4 shows the frequency characteristics of the dielectric filter according to the second embodiment. In FIG. 4, an attenuation pole is formed on the high frequency side near the pass band. The center frequency of this dielectric filter is 900 MHz, the insertion loss is 2.27 dB, and 950 on the high frequency side near the pass band is used.
By forming the attenuation pole in the vicinity of MHz, the attenuation was 46.5 dB, and the attenuation could be improved by 22.4 dB with almost no deterioration in insertion loss as compared with the conventional configuration.

【0014】以上の実施の形態は、説明のため単純化し
ているが、同軸型共振器及び接続されるチップコンデン
サ(キャパシタ)、インダクタも複数個あっても構わな
い。さらに、キャパシタとインダクタが複数個組み合わ
されていても構わない。
Although the above embodiment has been simplified for the sake of explanation, there may be a plurality of coaxial resonators, a plurality of chip capacitors (capacitors), and a plurality of inductors connected thereto. Further, a plurality of capacitors and inductors may be combined.

【0015】[0015]

【発明の効果】以上、述べたごとく、本発明によれば、
誘電体セラミック基板上に形成された導体膜に、チップ
コンデンサ(キャパシタ)またはコイル(インダクタ)
を外付けすることによって、通過帯域近傍に減衰極を形
成することによって、通過帯域での挿入損失を劣化させ
ることなく、減衰量を大きくできる誘電体フィルタを提
供することができる。
As described above, according to the present invention,
A chip capacitor (capacitor) or a coil (inductor) is formed on a conductor film formed on a dielectric ceramic substrate.
By externally forming the filter, an attenuation pole is formed in the vicinity of the pass band, so that it is possible to provide a dielectric filter capable of increasing the attenuation without deteriorating insertion loss in the pass band.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施の形態の誘電体フィルタの
外観斜視図。
FIG. 1 is an external perspective view of a dielectric filter according to a first embodiment of the present invention.

【図2】図1の誘電体フィルタの周波数特性図。FIG. 2 is a frequency characteristic diagram of the dielectric filter of FIG.

【図3】本発明の第2の実施の形態の誘電体フィルタの
外観斜視図。
FIG. 3 is an external perspective view of a dielectric filter according to a second embodiment of the present invention.

【図4】図3の誘電体フィルタの周波数特性図。FIG. 4 is a frequency characteristic diagram of the dielectric filter of FIG.

【図5】本発明の減衰極を形成するための誘電体フィル
タの等価回路。
FIG. 5 is an equivalent circuit of a dielectric filter for forming an attenuation pole according to the present invention.

【図6】従来技術による誘電体フィルタの外観斜視図。FIG. 6 is an external perspective view of a conventional dielectric filter.

【図7】誘電体セラミック基板の構造図。FIG. 7 is a structural diagram of a dielectric ceramic substrate.

【図8】従来技術の誘電体フィルタの等価回路を示す
図。
FIG. 8 is a diagram showing an equivalent circuit of a conventional dielectric filter.

【図9】従来技術による誘電体フィルタの周波数特性を
示す図。
FIG. 9 is a diagram illustrating frequency characteristics of a dielectric filter according to the related art.

【符号の説明】[Explanation of symbols]

1 同軸型共振器 2 基板 3 接地導体 4 誘電体セラミック基板 5a,5b,5c,5d (第二の)導体膜 6a,6b,6c (第一の)導体膜 7 端子ピン 8 内導体 9 接続端子 10 入出力端子 11 接地端子 12 金属ケース 13 インダクタ 14 チップコンデンサ(キャパシタ) 15 矢印 31,32,・・・,3n 共振器 41,42,・・・,4n 結合用キャパシタ 51 減衰極形成用キャパシタ 52 減衰極形成用インダクタ C1,C2,C3,C4 キャパシタ DESCRIPTION OF SYMBOLS 1 Coaxial resonator 2 Substrate 3 Ground conductor 4 Dielectric ceramic substrate 5a, 5b, 5c, 5d (Second) conductor film 6a, 6b, 6c (First) conductor film 7 Terminal pin 8 Inner conductor 9 Connection terminal DESCRIPTION OF SYMBOLS 10 I / O terminal 11 Ground terminal 12 Metal case 13 Inductor 14 Chip capacitor (capacitor) 15 Arrow 31, 32, ..., 3n Resonator 41, 42, ..., 4n Coupling capacitor 51 Attenuation pole forming capacitor 52 Attenuation pole forming inductor C1, C2, C3, C4 Capacitor

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 複数の同軸型共振器を備えた誘電体フィ
ルタであって、誘電体セラミック基板の一方の面に前記
同軸型共振器の内導体と接続するための第一の導体膜
が、ある所定の間隔をおいて複数個形成され、該第一の
導体膜と対向する他方の面に、第二の導体膜が、ある所
定の間隔をおいて複数個形成され、前記第一の導体膜と
前記第二の導体膜との間に形成される容量によって複数
の同軸型共振器間を結合し、相隣り合う前記第二の導体
膜間に、インダクタが接続されたことを特徴とする誘電
体フィルタ。
1. A dielectric filter having a plurality of coaxial resonators, wherein a first conductor film for connecting to an inner conductor of the coaxial resonator is provided on one surface of a dielectric ceramic substrate, A plurality of second conductor films are formed at a certain predetermined interval, and a plurality of second conductor films are formed at a certain predetermined interval on the other surface facing the first conductor film. A plurality of coaxial resonators are coupled by a capacitance formed between the film and the second conductor film, and an inductor is connected between the adjacent second conductor films. Dielectric filter.
【請求項2】 複数の同軸型共振器を備えた誘電体フィ
ルタであって、誘電体セラミック基板の一方の面に前記
同軸型共振器の内導体と接続するための第一の導体膜
が、ある所定の間隔をおいて複数個形成され、該第一の
導体膜と対向する他方の面に、第二の導体膜が、ある所
定の間隔をおいて複数個形成され、前記第一の導体膜と
前記第二の導体膜との間に形成される容量によって複数
の同軸型共振器間を結合し、相隣り合う前記第二の導体
膜間に、キャパシタが接続されたことを特徴とする誘電
体フィルタ。
2. A dielectric filter comprising a plurality of coaxial resonators, wherein a first conductor film for connecting to an inner conductor of the coaxial resonator is provided on one surface of a dielectric ceramic substrate. A plurality of second conductor films are formed at a certain predetermined interval, and a plurality of second conductor films are formed at a certain predetermined interval on the other surface facing the first conductor film. A plurality of coaxial resonators are coupled by a capacitance formed between the film and the second conductive film, and a capacitor is connected between the adjacent second conductive films. Dielectric filter.
JP22730497A 1997-08-08 1997-08-08 Dielectric filter Pending JPH1168408A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22730497A JPH1168408A (en) 1997-08-08 1997-08-08 Dielectric filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22730497A JPH1168408A (en) 1997-08-08 1997-08-08 Dielectric filter

Publications (1)

Publication Number Publication Date
JPH1168408A true JPH1168408A (en) 1999-03-09

Family

ID=16858720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22730497A Pending JPH1168408A (en) 1997-08-08 1997-08-08 Dielectric filter

Country Status (1)

Country Link
JP (1) JPH1168408A (en)

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