JPH1150272A - Plasma process device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase radical density in the circumferential area, to improve the efficiency of plasma utilization and to execute treatment of a high process speed in a large area by emitting ultraviolet rays irradiating the inside of the plasma with light and executing the radicalization of neutral atoms to the side of a process treating chamber. SOLUTION: The side of wall face of a process treating chamber 8 of an airtight vessel 1 is provided with a light-emitting device 20 for emitting ultraviolet rays Q into plasma. Microwaves MW from a microwave oscillator 4 are introduced from the slit 3a of a microwave wave guide 3 into a plasma generating chamber 7. A gas for a process introduced into the plasma generating chamber 7 is activated in the plasma and passes through a punching plate 6. In the case that high frequency electric power is applied to the space between a punching plate 22 and the inside wall of the airtight vessel 1, a light-emitting medium in a translucent vessel 21 is excited and emits ultraviolet ray Q. The ultraviolet rays Q prevent the deactivation of the radicals of the gas passed through the punching plate 6 and radicalize neutral atoms.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to, for example, a process for introducing a microwave into an airtight container to convert a process gas into a plasma, and using radicals generated in the plasma to generate a large diameter semiconductor wafer or a large liquid crystal substrate. The present invention relates to a plasma processing apparatus for performing a process for etching or ashing a target object having a large area.

[0002]

2. Description of the Related Art FIG. 33 is a block diagram of a plasma processing apparatus.

A dielectric window (hereinafter, referred to as a microwave introduction window) 2 made of, for example, alumina shellac or quartz is provided on an upper portion of an airtight container 1 formed in a cylindrical cavity. For example, a microwave (Micro Wave) having a frequency of 2.45 GHz is transmitted through the wave waveguide 3.
: MW) is connected. Note that the microwave MW is supplied to the portion of the microwave waveguide 3 which is in contact with the microwave introduction window 2 by the airtight container 1.
Microwave radiation aperture (slit) to enter inside
3a are formed.

[0004] A process gas supply source 5 for supplying a process gas is connected to a side surface of the airtight container 1.

[0005] A punching plate 6 is provided inside the airtight container 1, and a plasma generation chamber 7 and a process processing chamber 8 are provided.
Are formed.

As shown in FIG. 34, the aperture ratio of the punching plate 6 is lower at the center (for example, 10% or less) and higher toward the periphery (for example, 30% or less) in order to make the radical density distribution uniform. , About 60% or less).

[0007] A stage 9 is provided in the process chamber 8, and an object 10 such as a liquid crystal substrate is mounted on the stage 9. An exhaust device 11 for exhausting the gas after the process is connected to a lower portion of the process chamber 8.

With such a configuration, the microwave M having a frequency of 2.45 GHz generated from the microwave oscillator 4 is used.
W propagates in the TE ₁₀ mode through the rectangular microwave waveguide 3, passes through the microwave introduction window 2, and is radiated from the slit 3 a to the plasma generation chamber 7.

At the same time, a process gas is introduced into the plasma generation chamber 7 from a process gas supply source 5.

When the microwave MW and the process gas are introduced into the hermetic container 1 in this manner, the microwave MW forms a standing wave between the microwave introduction window 2 and the punching plate 6, and the process MW is formed. The gas is turned into plasma.

The radicals (active species) of the process gas activated in the plasma pass through the punching plate 6 and reach the object to be processed 10, and perform an etching or ashing process. The gas after the process is
The gas is exhausted by the exhaust device 11.

In such a plasma processing apparatus, the microwave oscillator 4 is inexpensive, can transmit large power relatively easily, and has a high input density (> 100 kW / for reasons such as cm ³⁾ can be obtained a stable discharge in a frequency widely used in microwave ovens, etc. 2.4
In most cases, a 5 GHz magnetron is employed.

On the other hand, at present, with the enlargement of the liquid crystal substrate as the object to be processed, it is necessary to efficiently etch a large-area substrate, but a wavelength in a free space corresponding to a frequency of 2.45 GHz is used. Is 12.24 cm, and the generated plasma is a strong absorber of the microwave MW. Therefore, in the above-described apparatus, the high-density plasma locally generated near the microwave introduction window 2 is intended by the punching plate 6. The radical density is uniformly attenuated to make the radical density distribution on the object 10 uniform.

The radical density distribution of the generated plasma is, as shown in FIG. 35, dense at the center of the process chamber 8 and rough at the periphery. As described above, the ratio is formed to be lower in the central portion and higher in the peripheral portion.

In addition, since the radical density distribution is not uniform immediately below the punching plate 6, the radicals diffused from the pan tinc plate 6 must be uniform in order to realize a uniform process for the object 10. A certain distance (diffusion distance) is required until a state can be considered.

[0016]

As described above, in the above-described apparatus, in order to make the radical density distribution uniform, the punching plate 6 is formed not on the basis of the high plasma density condition of the central portion but on the basis of the low plasma density condition of the peripheral portion. Since the uniformity is achieved by setting the aperture ratio and increasing the diffusion distance, the efficiency of the plasma is low.

Further, in such an apparatus for locally generating high-density plasma, since the plasma density has an upper limit, the radical density per unit area decreases for a large-area substrate, which lowers the etching rate. This poses a practical problem.

As a technique for improving these, for example, there is a plasma processing apparatus for uniformizing the density of plasma by a lens effect of a dielectric as described in Japanese Patent Application Laid-Open No. 6-69161. The used dielectrics, for example, quartz, alumina, BN, and SiN, have high base material costs, are difficult to process, and have low versatility.

Accordingly, an object of the present invention is to provide a plasma processing apparatus capable of improving the utilization efficiency of plasma by further increasing the radical density in the peripheral portion, and capable of performing a large-area and high-speed process.

[0020]

According to the first aspect of the present invention, a plasma generating chamber and a process processing chamber are formed by arranging a plate having a plurality of holes in an airtight container. In a plasma processing apparatus that introduces a gas and guides a microwave to convert a process gas into a plasma, and sends radicals generated in the plasma to a process chamber through a plate to process an object to be processed, light is introduced into the plasma. This is a plasma processing apparatus provided with a light emitting unit that emits ultraviolet light that emits light to radicalize neutral atoms.

According to a second aspect of the present invention, in the plasma processing apparatus according to the first aspect, the light-emitting means includes a light-transmitting container in which a light-emitting medium that emits light by excitation is sealed, and a light-transmitting container sealed in the light-transmitting container. And an exciting means for exciting the light emitting medium to emit light.

According to a third aspect of the present invention, in the plasma processing apparatus according to the first aspect, the light emitting means includes a discharge electrode disposed opposite to an inner wall of the hermetic container, and an excitation between the inner wall of the hermetic container and the discharge electrode. A light-emitting medium supply source for flowing a light-emitting medium that emits light, and excitation means for exciting the light-emitting medium flowing between the inner wall of the hermetic container and the discharge electrode to emit light.

According to a fourth aspect of the present invention, in the plasma processing apparatus according to the first aspect, the light-emitting means includes a light-emitting medium which emits light by microwaves in a light-transmitting container. 2. The plasma processing apparatus according to claim 1, wherein the light emitting means arranges a plurality of microwave introduction windows for introducing microwaves into the hermetic container at predetermined intervals, and uses microwaves between these microwave introduction windows. This is a configuration in which a light emitting medium that emits light is sealed.

According to a sixth aspect of the present invention, in the plasma processing apparatus according to the first aspect, the light-emitting means is formed to have substantially the same shape as the plate, and a light-emitting medium which emits light by excitation is enclosed. A plasma processing apparatus comprising: a transparent container; and an excitation unit that excites a light-emitting medium sealed in the light-transmitting container to emit light.

According to a seventh aspect of the present invention, in the plasma processing apparatus according to the first aspect, the light emitting means is annularly disposed on the side of the plate in the processing chamber, and is filled with a light emitting medium which emits light by excitation. It has an optical container and an excitation unit that excites a light-emitting medium sealed in the light-transmitting container to emit light.

According to an eighth aspect of the present invention, in the plasma processing apparatus according to the first aspect, the light emitting means includes: a light-transmitting container in which a light-emitting medium that emits light by excitation is sealed; A microwave power supply for light emission for exciting a light emitting medium by introducing a wave.

According to a ninth aspect of the present invention, in the plasma processing apparatus according to the first aspect, the light-emitting means includes a light-transmitting container in which a light-emitting medium that emits light by excitation is sealed, and a predetermined distance between the light-transmitting container. And a DC power supply that supplies DC power between these electrodes to excite the light emitting medium.

According to a tenth aspect of the present invention, in the plasma processing apparatus according to the first aspect, the light-emitting means is a light-transmitting container that reflects a high frequency and transmits light, and emits light by excitation in the light-transmitting container. A light-emitting medium supply source that supplies the light-emitting medium, and a microwave power supply that excites the light-emitting medium by introducing a microwave into the light-transmitting container.

According to an eleventh aspect of the present invention, in the plasma processing apparatus according to the first aspect, the light emitting means is arranged corresponding to a portion having a low density of radicals based on a density distribution of the radicals generated in the airtight container. Is done.

According to a twelfth aspect of the present invention, in the plasma processing apparatus according to the eleventh aspect, a microwave radiating opening for radiating a microwave into the hermetic container is formed at an upper central portion of the hermetic container facing the object to be processed. In this case, the light emitting means was arranged on the wall side of the airtight container.

According to a thirteenth aspect, in the plasma processing apparatus according to the eleventh aspect, when a plurality of microwave radiation openings for radiating microwaves are formed in the airtight container above the airtight container, the light emitting means is provided. Are arranged between the respective microwave radiation openings.

According to a fourteenth aspect of the present invention, in the plasma processing apparatus according to the eleventh aspect, the light emitting means is provided between the plate and the microwave introduction window for introducing the microwave into the hermetic container in the process chamber. At least one in the window or on the microwave entry side of the microwave introduction window;
It is located at the place.

[0033]

BEST MODE FOR CARRYING OUT THE INVENTION

(1) Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. Note that the same portions as those in FIG. 33 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 1 is a configuration diagram of a plasma processing apparatus.

On the wall surface side of the processing chamber 8 in the hermetic container 1, a light emitting device 20 for emitting ultraviolet light Q into plasma to radicalize neutral atoms is provided.

FIG. 2 is an enlarged view of the light emitting device 20.

The translucent container 21 has, for example, a wavelength range 110
A light-emitting medium that emits ultraviolet light Q of nm to 400 nm is enclosed. The components of the light emitting medium are, for example, Ar, K
The gas contains one or more of r, Xe, F ₂ , He, D ₂ , Ne, CF ₄ , and Cl.

A punching plate 22 also serving as an electrode is arranged from the translucent container 21 to the center of the airtight container 1. The punching plate 22 is formed of a metal material and has a plurality of holes.

Then, a high frequency is applied between the punching plate 22 and the inner wall of the airtight container 1 to excite a light emitting medium sealed in the translucent container 21 to emit light. A power supply (RF) 23 is connected.

Next, the operation of the device configured as described above will be described.

The microwave MW having a frequency of 2.45 GHz generated from the microwave oscillator 4 propagates in the TE ₁₀ mode through the rectangular microwave waveguide 3, passes through the microwave introduction window 2 through the slit 3 a, and passes through the plasma generation chamber. 7 is introduced.

At the same time, a process gas is introduced into the plasma generation chamber 7 from the process gas supply source 5.

When the microwave MW and the process gas are introduced into the hermetic container 1 in this manner, the microwave MW
Forms a standing wave between the microwave introduction window 2 and the punching plate 6 to turn the process gas into plasma.

The radicals (active species) of the process gas activated in the plasma pass through the punching plate 6.

On the other hand, when high-frequency power is applied between the punching plate 22 and the inner wall of the hermetic container 1 from the high-frequency power source 23, the light-emitting medium sealed in the translucent container 21 is excited, and the wavelength range is 110 nm. UV light Q of ~ 400nm
Radiate.

The ultraviolet light Q prevents radicals of the process gas passing through the punching plate 6 from being deactivated, and radicalizes neutral atoms.

As described above, the deactivation of the radicals in the process gas is prevented, and the neutral atoms are radicalized, thereby promoting the radical generation and improving the uniformity of the radical density distribution.

These radicals are converted into the object 10
And the etching or ashing process is performed. The gas after this process is supplied to the exhaust device 11
Exhausted by

As described above, in the first embodiment, since the light emitting device 20 for radiating the ultraviolet light Q into the plasma to radicalize the neutral atoms is provided on the wall surface side of the hermetic container 1, the process The deactivation of gas radicals can be prevented, and neutral atoms can be converted into radicals, which promotes radical generation and improves the uniformity of radical density.

As a result, the amount of radicals reaching the object 10 can be increased, the speed of the etching or ashing process can be increased, and a process plasma having a substantially uniform radical density distribution can be obtained. That is, even if the microwave power per unit area is the same,
Since the radical amount is increased and the radical density distribution can be made uniform, the processing time required for the process can be further reduced.

For example, as shown in FIG. 3, a plasma having a distribution in which the radical density distribution in the plasma can be regarded as a uniform sheet within ± 10% can be generated, and after passing through the punching plate 6, For example, process processing can be realized under extremely high uniformity conditions, such as a radical density distribution of ± 5% on a large-area liquid crystal substrate.

On the other hand, the aperture ratio of the punching plate 6 is
As described above, the central portion is formed low (for example, 〜１０10%) and becomes high toward the peripheral portion (for example, ３０30%, 程度 60%). However, if the device of the present invention is used, as shown in FIG. Since the radical density distribution can be made high and almost uniform,
The opening ratio at the center is equal to the opening ratio at the periphery, for example, 60%.
Can be increased.

Further, the diffusion distance can be shortened from the conventional 5 cm to 1 cm, and as a result, the processing speed can be improved about 100 times.

(2) Hereinafter, a second embodiment of the present invention will be described with reference to the drawings. The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 4 is a configuration diagram of a plasma processing apparatus.

On the wall surface side of the process chamber 8 in the hermetic container 1, there is provided a light emitting device 30 for emitting ultraviolet light Q into plasma to radicalize neutral atoms.

FIG. 5 is an enlarged configuration diagram of the light emitting device 30.

A metal punching plate 31 is arranged on the wall surface side of the process chamber 8 at a predetermined distance from the wall surface, and is disposed above the wall surface and the punching plate 31, for example, in a wavelength range of several nm. A nozzle 32 for ejecting a light-emitting medium that emits ultraviolet light Q of up to 400 nm is arranged.

The luminous medium supply source 33 for supplying the luminous medium is connected to the nozzle 32. The components of the light emitting medium are, for example, Ar, Kr, Xe, F ₂ , He, D ₂ , N
It is sufficient that at least one of the gases e, CF ₄ , and Cl is contained.

A high-frequency power supply is applied between the punching plate 31 and the inner wall of the hermetic container 1 to excite a luminous medium flowing between the punching plate 31 and the inner wall of the hermetic container 1 to emit light. (RF) 23 is connected.

Next, the operation of the device configured as described above will be described.

The microwave MW having a frequency of 2.45 GHz generated from the microwave oscillator 4 propagates in the TE ₁₀ mode through the microwave waveguide 3, passes through the microwave introduction window 2 through the slit 3 a, and enters the plasma generation chamber 7. When the process gas is introduced and the process gas from the process gas supply source 5 is introduced into the plasma generation chamber 7, the microwave MW forms a standing wave between the microwave introduction window 2 and the punching plate 6. Then, the process gas is turned into plasma.

The radicals of the process gas activated in the plasma pass through the punching plate 6.

On the other hand, from the luminous medium supply source 33 to the nozzle 32
When the luminous medium is supplied to the nozzle 32, the luminous medium is ejected from the nozzle 32, and the punching plate 31 and the airtight container 1
Flows from above to below between the inner walls of the.

When high-frequency power is applied between the punching plate 31 and the inner wall of the hermetic container 1 at the same time, the luminous medium flowing between the punching plate 31 and the inner wall of the hermetic container 1 is excited. Then, ultraviolet light Q having a high photon energy in a wavelength range of several nm to 400 nm is emitted.

The ultraviolet light Q prevents radicals of the process gas passing through the punching plate 6 from being deactivated, and radicalizes neutral atoms.

As described above, the deactivation of the radical of the process gas is prevented, and the neutral atom is radicalized,
Radical generation is promoted, and the uniformity of radical density is improved.

These radicals are converted into the object 10
And the etching or ashing process is performed. The gas after this process is supplied to the exhaust device 11
Exhausted by

As described above, according to the second embodiment, similarly to the first embodiment, the deactivation of radicals of the process gas can be prevented, and the neutral atoms can be radicalized. Radical generation can be promoted to improve the uniformity of radical density.

As a result, the amount of radicals reaching the object 10 can be increased, the speed of the etching or ashing process can be increased, and a process plasma having a substantially uniform radical density distribution can be obtained. As shown in FIG. 3, the radical density distribution in the plasma is ±
A uniform sheet-like plasma within 10% can be generated, and after passing through the punching plate 6, the object 1
Assuming that the radical density distribution on a large-area liquid crystal substrate is 0, for example, the process can be realized under the condition of extremely high uniformity of ± 5%.

On the other hand, the aperture ratio of the punching plate 6 is
As described above, the central portion is formed low (for example, 〜１０10%) and becomes high toward the peripheral portion (for example, ３０30% or ６０60%). For example, it can be increased to 60%, which is equal to the aperture ratio of the peripheral portion.

Further, the diffusion distance can be reduced from the conventional 5 cm to 1 cm, and as a result, the processing speed can be improved about 100 times.

Further, since the translucent container 21 is not provided as in the first embodiment, the wavelength is not limited by the window material, and the ultraviolet light Q in the wavelength range of several nm to 400 nm can be emitted. No suitable window material at the level, wavelength 11
Vacuum ultraviolet light of 0 nm or less and light in the X-ray region can also be used positively.

In addition, since light having a high photon energy can be used, radicals can be generated more positively than in the first embodiment, and the radical density at the periphery of the hermetic container 1 where the radical density decreases can be increased. A more uniform radical density distribution suitable for plasma generation can be obtained.

When the luminous medium is ejected from the nozzle 32,
The same effect as described above can be obtained even if the luminous medium is ejected not only from above the punching plate 31 and the inner wall of the airtight container 1 but also from the intermediate position as shown in the position A in FIG.

In the first and second embodiments, the case where the light emitting devices 20 and 30 are arranged on the process processing chamber 8 side has been described.
0 and 30 may be arranged corresponding to a portion having a low radical density distribution. For example, as shown in FIG. 6A, the microwave introduction window 2 in the process processing chamber 8 as shown in FIG.
And the punching plate 6 or between the microwave introduction window 2 and the punching plate 6 as shown in FIG.

The arrangement of the light emitting devices 20 and 30 is as follows.
It is arranged on the entire inner wall of the vacuum vessel 1 or the vacuum vessel 1
May be arranged on a part of the inner wall of the vehicle.

(3) Hereinafter, a third embodiment of the present invention will be described with reference to the drawings. The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 7 is a configuration diagram of a plasma processing apparatus.

On the wall surface side of the hermetic container 1, a light emitting device 4 that emits ultraviolet light Q into plasma to radicalize neutral atoms is formed.
0 is provided.

That is, a light-transmitting container 41 made of quartz is provided on the wall surface side of the airtight container 1 so as to be in contact with the wall surface, and the light-transmitting container 41 is provided outside the airtight container 1. A luminescent medium supply 42 is in communication.

The light-emitting medium supply source 42 supplies the light-transmitting container 4
The type of the luminescent medium supplied to 1 changes according to the etching or ashing process. For example, in the case of etching, when the process gas is CF ₄ gas, the excitation threshold is 7.8 eV (wavelength 160 nm). There is a gas lighter than the rare gas Kr.

In the ashing, ozone is generated using oxygen gas as a raw material as a process gas.
Light near 80 nm is appropriate, and the use of Xe gas is appropriate.

An electrode 43 is provided so as to be in close contact with the center of the airtight container 1 in the light transmitting container 41.

A high frequency power supply (RF) 2 for applying a high frequency to excite the rare gas Kr or Xe gas supplied in the hermetic container 1 to emit light between the electrode 43 and the hermetic container 1.
3 are connected.

Next, the operation of the device configured as described above will be described.

The microwave MW having a frequency of 2.45 GHz generated from the microwave oscillator 4 propagates in the TE ₁₀ mode by the microwave waveguide 3, passes through the microwave introduction window 2, and is introduced into the airtight container 1. When the process gas from the process gas supply source 5 is introduced into the hermetic container 1 at the same time, the process gas is turned into plasma by the microwave MW.

On the other hand, a rare gas is supplied from the light emitting medium supply source 42 to the translucent container 41 and circulated.

Then, high frequency power is applied between the electrode 43 and the airtight container 1 from the high frequency power source 23,
The rare gas flowing in the translucent container 41 is excited, and ultraviolet light Q is emitted.

In this case, in the etching, when the process gas is CF ₄ gas, the rare gas Kr is supplied to the translucent container 41 and the wavelength 160 nm is excited by the high frequency power.
Is emitted into the plasma.

In the ashing process, ozone is generated from oxygen gas as a process gas, so that the rare gas Xe is supplied to the translucent container 41 and the ultraviolet light Q having a wavelength of 180 nm is excited by the high-frequency power. Emitted into the plasma.

The ultraviolet light Q prevents deactivation of radicals in the process gas, radicalizes neutral atoms, promotes radical generation, and improves the uniformity of radical density.

These radicals are converted into the object 10
And the etching or ashing process is performed. The gas after this process is supplied to the exhaust device 11
Exhausted by

As described above, according to the third embodiment, as in the first embodiment, the deactivation of radicals of the process gas can be prevented, and the neutral atoms can be radicalized. Radical generation can be promoted to improve the uniformity of radical density.

As a result, the amount of radicals reaching the object 10 can be increased, the speed of the etching or ashing process can be increased, and a process plasma having a substantially uniform radical density distribution can be obtained. As shown in FIG. 3, the radical density distribution in the plasma is ±
A uniform sheet-like plasma can be generated within 10%, and the process density is extremely high as ± 5% on a large-area liquid crystal substrate, for example, as the object 10 to be processed. it can.

(4) Hereinafter, a fourth embodiment of the present invention will be described with reference to the drawings. The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 8 is a configuration diagram of a plasma processing apparatus, where FIG. 8A is a configuration diagram viewed from above, and FIG. 8B is an overall configuration diagram.

Microwave introduction window 2 in airtight container 1
Four cylindrical light-transmissive containers 50 to 53 are arranged between the substrate and the punching plate 6 and around the opening 3 a of the microwave waveguide 3. These translucent containers 50 to 53 may have a rectangular parallelepiped shape. That is,
These translucent containers 50 to 53 are arranged corresponding to portions having a low radical density distribution.

These translucent containers 50 to 53 are made of, for example, quartz, CaF ₂ , MgF _2, etc., which transmit ultraviolet light Q in a wavelength range of 110 nm to 400 nm, and have therein gas components of a luminous medium. For example, Ar, Kr,
One or more of each gas of Xe, F ₂ , He, D ₂ , Ne, CF ₄ , and Cl is contained.

Therefore, when the microwave MW existing in the airtight container 1 is added to the translucent containers 50 to 53, the microwave MW excites the light emitting medium and emits ultraviolet light Q. I have.

Next, the operation of the device configured as described above will be described.

The microwave MW having a frequency of 2.45 GHz generated from the microwave oscillator 4 propagates in the TE ₁₀ mode through the rectangular microwave waveguide 3, passes through the microwave introduction window 2, and is introduced into the plasma generation chamber 7. When the process gas is introduced from the process gas supply source 5 into the plasma generation chamber 7 at the same time, the microwave MW forms a standing wave between the microwave introduction window 2 and the punching plate 6, and The use gas is turned into plasma.

The radicals generated from the process gas activated in the plasma pass through the punching plate 6.

As described above, the microwave MW is placed in the airtight container 1.
Is introduced, the light emitting medium sealed in the four translucent containers 50 to 53 is excited by the microwave MW existing in the hermetic container 1, and the ultraviolet region having a high photon energy in a wavelength region of 110 nm to 400 nm. Light Q is emitted.

The ultraviolet light Q is applied to the punching plate 6
In addition to preventing the deactivation of radicals of the process gas that has passed through, the neutralizing atom is radicalized.

Then, these radicals are converted into the object 10
And the etching or ashing process is performed. The gas after this process is supplied to the exhaust device 11
Exhausted by

As described above, in the fourth embodiment, the four cylindrical light-transmitting containers 50 to 53 in which the light-emitting medium which emits light when excited by the microwave MW existing in the airtight container 1 are enclosed. As in the first embodiment, the deactivation of radicals in the process gas can be prevented, the neutral atoms can be converted into radicals, radical generation is promoted, and the uniformity of radical density is improved. Can be improved.

As a result, the amount of radicals reaching the object 10 can be increased, the speed of the etching or ashing process can be increased, and process plasma having a substantially uniform radical density distribution can be obtained. As shown in FIG. 9, the radical density distribution in the plasma can be generated as a uniform sheet-like plasma, and after passing through the punching plate 6, the radical density distribution on a large-area liquid crystal substrate as the object to be processed 10 is, for example, , ± 5%.

On the other hand, the aperture ratio of the punching plate 6 is
As described above, the central portion was low and formed higher toward the peripheral portion. However, the use of the apparatus of the present invention makes it possible to make the radical density distribution high and substantially uniform as shown in FIG.
The opening ratio at the center is equal to the opening ratio at the periphery, for example, 60%.
Can be increased by.

Also, the diffusion distance can be reduced from 5 cm to 1 cm in the prior art, and as a result, the processing speed can be improved about 100 times.

Further, since the light emitting medium enclosed in the four translucent containers 50 to 53 is excited and emitted by the microwave MW, it is not necessary to provide a separate excitation device for exciting the light emitting medium.

(5) Hereinafter, a fifth embodiment of the present invention will be described with reference to the drawings. The same parts as those in FIG. 8 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 10 is a configuration diagram of a plasma processing apparatus, wherein FIG. 10A is a configuration diagram viewed from above, and FIG. 10B is an overall configuration diagram.

Explaining the difference of the present apparatus from the fourth embodiment, four cylindrical light-transmitting containers 50 to 53 are provided on the lower surface side of the microwave introduction window 2, that is, on the inner side of the airtight container 2. In addition, they are arranged corresponding to portions having a low radical density distribution.

The light-transmitting containers 50 to 53 correspond to the fourth container.
As in the embodiment, for example, a wavelength range of 110 nm to 40 nm
Quartz, CaF ₂ , MgF that transmits 0 nm ultraviolet light Q
_{2 and the} like, and gas components such as Ar, Kr, Xe, F ₂ , He, D ₂ , Ne,
At least one of CF ₄ and Cl gases is contained.

Next, the operation of the device configured as described above will be described.

The microwave MW generated from the microwave oscillator 4 propagates through the microwave waveguide 3, passes through the microwave introduction window 2, and is introduced into the plasma generation chamber 7. When the gas is introduced, the microwave MW forms a standing wave between the microwave introduction window 2 and the punching plate 6 to turn the process gas into plasma.

On the other hand, when the microwave MW passes through the microwave introduction window 2, the light-emitting medium sealed in each of the translucent containers 50 to 53 arranged in the microwave introduction window 2 at this time, Ultraviolet light Q excited by MW and having a high photon energy of 110 nm to 400 nm
Is emitted.

The ultraviolet light Q prevents radicals in the process gas from being deactivated and radicalizes neutral atoms in the plasma.

The radicals of the process gas activated in the plasma pass through the punching plate 6 and reach the object to be processed 10, where etching or ashing process is performed. The gas after this process is exhausted by the exhaust device 11.

As described above, according to the fifth embodiment, as in the fourth embodiment, the deactivation of radicals in the process gas can be prevented and the neutral atoms can be radicalized. Needless to say, the effect of promoting the radical generation and improving the uniformity of the radical density can be obtained.

(6) Hereinafter, a sixth embodiment of the present invention will be described with reference to the drawings. The same parts as those in FIG. 8 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 11 is a configuration diagram of a plasma processing apparatus. FIG. 11 (a) is a configuration diagram viewed from above, and FIG. 11 (b) is an overall configuration diagram.

Explaining the difference between the fourth embodiment and the fourth embodiment of the present apparatus, the four cylindrical light-transmitting containers 50 to 53 are arranged such that the microwave introduction window 2 is at a predetermined distance from the top of the airtight container 1. , And are arranged on the upper surface of the microwave introduction window 2 and corresponding to a portion where the radical density distribution is low.

The light-transmitting containers 50 to 53 correspond to the fourth containers.
As in the embodiment, for example, a wavelength range of 110 nm to 40 nm
Quartz, CaF ₂ , MgF that transmits 0 nm ultraviolet light Q
_{2 and the} like, and gas components such as Ar, Kr, Xe, F ₂ , He, D ₂ , Ne,
At least one of CF ₄ and Cl gases is contained.

Next, the operation of the device configured as described above will be described.

The microwave MW generated from the microwave oscillator 4 propagates through the microwave waveguide 3, passes through the microwave introduction window 2, and is introduced into the plasma generation chamber 7. When the gas is introduced, the microwave MW forms a standing wave between the microwave introduction window 2 and the punching plate 6 to turn the process gas into plasma.

On the other hand, when the microwave MW is guided into the airtight container 1, the light emitting medium sealed in each of the translucent containers 50 to 53 at this time is excited by the microwave MW existing in the airtight container 1. Then, ultraviolet light Q having a high photon energy in a wavelength range of 110 nm to 400 nm is emitted.

The ultraviolet light Q passes through the microwave introduction window 2 and is irradiated into the plasma to prevent the deactivation of radicals of the process gas and to radicalize neutral atoms in the plasma.

Then, the radicals of the process gas activated in the plasma pass through the punching plate 6 and reach the object to be processed 10, where etching or ashing process is performed. The gas after this process is exhausted by the exhaust device 11.

As described above, according to the sixth embodiment, similarly to the fourth embodiment, the deactivation of radicals of the process gas can be prevented and the neutral atoms can be radicalized. Needless to say, the effect of promoting the radical generation and improving the uniformity of the radical density can be obtained.

(7) Hereinafter, a seventh embodiment of the present invention will be described with reference to the drawings. The same parts as those in FIG. 8 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIGS. 12A and 12B are configuration diagrams of a plasma processing apparatus. FIG. 12A is a configuration diagram viewed from above, and FIG. 12B is an overall configuration diagram.

The difference of this apparatus from the fourth embodiment will be described. Two microwave introduction windows 55 and 56 are arranged at a predetermined interval in the upper part of the airtight container 1, and at the center. It is supported by a rod-shaped supporting dielectric 57.

Between these microwave introduction windows 55 and 56, sealed translucent containers 58 to 60 are formed at four places, and within these translucent containers 58 to 60, for example, the wavelength range 11.
Quartz that transmits ultraviolet light Q of 0 nm to 400 nm, Ca
Formed of F ₂ , MgF _2, etc.
As a gas component, for example, Ar, Kr, Xe, F ₂ , He,
One or more of each gas of D ₂ , Ne, CF ₄ , and Cl is contained.

Next, the operation of the device configured as described above will be described.

The microwave MW generated from the microwave oscillator 4 propagates through the microwave waveguide 3, passes through the microwave introduction window 2, and is introduced into the plasma generation chamber 7. When the gas is introduced, the microwave MW forms a standing wave between the microwave introduction window 2 and the punching plate 6 to turn the process gas into plasma.

On the other hand, when the microwave MW is guided into the airtight container 1, the light emitting medium sealed in each of the translucent containers 58 to 61 at this time is excited by the microwave MW existing in the airtight container 1. Then, ultraviolet light Q having a high photon energy in a wavelength range of 110 nm to 400 nm is emitted.

The ultraviolet light Q is applied to the microwave introduction window 56.
And is irradiated into the plasma to prevent deactivation of radicals in the process gas and to radicalize neutral atoms in the plasma.

Then, the radicals of the process gas activated in the plasma pass through the punching plate 6 and reach the object to be processed 10, and the etching or ashing process is performed. The gas after this process is exhausted by the exhaust device 11.

As described above, according to the seventh embodiment, similarly to the fourth embodiment, the deactivation of radicals of the process gas can be prevented, and the neutral atoms can be radicalized. Needless to say, the effect of promoting the radical generation and improving the uniformity of the radical density can be obtained.

(8) Hereinafter, an eighth embodiment of the present invention will be described with reference to the drawings. The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 13 is a configuration diagram of a plasma processing apparatus.

On the entire lower surface of the punching plate 6, a punching plate-shaped translucent container 70 made of quartz, CaF ₂ , MgF ₂ or the like is arranged. The translucent container 70 in the form of a punching plate is formed in substantially the same shape as the punching plate 6 as shown in FIG. 14, for example, and has a structure that does not hinder the progress of radicals from the process gas.

The light-transmitting container 70 in the form of a punching plate
Inside, for example, quartz, CaF ₂ , MgF ₂ or the like that transmits ultraviolet light Q in a wavelength range of 110 nm to 400 nm is formed, and inside thereof, for example, Ar, Kr, Xe, F ₂ as a gas component of a light emitting medium. , He, D ₂ , Ne, CF
_4. One or more types of each gas of Cl are contained.

On the other hand, a stage 7 serving also as an RF electrode is provided below the airtight container 1 via a stage shaft 71 made of an insulating material.
2 are provided.

The stage 72 and the punching plate 6
Between the stage 72 and the punching plate 6 from the high-frequency power source 73, and the luminous medium sealed in the perforated plate-shaped translucent container 70 by high-frequency power applied between the stage 72 and the punching plate 6. Is excited,
It emits light. Note that the connection from the high-frequency power supply 73 to the stage 72 is made through an insulating connector 74.

Next, the operation of the device configured as described above will be described.

The microwave MW generated from the microwave oscillator 4 propagates through the microwave waveguide 3, passes through the microwave introduction window 2, and is introduced into the plasma generation chamber 7. When the gas is introduced, the microwave MW forms a standing wave between the microwave introduction window 2 and the punching plate 6 to turn the process gas into plasma.

Then, the radicals converted into plasma pass through the punching plate 6 and reach the object 10 to be processed.

On the other hand, when high-frequency power is applied between the stage 72 and the punching plate 6 from the high-frequency power supply 73, the high-frequency power excites the light-emitting medium sealed in the transmissive punching metal container 70. For example, a wavelength region of high photon energy of 110 nm to 40 nm
It emits ultraviolet light Q of 0 nm.

The ultraviolet light Q prevents radicals of the process gas passing through the punching plate 6 from being deactivated and radicals neutral atoms.

As described above, the deactivation of the radicals of the process gas is prevented, and the neutral atoms are radicalized, whereby
Radical generation is promoted, and the uniformity of radical density is improved.

Then, these radicals are converted into the object 10 to be treated.
And the etching or ashing process is performed. The gas after this process is supplied to the exhaust device 11
Exhausted by

As described above, in the eighth embodiment, the punching plate-shaped translucent container 70 formed in substantially the same shape as the punching plate 6 and enclosing the luminous medium is formed on the entire lower surface of the punching plate 6. The arrangement can prevent the deactivation of radicals in the process gas, and can also neutralize neutral atoms, promote radical generation, and improve the uniformity of radical density.

As a result, as shown in FIG. 15, the amount of radicals reaching the object to be processed 10 can be increased, the speed of the etching or ashing process can be increased, and a process plasma having a substantially uniform radical density distribution can be obtained. It is possible.

Although the aperture ratio of the punching plate 6 is low at the central portion and high toward the peripheral portion as described above, the radical density distribution can be made high and substantially uniform by using the apparatus of the present invention. Therefore, the aperture ratio at the center can be increased to, for example, 60%, which is equal to the aperture ratio at the peripheral portion.

(9) Hereinafter, a ninth embodiment of the present invention will be described with reference to the drawings. The same parts as those in FIG. 13 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 16 is a configuration diagram of a plasma processing apparatus.

On the entire lower surface of the punching plate 6, a donut-shaped translucent container 75 made of quartz, CaF ₂ , MgF ₂ or the like is formed.

In the donut-shaped translucent container 75,
Such as quartz which transmits ultraviolet light Q wavelength range 110Nm～400nm, formed from such CaF _2, MgF _2, and in the interior thereof, for example, A as the gas component in the luminescent medium
r, Kr, Xe, F ₂ , He, D ₂ , Ne, CF ₄ , C
1 includes at least one kind of each gas.

In the donut-shaped translucent container 75, the enclosed light-emitting medium is excited by high-frequency power applied between the stage 72 and the punching plate 6 from the high-frequency power supply 73, and a wavelength region where photon energy is high. 1
It emits ultraviolet light Q of 10 nm to 400 nm.

Next, the operation of the device configured as described above will be described.

The microwave MW generated from the microwave oscillator 4 propagates through the microwave waveguide 3, passes through the microwave introduction window 2, and is introduced into the plasma generation chamber 7. When the gas is introduced, the microwave MW forms a standing wave between the microwave introduction window 2 and the punching plate 6 to turn the process gas into plasma.

Then, the radicalized plasma passes through the punching plate 6 and reaches the object 10 to be processed.

On the other hand, when high-frequency power is applied between the stage 72 and the punching plate 6 from the high-frequency power supply 73, the high-frequency power causes the doughnut-shaped translucent container 75.
The light-emitting medium sealed in the inside is excited, and emits, for example, ultraviolet light Q in a wavelength range of 110 nm to 400 nm having a high photon energy.

The ultraviolet light Q prevents radicals of the process gas passing through the punching plate 6 from being deactivated and radicalizes neutral atoms.

As described above, the deactivation of the radical of the process gas is prevented, and the neutral atom is radicalized,
Radical generation is promoted, and the uniformity of radical density is improved.

Then, these radicals are converted into the object 10
And the etching or ashing process is performed. The gas after this process is supplied to the exhaust device 11
Exhausted by

As described above, according to the ninth embodiment, in addition to the effects of the eighth embodiment, the deactivation of radicals in the process gas can be prevented, and the neutral atoms can be radicalized. Needless to say, the effect of promoting the radical generation and improving the uniformity of the radical density can be obtained.

In the eighth and ninth embodiments, the perforated plate-shaped light-transmitting container 70 or the donut-shaped light-transmitting container 75 is arranged on the entire lower surface of the punching plate 6, but is not limited thereto. Any shape that does not hinder progress may be used.

(10) Hereinafter, a tenth embodiment of the present invention will be described with reference to the drawings.

FIG. 17 is an overall configuration diagram of a plasma processing apparatus. FIG. 17A is a configuration diagram viewed from above, and FIG. 17B is a configuration diagram viewed from a side.

The airtight container 80 is formed in a cubic hollow. A microwave introduction window 81 made of, for example, alumina shellac or quartz is provided on the upper portion of the airtight container 80.
Two microwave oscillators 84 and 85 that oscillate a microwave MW of, for example, a frequency of 2.45 GHz are connected via the rectangular microwave waveguides 82 and 83.

The microwave waveguides 82 and 83 are connected to the microwave introduction window 81 at the microwave radiating apertures (hereinafter, referred to as slits) 82 respectively.
a, 83 a are formed along the longitudinal direction of the microwave waveguides 82, 83.

A process gas supply source 86 for supplying a process gas is connected to the side surface of the airtight container 1.

[0177] A punching plate 87 is provided inside the airtight container 80, and a plasma generation chamber 88 and a process processing chamber 89 are formed.

A stage 90 is provided in the process chamber 89.
The object to be processed 10 such as a liquid crystal substrate is placed on the stage 90. Also, the processing chamber 8
The lower part of 9 is connected to an exhaust device 11 for exhausting the gas after the process.

On the lower surface of the microwave introduction window 81 (inside the airtight container 80) of such an airtight container 80, a cylindrical or rectangular parallelepiped light-transmitting member made of quartz, CaF ₂ , MgF ₂ or the like is formed. A container 91 is provided.

FIG. 18 is an enlarged layout view of the cylindrical light-transmitting container 91. The cylindrical light-transmitting container 91 is provided between the slits 82a and 83a and between the slits 82a and 83a.
3a are arranged along the forming direction.

In the cylindrical light-transmitting container 91, for example, Ar, Kr, Xe, F ₂ , H
e, D ₂ , Ne, CF ₄ , and Cl.
It is excited by W and emits ultraviolet light Q in a wavelength range of 110 nm to 400 nm.

Next, the operation of the device configured as described above will be described.

[0183] Microwave MW of 2.45GHz frequency generated by the respective microwave oscillators 84 and 85, propagate in TE ₁₀ mode by each microwave waveguide 82, the microwave introducing window from the slits 82a, 83a 2
And is introduced into the plasma generation chamber 88.

At the same time, a process gas is introduced into the plasma generation chamber 88 from a process gas supply source 86.

When the microwave MW and the process gas are introduced into the hermetic container 80 as described above, the microwave MW
Forms a standing wave between the microwave introduction window 81 and the punching plate 87 to turn the process gas into plasma.

On the other hand, when the microwave MW is introduced into the hermetic container 80, the light emitting medium sealed in the cylindrical translucent container 91 is excited, and ultraviolet light having a high photon energy in a wavelength range of 110 nm to 400 nm is emitted. Q is emitted.

This ultraviolet light Q prevents radicals in the process gas from being deactivated and radicalizes neutral atoms.

As described above, the deactivation of the radicals of the process gas is prevented, and the neutral atoms are radicalized.
Radical generation is promoted, and the uniformity of radical density is improved.

That is, two microwave waveguides 82,
The radical density distribution in the hermetic container 80 to which the connection 83 is connected is usually made by each slit 82a, as shown in FIG.
It decreases at the portion corresponding to the interval 83a.

However, as in the apparatus of the present invention, the light-emitting medium enclosed in the cylindrical or rectangular parallelepiped light-transmitting container 911 disposed between the slits 82a and 83a is excited to emit ultraviolet light Q, and the process is performed. Since radicals in the working gas are prevented from being deactivated and neutral atoms are radicalized, the radical density distribution is uniformed within a range of ± 10% as shown in FIG.

Then, these radicals pass through the punching plate 87, reach the object to be processed 10, and are subjected to an etching or ashing process. The gas after this process is exhausted by the exhaust device 11.

As described above, in the tenth embodiment, the microwave MW is provided between the slits 82a and 83a.
Since the cylindrical translucent container 91 that emits ultraviolet light Q by the excitation of is disposed, the structure in which the two microwave waveguides 82 and 83 are connected can prevent the radicals of the process gas from being deactivated. Neutral atoms can be radicalized, radical generation can be promoted, and uniformity of radical density can be improved.

As a result, the amount of radicals reaching the object to be processed 10 can be increased, the processing speed of etching or ashing can be increased, and a process plasma having a substantially uniform radical density distribution can be obtained. 2
0, the radical density distribution in the plasma is ± 10
%, Which can be regarded as a uniform sheet-like plasma, and after passing through the punching plate 6, the radical density distribution on a large-area liquid crystal substrate as the object to be processed 10 is ± 5%. Process processing can be realized under extremely uniform conditions.

On the other hand, the aperture ratio of the punching plate 6 is
It is possible to create a portion having a high radical density as a reference, instead of creating a portion having a low radical density as a reference. As a result, the amount of radicals reaching the object to be processed 10 can be increased, and the speed of etching or ashing process can be increased. Can.

(11) Hereinafter, an eleventh embodiment of the present invention will be described with reference to the drawings. The same parts as those in FIG. 17 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 21 is a main configuration diagram of a plasma processing apparatus.

On the lower surface of the microwave introduction window 81, quartz,
A cylindrical translucent container 100 formed in a cylindrical shape from CaF ₂ , MgF ₂ or the like is arranged.

The cylindrical translucent container 100 is provided between the slits 82a and 83a, and between the slits 82a and 83a.
3a are arranged along the forming direction.

A light-emitting medium is sealed in the cylindrical light-transmitting container 100. As a gas component of the light-emitting medium, for example, Ar, Kr, Xe, F ₂ , He, D ₂ , Ne, CF
_4. One or more types of each gas of Cl are contained.

[0200] A microwave power source 102 is connected to one end of the cylindrical translucent container 100 via a waveguide 101. As shown in FIG. 22, the microwave MW generated by the microwave power source 102 is introduced into the cylindrical or rectangular translucent container 100 by using a loop antenna 103 in the cylindrical translucent container 100 from the waveguide 101. This is done with the inserted configuration.

Therefore, when the microwave MW generated from the microwave power supply 102 propagates to the loop antenna 103, the electric field due to the microwave MW is applied from the loop antenna 103 to the light emitting medium in the cylindrical translucent container 100,
It excites the light emitting medium.

Note that another method of introducing the microwave MW is as follows.
As shown in FIG. 23, the waveguide 101 and the cylindrical translucent container 10
0 may be coaxially connected.

Next, the operation of the device configured as described above will be described.

[0204] Microwave MW of 2.45GHz frequency generated by the respective microwave oscillators 84 and 85, propagate in TE ₁₀ mode by each microwave waveguide 82, the microwave introducing window from the slits 82a, 83a 2
And is introduced into the plasma generation chamber 88.

At the same time, a process gas is introduced into the plasma generation chamber 88 from a process gas supply source 86.

When the microwave MW and the process gas are introduced into the hermetic container 80, the microwave MW
Forms a standing wave between the microwave introduction window 81 and the punching plate 87 to turn the process gas into plasma.

On the other hand, when the microwave MW generated from the microwave power source 102 propagates through the waveguide 101 to the loop antenna 103 in the cylindrical light-transmitting container 100, the electric field due to the microwave MW is transmitted from the loop antenna 103 to the cylindrical light-transmitting member. In addition to the light emitting medium in the conductive container 100, the light emitting medium is excited, and a wavelength region of high photon energy of 110 nm to
Ultraviolet light Q of 400 nm is emitted.

The ultraviolet light Q prevents radicals in the process gas from being deactivated and radicalizes neutral atoms.

As described above, the deactivation of the radicals of the process gas is prevented, and the neutral atoms are radicalized.
The radical density distribution was ± 10% as shown in FIG.
Within the range.

Then, these radicals pass through the punching plate 87, reach the object to be processed 10, and are subjected to an etching or ashing process. The gas after this process is exhausted by the exhaust device 11.

As described above, in the eleventh embodiment, as in the tenth embodiment, the deactivation of the radical of the process gas can be prevented, the neutral atom can be turned into a radical, and the radical can be changed. Needless to say, the effect of promoting the generation and improving the uniformity of the radical density can be obtained.

(12) Hereinafter, a twelfth embodiment of the present invention will be described with reference to the drawings. The same parts as those in FIG. 17 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 24 is a configuration diagram showing a main part of the plasma processing apparatus.

On the lower surface of the microwave introduction window 81, quartz,
Cylindrical translucent container 110 formed from such CaF _2, MgF ₂ in a cylindrical or rectangular parallelepiped shape is disposed.

The cylindrical translucent container 110 is provided between the slits 82a and 83a and between the slits 82a and 83a.
3a are arranged along the forming direction.

A light-emitting medium is sealed in the cylindrical light-transmitting container 110. As a gas component of the light-emitting medium, for example, Ar, Kr, Xe, F ₂ , He, D ₂ , Ne, CF
_4. One or more of each gas of Cl is contained.

As shown in FIG. 25, electrodes 111 and 112 are inserted into the cylindrical light-transmitting container 110 at both ends of the cylindrical light-transmitting container 110, respectively. DC power supply 113 is connected.

Therefore, when DC power is applied between the electrodes 111 and 112 from the DC power supply 113, glow discharge or creeping discharge occurs between the electrodes 111 and 112,
The light-emitting medium in the cylindrical translucent container 110 is excited.

Next, the operation of the device configured as described above will be described.

The microwaves MW having a frequency of 2.45 GHz generated by the microwave oscillators 84 and 85 respectively propagate through the microwave waveguides 82 and 83, and
2a and 83a pass through the microwave introduction window 2 and are introduced into the plasma generation chamber 88, and the plasma generation chamber 8
When a process gas is introduced into process gas 8 from process gas supply source 86, microwave MW is applied to microwave introduction window 81.
A standing wave is formed between the substrate and the punching plate 87, and the process gas is turned into plasma.

On the other hand, when DC power is applied between the electrodes 111 and 112 from the DC power supply 113, the DC power causes a glow discharge or a creeping discharge between the electrodes 111 and 112, and the glow discharge or the creeping discharge causes a cylindrical leakage. The light emitting medium in the optical container 110 is excited, and ultraviolet light Q in a wavelength region of 110 nm to 400 nm having high photon energy is emitted.

The ultraviolet light Q prevents the deactivation of radicals in the process gas, radicalizes neutral atoms, and makes the radical density distribution uniform within a range of ± 10% as shown in FIG. .

Then, these radicals pass through the punching plate 87 and reach the object 10 to be processed by etching or ashing. The gas after this process is exhausted by the exhaust device 11.

As described above, in the twelfth embodiment, as in the tenth embodiment, the deactivation of the radical of the process gas can be prevented, the neutral atom can be converted into a radical, and the radical can be reduced. Needless to say, the effect of promoting the generation and improving the uniformity of the radical density can be obtained.

(13) Hereinafter, a thirteenth embodiment of the present invention will be described with reference to the drawings. The same parts as those in FIG. 17 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 26 is a configuration diagram showing a main part of the plasma processing apparatus.

On the lower surface of the microwave introducing window 81, there is disposed a punching metal translucent container 120 having a property of reflecting high frequency and transmitting ultraviolet light Q, and having a cylindrical shape and having a plurality of holes formed therein. ing.

This perforated metal translucent container 120
Are arranged between the slits 82a and 83a and along the forming direction of the slits 82a and 83a.

A light emitting medium supply device 122 is connected to one end of the perforated metal translucent container 120 via a gas nozzle 121.

The luminous medium supply device 122 includes a luminous medium, such as A, in the perforated metal translucent container 120.
r, Kr, Xe, F ₂ , He, D ₂ , Ne, CF ₄ , C
1 has a function of supplying a gas containing one or more of them.

The microwave power supply 10 is connected to the other end of the perforated metal translucent container 120 through the waveguide 101.
2 are connected. Punched metal translucent container 12 for microwave MW generated by microwave power supply 102
0 is introduced into the waveguide 101 as shown in FIG.
This is performed as a configuration in which the loop antenna 103 is inserted into the translucent container 120.

Therefore, when the microwave MW generated from the microwave power supply 102 propagates to the loop antenna 103, an electric field due to the microwave MW is applied from the loop antenna 103 to the light emitting medium in the perforated metal translucent container 120, and the light emitting medium Is to be excited.

As another method of introducing the microwave MW, as shown in FIG. 28, a configuration in which the waveguide 101 and the perforated metal translucent container 120 are coaxially connected may be used.

Next, the operation of the device configured as described above will be described.

[0235] Microwave MW of 2.45GHz frequency generated by the respective microwave oscillators 84 and 85, propagate in TE ₁₀ mode by each microwave waveguide 82, the microwave introducing window from the slits 82a, 83a 2
And is introduced into the plasma generation chamber 88.

At the same time, a process gas is introduced into the plasma generation chamber 88 from a process gas supply source 86.

As described above, when the microwave MW and the process gas are introduced into the airtight container 80, the microwave MW
Forms a standing wave between the microwave introduction window 81 and the punching plate 87 to turn the process gas into plasma.

On the other hand, the perforated metal translucent container 120
The luminous medium is constantly supplied from the luminous medium supply device 122 into the inside.

In this state, when the microwave MW generated from the microwave power supply 102 propagates through the waveguide 101 to the loop antenna 103 in the perforated metal translucent container 120, the electric field due to the microwave MW is generated from the loop antenna 103. The ultraviolet light Q having a high photon energy in a wavelength range of 110 nm to 400 nm is added to the light emitting medium in the perforated metal translucent container 120 to excite the light emitting medium.
Is emitted.

The ultraviolet light Q prevents radicals in the process gas from being deactivated and radicalizes neutral atoms.

As described above, the deactivation of the radicals of the process gas is prevented, and the neutral atoms are radicalized.
The radical density distribution was ± 10% as shown in FIG.
Within the range.

Then, these radicals pass through the punching plate 87 and reach the object 10 to be processed by etching or ashing. The gas after this process is exhausted by the exhaust device 11.

As described above, in the thirteenth embodiment, as in the tenth embodiment, the deactivation of radicals of the process gas can be prevented, the neutral atoms can be turned into radicals, Needless to say, the effect of promoting the generation and improving the uniformity of the radical density can be obtained.

(14) Hereinafter, a fourteenth embodiment of the present invention will be described with reference to the drawings. The same parts as those in FIG. 17 are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 29 is a configuration diagram showing a main part of the plasma processing apparatus.

On the lower surface of the microwave introducing window 81, a container made of a light-transmitting punching metal which has a property of reflecting a high frequency and transmitting the ultraviolet light Q and having a cylindrical shape and a plurality of holes is provided. (Hereinafter, referred to as a perforated metal translucent container) 130 is disposed.

The perforated metal translucent container 130
Are arranged between the slits 82a and 83a and along the forming direction of the slits 82a and 83a.

[0248] A gas nozzle 131 is provided at the center of the perforated metal translucent container 130, and a light emitting medium supply device 122 is connected to the gas nozzle 131.

As shown in FIG. 30, the gas nozzle 131 is formed with three-way outlets 131a to 131c.
c points downward.

The luminous medium supply device 122 is, as described above,
For example, Ar, Kr, Xe, F ₂ , He, D ₂ , Ne, and C may be used as a light emitting medium
It has a function of supplying a gas containing one or more of each gas of F ₄ and Cl.

Also, as shown in FIG. 30, each electrode 11
1, 112, and these electrodes 111, 112
A DC power supply 113 is connected therebetween.

Therefore, when DC power is applied between the electrodes 111 and 112 from the DC power supply 113, a glow discharge or a creeping discharge occurs between the electrodes 111 and 112,
The light emitting medium flowing in the perforated metal translucent container 130 is excited.

The above-mentioned perforated metal translucent container 1
30 is provided on the lower surface of the microwave introduction window 81 as shown in FIG.
And the respective electrodes 111 and 112 may be provided.

Next, the operation of the device configured as described above will be described.

A microwave MW of a frequency of 2.45 GHz generated by each of the microwave oscillators 84 and 85 propagates to each of the microwave waveguides 82 and 83, and
a and 83a through the microwave introduction window 2 and into the plasma generation chamber 88, and when a process gas is introduced from the process gas supply source 86, the microwave M
W indicates a microwave introduction window 81 and a punching plate 87.
And a standing wave is formed between them, and the process gas is turned into plasma.

On the other hand, the punched metal translucent container 130
Inside, the luminous medium is constantly supplied from the luminous medium supply device 122, and each of the outlets 131 a to 131
c, it is ejected into the perforated metal translucent container 130 and flows.

In this state, when DC power is applied between the electrodes 111 and 112 from the DC power supply 113, these electrodes 11
Glow discharge or creeping discharge occurs between 1, 112, and the glow discharge or creeping discharge excites the luminous medium flowing in the perforated metal translucent container 130, so that ultraviolet light Q in a wavelength region of high photon energy of 110 nm to 400 nm is generated. Radiated.

The ultraviolet light Q prevents radicals in the process gas from being deactivated and radicalizes neutral atoms.

As described above, the deactivation of the radicals of the process gas is prevented, and the neutral atoms are radicalized, whereby
The radical density distribution was ± 10% as shown in FIG.
Within the range.

Then, these radicals pass through the punching plate 87 and reach the object 10 to be processed by etching or ashing. The gas after this process is exhausted by the exhaust device 11.

As described above, in the fourteenth embodiment, as in the tenth embodiment, the deactivation of the radical of the process gas can be prevented, the neutral atom can be turned into a radical, Needless to say, the effect of promoting the generation and improving the uniformity of the radical density can be obtained.

The present invention is not limited to the first to fourteenth embodiments but may be modified as follows.

For example, in the first to fourteenth embodiments, the rectangular microwave waveguide 3 or the hermetic container 1 such as a circle is used. May be used. In addition, the process gas is excited in various modes by the combination of the waveguide and the hermetic container. Regardless of the shape, the further away from the microwave introduction part, the lower the electron density and radical density. The light emitting means of the ultraviolet light Q may be arranged in the hermetic container 1 or the like.

In the tenth to fourteenth embodiments, two microwave oscillators 84 and 85 are used, but a plurality of slits are formed in the airtight container 1 using three or more microwave oscillators. The present invention may be applied to a device provided in a myoku wave introduction window.

Also, the present invention can be applied to an apparatus in which a plurality of slits are formed in a myroku wave introduction window using one microwave oscillator, for example. For example, as shown in FIG. 32, the microwave waveguide 3 is connected to one microwave oscillator 4, and the microwave waveguide 30 is folded back on the airtight container 1 to be disposed.
Two slits 140 and 141 are formed. A dummy load 143 is provided at the end of the microwave waveguide 3.

As described above, even in the configuration in which the two slits 140 and 141 are formed by one microwave oscillator, the ultraviolet light Q described in the first to fourteenth embodiments is applied between the slits 140 and 141. Light emitting means 143 for emitting light,
For example, Ar, Kr, Xe, F ₂ , He, D are used as a light emitting medium that emits ultraviolet light Q in a wavelength range of 110 nm to 400 nm.
_2, Ne, CF _4, Cl translucent container 21 or the like filled with gas containing one or more of the gases are arranged so as to emit light to excite the luminescent medium of the transparent envelope 21 It may be.

[0267]

As described in detail above, claims 1 to 5 of the present invention.
According to No. 15, it is possible to provide a plasma processing apparatus capable of increasing the radical density in the peripheral portion and improving the plasma use efficiency, and performing a large area and high speed process process.

According to claims 1 to 15 of the present invention, the amount of radicals reaching the object to be processed can be increased, the speed of the etching or ashing process can be increased, and the process can be performed under extremely uniform conditions. It is possible to provide a plasma processing apparatus capable of performing the processing and uniformly forming the aperture ratio of the punching plate with a high aperture ratio.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a first embodiment of a plasma processing apparatus according to the present invention.

FIG. 2 is a specific configuration diagram of a light emitting device in the device.

FIG. 3 is a diagram showing a radical density distribution in the same device.

FIG. 4 is a configuration diagram showing a second embodiment of the plasma processing apparatus according to the present invention.

FIG. 5 is a specific configuration diagram of a light emitting device in the device.

FIG. 6 illustrates an example of an arrangement of light-emitting devices.

FIG. 7 is a configuration diagram showing a third embodiment of the plasma processing apparatus according to the present invention.

FIG. 8 is a configuration diagram showing a fourth embodiment of the plasma processing apparatus according to the present invention.

FIG. 9 is a view showing a radical density distribution in the apparatus.

FIG. 10 shows a fifth example of the plasma processing apparatus according to the present invention.
FIG. 1 is a configuration diagram showing an embodiment.

FIG. 11 shows a sixth embodiment of the plasma processing apparatus according to the present invention.
FIG. 1 is a configuration diagram showing an embodiment.

FIG. 12 shows a seventh embodiment of the plasma processing apparatus according to the present invention.
FIG. 1 is a configuration diagram showing an embodiment.

FIG. 13 shows an eighth embodiment of the plasma processing apparatus according to the present invention.
FIG. 1 is a configuration diagram showing an embodiment.

FIG. 14 is an external view of a translucent container in the device.

FIG. 15 is a comparison diagram of a radical density distribution in the apparatus and a conventional radical density distribution.

FIG. 16 is a ninth plasma processing apparatus according to the present invention.
FIG. 1 is a configuration diagram showing an embodiment.

FIG. 17 shows a first example of the plasma processing apparatus according to the present invention.
FIG. 1 is a configuration diagram showing an embodiment of the present invention.

FIG. 18 is an enlarged layout view of a cylindrical translucent container in the device.

FIG. 19 is a radical density distribution diagram when a cylindrical translucent container is not used.

FIG. 20 is a radical density distribution diagram when a cylindrical translucent container is used in the apparatus.

FIG. 21 shows a first example of a plasma processing apparatus according to the present invention.
FIG. 2 is a configuration diagram showing a main part of the first embodiment.

FIG. 22 is a view showing a structure for introducing microwaves into a cylindrical translucent container.

FIG. 23 is a diagram showing a structure for introducing another microwave into a cylindrical light-transmitting container.

FIG. 24 shows a first example of a plasma processing apparatus according to the present invention.
FIG. 9 is a configuration diagram showing a main part of the second embodiment.

FIG. 25 is a diagram showing a cylindrical light-transmitting container provided with each electrode in the device.

FIG. 26 shows a first example of the plasma processing apparatus according to the present invention.
FIG. 13 is a configuration diagram illustrating a main part of a third embodiment.

FIG. 27 is a diagram showing a structure for introducing microwaves into a cylindrical translucent container.

FIG. 28 is a diagram showing a structure for introducing another microwave into a cylindrical light-transmitting container.

FIG. 29 is a first diagram illustrating a plasma processing apparatus according to the present invention.
The block diagram which shows the principal part of 4th Embodiment.

FIG. 30 is a configuration diagram of a perforated metal translucent container in the apparatus.

FIG. 31 is a configuration diagram of another punched metal translucent container in the same device.

FIG. 32 is a configuration diagram of a plasma processing apparatus in which a plurality of slits are formed.

FIG. 33 is a configuration diagram of a conventional plasma processing apparatus.

FIG. 34 is a view showing an aperture ratio of a punching plate.

FIG. 35 is a radical density distribution diagram.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Airtight container, 2 ... Microwave introduction window (dielectric window), 3 ... Microwave waveguide, 4 ... Microwave oscillator, 5 ... Process gas supply source, 6 ... Punching plate, 9, 72 ... Stage, 10 ... Object to be processed, 20: Light emitting device, 21: Translucent container, 22: Punching plate, 23, 73: High frequency power supply (RF), 30: Light emitting device, 31: Punching plate, 32: Nozzle, 40: Light emitting device, 50-53, 58-61: translucent container, 70: punching plate-shaped translucent container, 75: donut-shaped translucent container, 80: airtight container, 81: dielectric window, 82, 83 ... microwave waveguide Tube, 84, 85: microwave oscillator, 87: punching plate, 91, 100, 110: cylindrical translucent container, 101: waveguide, 102: microwave power supply, 103: Puantena, 111, 112 ... electrode, 113 ... DC power source, 120 ... punching metal translucent container, 121 ... nozzle, 122 ... light-emitting medium supply device, 130 ... punching metal transparent envelope.

Claims (14)

[Claims] 1. A plasma generating chamber and a process processing chamber are formed by arranging a plate having a plurality of holes in an airtight container, and a process gas is introduced into the plasma generating chamber and a microwave is guided. A plasma processing apparatus for converting the process gas into plasma, sending radicals generated in the plasma to the process chamber through the plate, and processing the object to be processed. A plasma processing apparatus, comprising: a light emitting unit that emits ultraviolet light for radicalizing atoms. 2. The light-emitting means includes a light-transmitting container in which a light-emitting medium that emits light by excitation is sealed, and an excitation means that excites the light-emitting medium in the light-transmitting container to emit light. 2. The plasma processing apparatus according to claim 1, comprising: 3. The light emitting means includes: a discharge electrode disposed opposite to an inner wall of the hermetic container; and a luminous medium supply source for flowing a luminous medium that emits light by excitation between the inner wall of the hermetic container and the discharge electrode. 2. The plasma processing apparatus according to claim 1, further comprising: an excitation unit configured to excite the luminous medium flowing between the inner wall of the hermetic container and the discharge electrode to emit light. 4. The plasma processing apparatus according to claim 1, wherein said light emitting means is formed by enclosing a light emitting medium which emits light by said microwave in a translucent container. 5. The light-emitting means, wherein a plurality of microwave introduction windows for introducing the microwave into the airtight container are arranged at predetermined intervals, and between these microwave introduction windows,
2. The plasma processing apparatus according to claim 1, wherein a light emitting medium which emits light by the microwave is sealed. 6. A light-transmitting container which is formed in substantially the same shape as the plate and in which a light-emitting medium which emits light by excitation is sealed, and which is sealed in the light-transmitting container. 2. The plasma processing apparatus according to claim 1, further comprising: an exciting unit that excites the light emitting medium to emit light. 7. A light-transmitting container, wherein the light-emitting means is annularly disposed on the side of the processing chamber of the plate, and in which a light-emitting medium which emits light by excitation is enclosed. 2. The plasma processing apparatus according to claim 1, further comprising: an exciting unit that excites the enclosed light emitting medium to emit light. 8. The light-emitting means includes: a light-transmitting container in which a light-emitting medium that emits light by excitation is sealed; and a light-emitting micro-tube that excites the light-emitting medium by introducing a microwave into the light-transmitting container. 2. The plasma processing apparatus according to claim 1, further comprising: a wave power supply. 9. A light-transmitting container in which a light-emitting medium that emits light by excitation is sealed, a pair of electrodes provided at a predetermined interval in the light-transmitting container, and a direct current between these electrodes. The plasma processing apparatus according to claim 1, further comprising: a DC power supply that supplies electric power to excite the light emitting medium. 10. The light-emitting means includes: a light-transmitting container that reflects a high-frequency wave and transmits light; a light-emitting medium supply source that supplies a light-emitting medium that emits light by excitation into the light-transmitting container; 2. The plasma processing apparatus according to claim 1, further comprising: a microwave power supply that excites the luminous medium by introducing a microwave into the conductive container. 11. The light emitting device according to claim 1, wherein the light emitting means is arranged corresponding to a portion having a low density of the radical based on a density distribution of the radical generated in the airtight container. Plasma processing equipment. 12. When the microwave radiating opening for radiating the microwave is formed in the hermetic container at an upper central portion of the hermetic container facing the object to be processed, the light-emitting means may include the airtight container. The plasma processing apparatus according to claim 11, wherein the plasma processing apparatus is disposed on a wall side of the container. 13. In the case where a plurality of microwave radiation openings for radiating the microwave are formed in the hermetic container above the hermetic container, the light emitting means may be provided between the respective microwave radiation openings. The plasma processing apparatus according to claim 11, wherein the plasma processing apparatus is disposed in each of the following. 14. The microwave introduction window, the microwave introduction window for introducing the microwave into the hermetic container and the plate, the microwave introduction window, or the microwave introduction window. The plasma processing apparatus according to claim 11, wherein the plasma processing apparatus is disposed at least at one position on a side of a window on which the microwave is incident.