JPH1149782A - Alkylsilane - Google Patents
AlkylsilaneInfo
- Publication number
- JPH1149782A JPH1149782A JP9219020A JP21902097A JPH1149782A JP H1149782 A JPH1149782 A JP H1149782A JP 9219020 A JP9219020 A JP 9219020A JP 21902097 A JP21902097 A JP 21902097A JP H1149782 A JPH1149782 A JP H1149782A
- Authority
- JP
- Japan
- Prior art keywords
- formula
- reaction
- dimethyl
- mol
- alkylsilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001343 alkyl silanes Chemical class 0.000 title claims description 14
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 11
- 125000005843 halogen group Chemical group 0.000 claims abstract description 9
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims abstract description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 36
- 239000000463 material Substances 0.000 abstract description 12
- -1 magnesium halide Chemical group 0.000 abstract description 11
- 239000012299 nitrogen atmosphere Substances 0.000 abstract description 8
- 229920000548 poly(silane) polymer Polymers 0.000 abstract description 8
- KMDMSCYLHPWQQX-UHFFFAOYSA-N trichloro(2,4-dimethylpentan-3-yl)silane Chemical compound CC(C)C(C(C)C)[Si](Cl)(Cl)Cl KMDMSCYLHPWQQX-UHFFFAOYSA-N 0.000 abstract description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 239000002798 polar solvent Substances 0.000 abstract description 4
- 239000002243 precursor Substances 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 4
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 abstract description 3
- 229910052744 lithium Inorganic materials 0.000 abstract description 3
- 239000011777 magnesium Substances 0.000 abstract description 3
- 229910052749 magnesium Inorganic materials 0.000 abstract description 3
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 2
- 239000007858 starting material Substances 0.000 abstract description 2
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 230000002349 favourable effect Effects 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 125000002524 organometallic group Chemical group 0.000 abstract 1
- LMBFAGIMSUYTBN-MPZNNTNKSA-N teixobactin Chemical compound C([C@H](C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CO)C(=O)N[C@H](CCC(N)=O)C(=O)N[C@H]([C@@H](C)CC)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CO)C(=O)N[C@H]1C(N[C@@H](C)C(=O)N[C@@H](C[C@@H]2NC(=N)NC2)C(=O)N[C@H](C(=O)O[C@H]1C)[C@@H](C)CC)=O)NC)C1=CC=CC=C1 LMBFAGIMSUYTBN-MPZNNTNKSA-N 0.000 abstract 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 39
- 238000000034 method Methods 0.000 description 14
- 150000001336 alkenes Chemical class 0.000 description 12
- 239000003999 initiator Substances 0.000 description 11
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 11
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 8
- 238000004821 distillation Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 150000002902 organometallic compounds Chemical class 0.000 description 7
- 238000009835 boiling Methods 0.000 description 6
- 238000001819 mass spectrum Methods 0.000 description 6
- 229910052987 metal hydride Inorganic materials 0.000 description 6
- 150000004681 metal hydrides Chemical class 0.000 description 6
- 239000012044 organic layer Substances 0.000 description 6
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 6
- 238000010992 reflux Methods 0.000 description 6
- CDDDRVNOHLVEED-UHFFFAOYSA-N 1-cyclohexyl-3-[1-[[1-(cyclohexylcarbamoylamino)cyclohexyl]diazenyl]cyclohexyl]urea Chemical compound C1CCCCC1(N=NC1(CCCCC1)NC(=O)NC1CCCCC1)NC(=O)NC1CCCCC1 CDDDRVNOHLVEED-UHFFFAOYSA-N 0.000 description 5
- 238000005160 1H NMR spectroscopy Methods 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000012280 lithium aluminium hydride Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 230000035484 reaction time Effects 0.000 description 4
- 230000002194 synthesizing effect Effects 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- DHADXHPEGZFGSI-UHFFFAOYSA-N trichloro(3,5-diethylheptan-4-yl)silane Chemical compound CCC(CC)C([Si](Cl)(Cl)Cl)C(CC)CC DHADXHPEGZFGSI-UHFFFAOYSA-N 0.000 description 4
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 4
- 239000005052 trichlorosilane Substances 0.000 description 4
- BBMMQBBQAUULOY-UHFFFAOYSA-N CC(C)C([SiH3])C(C)C Chemical compound CC(C)C([SiH3])C(C)C BBMMQBBQAUULOY-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 3
- 229910003828 SiH3 Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000011541 reaction mixture Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- YGWLXVQKNNJFPE-UHFFFAOYSA-N trichloro(3,5-dimethylheptan-4-yl)silane Chemical compound CCC(C)C([Si](Cl)(Cl)Cl)C(C)CC YGWLXVQKNNJFPE-UHFFFAOYSA-N 0.000 description 3
- VVCFYASOGFVJFN-UHFFFAOYSA-N 2,4-Dimethyl-2-pentene Chemical compound CC(C)C=C(C)C VVCFYASOGFVJFN-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- WYGWHHGCAGTUCH-UHFFFAOYSA-N 2-[(2-cyano-4-methylpentan-2-yl)diazenyl]-2,4-dimethylpentanenitrile Chemical compound CC(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)C WYGWHHGCAGTUCH-UHFFFAOYSA-N 0.000 description 2
- RCEJCSULJQNRQQ-UHFFFAOYSA-N 2-methylbutanenitrile Chemical compound CCC(C)C#N RCEJCSULJQNRQQ-UHFFFAOYSA-N 0.000 description 2
- CRCGZJOSJCBRKM-UHFFFAOYSA-N 3,5-diethylhept-3-ene Chemical compound CCC(CC)C=C(CC)CC CRCGZJOSJCBRKM-UHFFFAOYSA-N 0.000 description 2
- OXOLZWHOQAEIAW-UHFFFAOYSA-N 3,5-dimethylhept-3-ene Chemical compound CCC(C)C=C(C)CC OXOLZWHOQAEIAW-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- NBDULQDWIWTQRA-UHFFFAOYSA-N [N].CCCCCCC Chemical compound [N].CCCCCCC NBDULQDWIWTQRA-UHFFFAOYSA-N 0.000 description 2
- KYIKRXIYLAGAKQ-UHFFFAOYSA-N abcn Chemical compound C1CCCCC1(C#N)N=NC1(C#N)CCCCC1 KYIKRXIYLAGAKQ-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- GKCPCPKXFGQXGS-UHFFFAOYSA-N ditert-butyldiazene Chemical compound CC(C)(C)N=NC(C)(C)C GKCPCPKXFGQXGS-UHFFFAOYSA-N 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- MFHGKNBDYCLVST-UHFFFAOYSA-N heptylsilane Chemical compound CCCCCCC[SiH3] MFHGKNBDYCLVST-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000003505 polymerization initiator Substances 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- YTRKYAPFOUHQBV-UHFFFAOYSA-N (3-ethyl-5-methylheptan-4-yl)silane Chemical compound CCC(C)C([SiH3])C(CC)CC YTRKYAPFOUHQBV-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- IZSBIPQYBGDXJZ-UHFFFAOYSA-N 2,4-dimethylhex-2-ene Chemical compound CCC(C)C=C(C)C IZSBIPQYBGDXJZ-UHFFFAOYSA-N 0.000 description 1
- HBJBUABOUXGIKU-UHFFFAOYSA-N 2,4-dimethylhexan-3-ylsilane Chemical compound CCC(C)C([SiH3])C(C)C HBJBUABOUXGIKU-UHFFFAOYSA-N 0.000 description 1
- KISMSDOWUXLIDE-UHFFFAOYSA-N 3,5-diethylheptan-4-ylsilane Chemical compound CCC(CC)C([SiH3])C(CC)CC KISMSDOWUXLIDE-UHFFFAOYSA-N 0.000 description 1
- DBSKSKWWWFUWRU-UHFFFAOYSA-N 3,5-dimethylheptan-4-ylsilane Chemical compound CCC(C)C([SiH3])C(C)CC DBSKSKWWWFUWRU-UHFFFAOYSA-N 0.000 description 1
- NQPCRMAEHAOPQV-UHFFFAOYSA-N 3-ethyl-5-methylhept-3-ene Chemical compound CCC(C)C=C(CC)CC NQPCRMAEHAOPQV-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAKQWTWKLQYTNR-UHFFFAOYSA-N CC(C)C(C(C)C)[Li] Chemical compound CC(C)C(C(C)C)[Li] ZAKQWTWKLQYTNR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- LELOWRISYMNNSU-UHFFFAOYSA-N Hydrocyanic acid Natural products N#C LELOWRISYMNNSU-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- SOMSXRFNBORXAU-UHFFFAOYSA-N benzene toluene Chemical compound C1=CC=CC=C1.CC1=CC=CC=C1.CC1=CC=CC=C1 SOMSXRFNBORXAU-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910000103 lithium hydride Inorganic materials 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- FJBZRAKHEPMPES-UHFFFAOYSA-N trichloro-(3-ethyl-5-methylheptan-4-yl)silane Chemical compound CCC(C)C([Si](Cl)(Cl)Cl)C(CC)CC FJBZRAKHEPMPES-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明はアルキルシランに関
し、詳しくは、導電性材料、光導電性材料、フォトレジ
スト等の光反応材料、重合開始剤および炭化ケイ素系セ
ラミックスなどの前駆体として有用なポリシランを得る
際の出発原料として好適なアルキルシランに係る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an alkylsilane, and more particularly, to a polysilane useful as a conductive material, a photoconductive material, a photoreactive material such as a photoresist, a polymerization initiator, and a precursor of a silicon carbide ceramic. The present invention relates to an alkylsilane suitable as a starting material for obtaining
【0002】[0002]
【従来の技術および発明が解決しようとする課題】近
年、ポリシラン類を導電性材料の素材として、あるいは
光導電性材料の素材として利用する試みがなされてい
る。例えば、直鎖状のポリメチルフェニルシランにAs
F5 をドーピングすることで、導電性の高い材料が得ら
れている。また、ポリシランを熱分解することで導電性
材料や光導電性材料を得る試みもなされている。例え
ば、分子構造が網目状であるポリフェニルシリンを薄膜
化した後、真空中で熱分解することにより、SiC薄膜
を得ることができ、この熱分解を600℃にて行うこと
で、Eg.opt =1.1eVの半導体薄膜が得られる旨の
報告もある(Chem.Lett.、1101(199
1))。しかし、ポリフェニルシリンは熱分解過程での
炭素置換基の脱離性が低く、熱分解後の材料に多量の炭
素が残存するため、光導電性材料等の製造原料としては
不向きである。また、熱分解を真空中で行わざるを得な
いため、半導体薄膜を得る場合でも、コスト高になる憾
みがある。2. Description of the Related Art In recent years, attempts have been made to use polysilanes as a material for a conductive material or as a material for a photoconductive material. For example, linear polymethylphenylsilane
By doping F 5, a highly conductive material is obtained. Attempts have also been made to obtain conductive and photoconductive materials by thermally decomposing polysilane. For example, after thinning polyphenylsilin having a molecular structure of a network, a SiC thin film can be obtained by pyrolysis in a vacuum, and by performing this pyrolysis at 600 ° C., E g. There is also a report that a semiconductor thin film of opt = 1.1 eV can be obtained (Chem. Lett., 1101 (199).
1)). However, polyphenylsilin is not suitable as a raw material for producing a photoconductive material or the like because the carbon substituent has a low elimination property during the thermal decomposition process and a large amount of carbon remains in the material after the thermal decomposition. Further, since thermal decomposition must be performed in a vacuum, there is a regret that the cost increases even when a semiconductor thin film is obtained.
【0003】[0003]
【課題を解決するための手段】本発明者は、上記の如き
従来の技術を鑑みて鋭意研究を重ねた結果、優れた特性
を有する新規化合物としてアルキルシランを見出した。
すなわち、本発明に係るアルキルシランは、下記一般式
(1)で示すことができる。Means for Solving the Problems The present inventor has conducted intensive studies in view of the above-mentioned conventional techniques, and as a result, has found an alkylsilane as a novel compound having excellent characteristics.
That is, the alkylsilane according to the present invention can be represented by the following general formula (1).
【化2】 (式中、Rはメチル基またはエチル基を表し、Rが同一
でもあるいは異なっていても良く、Xは水素原子あるい
はハロゲン原子を表す。)Embedded image (In the formula, R represents a methyl group or an ethyl group, R may be the same or different, and X represents a hydrogen atom or a halogen atom.)
【0004】[0004]
【発明の実施の形態】以下、本発明について詳細に説明
する。上記一般式(1)において、Rはメチル基あるい
はエチル基を表し、Rが各々同一でもあるいは異なって
いても良い。Xは水素原子あるいはハロゲン原子を表
し、ハロゲン原子としては、フッ素、塩素、臭素、ヨウ
素が挙げられるが、特に塩素が好ましい。一般式(1)
に包含されるアルキルシランの具体例を列記すると、
2,4−ジメチル−3−シリルペンタン、2,4−ジメ
チル−3−シリルヘキサン、3,5−ジメチル−4−シ
リルヘプタン、3−エチル−5−メチル−4−シリルヘ
プタン、3,5−ジエチル−4−シリルヘプタン、2,
4−ジメチル−3−トリクロロシリルペンタン、2,4
−ジメチル−3−トリクロロシリルヘキサン、3,5−
ジメチル−4−トリクロロシリルヘプタン、3−エチル
−5−メチル−4−トリクロロシリルヘプタン、3,5
−ジエチル−4−トリクロロシリルヘプタン等が挙げら
れる。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. In the general formula (1), R represents a methyl group or an ethyl group, and Rs may be the same or different. X represents a hydrogen atom or a halogen atom. Examples of the halogen atom include fluorine, chlorine, bromine and iodine, and chlorine is particularly preferable. General formula (1)
Listed below are specific examples of alkylsilanes included in:
2,4-dimethyl-3-silylpentane, 2,4-dimethyl-3-silylhexane, 3,5-dimethyl-4-silylheptane, 3-ethyl-5-methyl-4-silylheptane, 3,5- Diethyl-4-silylheptane, 2,
4-dimethyl-3-trichlorosilylpentane, 2,4
-Dimethyl-3-trichlorosilylhexane, 3,5-
Dimethyl-4-trichlorosilylheptane, 3-ethyl-5-methyl-4-trichlorosilylheptane, 3,5
-Diethyl-4-trichlorosilylheptane and the like.
【0005】本発明のアルキルシランを製造する方法
は、特に限定されるものではなく、その製造には各種の
合成手法を利用することができるが、典型的な製造方法
を例示すれば、次の通りである。一般式(1)で示され
るアルキルシランにおいて、ケイ素原子に3個のハロゲ
ン原子が結合したアルキルトリハロゲノシランを合成す
る第1の方法は、式(a)で示される有機金属化合物と、
テトラハロゲン化ケイ素とを反応させる方法である(式
(2)参照)。[0005] The method for producing the alkylsilane of the present invention is not particularly limited, and various synthetic techniques can be used for the production thereof. It is on the street. In the alkylsilane represented by the general formula (1), a first method for synthesizing an alkyltrihalogenosilane in which three halogen atoms are bonded to a silicon atom comprises an organometallic compound represented by the formula (a):
This is a method of reacting with silicon tetrahalide (see formula (2)).
【化3】 Embedded image
【化4】 (式中、Rは前記一般式(1)におけるRと同一であ
り、X’はハロゲン原子を示し、Mはリチウムまたはハ
ロゲン化マグネシウムを示す。) 式(a) で示される有機金属化合物としては、2,4−ジ
メチル−3−リチオペンタン,2,4−ジメチル−3−
リチオヘキサン,3,5−ジメチル−4−リチオヘプタ
ン,3−エチル−5−メチル−4−リチオヘプタン,
3,5−ジエチル−4−リチオヘプタン等が使用可能で
ある。なお、これらの有機金属化合物は、対応するハロ
ゲン化アルカンとリチウムまたはマグネシウムとを、ジ
エチルエーテル、テトラヒドロフランなどのエーテル溶
媒中で反応させることで容易に得ることができる。式
(a) の有機金属化合物と反応させるテトラハロゲン化シ
ランとしては、各種のものを用いることができるが、特
にテトラクロロシランが好ましい。式(2)の反応を遂
行させりる方法は特に限定されないが、通常はテトラハ
ロゲン化シラン(典型的にはテトラクロロシラン)をエ
ーテルあるいはテトラヒドロフラン等の極性溶媒に溶解
した溶液に、式(a) の前記有機金属化合物をジエチルエ
ーテル、テトラヒドロフラン等の極性溶媒に溶解した溶
液を添加して反応させる方法が採用される。この場合の
反応温度は用いる有機金属化合物の種類および添加量に
より適宜選択されるが、通常−20〜100℃、好まし
くは0〜80℃、反応時間は通常5分〜10時間、好ま
しくは20分〜5時間の範囲で選ばれる。反応原料の仕
込み組成は任意に選ぶことができるが、式(a) の前記有
機金属化合物/テトラハロゲン化シランのモル比を、通
常0.5〜1.2、好ましくは0.8〜1.1の範囲に
することが望ましい。反応終了後は、反応混合物から副
生塩を濾別し、濾液を蒸留することで、目的生成物であ
るアルキルトリハロゲノシランを得ることができる。Embedded image (Wherein, R is the same as R in the general formula (1), X ′ represents a halogen atom, and M represents lithium or magnesium halide.) As the organometallic compound represented by the formula (a), , 2,4-dimethyl-3-lithiopentane, 2,4-dimethyl-3-
Lithiohexane, 3,5-dimethyl-4-lithioheptane, 3-ethyl-5-methyl-4-lithioheptane,
3,5-diethyl-4-lithioheptane and the like can be used. These organometallic compounds can be easily obtained by reacting the corresponding halogenated alkane with lithium or magnesium in an ether solvent such as diethyl ether or tetrahydrofuran. formula
As the tetrahalogenated silane to be reacted with the organometallic compound (a), various ones can be used, and tetrachlorosilane is particularly preferred. The method for carrying out the reaction of the formula (2) is not particularly limited, but usually, a solution obtained by dissolving a tetrahalogenated silane (typically, tetrachlorosilane) in a polar solvent such as ether or tetrahydrofuran is added to the solution of the formula (a). And a solution prepared by dissolving the organometallic compound in a polar solvent such as diethyl ether or tetrahydrofuran. The reaction temperature in this case is appropriately selected depending on the type and amount of the organometallic compound to be used, but is usually -20 to 100 ° C, preferably 0 to 80 ° C, and the reaction time is usually 5 minutes to 10 hours, preferably 20 minutes. ~ 5 hours. Although the charge composition of the reaction raw material can be arbitrarily selected, the molar ratio of the organometallic compound of the formula (a) / tetrahalogenated silane is usually 0.5 to 1.2, preferably 0.8 to 1. It is desirable to set the range to 1. After the completion of the reaction, by-product salts are separated from the reaction mixture by filtration, and the filtrate is distilled to obtain an alkyltrihalogenosilane as a target product.
【0006】アルキルトリハロゲノシランを合成する第
2の方法は、オレフィンとトリハロゲノシランをラジカ
ル開始剤の存在下に反応させてオレフィンをヒドロシリ
ル化する方法である(式(3)参照)。A second method for synthesizing an alkyl trihalogenosilane is a method of reacting an olefin with a trihalogenosilane in the presence of a radical initiator to hydrosilylate the olefin (see formula (3)).
【化5】 (式中、Rは前記一般式(1)におけるRと同一であ
り、X’はハロゲン原子を示す。) この反応でのオレフィンとしては、2,4−ジメチル−
2−ペンテン、2,4−ジメチル−2−ヘキセン、3,
5−ジメチル−3−ヘプテン、3−エチル−5−メチル
−3−ヘプテン、3,5−ジエチル−3−ヘプテン等が
使用可能であり、トリハロゲノシランとしては、各種の
ものを用いることができるが、特にトリクロロシランが
好ましい。使用するラジカル開始剤には特に限定されな
いが、一般的には、1,1’−アゾビス(イソブチロニ
トリル)(AIBN)、1,1’−アゾビス(シクロヘ
キサン−1−カルボニトリル)、2,2’−アゾビス
(2−メチルブチロニトリル)、2,2’−アゾビス
(2,4−ジメチルバレロニトリル)、2,2’−アゾ
ビス(2−メチルプロパン)などを使用するのが通常で
ある。式(3)の反応を遂行させる方法は特に限定され
ないが、通常はオートクレーブ中でオレフィンとトリハ
ロゲノシランとを、ラジカル開始剤の存在下反応させ
る。反応温度は、通常80℃〜230℃、好ましくは1
00℃〜200℃の範囲内とすることが望ましい。反応
時間は、反応スケール、反応容器により適宜選択される
が、通常は30分〜5日間、好ましくは1時間〜100
時間程度の範囲にある。反応原料の仕込み組成は任意に
選べるが、一般的には、オレフィン/トリハロゲンノシ
ランのモル比は、通常1.0〜5.0、好ましくは1.
5〜3.0の範囲にある。ラジカル開始剤の使用量も特
に限定されない。しかし、通常はラジカル開始剤/オレ
フィンのモル比は、0.05〜1.0の範囲にある。目
的生成物の回収は、蒸留で容易に行うことができる。Embedded image (In the formula, R is the same as R in the general formula (1), and X ′ represents a halogen atom.) As the olefin in this reaction, 2,4-dimethyl-
2-pentene, 2,4-dimethyl-2-hexene, 3,
5-dimethyl-3-heptene, 3-ethyl-5-methyl-3-heptene, 3,5-diethyl-3-heptene and the like can be used, and various trihalogenosilanes can be used. However, trichlorosilane is particularly preferred. The radical initiator to be used is not particularly limited, but generally, 1,1′-azobis (isobutyronitrile) (AIBN), 1,1′-azobis (cyclohexane-1-carbonitrile), 2,2 Usually, 2'-azobis (2-methylbutyronitrile), 2,2'-azobis (2,4-dimethylvaleronitrile), 2,2'-azobis (2-methylpropane) and the like are used. . The method for carrying out the reaction of the formula (3) is not particularly limited, but usually, the olefin and the trihalogenosilane are reacted in an autoclave in the presence of a radical initiator. The reaction temperature is usually 80 ° C to 230 ° C, preferably 1 to
It is desirable to be in the range of 00 ° C to 200 ° C. The reaction time is appropriately selected depending on the reaction scale and the reaction vessel, but is usually 30 minutes to 5 days, preferably 1 hour to 100 days.
In the range of hours. Although the charge composition of the reaction raw materials can be arbitrarily selected, the olefin / trihalogenosilane molar ratio is generally 1.0 to 5.0, preferably 1.
It is in the range of 5-3.0. The amount of the radical initiator used is not particularly limited. However, usually the molar ratio of radical initiator / olefin is in the range of 0.05 to 1.0. The desired product can be easily recovered by distillation.
【0007】次に、一般式(1)で示される本発明のア
ルキルシランにおいて、ケイ素原子に3個の水素原子が
結合したアルキルトリヒドロシランを合成する方法を例
示すれば、その第一の例は、アルキルトリハロゲノシラ
ンを金属水素化物を用いて水素化する方法である(式
(4)参照)。Next, a method for synthesizing alkyltrihydrosilane in which three hydrogen atoms are bonded to a silicon atom in the alkylsilane of the present invention represented by the general formula (1) will be exemplified. And hydrogenation of an alkyltrihalogenosilane using a metal hydride (see formula (4)).
【化6】 (式中、Rは前記一般式(1)におけるRと同一であ
り、X’はハロゲン原子を示す。) この反応に用いる金属水素化物は、特に限定されること
はないが、通常は、例えば、水素化リチウム、水素化ナ
トリウム、水素化ホウ素ナトリウム,水素化リチウムア
ルミニウムなどが使用される。式(4)の反応を遂行さ
せる方法も任意に選択することができるが、一般的に
は、対応するアルキルトリハロゲノシランを、ジエチル
エーテル、ジブチルエーテル,テトラヒドロフランなど
のエーテル類、ベンゼントルエン、ヘキサンなどの炭化
水素類から選ばれる溶媒中で、金属水素化物と反応させ
る方法が望ましい。このときの反応温度は、通常−20
℃〜100℃、好ましくは0℃〜80℃の範囲であるこ
とが望ましい。反応時間は、反応スケール、反応容器に
より適宜選択されるが、一般的には、5分〜1日間、好
ましくは10分〜4時間程度の範囲にある。 金属水素
化物の使用量は、通常、金属水素化物/アルキルトリハ
ロゲノシランのモル比で、0.5〜4.0、好ましくは
0.7〜2.0の範囲にある。目的生成物の回収は、反
応混合物中に残存する過剰の金属水素化物を水またはア
ルコールで不活性化し、濾過又は水洗により副生塩を除
去して蒸留することで行うことができる。Embedded image (In the formula, R is the same as R in the general formula (1), and X ′ represents a halogen atom.) The metal hydride used in this reaction is not particularly limited. , Lithium hydride, sodium hydride, sodium borohydride, lithium aluminum hydride and the like are used. The method for carrying out the reaction of the formula (4) can be arbitrarily selected, but generally, the corresponding alkyltrihalogenosilane is converted to an ether such as diethyl ether, dibutyl ether, tetrahydrofuran, benzenetoluene, hexane or the like. A method of reacting with a metal hydride in a solvent selected from the above hydrocarbons is desirable. The reaction temperature at this time is usually -20.
The temperature is desirably in the range of from 100C to 100C, preferably from 0C to 80C. The reaction time is appropriately selected depending on the reaction scale and the reaction vessel, but generally ranges from 5 minutes to 1 day, preferably from about 10 minutes to 4 hours. The amount of the metal hydride used is usually in the range of 0.5 to 4.0, preferably 0.7 to 2.0, in terms of the molar ratio of the metal hydride / alkyltrihalogenosilane. The target product can be recovered by inactivating excess metal hydride remaining in the reaction mixture with water or alcohol, and removing the by-product salt by filtration or washing with water and distillation.
【0008】アルキルトリヒドロシランを合成する第2
の方法は、オレフィンとシランガス(モノシラン)とを
ラジカル開始剤の存在下反応させる方法である(式
(5)参照)。A second method for synthesizing alkyltrihydrosilane
Is a method of reacting an olefin with a silane gas (monosilane) in the presence of a radical initiator (see formula (5)).
【化7】 (式中、Rは前記一般式(1)におけるRと同一であ
る。) 式(5)の反応のオレフィンとしては、式(3)の反応
について先に説明したオレフィンがいずれも使用可能で
ある。ラジカル開始剤としては任意のラジカル開始剤が
使用できるが、通常は、1,1’−アゾビス(イソブチ
ロニトリル)(AIBN)、1,1’−アゾビス(シク
ロヘキサン−1−カルボニトリル)、2,2’−アゾビ
ス(2−メチルブチロニトリル)、2,2’−アゾビス
(2,4−ジメチルバレロニトリル)、2,2’−アゾ
ビス(2−メチルプロパン)などが使用される。式
(5)の反応は任意の方法で遂行させることができる
が、通常はオートクレーブを使用して、ラジカル開始剤
の存在下にオレフィンとシランガスを反応させる。この
時の反応温度は、一般に、80℃〜230℃、好ましく
は100℃〜200℃の範囲にある。反応時間は、反応
スケール、反応容器により適宜選択されるが、通常は3
0分〜5日間、好ましくは1時間〜100時間程度であ
る。反応に際してのオレフィン/シランのモル比も任意
であるが、通常は1.0〜5.0、好ましくは1.5〜
3.0の範囲で選ばれる。ラジカル開始剤の使用量も任
意に選ぶことができるが、通常はラジカル開始剤/オレ
フィンのモル比で、0.05〜1.0の範囲で選ばれ
る。目的生成物は反応混合物を蒸留することで容易に回
収することができる。以上、本発明に係るアルキルシラ
ンの製造方法の典型例を説明したが、本発明のアルキル
シランの製造法はこれらに限定させるものではない。Embedded image (In the formula, R is the same as R in the general formula (1).) As the olefin for the reaction of the formula (5), any of the olefins described above for the reaction of the formula (3) can be used. . Although any radical initiator can be used as the radical initiator, usually, 1,1′-azobis (isobutyronitrile) (AIBN), 1,1′-azobis (cyclohexane-1-carbonitrile), , 2'-Azobis (2-methylbutyronitrile), 2,2'-azobis (2,4-dimethylvaleronitrile), 2,2'-azobis (2-methylpropane) and the like are used. Although the reaction of the formula (5) can be carried out by any method, usually, an olefin is reacted with silane gas in the presence of a radical initiator using an autoclave. The reaction temperature at this time is generally in the range of 80C to 230C, preferably 100C to 200C. The reaction time is appropriately selected depending on the reaction scale and the reaction vessel.
It is 0 minute to 5 days, preferably about 1 hour to 100 hours. The molar ratio of olefin / silane at the time of the reaction is also arbitrary, but is usually from 1.0 to 5.0, preferably from 1.5 to 5.0.
It is selected in the range of 3.0. The amount of the radical initiator used can be arbitrarily selected, but is usually selected in a molar ratio of radical initiator / olefin in the range of 0.05 to 1.0. The desired product can be easily recovered by distilling the reaction mixture. As described above, the typical example of the method for producing an alkylsilane according to the present invention has been described, but the method for producing an alkylsilane according to the present invention is not limited thereto.
【0009】[0009]
【発明の効果】上記の一般式(1)で示される本発明の
アルキルシランは、導電性材料、光導電性材料、フォト
レジスト等の光反応材料の前駆体として、あるいは重合
開始剤および炭化ケイ素系セラミックスの前駆体として
使用できるポリシランを得る場合の単量体として有用で
ある。本発明のアルキルシランから得られるポリシラン
は、分子構造が網目状のポリシランであって、しかもそ
の炭素置換基は、窒素あるいはアルゴン雰囲気下で熱分
解させた際に、脱離性の良好であるという特長を備えて
いる。The alkylsilane of the present invention represented by the above general formula (1) can be used as a precursor of a photoreactive material such as a conductive material, a photoconductive material, a photoresist, or a polymerization initiator and silicon carbide. It is useful as a monomer when obtaining a polysilane that can be used as a precursor of a base ceramic. The polysilane obtained from the alkylsilane of the present invention is a polysilane having a network structure of a network, and its carbon substituent has good desorbability when thermally decomposed under a nitrogen or argon atmosphere. Has features.
【0010】[0010]
【実施例】以下に本発明を実施例により詳細に説明する
が、本発明はこれらの実施例に何ら限定されるものでは
ない。 実施例12,4−ジメチル−3−トリクロロシリルペンタン 窒素雰囲気下、撹拌装置付き容量1リットルのオートク
レーブに、2,4−ジメチル−3−ペンテン55g
(0.56モル)と、トリクロロシラン148g(1.
1モル)と、1,1’−アゾビス(シクロヘキサン−1
−カルボニトリル)17g(70ミリモル)を入れ、反
応温度130℃にて4日間反応を行った。得られた反応
液を蒸留精製し,2,4−ジメチル−3−トリクロロシ
リルペンタン117g(0.50モル)を得た。構造確
認は 1H−NMRにより行った。 収率:89%、沸点:110〜120℃/80mmHg1 H−NMRスペクトル(CDCl3 ) 2.29(m,2H,≡CH,J=4.0,J=7.
0) 1.38(t,1H,=CHSi J=4.0) 1.17,1.14(d×2,12H,−CH3 ,J=
7.0) 質量分析スペクトル(マススペクトル) C7H15SiCl3 calc: C 35.99, H 6.47, Si 12.02, Cl 45.52 obs: C 36.22, H 6.41, Si 12.17, Cl 45.20 実施例22,4−ジメチル−3−シリルペンタン 窒素雰囲気下、撹拌機、還流冷却管および滴下ロートを
取り付けた1リットルの四つ口フラスコに、水素化リチ
ウムアルミニウム50g(1.3モル)とジエチルエー
テル1リットルを入れ、撹拌しながら実施例1で得られ
た2,4−ジメチル−3−トリクロロシリルペンタン1
17g(0.50モル)のジエチルエーテル200ミリ
リットルの混合液を2時間かけて滴下した。滴下終了
後、2時間加熱還流を行った。反応終了後、氷冷下にて
水40ミリリットルを滴下し、希塩酸1リットル、ジエ
チルエーテル500ミリリットルを順次加え、有機層を
分離後、さらに水500ミリリットル×3にて洗浄し
た。有機層を無水硫酸マグネシウムにて乾燥、濾過し、
続いて蒸留精製して2,4−ジメチル−3−シリルペン
タン39g(0.30モル)を得た。構造確認は 1H−
NMRにより行った。 収率:60%、沸点:125〜128℃1 H−NMRスペクトル(CDCl3 ) 3.44(d,3H,−SiH3,J=4.0) 1.91(oxtet,2H,≡CH,J=6.6) 0.97,0.95(d×2,12H,−CH3,J=
6.6) 0.75〜0.87(m,1H,=CHSi) マススペクトル 実施例33,5−ジエチル−4−トリクロロシリルヘプタン 窒素雰囲気下、撹拌装置付き容量1リットルのオートク
レーブに、3,5−ジエチル−3−へプテン77g
(0.50モル)と、トリクロロシラン134g(1.
0モル)と、1,1’−アゾビス(シクロヘキサン−1
−カルボニトリル)24g(0.10モル)を入れ、反
応温度130℃にて5日間反応を行った。得られた反応
液を蒸留精製し、3,5−ジエチル−4−トリクロロシ
リルヘプタン80g(0.28モル)を得た。構造確認
は 1H−NMRにより行った。 収率:55%、沸点:130〜135℃/10mmHg1 H−NMRスペクトル(CDCl3 ) 2.21〜2.39(m,2H,≡CH) 1.65〜1.83(m,8H,=CH2) 1.38(t,1H,=CHSi,J=4.1) 1.14,1.07(t×2,12H,−CH3,J=
6.8) マススペクトル C11H23SiCl3 calc: C 45.60, H 8.00, Si 9.69, Cl 36.71 obs: C 45.29, H 8.13, Si 9.85, Cl 36.73 実施例43,5−ジエチル−4−シリルヘプタン 窒素雰囲気下、撹拌機、還流冷却管および滴下ロートを
取り付けた1リットルの四つ口フラスコに、水素化リチ
ウムアルミニウム27g(0.71モル)とジエチルエ
ーテル500ミリリットルを入れ、撹拌しながら実施例
3で得られた3,5−ジエチル−4−トリクロロシリル
ヘプタン80g(0.28モル)のジエチルエーテル1
00ミリリットルの混合液を2時間かけて滴下した。滴
下終了後、2時間加熱還流を行った。反応終了後、氷冷
下にて水30ミリリットルを滴下し、希塩酸500ミリ
リットル、ジエチルエーテル500ミリリットルを順次
加え、有機層を分離後、さらに水500ミリリットル×
3にて洗浄した。有機層を無水硫酸マグネシウムにて乾
燥、濾過し、続いて蒸留精製し、3,5−ジエチル−4
−シリルヘプタン28g(0.12モル)を得た。構造
確認は 1H−NMRにより行った。 収率:43% 沸点:92〜98℃/20mmHg1 H−NMRスペクトル(CDCl3 ) 3.46(d,3H,−SiH3,J=4.0) 2.02(m,2H,≡CH) 1.55〜1.80(m,8H,=CH2) 1.02,0.97(t×2,12H,−CH3,J=
6.8) 0.71〜0.82(m,1H,=CHSi) マススペクトル 実施例53,5−ジメチル−4−トリクロロシリルヘプタン 窒素雰囲気下、撹拌装置付き容量1リットルのオートク
レーブに、3,5−ジメチル−3−へプテン76g
(0.60モル)と、トリクロロシラン161g(1.
2モル)と、1,1’−アゾビス(シクロヘキサン−1
−カルボニトリル)29g(0.12モル)を入れ、反
応温度130℃にて5日間反応を行った。得られた反応
液を蒸留精製し、3,5−ジメチル−4−トリクロロシ
リルヘプタン92g(0.35モル)を得た。構造確認
は 1H−NMRにより行った。 収率:58%、沸点:100〜110℃/40mmHg1 H−NMRスペクトル(CDCl3 ) 2.21〜2.39(m,2H,≡CH) 1.55〜1.76(m,8H,=CH2) 1.43(t,1H,=CHSi,J=4.1) 1.08(d,6H,−CH3,J=6.8) 1.05(t,6H,−CH3,J=6.8) マススペクトル C9H19SiCl3 calc: C 41.31, H 7.32, Si 10.73, Cl 40.64 obs: C 41.86, H 7.78, Si 10.21, Cl 40.15 実施例63,5−ジメチル−4−シリルヘプタン 窒素雰囲気下、撹拌機、還流冷却管および滴下ロートを
取り付けた1リットルの四つ口フラスコに、水素化リチ
ウムアルミニウム33g(0.83モル)とジエチルエ
ーテル500ミリリットルを入れ、撹拌しながら実施例
5で得られた3,5−ジメチル−4−トリクロロシリル
ヘプタン92g(0.35モル)のジエチルエーテル1
00ミリリットルの混合液を2時間かけて滴下した。滴
下完了後、2時間加熱還流を行った。反応終了後、氷冷
下にて水40ミリリットルを滴下し、希塩酸500ミリ
リットル、ジエチルエーテル500ミリリットルを順次
加え、有機層を分離後、さらに水500ミリリットル×
3にて洗浄した。有機層を無水硫酸マグネシウムにて乾
燥、濾過し、続いて蒸留精製し、3,5−ジメチル−4
−シリルヘプタン22g(0.12モル)を得た。構造
確認は 1H−NMRにより行った。 収率:40%、沸点:90〜95℃/100mmHg1 H−NMRスペクトル(CDCl3 ) 3.44(d,3H,−SiH3,J=4.0) 1.93(m,2H,≡CH) 1.70〜1.82(m,8H,=CH2) 1.01(d,6H,−CH3,J=6.6) 0.95(t,6H,−CH3,J=6.7) 0.77〜0.83(m,1H,=CHSi) マススペクトル EXAMPLES The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples. Example 1 55 g of 2,4-dimethyl-3-pentene was placed in a 1-liter autoclave equipped with a stirrer under a nitrogen atmosphere of 2,4-dimethyl-3-trichlorosilylpentane.
(0.56 mol) and 148 g of trichlorosilane (1.
1 mol) and 1,1′-azobis (cyclohexane-1)
-Carbonitrile) (17 g, 70 mmol) was added, and the reaction was carried out at a reaction temperature of 130 ° C for 4 days. The obtained reaction solution was purified by distillation to obtain 117 g (0.50 mol) of 2,4-dimethyl-3-trichlorosilylpentane. The structure was confirmed by 1 H-NMR. Yield: 89%, Boiling point: 110-120 ° C / 80 mmHg 1 H-NMR spectrum (CDCl 3 ) 2.29 (m, 2H, ΔCH, J = 4.0, J = 7.
0) 1.38 (t, 1H, = CHSi J = 4.0) 1.17,1.14 (d × 2,12H, -CH 3, J =
7.0) Mass spectrometry spectrum (mass spectrum) C 7 H 15 SiCl 3 calc: C 35.99, H 6.47, Si 12.02, Cl 45.52 obs: C 36.22, H 6.41, Si 12.17, Cl 45.20 Example 2 2,4- Under a nitrogen atmosphere of dimethyl-3-silylpentane, 50 g (1.3 mol) of lithium aluminum hydride and 1 liter of diethyl ether were placed in a 1 liter four-necked flask equipped with a stirrer, a reflux condenser and a dropping funnel, 2,4-dimethyl-3-trichlorosilylpentane 1 obtained in Example 1 while stirring
A mixture of 17 g (0.50 mol) of diethyl ether (200 ml) was added dropwise over 2 hours. After the completion of the dropwise addition, the mixture was heated under reflux for 2 hours. After completion of the reaction, 40 ml of water was added dropwise under ice-cooling, 1 liter of dilute hydrochloric acid and 500 ml of diethyl ether were sequentially added. The organic layer was separated, and washed with 500 ml of water × 3. The organic layer was dried over anhydrous magnesium sulfate, filtered,
Subsequently, the residue was purified by distillation to obtain 39 g (0.30 mol) of 2,4-dimethyl-3-silylpentane. Structure confirmed 1 H-
Performed by NMR. Yield: 60%, Boiling point: 125-128 ° C 1 H-NMR spectrum (CDCl 3 ) 3.44 (d, 3H, -SiH3, J = 4.0) 1.91 (oxtet, 2H, ΔCH, J) = 6.6) 0.97, 0.95 (d × 2, 12H, -CH3, J =
6.6) 0.75-0.87 (m, 1H, = CHSi) Mass spectrum Example 3 77 g of 3,5-diethyl-3-heptene was placed in a 1-liter autoclave equipped with a stirrer under a nitrogen atmosphere of 3,5-diethyl-4-trichlorosilylheptane.
(0.50 mol) and 134 g of trichlorosilane (1.
0 mol) and 1,1′-azobis (cyclohexane-1)
(Carbonitrile) (24 g, 0.10 mol) was added, and the reaction was carried out at a reaction temperature of 130 ° C. for 5 days. The obtained reaction solution was purified by distillation to obtain 80 g (0.28 mol) of 3,5-diethyl-4-trichlorosilylheptane. The structure was confirmed by 1 H-NMR. Yield: 55%, boiling point: 130 to 135 ° C / 10 mmHg 1 H-NMR spectrum (CDCl 3 ) 2.21 to 2.39 (m, 2H, ≡CH) 1.65 to 1.83 (m, 8H, = CH2) 1.38 (t, 1H, = CHSi, J = 4.1) 1.14, 1.07 (tx2, 12H, -CH3, J =
6.8) Mass spectrum C 11 H 23 SiCl 3 calc: C 45.60, H 8.00, Si 9.69, Cl 36.71 obs: C 45.29, H 8.13, Si 9.85, Cl 36.73 Example 4 3,5-diethyl-4-silyl In a heptane nitrogen atmosphere, 27 g (0.71 mol) of lithium aluminum hydride and 500 ml of diethyl ether were placed in a 1-liter four-necked flask equipped with a stirrer, a reflux condenser and a dropping funnel, and stirred while stirring. 80 g (0.28 mol) of 3,5-diethyl-4-trichlorosilylheptane obtained in 3
00 ml of the mixture was added dropwise over 2 hours. After the completion of the dropwise addition, the mixture was heated under reflux for 2 hours. After the completion of the reaction, 30 ml of water was added dropwise under cooling with ice, 500 ml of dilute hydrochloric acid and 500 ml of diethyl ether were sequentially added. After separating the organic layer, 500 ml of water was further added.
Washed in 3. The organic layer was dried over anhydrous magnesium sulfate, filtered, and subsequently purified by distillation to give 3,5-diethyl-4.
28 g (0.12 mol) of silylheptane were obtained. The structure was confirmed by 1 H-NMR. Yield: 43% Boiling point: 92-98 ° C./20 mmHg 1 H-NMR spectrum (CDCl 3 ) 3.46 (d, 3H, —SiH3, J = 4.0) 2.02 (m, 2H, ΔCH) 1.55 to 1.80 (m, 8H, = CH2) 1.02, 0.97 (tx2, 12H, -CH3, J =
6.8) 0.71-0.82 (m, 1H, = CHSi) Mass spectrum Example 5 76 g of 3,5-dimethyl-3-heptene was placed in a 1-liter autoclave with a stirrer under a nitrogen atmosphere of 3,5-dimethyl-4-trichlorosilylheptane.
(0.60 mol) and 161 g of trichlorosilane (1.
2 mol) and 1,1′-azobis (cyclohexane-1)
-Carbonitrile) (29 g, 0.12 mol) was added, and the reaction was carried out at a reaction temperature of 130 ° C for 5 days. The obtained reaction solution was purified by distillation to obtain 92 g (0.35 mol) of 3,5-dimethyl-4-trichlorosilylheptane. The structure was confirmed by 1 H-NMR. Yield: 58%, Boiling point: 100-110 ° C / 40 mmHg 1 H-NMR spectrum (CDCl 3 ) 2.21-2.39 (m, 2H, ≡CH) 1.55-1.76 (m, 8H, = CH2) 1.43 (t, 1H, = CHSi, J = 4.1) 1.08 (d, 6H, -CH3, J = 6.8) 1.05 (t, 6H, -CH3, J = 6.8) Mass spectrum C 9 H 19 SiCl 3 calc: C 41.31, H 7.32, Si 10.73, Cl 40.64 obs: C 41.86, H 7.78, Si 10.21, Cl 40.15 Example 6 3,5-dimethyl-4-silyl In a heptane nitrogen atmosphere, 33 g (0.83 mol) of lithium aluminum hydride and 500 ml of diethyl ether were placed in a 1-liter four-necked flask equipped with a stirrer, a reflux condenser, and a dropping funnel, and stirred. 3,5-dimethyl-4-trichloro obtained in 5 Diethyl ether Riruheputan 92 g (0.35 mol) 1
00 ml of the mixture was added dropwise over 2 hours. After the completion of the dropwise addition, the mixture was heated under reflux for 2 hours. After completion of the reaction, 40 ml of water was added dropwise under ice-cooling, 500 ml of dilute hydrochloric acid and 500 ml of diethyl ether were sequentially added, and after separating the organic layer, 500 ml of water was further added.
Washed in 3. The organic layer was dried over anhydrous magnesium sulfate, filtered, and subsequently purified by distillation to give 3,5-dimethyl-4.
-22 g (0.12 mol) of silylheptane were obtained. The structure was confirmed by 1 H-NMR. Yield: 40%, Boiling point: 90-95 ° C./100 mmHg 1 H-NMR spectrum (CDCl 3 ) 3.44 (d, 3H, —SiH3, J = 4.0) 1.93 (m, 2H, ΔCH) ) 1.70-1.82 (m, 8H, = CH2) 1.01 (d, 6H, -CH3, J = 6.6) 0.95 (t, 6H, -CH3, J = 6.7) 0.77-0.83 (m, 1H, = CHSi) Mass spectrum
Claims (1)
ルシラン。 【化1】 (式中、Rはメチル基またはエチル基を表し、Rは同一
でもあるいは異なっていても良く、Xは水素原子あるい
はハロゲン原子を表す。)1. An alkylsilane represented by the following general formula (1). Embedded image (In the formula, R represents a methyl group or an ethyl group, R may be the same or different, and X represents a hydrogen atom or a halogen atom.)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9219020A JPH1149782A (en) | 1997-07-31 | 1997-07-31 | Alkylsilane |
US09/126,254 US6150549A (en) | 1997-07-31 | 1998-07-30 | Silane compound |
EP98850126A EP0894802B1 (en) | 1997-07-31 | 1998-07-30 | Silane compound |
DE69809148T DE69809148T2 (en) | 1997-07-31 | 1998-07-30 | silane compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9219020A JPH1149782A (en) | 1997-07-31 | 1997-07-31 | Alkylsilane |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1149782A true JPH1149782A (en) | 1999-02-23 |
Family
ID=16729002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9219020A Pending JPH1149782A (en) | 1997-07-31 | 1997-07-31 | Alkylsilane |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH1149782A (en) |
-
1997
- 1997-07-31 JP JP9219020A patent/JPH1149782A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2721108B2 (en) | Method for producing vinyl polymerizable silicone at one end | |
JP2011111399A (en) | Spiro type cyclotrisiloxane derivative, method for producing the same, film production method using the same and film | |
JPH1149782A (en) | Alkylsilane | |
EP0894802B1 (en) | Silane compound | |
JP2004256497A (en) | Polysubstituted polycyclic aromatic compound and method for producing the same | |
JPH1149783A (en) | Cycloalkylsilane | |
JPH11171889A (en) | Tertiary alkyl silane | |
JP5057301B2 (en) | Dialkylsilanol compound and process for producing the same | |
JPH0977762A (en) | Production of 1-allyloxymethyl-1,4-dioxane | |
JP3236409B2 (en) | Organosiloxy-substituted polysilane and method for producing the same | |
US9073952B1 (en) | Synthesis method for carbosilanes | |
JP4891536B2 (en) | Method for producing aminoaryl group-containing organosilicon compound, and method for producing an intermediate thereof | |
JP5057309B2 (en) | Dialkylsilane compound and method for producing the same | |
KR100923775B1 (en) | Preparation method of polychlorocarbosilanes | |
JP2011256120A (en) | Process for producing organoaminosilane compound | |
JPH0748387A (en) | Tert-butylakoxysilane and production thereof | |
JP2002012597A (en) | Organic silicon compound | |
JP2991818B2 (en) | Condensed 2-membered cyclic disilanilene-acetylene compound and method for producing the same | |
JP4262900B2 (en) | Tetra-tertiary alkoxysilane production method | |
JP4001282B2 (en) | Process for producing organosilicon compounds by silylation reaction of conjugated dienes | |
JP4693265B2 (en) | Method for producing cyclic silylamine compound | |
JP2903487B2 (en) | Cyclopentadienyl group-containing silane compound and method for producing the same | |
JPS6039079B2 (en) | Method for manufacturing disilanes | |
JPH08119977A (en) | Production of asymmetric disiloxane compound | |
JPH0812683A (en) | Bis(silylpropyl)allene and its production |