JPH1146033A - Gas laser oscillator - Google Patents

Gas laser oscillator

Info

Publication number
JPH1146033A
JPH1146033A JP20158997A JP20158997A JPH1146033A JP H1146033 A JPH1146033 A JP H1146033A JP 20158997 A JP20158997 A JP 20158997A JP 20158997 A JP20158997 A JP 20158997A JP H1146033 A JPH1146033 A JP H1146033A
Authority
JP
Japan
Prior art keywords
laser beam
laser
processing
absorber
high voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20158997A
Other languages
Japanese (ja)
Inventor
Takayuki Yamashita
隆之 山下
Satoshi Eguchi
聡 江口
Hiroyuki Hayashikawa
洋之 林川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP20158997A priority Critical patent/JPH1146033A/en
Priority to TW088221876U priority patent/TW440089U/en
Priority to US09/123,357 priority patent/US6337869B1/en
Publication of JPH1146033A publication Critical patent/JPH1146033A/en
Priority to US09/691,251 priority patent/US6327295B1/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To decrease variation rate of laser output for providing stable processing by applying high voltage under identical condition with processing in waiting, generating laser beam and absorbing the laser beam with an absorber so that the laser beam is not released to the outside. SOLUTION: A direct current high-voltage source 2 controlled by a control device 7 is discharged from discharging electrodes 3a and 3b by applying high voltage to the discharging electrodes 3a and 3b. Thus, a gas laser medium 1 is excited, which is filled in a laser tube 6 and resonated with an optical cavity comprising a partial transmission reflecting mirror 4 and a total reflection mirror 5, and a laser beam 11 is radiated from the partial transmission reflection mirror 4. An absorber 8 is in a closing position during waiting and in opening position at the processing start. While waiting, a high voltage which is identical to that at the processing start is applied to the discharging electrodes 3a and 3b by a processing start indication 12 input to a control device 10, and the laser beam 11 is not released to the outside during the waiting.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はパルス状のレーザビ
ームの変動率を低減し安定したレーザビームを発生する
ことができるガスレーザ発振装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas laser oscillator capable of generating a stable laser beam by reducing the fluctuation rate of a pulsed laser beam.

【0002】[0002]

【従来の技術】図1は本発明が実施の対象とするガスレ
ーザ発振装置の構成を示すブロック図である。
2. Description of the Related Art FIG. 1 is a block diagram showing a configuration of a gas laser oscillation device to which the present invention is applied.

【0003】図1において、1は気体レーザ媒質、2は
直流高電圧電源、3a,3bは直流高電圧電源2に接続さ
れた放電電極、4は光増幅しレーザビーム11を取り出す
部分透過型反射鏡、5は光増幅するための全反射鏡、6
はレーザ管、7は直流高電圧電源2を制御する制御装
置、8はアブソーバ、9はアブソーバ8の駆動装置、10
は駆動装置9の制御装置である。
In FIG. 1, 1 is a gas laser medium, 2 is a DC high voltage power supply, 3a and 3b are discharge electrodes connected to the DC high voltage power supply 2 and 4 is a partially transmissive reflection light for amplifying light and extracting a laser beam 11. Mirror 5, a total reflection mirror for amplifying light, 6
Is a laser tube, 7 is a control device for controlling the DC high-voltage power supply 2, 8 is an absorber, 9 is a driving device of the absorber 8, 10
Is a control device of the driving device 9.

【0004】まず、図1に示す制御装置7により制御さ
れる直流高電圧電源2は、この高圧電源に接続された放
電電極3a,3bに高電圧を印加することで、放電電極3
a,3bから放電される。これによりレーザ管6に満たさ
れた気体レーザ媒質1は、放電エネルギを得て励起さ
れ、その励起された気体レーザ媒質1は部分透過型反射
鏡4と全反射鏡5により形成された光共振器で共振状態
となり、部分透過型反射鏡4よりレーザビーム11が出力
される。そして加工を行っていない待機中にはアブソー
バ8は部分透過型反射鏡4の前方に位置しレーザビーム
が外部に漏れないようになっている。また加工を行って
いない待機中は任意の出力の放電を行っている。
First, a DC high-voltage power supply 2 controlled by a control device 7 shown in FIG. 1 applies a high voltage to discharge electrodes 3a and 3b connected to the high-voltage power supply, so that the discharge electrodes 3
Discharged from a and 3b. As a result, the gas laser medium 1 filled in the laser tube 6 is excited by obtaining discharge energy, and the excited gas laser medium 1 is an optical resonator formed by the partial transmission type reflection mirror 4 and the total reflection mirror 5. , And the laser beam 11 is output from the partial transmission mirror 4. During the standby time when the processing is not performed, the absorber 8 is located in front of the partial transmission type reflecting mirror 4 so that the laser beam does not leak outside. In addition, the discharge of an arbitrary output is performed during the standby time when the processing is not performed.

【0005】図6(A)および(B)に従来の制御装置10に入
力される加工開始指令12とレーザビーム11の外部放出状
態を示す。加工待機中(A)はアブソーバ8が閉状態でレ
ーザビーム11は外部に放出されないが、加工開始時(B)
はアブソーバ8が開状態となりレーザ光11は外部へ放出
される。このレーザビームが図示せざるプリント基板の
穴明けなどの加工に用いられる。
FIGS. 6A and 6B show a machining start command 12 input to a conventional control device 10 and an external emission state of a laser beam 11. During processing standby (A), the absorber 8 is closed and the laser beam 11 is not emitted to the outside, but at the start of processing (B)
As a result, the absorber 8 is opened, and the laser beam 11 is emitted to the outside. This laser beam is used for processing such as drilling of a printed board (not shown).

【0006】[0006]

【発明が解決しようとする課題】しかしながら上記の従
来の制御装置10による制御では、加工待機中の放電状態
と、実際の加工時の放電状態が異なるため、両者のレー
ザガスの解離状態が異なり加工開始時からレーザガスの
解離が安定するのに時間がかかり、レーザ出力の変動が
大きく加工が不安定であるという問題点を有していた。
また、部分透過型反射鏡および全反射鏡の熱影響による
安定および電極の表面状態の安定に時間がかかるため、
レーザ出力の変動が大きくなり加工が不安定になるとい
う問題点を有していた。
However, in the control by the conventional control device 10 described above, the discharge state during the machining standby and the discharge state during the actual machining are different, so that the dissociation state of both laser gases is different and the machining is started. From time to time, it takes time for the dissociation of the laser gas to stabilize, and the laser output fluctuates greatly and processing is unstable.
In addition, it takes time to stabilize the partial transmission type reflector and the total reflection mirror due to the thermal influence and to stabilize the electrode surface state.
There is a problem that the fluctuation of the laser output becomes large and the processing becomes unstable.

【0007】本発明は上記従来の問題点を解決すること
を目的とする。
An object of the present invention is to solve the above conventional problems.

【0008】[0008]

【課題を解決するための手段】この目的を達成するため
に本発明のガスレーザ発振装置は、レーザビームを受け
止めるアブソーバと、前記アブソーバを駆動する駆動装
置と、前記駆動装置の制御を行う制御装置を備え、レー
ザ加工を行っていない待機中においても、加工時と同等
の条件の高電圧を印加しレーザビームを発生させ、その
レーザビームを外部へ放出しないようにアブソーバで吸
収する制御を行う制御装置を有する。
To achieve this object, a gas laser oscillator according to the present invention comprises an absorber for receiving a laser beam, a driving device for driving the absorber, and a control device for controlling the driving device. A control device that, even during standby when laser processing is not performed, applies a high voltage under the same conditions as during processing, generates a laser beam, and controls absorption by an absorber so that the laser beam is not emitted to the outside Having.

【0009】上記構成により、本発明のガスレーザ発振
装置は、パルス状のレーザビームの変動率を低減し安定
したレーザビームを発生する作用を有する。
With the above configuration, the gas laser oscillation device of the present invention has an operation of reducing the fluctuation rate of a pulsed laser beam and generating a stable laser beam.

【0010】[0010]

【発明の実施の形態】以下、本発明の実施の形態を図1
から図5を用いて説明する。
FIG. 1 is a block diagram showing an embodiment of the present invention.
This will be described with reference to FIG.

【0011】(実施の形態)図1は前述したように本発
明が実施の対象とするガスレーザ発振装置の構成を示す
ブロック図であり、従来例と比較し異なっている部分
は、図2のガスレーザ発振装置の加工動作を示すように
加工待機中(A)の放電状態を、加工開始時(B)の条件と同
等になっていることである。
(Embodiment) FIG. 1 is a block diagram showing the configuration of a gas laser oscillation apparatus to which the present invention is applied, as described above. As shown in the machining operation of the oscillator, the discharge state during machining standby (A) is equivalent to the condition at the time of machining start (B).

【0012】つまり、アブソーバ8の動作は、従来と同
様に加工待機中(A)は閉状態であり、加工開始時(B)は開
状態である。そして、制御装置10に入力される加工開始
指令12により、加工待機中(A)も加工開始時(B)も同等の
高電圧が印加されていて、レーザビーム11は加工待機中
(A)は外部へ放出されないが、加工開始時(B)は外部へ放
出される。
That is, the operation of the absorber 8 is in the closed state during processing standby (A) and in the open state at the start of processing (B), as in the prior art. The same high voltage is applied during the processing standby (A) and at the start of processing (B) by the processing start command 12 input to the control device 10, and the laser beam 11 is in the processing standby
(A) is not emitted to the outside, but is emitted to the outside at the start of processing (B).

【0013】また、図3,図4,図5に各条件における
レーザ出力の変動率を表している。図3は指令出力(横
軸)とレーザピーク出力(縦軸)の変動率(%)を表してい
る。これにより、加工待機中(図2(A))に加工時(図2
(B))の指令出力で高電圧を印加するとレーザピーク出力
の変動率が低減されることがわかる。
FIGS. 3, 4 and 5 show the fluctuation rate of the laser output under each condition. FIG. 3 shows the fluctuation rate (%) between the command output (horizontal axis) and the laser peak output (vertical axis). As a result, during processing (FIG. 2A) during processing standby (FIG. 2A).
It can be seen that when a high voltage is applied with the command output of (B)), the fluctuation rate of the laser peak output is reduced.

【0014】図4はパルスON時間(横軸)とレーザピー
ク出力(縦軸)の変動率(%)を表している。これより加工
待機中(図2(A))に加工時(図2(B))のパルスON時間で
高電圧を印加するとレーザピーク出力の変動率が低減さ
れることがわかる。
FIG. 4 shows the fluctuation rate (%) of the pulse ON time (horizontal axis) and the laser peak output (vertical axis). From this, it can be seen that the fluctuation rate of the laser peak output is reduced when a high voltage is applied during the processing ON (FIG. 2B) during the processing standby (FIG. 2A) during the pulse ON time.

【0015】図5はパルス周波数(横軸)とレーザピーク
出力(縦軸)の変動率(%)を表している。これにより加工
待機中に加工時のパルス周波数で高電圧を印加するとレ
ーザピーク出力の変動率が低減されることがわかる。
FIG. 5 shows the fluctuation rate (%) of the pulse frequency (horizontal axis) and the laser peak output (vertical axis). Thus, it can be seen that the fluctuation rate of the laser peak output is reduced when a high voltage is applied at the pulse frequency during processing during the processing standby.

【0016】[0016]

【発明の効果】以上説明したように本発明は、前記レー
ザビームを受け止めるアブソーバと、このアブソーバを
駆動する駆動装置と、この駆動装置で制御を行う制御装
置を備え、レーザ加工を行っていない待機中において
も、加工時と同等の条件の高電圧を印加しパルス状のレ
ーザビームを発生しそのレーザビームを外部へ放出しな
いようにアブソーバで吸収する制御を行うことによりレ
ーザ出力変動率を低減し、より安定した加工を行うこと
ができる優れたガスレーザ発振装置を実現できるもので
ある。
As described above, the present invention comprises an absorber for receiving the laser beam, a driving device for driving the absorber, and a control device for controlling the driving device. Even during processing, the laser output fluctuation rate is reduced by applying a high voltage under the same conditions as during processing, generating a pulsed laser beam, and absorbing the laser beam with an absorber so as not to emit it to the outside. Thus, an excellent gas laser oscillation device capable of performing more stable processing can be realized.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明が実施の対象とするガスレーザ発振装置
の構成を示すブロック図である。
FIG. 1 is a block diagram illustrating a configuration of a gas laser oscillation device according to an embodiment of the present invention.

【図2】本発明の実施の形態におけるガスレーザ発振装
置の加工動作を示す図である。
FIG. 2 is a diagram illustrating a processing operation of the gas laser oscillation device according to the embodiment of the present invention.

【図3】本発明の実施の形態における指令出力とレーザ
ピーク出力の変動率の相関を示す図である。
FIG. 3 is a diagram showing a correlation between a command output and a fluctuation rate of a laser peak output in the embodiment of the present invention.

【図4】本発明の実施の形態におけるパルスON時間と
レーザピーク出力の変動率の相関を示す図である。
FIG. 4 is a diagram showing a correlation between a pulse ON time and a fluctuation rate of a laser peak output in the embodiment of the present invention.

【図5】本発明の実施の形態におけるパルス周波数とレ
ーザピーク出力の変動率の相関を示す図である。
FIG. 5 is a diagram showing a correlation between a pulse frequency and a fluctuation rate of a laser peak output in the embodiment of the present invention.

【図6】従来のガスレーザ発振装置の加工動作を示す図
である。
FIG. 6 is a diagram showing a processing operation of a conventional gas laser oscillation device.

【符号の説明】[Explanation of symbols]

8…アブソーバ、 9…駆動装置、 7,10…制御装
置。
8 ... absorber, 9 ... drive device, 7,10 ... control device.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 レーザガスを満たした放電管の両端に設
けた電極間にパルス状の高電圧を印加し、前記放電管内
に放電を発生させ、前記放電管の両端に全反射鏡および
部分反射鏡をそれぞれ配置し、光増幅することにより前
記放電管の軸方向にレーザビームを発生するガスレーザ
発振装置であって、前記レーザビームを受け止めるアブ
ソーバと、前記アブソーバを駆動する駆動装置と、前記
駆動装置の制御を行う制御装置を備え、レーザ加工を行
っていない待機中においても、加工時と同等の条件の高
電圧を印加しレーザビームを発生させ、そのレーザビー
ムを外部へ放出しないようにアブソーバで吸収する制御
を行う制御装置を有することを特徴とするガスレーザ発
振装置。
1. A pulse-like high voltage is applied between electrodes provided at both ends of a discharge tube filled with a laser gas to generate a discharge in the discharge tube, and a total reflection mirror and a partial reflection mirror are provided at both ends of the discharge tube. Respectively, a gas laser oscillator that generates a laser beam in the axial direction of the discharge tube by optical amplification, an absorber that receives the laser beam, a driving device that drives the absorber, and a Equipped with a control device that performs control, even during standby when laser processing is not being performed, a high voltage under the same conditions as during processing is applied to generate a laser beam, and the laser beam is absorbed by the absorber so as not to emit it to the outside A gas laser oscillation device, comprising: a control device that performs control to perform the control.
JP20158997A 1997-07-28 1997-07-28 Gas laser oscillator Pending JPH1146033A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP20158997A JPH1146033A (en) 1997-07-28 1997-07-28 Gas laser oscillator
TW088221876U TW440089U (en) 1997-07-28 1998-07-28 Gas laser oscillator
US09/123,357 US6337869B1 (en) 1997-07-28 1998-07-28 Gas laser oscillator
US09/691,251 US6327295B1 (en) 1997-07-28 2000-10-19 Gas laser oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20158997A JPH1146033A (en) 1997-07-28 1997-07-28 Gas laser oscillator

Publications (1)

Publication Number Publication Date
JPH1146033A true JPH1146033A (en) 1999-02-16

Family

ID=16443569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20158997A Pending JPH1146033A (en) 1997-07-28 1997-07-28 Gas laser oscillator

Country Status (1)

Country Link
JP (1) JPH1146033A (en)

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