JPH1140696A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH1140696A
JPH1140696A JP19267097A JP19267097A JPH1140696A JP H1140696 A JPH1140696 A JP H1140696A JP 19267097 A JP19267097 A JP 19267097A JP 19267097 A JP19267097 A JP 19267097A JP H1140696 A JPH1140696 A JP H1140696A
Authority
JP
Japan
Prior art keywords
wiring board
connection wiring
integrated circuit
package
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP19267097A
Other languages
Japanese (ja)
Inventor
Toshiyuki Hori
利之 堀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP19267097A priority Critical patent/JPH1140696A/en
Publication of JPH1140696A publication Critical patent/JPH1140696A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve the reliability of a PGA(ball grid array) package when the package is mounted on a connecting wiring board with solder, by improving the heat characteristic (heat radiating property) and electrical characteristic of the PGA package and, in addition, dispersing heat. SOLUTION: In a semiconductor device, heat conductor layers 209 are respectively provided at the connecting section between a wiring board and an integrated circuit chip 203 and its periphery on one surface of the wiring board and on the other surface of the wiring board opposite to the surface connected to the chip 203 within such extents that the layers 209 have no electrical contact. The layers 209 are stuck to the wiring board with an epoxy- or siliconebased adhesive 205. It is preferable to mix silver in the adhesive 205 so as to improve the heat conductivity of the adhesive 205. When a higher heat radiating property and a higher electrical characteristic are required, the thicknesses of the heat conductor layers 209 are increased. Therefore, the heat property, electrical characteristic, and reliability of the semiconductor device are improved.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は集積回路などの電
子デバイスに関し、特に集積回路デバイスパッケージ用
として熱特性、電気特性を強化した低コスト高性能パッ
ケージに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic device such as an integrated circuit, and more particularly to a low-cost and high-performance package for an integrated circuit device package having enhanced thermal and electrical characteristics.

【0002】[0002]

【従来の技術】電子機器などの高機能化への要求から、
それらに使用する集積回路チップの入/出力端子は増大
の一途を辿っている。したがって、従来のQFP(クワ
ッドフラットパッケージ)を中心とするパッケージの周
辺に端子を配置するタイプでは、端子のサイズ、本数に
よりパッケージ自体を大きくせざるを得ない。そこで、
BGA(ボールグリッドアレイ)と呼ばれる入/出力端
子を下面に配置したパッケージが考案された。BGAは
パッケージの小型化、多ピン化を可能とし、同一のプリ
ント配線基板への高密度の実装が可能となる。
2. Description of the Related Art In response to demands for higher functionality of electronic devices,
The input / output terminals of the integrated circuit chips used for them are steadily increasing. Therefore, in a conventional type in which terminals are arranged around a package centered on a QFP (quad flat package), the package itself has to be enlarged according to the size and number of terminals. Therefore,
A package has been devised in which input / output terminals called BGA (ball grid array) are arranged on the lower surface. The BGA makes it possible to reduce the size of the package and increase the number of pins, and enables high-density mounting on the same printed wiring board.

【0003】また、BGAを用いると接続配線を短縮で
き、したがって電気的性能を高めることが可能となる。
しかしながら、BGAはパッケージの反り、および信頼
性がQFPと比較し劣るという弱点を有する。すなわ
ち、これらの弱点を除けば、その構造上非常に有用なパ
ッケージ構造であるが故に、前記の反り、信頼性の改善
が不可欠である。BGAの反り、信頼性、熱特性の改善
を狙って、M-BGA(メタル−ボールグリッドアレ
イ)と呼ばれる放熱板を有したパッケージ開発されてい
る。しかしながら、その構造ではの製造コスト(特に、
接続配線基板のコスト)が高く、低価格の電子機器など
に採用することは困難である。
[0003] When a BGA is used, the connection wiring can be shortened, so that the electrical performance can be improved.
However, BGAs have the disadvantages of package warpage and poorer reliability than QFP. That is, except for these weaknesses, the package structure is very useful in structure, so that the above-mentioned warpage and improvement in reliability are indispensable. In order to improve the warpage, reliability, and thermal characteristics of the BGA, a package having a heat radiating plate called an M-BGA (metal-ball grid array) has been developed. However, the manufacturing cost of the structure (especially,
The cost of the connection wiring board) is high, and it is difficult to adopt it for low-cost electronic equipment.

【0004】図1に集積回路チップ103を備える従来
技術のBGA100の断面図を示す。この従来技術のB
GA100は接続配線基板110には、集積回路チップ
103および、接着剤105の下に導体層が無い、また
は少ない。また同一の場所の接続配線基板110の反対
側にも導体層が無い、または少ない。したがって、パッ
ケージの反り、信頼性、熱特性などの面でBGAのパッ
ケージ構造を十分生かしきっていない。
FIG. 1 shows a cross-sectional view of a prior art BGA 100 having an integrated circuit chip 103. This prior art B
The GA 100 has no or few conductor layers under the integrated circuit chip 103 and the adhesive 105 on the connection wiring board 110. Also, there is no or few conductor layers on the opposite side of the connection wiring board 110 at the same location. Therefore, the BGA package structure is not fully utilized in terms of package warpage, reliability, thermal characteristics, and the like.

【0005】まず、導電性パターン106はその面積が
少なく、集積回路チップ103の発生した熱を十分逃が
すことはできない。また、BGAはその構造上片面封止
であり、絶縁封止材108と接続配線基板110との間
の熱膨張係数の差により、不均一な応力が発生しパッケ
ージの反りが発生する。この反りのためコプラナリティ
不良となり、プリント基板(図示していない)への実装
時に不具合となる。
First, the conductive pattern 106 has a small area, and the heat generated by the integrated circuit chip 103 cannot be sufficiently released. In addition, the BGA is a single-sided sealing due to its structure, and a difference in thermal expansion coefficient between the insulating sealing material 108 and the connection wiring board 110 causes non-uniform stress and warpage of the package. Due to this warp, a coplanarity defect occurs, which causes a problem when mounted on a printed circuit board (not shown).

【0006】また、BGAは構造上接続に基板を使用す
ることから、吸湿は避けられない。この吸湿によりはん
だ実装時の熱ストレスにより、吸湿した接続配線基板1
10特に接着剤105中の水分が気化爆発し、接着剤1
05と接続配線基板110との間に剥離を生じる。この
剥離が絶縁封止材108と接続配線基板110との界面
を伝わり、集積回路チップ103と接続配線基板110
上の導電性配線パターン107との電気的接続のための
接続細線104の断線を引き起こす。
[0006] Further, since the BGA uses a substrate for connection due to its structure, moisture absorption is inevitable. The connection wiring board 1 that has absorbed moisture due to thermal stress during solder mounting due to the moisture absorption.
10 In particular, the moisture in the adhesive 105 evaporates and explodes, and the adhesive 1
Separation occurs between the substrate 05 and the connection wiring substrate 110. This peeling is transmitted along the interface between the insulating sealing material 108 and the connection wiring board 110, and the integrated circuit chip 103 and the connection wiring board 110 are separated.
The connection thin wire 104 for electrical connection with the upper conductive wiring pattern 107 is disconnected.

【0007】[0007]

【発明が解決しようとする課題】したがって、本発明に
目的は優れた放熱性を有し、パッケージの反りを低減し
信頼性、電気特性に優れた低価格BGAを提供すること
である。
SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a low-cost BGA which has excellent heat dissipation, reduces warpage of a package, and has excellent reliability and electrical characteristics.

【0008】[0008]

【課題を解決するための手段】本発明によると、熱伝導
率を向上させた低価格BGAを含むパッケージ封止集積
回路デバイスが得られる。この発明の一つの実施例であ
るBGAパッケージ封止集積回路デバイスは、少なくと
も一つの導体線材料層および、少なくとも一つの絶縁性
材料層を表面あるいは内部に形成した接続配線基板を含
む。この接続配線基板の第一および、第二の表面のう
ち、第二の表面に前記導体線材料層の少なくとも一つと
電気的に接続した複数のコンタクトを設ける。これらコ
ンタクトはBGAパッケージをプリント配線基板に電気
的に接続するためのはんだボールから成る。
According to the present invention, there is provided a packaged integrated circuit device including a low-cost BGA with improved thermal conductivity. A BGA package encapsulated integrated circuit device according to one embodiment of the present invention includes a connection wiring substrate having at least one conductor wire material layer and at least one insulating material layer formed on the surface or inside. A plurality of contacts electrically connected to at least one of the conductor wire material layers are provided on the second surface of the first and second surfaces of the connection wiring board. These contacts consist of solder balls for electrically connecting the BGA package to the printed wiring board.

【0009】導電性材料層を接続配線基板の第一表面と
その裏でパッケージの外部に露出あるいは内部に形成し
た第二表面とを有する。ただし、前記接続配線基板の第
一の表面の一部に電気的コンタクトを有しない範囲で導
体層を設ける必要がある。この導電性材料層は接続配線
基板の前記第一の表面および、第二表面と直線的にに共
膨張する。また、前記接続配線基板の前記第一表面の導
体層、前記集積回路チップおよび、前記集積回路チップ
と前記接続配線基板の内部または表面に形成した前記少
なくとも一つの導体線層と、その間を接続する前記導電
性細線が絶縁封止材で封止されているパッケージで、接
続配線基板の第一表面の導電性材料層と前記接続配線基
板第二表面の導電性材料層は放熱穴を設けることで熱
的、電気的に接続してある。前記接続配線基板の前記第
一表面の前記導体層に接着剤により集積回路チップを配
置し、前記集積回路チップと前記接続配線基板の内部ま
たは表面に形成した前記少なくとも一つの導体線層との
間に前記接続手段が複数の導電性細線から成るパッケー
ジ封止集積回路デバイス。また、前記接続配線基板の前
記第一表面の導体層、前記集積回路チップおよび、前記
集積回路チップと前記接続配線基板の内部または表面に
形成した前記少なくとも一つの導体線層と、その間を接
続する前記導電性細線が絶縁封止材で封止されているパ
ッケージ封止集積回路デバイス。
A conductive material layer has a first surface of the connection wiring board and a second surface formed on the back of the first surface, which is exposed to the outside or formed inside the package. However, it is necessary to provide a conductor layer in a range that does not have an electrical contact on a part of the first surface of the connection wiring board. This conductive material layer linearly co-expands with the first surface and the second surface of the connection wiring board. Further, the conductor layer on the first surface of the connection wiring board, the integrated circuit chip, and the at least one conductor wire layer formed inside or on the surface of the integrated circuit chip and the connection wiring board are connected to each other. In the package in which the conductive thin wires are sealed with an insulating sealing material, the conductive material layer on the first surface of the connection wiring board and the conductive material layer on the second surface of the connection wiring board are provided with heat dissipation holes. Thermally and electrically connected. An integrated circuit chip is disposed on the conductor layer on the first surface of the connection wiring board by an adhesive, and between the integrated circuit chip and the at least one conductor wire layer formed inside or on the surface of the connection wiring board. A package-sealed integrated circuit device wherein said connection means comprises a plurality of conductive wires. Further, the conductor layer on the first surface of the connection wiring board, the integrated circuit chip, and the at least one conductor wire layer formed inside or on the surface of the integrated circuit chip and the connection wiring board are connected to each other. A package-sealed integrated circuit device in which the conductive thin wire is sealed with an insulating sealing material.

【0010】[0010]

【発明の実施の形態】図2は集積回路チップ203およ
び、熱伝導体(導電性材料層)209を含む、本発明の
BGAパッケージ200の断面図である。集積回路チッ
プ203はチップコンタクトパット220を設けた第一
の表面を有する。コンタクトパッド220は集積回路チ
ップ203から外部への電気的接続を可能とする。集積
回路チップ203は、接着剤205で熱伝導体209に
接続されている。前記接着剤205は、エポキシあるい
はシリコーン系の接着剤である。好ましくは熱伝導性を
向上させる為に、銀を含めた方がよい。集積回路チップ
203は、前記接着剤205で接続し、用途によっては
シート/フィルムを使用することもある。
FIG. 2 is a cross-sectional view of a BGA package 200 of the present invention including an integrated circuit chip 203 and a thermal conductor (conductive material layer) 209. FIG. The integrated circuit chip 203 has a first surface on which a chip contact pad 220 is provided. The contact pad 220 enables an electrical connection from the integrated circuit chip 203 to the outside. The integrated circuit chip 203 is connected to the heat conductor 209 by an adhesive 205. The adhesive 205 is an epoxy or silicone adhesive. Preferably, silver is included to improve the thermal conductivity. The integrated circuit chips 203 are connected by the adhesive 205, and a sheet / film may be used depending on the application.

【0011】熱伝導体(導電性材料層)209は、接続
配線基板上に有する導体線層207と同じ厚さであれ
ば、接続配線基板の作成も従来と同様であり容易である
が、更なる放熱、電気特性が必要であれば熱伝導体20
9を厚くすればよい。
If the heat conductor (conductive material layer) 209 has the same thickness as the conductor wire layer 207 provided on the connection wiring board, the connection wiring board can be formed in the same manner as in the conventional case, but it is easy. If heat radiation and electrical characteristics are required, the heat conductor 20
9 may be made thicker.

【0012】前記構造をとることで電気特性も有利にな
る。ICの動作電圧が5Vの場合はグランド側マージン
が電源側マージンより極端に小さい。したがって、パッ
ケージの電気特性改善にはグランド側の構造が非常に重
要である。電源電圧が5Vから3.3Vに降圧された場
合には電源側も同じ考えで処理すれば良い。出力バッフ
ァのON/OFFに伴いエネルギが流れるため、配線経
路全体の実行インダクタンスにより電圧降下が発生す
る。また、隣り合う配線との電磁誘導により、クロスト
ークが発生する。これらのノイズが電圧降下に乗り大き
な電圧となる。これが受信バッファのノイズマージンを
超えると信号の誤動作となってしまう。したがって、ノ
イズマージンを大きくする必要がある。このためパッケ
ージの電気容量を大きくする必要がある。
By adopting the above-mentioned structure, the electric characteristics become advantageous. When the operating voltage of the IC is 5 V, the margin on the ground side is extremely smaller than the margin on the power supply side. Therefore, the structure on the ground side is very important for improving the electrical characteristics of the package. When the power supply voltage is reduced from 5 V to 3.3 V, the power supply side may be processed in the same manner. Since energy flows as the output buffer is turned on and off, a voltage drop occurs due to the effective inductance of the entire wiring path. In addition, crosstalk occurs due to electromagnetic induction between adjacent wirings. These noises take on the voltage drop and become large voltages. If this exceeds the noise margin of the receiving buffer, a signal malfunction will occur. Therefore, it is necessary to increase the noise margin. Therefore, it is necessary to increase the electric capacity of the package.

【0013】平行平板キャパシターの電気容量は次の式
で求める。
The capacitance of the parallel plate capacitor is obtained by the following equation.

【0014】C=εS/d S:平板の面積、d:平行平板の距離、ε:固有の値 上記式から明らかなように、Cを大きくするためにはS
を大きくする必要がある。
C = εS / d S: area of flat plate, d: distance of parallel flat plate, ε: specific value As is apparent from the above equation, in order to increase C, S
Need to be larger.

【0015】また、接続配線基板の両面に導体層を配置
することで、はんだ実装時の熱ストレス、パッケージの
反りにも強くなる。
By arranging the conductor layers on both sides of the connection wiring board, thermal stress at the time of solder mounting and warpage of the package are increased.

【0016】[0016]

【発明の効果】前記の通り、従来の製造工程を踏襲しつ
つ、微細リードピッチプラスチックパッケージの表面実
装時の困難さの回避、パッケージの小型化、高密度実装
を可能にしたこと。接続線の短縮による電気特性の改
善。また接続配線基板の両面に直線的な共膨張率を有す
る導電体を設けていることから優れた熱特性、および、
パッケージの反りを有する。さらに、はんだ実装時の熱
ストレスによるパッケージのフクレに対し、導電体(金
属など)は設けているため熱の分散を促進することで、
熱ストレスにも強く信頼性も向上する。
As described above, it is possible to avoid difficulty in surface mounting of a fine lead pitch plastic package, reduce the size of the package, and achieve high-density mounting while following the conventional manufacturing process. Improve electrical characteristics by shortening connection lines. In addition, since the conductor having a linear co-expansion coefficient is provided on both surfaces of the connection wiring board, excellent thermal characteristics, and
Has package warpage. Furthermore, since the conductor (metal etc.) is provided for the blister of the package due to thermal stress at the time of solder mounting, it promotes heat dispersion,
It is also resistant to thermal stress and its reliability is improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】従来技術によるBGAパッケージ100の断面
図。
FIG. 1 is a cross-sectional view of a BGA package 100 according to the related art.

【図2】本発明のBGAパッケージ200の断面図。FIG. 2 is a sectional view of a BGA package 200 of the present invention.

【符号の説明】[Explanation of symbols]

100 従来タイプBGAパッケージ 103、203 集積回路チップ 104 導電性細線 105、205 接着剤 106 導電性パターン 108 絶縁封止材 110 接続配線基板 200 BGAパッケージ 209 導電体 220 チップコンタクトパッド DESCRIPTION OF SYMBOLS 100 Conventional type BGA package 103, 203 Integrated circuit chip 104 Conductive thin wire 105, 205 Adhesive 106 Conductive pattern 108 Insulation sealing material 110 Connection wiring board 200 BGA package 209 Conductor 220 Chip contact pad

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】パッケージ封止集積回路デバイスであっ
て、少なくとも一つの導体線材料層と絶縁層とをその内
部または表面に含む接続配線基板であって、第一の表面
とその表面の反対側にあって、前記の少なくとも一つの
導体線材料層に電気的に接続された複数の電気的コンタ
クトを有する第二の表面とを有する接続配線基板と、前
記接続配線基板の前記第一の表面とその第一の表面の反
対側にあって前記パッケージ封止集積回路デバイスの外
部に露出した第二の表面とを備え、前記配線基板の内部
または表面に形成された前記少なくとも一つの導体線層
と前記集積回路チップとの間に電気的接続を有する半導
体装置。
1. A packaged integrated circuit device, comprising: a connection wiring substrate including at least one conductor wire material layer and an insulating layer inside or on a surface thereof, wherein the first surface is opposite to the surface. A connection wiring board having a second surface having a plurality of electrical contacts electrically connected to the at least one conductor wire material layer, and the first surface of the connection wiring board A second surface which is opposite to the first surface and which is exposed to the outside of the package-sealed integrated circuit device, wherein the at least one conductor wire layer formed inside or on the surface of the wiring board; A semiconductor device having an electrical connection with the integrated circuit chip.
【請求項2】前記接続配線基板の第一の表面の一部に電
気的コンタクトを有しない範囲で導体層を設けた請求項
1記載の半導体装置。
2. The semiconductor device according to claim 1, wherein a conductive layer is provided on a part of the first surface of the connection wiring board so as not to have an electrical contact.
【請求項3】前記接続配線基板の第二の表面の一部に電
気的コンタクトを有しない範囲で導体層を設けた請求項
1記載の半導体装置。
3. The semiconductor device according to claim 1, wherein a conductor layer is provided on a part of the second surface of the connection wiring board so as not to have an electrical contact.
【請求項4】前記接続配線基板の第一あるいは第二表面
およびその両表面に電気的コンタクトを有しない範囲で
導体層を設けた請求項1記載の半導体装置。
4. The semiconductor device according to claim 1, wherein a conductive layer is provided on the first or second surface of the connection wiring substrate and on both surfaces thereof as far as there is no electrical contact.
【請求項5】前記接続配線基板の前記第一表面の前記導
体層に接着剤により集積回路チップを配置し、前記集積
回路チップと前記接続配線基板の内部または表面に形成
した前記少なくとも一つの導体線層との間に前記接続手
段が複数の導電性細線から成る請求項4記載の半導体装
置。
5. An integrated circuit chip is disposed on the conductor layer on the first surface of the connection wiring board with an adhesive, and the at least one conductor formed inside or on the surface of the integrated circuit chip and the connection wiring board. 5. The semiconductor device according to claim 4, wherein said connection means comprises a plurality of conductive thin wires between the wire layer.
【請求項6】前記接続配線基板の前記第一表面の導体
層、前記集積回路チップおよび、前記集積回路チップと
前記接続配線基板の内部または表面に形成した前記少な
くとも一つの導体線層と、その間を接続する前記導電性
細線が絶縁封止材で封止されている請求項5記載の半導
体装置。
6. The conductor layer on the first surface of the connection wiring board, the integrated circuit chip, and the at least one conductor wire layer formed inside or on the surface of the integrated circuit chip and the connection wiring board, and 6. The semiconductor device according to claim 5, wherein the conductive thin wire connecting the first and second wires is sealed with an insulating sealing material.
JP19267097A 1997-07-17 1997-07-17 Semiconductor device Withdrawn JPH1140696A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19267097A JPH1140696A (en) 1997-07-17 1997-07-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19267097A JPH1140696A (en) 1997-07-17 1997-07-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH1140696A true JPH1140696A (en) 1999-02-12

Family

ID=16295098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19267097A Withdrawn JPH1140696A (en) 1997-07-17 1997-07-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH1140696A (en)

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