JPH11345773A - Manufacture of hyperfine periodic structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a hyperfine periodic structure for batch manufacturing the structure periodically arranged two-dimensionally on the surface of a substrate with adequately accuracy in horizontal and vertical directions. SOLUTION: This method for manufacturing a hyperfine period structure comprises the steps of applying the surface of a substrate 7 with a material gas, the surface of the substrate 7 is irradiated with any of a coherent radiant ray, laser beam or coherent electron beam from a plurality of directions to form a two-dimensional interference image on the surface of the substrate 7, and repeating the previous steps. Thus, a material obtained by reacting the gas is selectively deposited at the position of the interference image, while controlling its thickness in atomic layer units.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an ultrafine periodic structure two-dimensionally and periodically arranged.

[0002]

2. Description of the Related Art The formation of an atomic-level ultrafine structure two-dimensionally periodically arranged on a substrate is indispensable for realizing a next-generation integrated circuit incorporating an atomic-level device. In the thickness direction, atomic layer epitaxy,
Processes controlled in units of one atomic layer, such as atomic layer etching, are possible. Atomic layer epitaxy is achieved by alternately supplying two types of source gases, or
This is achieved by alternately performing the supply of the source gas and the heat or photo-elimination reaction.

When two kinds of source gases are supplied alternately,
Light may be irradiated together with the supply of one raw material gas. Atomic layer etching is realized by alternately performing the introduction of a reactive gas and the irradiation of energetic particles such as ions, electrons, and photons. However, since it is impossible to control the structure in the horizontal direction by atomic layer epitaxy or atomic layer etching, it has to be combined with another method.

[0004] Today, electron beam lithography for directly drawing using an electron beam has been widely used in order to control a horizontal structure of a nanometer size. If this method is used to the limit, fine patterning of about 10 nanometers is possible. However, there is a problem that it takes a very long time to perform drawing one by one by scanning the electron beam.

[0005] Instead of conventional optical lithography, lithography using X-rays has also been proposed. Since this method is a batch exposure, it solves a time problem, but since it is a transfer technique, there is a problem that the accuracy of a pattern is limited by a mask.

Other methods for realizing an ultrafine structure at the atomic level include a method using an atomic step formed on a slightly inclined crystal surface and a method for performing selective growth on a facet surface formed using a mask pattern. However, there are problems that the position and size at the atomic level cannot be determined accurately and that an arbitrary shape cannot be formed.

Further, a method has been proposed in which atoms are manipulated or processed using a probe of a scanning tunneling microscope or an atomic force microscope. If this method is used, accurate processing at the atomic level is possible, but there is a problem that productivity is much lower than that of the electron beam exposure method.

[0008]

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and has a problem in that the surface of the substrate is not covered by a two-dimensional structure.
It is an object of the present invention to provide a method of manufacturing an ultrafine periodic structure in which ultrafine periodic structures that are dimensionally arranged periodically are collectively manufactured with sufficient accuracy in the horizontal and vertical directions.

[0009]

According to a first aspect of the present invention, there is provided a method for manufacturing a two-dimensionally periodically arranged ultrafine periodic structure, comprising irradiating a source gas to a substrate surface. Irradiating the substrate surface with any of coherent radiation light, laser light, or a coherent electron beam (hereinafter, these three types may be collectively referred to as a coherent beam) from a plurality of directions.
By alternately repeating forming a two-dimensional interference image and forming a two-dimensional interference image, the material obtained by the reaction of the source gas at the position of the two-dimensional interference image is selectively controlled while controlling the thickness in atomic layer units. It is characterized by being deposited.

That is, in the present invention, atomic layer epitaxy is performed by utilizing a deposition reaction caused by a direct interaction between a two-dimensional interference image of a coherent beam and a source gas. Deposition does not occur with the source gas alone, but the deposition according to the method of the present invention is possible when the conditions of the system are adjusted so that the material is deposited in atomic layer units by alternately repeating the supply of the source gas and the irradiation of the coherent beam. become. In that case, first, the source gas is irradiated, and the source gas is adsorbed on the substrate surface in a monomolecular layer.

Next, a two-dimensional interference image is formed by irradiating the substrate surface with a coherent beam from a plurality of directions. This means that the positions of the two-dimensionally periodically arranged points forming the interference image are collectively irradiated with the coherent beam. If the wavelength of the coherent beam is reduced to the atomic level, the period of the arrangement can be reduced to the atomic level, and sufficient accuracy can be provided. With the assistance of the coherent beam, the molecules adsorbed on the monolayer are completely decomposed, and the above-mentioned material can be selectively deposited simultaneously at the positions of the periodically arranged points constituting the two-dimensional interference image. FIG. 8 shows a cross section of the material when three cycles of atomic layer epitaxy are performed by the present method.

According to a second aspect of the present invention, there is provided a method of manufacturing a two-dimensionally periodically arranged ultrafine periodic structure, which comprises irradiating a substrate surface with a source gas and generating a coherent radiation, a laser beam or a coherent electron beam. Irradiating the substrate surface while individually modulating each phase from a plurality of directions, and moving a two-dimensional interference image formed on the substrate surface in parallel to draw an ultra-fine pattern. By repeating, a material obtained by the reaction of the source gas is selectively deposited at the position of the ultrafine pattern while controlling the thickness in atomic layer units.

That is, as in the case of the first aspect, deposition does not occur with the source gas alone, but the material is deposited in atomic layer units by alternately repeating the supply of the source gas and the irradiation of the coherent beam. After adjusting the conditions of
By forming a two-dimensional interference image of the coherent beam on the substrate surface after the supply of the source gas, the material of the atomic layer can be selectively deposited simultaneously at the positions of the points constituting the interference image. In that case, if the positions of the points constituting the interference image are moved at the same time and an ultrafine pattern is drawn, as a result, the material of the above atomic layer is simultaneously deposited at the positions of the periodically arranged ultrafine patterns. Can be.

According to a third aspect of the present invention, there is provided a method for manufacturing a two-dimensionally periodically arranged ultrafine periodic structure, comprising: irradiating a first source gas to a substrate surface; Irradiating the substrate surface with any of coherent radiation, laser light or coherent electron beam from a plurality of directions while irradiating the substrate to form a two-dimensional interference image on the substrate surface, and alternately By doing
A material obtained by reacting the first and second source gases at the position of the two-dimensional interference image is selectively deposited while controlling the thickness in units of molecular layers.

That is, although deposition does not occur only by alternately supplying the above two kinds of source gases, the material is deposited in units of molecular layers by simultaneously irradiating a coherent beam when supplying the second source gas. After the system conditions are adjusted so that the two-dimensional interference image of the coherent beam is formed on the substrate surface simultaneously with the supply of the second source gas, the positions of the points constituting the interference image are simultaneously formed. The first
And the material of the molecular layer formed by the reaction of the second source gas can be selectively deposited. Also in this case, the first raw material gas is previously adsorbed on the substrate surface in a monomolecular layer and then irradiated with the second raw material gas and a coherent beam to deposit the raw material on the substrate surface. It can be controlled precisely in units.

According to a fourth aspect of the present invention, there is provided a method for manufacturing a two-dimensionally periodically arranged ultrafine periodic structure, comprising: irradiating a substrate surface with a first source gas; The substrate surface is irradiated with any one of coherent radiation, laser light, or coherent electron beam while modulating each phase individually from a plurality of directions, and a two-dimensional interference image formed on the substrate surface is moved in parallel. And alternately repeating the drawing of an ultrafine pattern, thereby selectively selecting the material formed by the reaction of the first and second source gases at the position of the ultrafine pattern, and changing the thickness of the material to a molecular layer. It is characterized in that deposition is performed while controlling in units.

That is, as in the case of the third aspect, the deposition does not occur only by alternately supplying the two kinds of source gases, but the coherent beam is irradiated simultaneously with the supply of the second source gas. Thus, an interference image is formed by adjusting the system conditions so that the material is deposited in units of molecular layers, forming a two-dimensional interference image of the coherent beam on the substrate surface after supplying the source gas, and forming the interference image. Since the material of the molecular layer can be selectively deposited simultaneously at the positions of the points, if the positions of the points constituting the interference image move at the same time and draw an ultrafine pattern, as a result, periodic arrangement The material of the molecular layer can be simultaneously deposited at the positions of the respective ultrafine patterns.

According to a fifth aspect of the present invention, there is provided a method for manufacturing a two-dimensionally periodically arranged ultrafine periodic structure, comprising: irradiating a reactive gas onto a substrate surface; coherent radiation, laser light, or coherent radiation; By irradiating any one of the electron beams onto the substrate surface from a plurality of directions to form a two-dimensional interference image formed on the substrate surface, the position of the two-dimensional interference image is alternately repeated. It is characterized by selectively etching a substrate material and controlling the depth in atomic layer units.

That is, etching does not occur with a reactive gas alone, but the system conditions are set so that the substrate material is etched in atomic layer units by alternately repeating the supply of the reactive gas and the irradiation of the coherent beam. After preparing, after supplying the reactive gas, the coherent beam 2
By forming a two-dimensional interference image on the substrate surface, it is possible to simultaneously and selectively etch the substrate material of the atomic layer at the position of each point constituting the interference image. Also in this case, since the reactive gas is preliminarily adsorbed on the substrate surface in the atomic layer state and then the coherent beam is irradiated, the etching depth can be accurately controlled in atomic layer units.

The method of manufacturing the ultrafine periodic structure two-dimensionally periodically arranged according to the manufacturing method 6 of the present invention includes irradiating the substrate surface with a reactive gas, coherent radiation light,
Irradiating the substrate surface with either laser light or a coherent electron beam from a plurality of directions, and moving a two-dimensional interference image formed on the substrate surface in parallel to draw an ultrafine pattern; This is characterized in that the substrate material at the position of the ultrafine pattern is selectively etched and the depth is controlled in atomic layer units.

That is, as in the case of the manufacturing method 5, etching does not occur with a reactive gas alone, but by alternately repeating the supply of the reactive gas and the irradiation of the coherent beam, the substrate material is reduced in atomic layer units. After adjusting the system conditions so that it is etched, supply the reactive gas, and then form a two-dimensional coherent beam interference image on the substrate surface, so that the atoms at the positions of the points constituting the interference image are formed. Since the substrate material of the layer can be selectively etched all at once, the positions of the points that make up the interference image move all at once and draw an ultrafine periodic structure. The substrate material of the atomic layer at the position can be selectively etched all at once.

[0022]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an apparatus for manufacturing an ultrafine periodic structure used in the present embodiment. This apparatus includes a coherent beam supply device 1, a gas supply device 2, a substrate exchange chamber 3, and a reaction chamber 4. The coherent beam supply device 1 supplies a coherent beam to the reaction chamber 4, and in the example of FIG. The room 4 is supplied. When a laser beam or an electron beam is used as a coherent beam, a coherent beam supply device is configured using a laser light source or an electron beam source, respectively.

The gas supply device 2 supplies a raw material gas and an etching gas to the reaction chamber 4. Substrate exchange room 3
Is provided for carrying the substrate 7 into the reaction chamber 4 without breaking the vacuum of the reaction chamber 4. The reaction chamber 4 and the substrate exchange chamber 3 are separated by a gate valve 8, and the substrate exchange chamber 3 and the reaction chamber 4 are provided with independent vacuum evacuation devices 9 and 10, respectively.

The reaction chamber 4 is always maintained in a vacuum by a vacuum exhaust device 10. The substrate 7 is mounted on the substrate holder 11 in the reaction chamber 4. In the example of FIG. 1, a substrate heater 12 is mounted below the substrate holder 11, and heats the substrate 7 as necessary. Note that, instead of providing the substrate heater 12, heating may be performed by irradiating infrared rays or the like from a position away from the substrate holder 11. The source gas or the etching gas supplied to the reaction chamber 4 from the gas supply device 2 is applied to the substrate 7 from the gas nozzle 13.

The radiated light introduced into the reaction chamber 4 is split into four using the half mirrors 14 to 16 in the example of FIG. The phase of each of the divided four emitted lights is modulated by phase modulators 17 to 20, respectively.
The light is applied to the substrate 7 from four directions via mirrors 21 to 24. In addition, the mirror 2 is used to change the direction of the emitted light.
5 to 27 are arranged. If the direction of irradiating the substrate 7 with the radiated light is always constant, the half mirrors 14 to 1
6, the phase modulators 17 to 20, and the mirrors 21 to 27 may be located outside the reaction chamber 4.

Here, the phase modulators 17 to 20 are provided for the emitted light in four directions, respectively, but the phase modulator can be omitted in one of the four directions. Further, if the number of directions in which the radiated light is irradiated on the substrate 7 is three or more in accordance with the structure of the two-dimensional interference image to be formed,
In other than four directions, an appropriate number of half mirrors, phase modulators and mirrors are arranged according to the number of directions.

For example, when the substrate 7 is irradiated with radiated light from four directions to form a two-dimensional interference image having a square lattice structure as shown in FIG. 2, as shown in FIG. The directions A to D are set to have an angular interval of 90 ° when viewed from above. The inclination angles of the emitted light in the four directions in the vertical plane are made equal to each other, and the value of the inclination angle in the vertical plane corresponds to the wavelength of the emitted light and the periodic interval of the ultra-fine pattern to be manufactured. Is set.

When the substrate 7 is irradiated with radiated light from three directions to form a two-dimensional interference image having a hexagonal lattice structure as shown in FIG. 4, as shown in FIG. The three directions E to G are set to have an angular interval of 120 ° when viewed from above. Further, the inclination angles of the three directions of radiation in the vertical plane are made equal to each other, and the value of the inclination angle in this vertical plane corresponds to the wavelength of the radiation and the period interval of the ultra-fine pattern to be manufactured. Is set.

In the present invention, the structure of the two-dimensional interference image that can be formed on the substrate 7 is not limited to the above-described square lattice or hexagonal lattice. It is possible to form a two-dimensional interference image having an arbitrary periodic structure by changing the number of directions in which the radiated light is emitted, the angular interval viewed from above, and the inclination angle in the vertical plane.

When the two-dimensional interference image having the structure of the square lattice is moved in parallel in the X direction in FIG. 2, the (initial) phase θ _A of the emitted light in the A direction in FIG. Increase the (initial) phase θ _B of the emitted light. When the two-dimensional interference image is moved in parallel in the Y direction in FIG. 2, the (initial) phase θ _C of the emitted light in the C direction is reduced, and at the same time,
The (initial) phase θ _D of the emitted light in the D direction is increased. The distance of parallel movement in each direction is proportional to the amount of phase change,
In order to move the interference image in parallel by the distance L depicted in FIG. 2, the phase may be changed by 2π.

In the examples of FIGS. 2 and 3, the four waves are A: φ _A (x, y) = kx + θ _A B: φ _B (x , Y) = − kx + θ _B C: φ _C (x, y) = ky + θ _C D: φ _D (x, y) = − ky + θ _D. Where k = 2π / L, θ _A , θ
_B , θ _C and θ _D are values controlled by the phase modulator.

In this case, φ _A (x, y) to φ _D (x, y)
y) are equal to each other, for example, φ _A (x, y) = φ _B (x, y) = φ _C (x, y) = φ _D (x, y) = 0... Form an interference image. Therefore, in order to form an interference image at the position (x, y),
Above, the equation may be determined _{kx + θ A = -kx + θ} B = ky + θ C = -ky + θ D = 0 so that ...... θ _A to theta _D, when solving equation, θ _A = -θ _B = - kx θ _C = −θ _D = −ky, and θ _{A to} θ _D may be changed to satisfy this equation.

For example, as shown in FIG. 6, by modulating the phases θ _{A to} θ D in the directions _{A to D} , a rectangular ultrafine pattern P periodically arranged as shown in FIG. 7 can be obtained.
Even when only three phase modulators are mounted, the two-dimensional interference image can be moved in parallel in the X and Y directions, but the phase of the emitted light in three directions in which the phase modulators are mounted changes. It becomes more complicated. For example, the phase θ _A of the wave in the direction _A is not modulated, and the phase θ in the directions B to D is not modulated.
_When modulating _{B to} θ _D , in the above equation, φ
_A (x, y) is not necessarily a = 0, φ _A (x,
y) = φ _B (x, y) = φ _C (x, y) = φ _D (x, y
y), that is, kx + θ _A = −kx + θ _B in the above equation
= Ky + θ _C = −ky + θ _D can be solved, and the solution is as follows: θ _B = 2 kx + θ _A θ _C = kx−ky + θ _A θ _D = kx + ky + θ _A. Therefore, θ _{B to} θ _D may be changed so as to satisfy the formula. In the case of a two-dimensional interference image having a hexagonal lattice or another structure, it can be moved in parallel by modulating the phase.

[0034]

An embodiment of the present invention will be described. As the first and second embodiments of the present invention, irradiation of disilane and irradiation of emitted light from four directions were alternately repeated while maintaining the temperature of the silicon substrate 7 at 430 ° C.
As a result, silicon was selectively deposited at a position of each point constituting a square lattice, which is a two-dimensional interference image of emitted light, at a deposition rate of 0.6 Å / cycle, and an ultrafine periodic structure was formed. Further, radiation was irradiated from four directions while modulating the phase as shown in FIG. As a result, silicon was deposited at the positions of the rectangular ultra-fine patterns P arranged periodically as shown in FIG.

According to the third and fourth embodiments of the present invention, the argon laser is irradiated from four directions while irradiating arsine and irradiating triethylgallium while maintaining the temperature of the substrate 7 made of gallium arsenide at 350 ° C. Light irradiation was alternately repeated. As a result, at the position of each point constituting a square lattice, which is a two-dimensional interference image of argon laser light,
Gallium arsenide was selectively deposited at a deposition rate of 3 angstroms / cycle, forming an ultrafine periodic structure. Further, radiation was irradiated from four directions while modulating the phase as shown in FIG. As a result, gallium arsenide was deposited at the positions of the rectangular ultrafine patterns P arranged periodically as shown in FIG.

According to the fifth and sixth embodiments of the present invention, while keeping the temperature of the substrate 7 made of gallium arsenide at room temperature, irradiation of chlorine gas and irradiation of ultraviolet laser light from four directions are alternately performed. Repeated. As a result, gallium arsenide was selectively deposited at a position of each point constituting a square lattice, which is a two-dimensional interference image of the ultraviolet laser light, at a deposition rate of 2 angstroms / cycle, and an ultrafine periodic structure was formed. Further, when radiated light was irradiated from four directions while modulating the phase as shown in FIG. 6, gallium arsenide was deposited at the position of the rectangular ultrafine pattern P periodically arranged as shown in FIG.

In the above embodiment, the case where a rectangular ultrafine pattern is formed has been described. However, the shape of the ultrafine pattern may be any shape other than a rectangular shape, and may be any shape other than the rectangular shape. Then, the modulation pattern of the phase of the coherent beam in each direction may be changed. Also, the size of the ultrafine pattern is not particularly limited, and the modulation width of the phase may be set according to the size of the ultrafine pattern.

[0038]

As described above, according to the first aspect of the present invention,
According to the method for producing a two-dimensionally periodically arranged hyperfine periodic structure, the method of irradiating the substrate surface with the source gas and generating any of coherent radiation, laser light, or coherent electron beam from a plurality of directions Irradiating the substrate surface to form a two-dimensional interference image on the substrate surface;
Alternately, a material formed by the reaction of the source gas at the position of the two-dimensional interference image can be selectively deposited while controlling the thickness in atomic layer units,
Thereby, it is possible to collectively manufacture an ultrafine periodic structure whose thickness is controlled in atomic layer units and two-dimensionally periodically arranged. That is, when the raw material gas is irradiated on the substrate surface, the raw material gas is adsorbed on the substrate surface in a molecular layer. Then, when the coherent beam is irradiated, the coherent beam interacts with only the raw material gas adsorbed on the substrate surface in the molecular layer. Therefore, a material is deposited for each atomic layer, so that an ultrafine periodic structure whose horizontal size is not only ultrafine but whose vertical size is controlled at the atomic layer level can be formed.

According to the method for producing a two-dimensionally periodically arranged ultrafine periodic structure according to the second aspect of the present invention, it is possible to irradiate the substrate surface with the raw material gas, to emit coherent radiation, laser light or coherent electrons. Irradiating the substrate surface with any of the beams while individually modulating the respective phases from a plurality of directions, and moving the two-dimensional interference image formed on the substrate surface in parallel to draw an ultrafine pattern of a desired shape And by repeating alternately, selectively the material formed by reacting the source gas at the position of the ultrafine pattern,
In addition, it is possible to deposit while controlling the thickness in atomic layer units, thereby producing a desired ultra-fine periodic structure in which the thickness is controlled in atomic layer units and two-dimensionally periodically arranged. can do.

According to a third aspect of the present invention, there is provided a method for manufacturing a two-dimensionally periodically arranged ultrafine periodic structure, wherein a source gas is irradiated onto a substrate surface and another type of source gas is applied to the substrate surface. Irradiating the substrate surface with any of coherent radiation, laser light or coherent electron beam from a plurality of directions while irradiating the substrate surface to form a two-dimensional interference image on the substrate surface. By repeating, a material obtained by the reaction of the two kinds of source gases can be selectively deposited at the position of the two-dimensional interference image while controlling the thickness in units of molecular layers. It is possible to collectively manufacture an ultrafine periodic structure in which is controlled in units of molecular layers and two-dimensionally periodically arranged.

According to the method of manufacturing a two-dimensionally periodically arranged ultrafine periodic structure according to the fourth aspect of the present invention, it is possible to irradiate the substrate surface with a source gas and to irradiate the source gas with another type of source gas. Irradiating the substrate surface with any of coherent radiation light, laser light, or coherent electron beam while individually modulating each phase from a plurality of directions, and forming a two-dimensional interference image formed on the substrate surface in parallel. By moving and drawing an ultra-fine pattern of a desired shape alternately, a material formed by the reaction of the two kinds of source gases at the position of the ultra-fine pattern is selected, and the thickness of the material is reduced. Deposition can be controlled in layers, so that the thickness is controlled in units of molecular layers and
An ultrafine periodic structure of a desired shape that is dimensionally arranged periodically can be manufactured at a time.

According to the method of manufacturing a two-dimensionally periodically arranged ultrafine periodic structure according to the fifth aspect of the present invention, irradiating the substrate surface with a reactive gas, coherent radiation light, laser light or Irradiating any one of the coherent electron beams onto the substrate surface from a plurality of directions to form a two-dimensional interference image formed on the substrate surface is alternately repeated, whereby the two-dimensional interference image The substrate material at a position can be selectively etched while controlling the depth in atomic layer units, whereby the depth is controlled in atomic layer units and the two-dimensionally arranged ultra-fine periodicity The structure can be manufactured collectively.

According to the method of manufacturing a two-dimensionally periodically arrayed ultrafine periodic structure according to the present invention, it is possible to irradiate the substrate surface with a reactive gas, to emit coherent radiation light, laser light or Irradiating the substrate surface with any of coherent electron beams from a plurality of directions, and moving a two-dimensional interference image formed on the substrate surface in parallel to draw an ultrafine pattern of a desired shape, and alternately Thereby, the substrate material at the position of the ultrafine pattern can be selectively etched while controlling the depth in atomic layer units, whereby the depth is controlled in atomic layer units, and the two-dimensional An ultrafine periodic structure having a desired shape that is periodically arranged periodically can be manufactured at a time.

[Brief description of the drawings]

FIG. 1 is an explanatory view showing an apparatus for manufacturing an ultrafine periodic structure used in an embodiment of the present invention.

FIG. 2 is an explanatory diagram showing a state in which a two-dimensional interference image having a periodic structure of a square lattice is formed on a substrate.

FIG. 3 is a schematic plan view showing irradiation directions of light irradiated on the substrate from four directions.

FIG. 4 is an explanatory view showing a state where a two-dimensional interference image having a hexagonal lattice periodic structure is formed on a substrate.

FIG. 5 is a schematic plan view showing irradiation directions of light irradiated on the substrate from three directions.

FIG. 6 is an explanatory diagram showing a method of modulating the phase of light when a rectangular ultrafine pattern periodically arranged on a substrate is drawn.

FIG. 7 is an explanatory view showing a rectangular superfine pattern that is periodically arranged and drawn on the substrate.

FIG. 8 is a schematic cross-sectional view showing a cross section of a material together with the intensity distribution of a coherent beam interference image when three cycles of atomic layer epitaxy are performed by the method of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Coherent beam supply device 2 Gas supply device 3 Substrate exchange room 4 Reaction chamber 5 Synchrotron radiation source 6 Filter 7 Substrate 8 Gate valve 9, 10 Vacuum exhaust device 11 Substrate holder 12 Substrate heater 13 Gas nozzle 14 to 16 Half mirror 17 to 20 Phase Modulator 21-27 Mirror P Ultrafine pattern

Claims (6)

[Claims] Irradiating a substrate gas with a source gas;
By alternately repeating coherent radiation, laser light, or coherent electron beam to irradiate the substrate surface from a plurality of directions to form a two-dimensional interference image on the substrate surface, A material obtained by reacting the source gas at the position of the two-dimensional interference image, selectively, and while controlling the thickness in atomic layer units, a two-dimensionally periodically arranged hyperfine period. The method of manufacturing the structure. Irradiating the substrate surface with a source gas;
The substrate surface is irradiated with any of coherent radiation light, laser light, or coherent electron beam while modulating each phase individually from a plurality of directions, and a two-dimensional interference image formed on the substrate surface is parallelized. By moving and drawing an ultra-fine pattern, and alternately repeating, the material obtained by the reaction of the source gas at the position of the ultra-fine pattern is selected, and the thickness is controlled in atomic layer units. A method for manufacturing a two-dimensionally periodically arranged ultrafine periodic structure, characterized by depositing. 3. irradiating the substrate surface with a first source gas and irradiating the substrate surface with a second source gas.
By alternately repeating coherent radiation, laser light, or coherent electron beam to irradiate the substrate surface from a plurality of directions to form a two-dimensional interference image on the substrate surface, Two-dimensionally depositing a material obtained by reacting the first and second source gases at the position of the two-dimensional interference image while controlling the thickness in units of molecular layers. A method for manufacturing an ultrafine periodic structure having a periodic arrangement. 4. A method of irradiating a substrate surface with a first source gas, and irradiating a coherent radiation beam, a laser beam or a coherent electron beam from a plurality of directions while irradiating the second source gas. Irradiating the substrate surface while individually modulating the phase of the laser beam, and moving the two-dimensional interference image formed on the substrate surface in parallel to form an ultrafine pattern; A material formed by reacting the first and second source gases at the position of the pattern selectively and controlling the thickness in units of molecular layers; A method for manufacturing a fine periodic structure. 5. A method of irradiating a reactive gas onto a surface of a substrate, and irradiating a surface of the substrate with any of coherent radiation, laser light, or a coherent electron beam from a plurality of directions. The substrate material at the position of the two-dimensional interference image is selectively etched and the depth is controlled in atomic layer units by alternately repeating the steps of forming a two-dimensional interference image to be formed on the substrate. A method for producing a two-dimensionally periodically arranged ultrafine periodic structure. 6. Irradiating the substrate surface with a reactive gas, and irradiating the substrate surface with any of coherent radiation, laser light or coherent electron beam from a plurality of directions. Moving the two-dimensional interference image formed on the surface in parallel to draw an ultra-fine pattern;
Characterized in that the substrate material at the position of the ultrafine pattern is etched selectively while controlling the depth in units of atomic layers by alternately repeating the above. Manufacturing method.