JPH11344573A - Radiation semi-conductor detector, and radiation semi-conductor detector array - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a radiation semi-conductor detector capable of being easily assembled with excellent accuracy, and excellent in spatial resolution. SOLUTION: In a radiation semi-conductor detector, a plurality of semi-conductor cells 2 for detecting the radiation are arranged in semi-conductor storage cases 3, 4 with equal intervals along a specified direction, and the detector is modularized to keep its insensitive zone to be constant by providing an application electrode and a signal fetch electrode to be respectively and electrically connected to each of the semi-conductor cells 2 on the cases 3, 4 parallel to the radiation incident direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a radiation semiconductor detector array used for detecting radiation emitted from a radioisotope (RI) administered to a subject and imaging the internal distribution of the radioisotope. .

[0002]

BACKGROUND OF THE INVENTION Radioisotopes (R
A radiation detector for detecting radiation emitted from I)
It is one of the most important components in a nuclear medicine diagnostic apparatus, and it is no exaggeration to say that the performance of the radiation detector affects the performance of the entire apparatus such as spatial resolution, energy resolution, and counting characteristics.

[0003] At present, scintillation type detectors, which are widely and generally used as radiation detectors, particularly anger type detectors comprising a combination of a scintillator (phosphor), a light guide and a photomultiplier tube (PMT) array. It is.

[0004] However, this scintillation detector detects light generated by the scintillator due to the incidence of radiation.
Through a light guide, a structure is used in which a plurality of photomultiplier tubes or photodiodes densely arranged on the back of the light guide convert it into an electric signal and detect it, so it must be very large and heavy. Absent. Further, since the two-stage conversion of radiation-light-electric signal is performed, the energy resolution is limited.

On the other hand, in a semiconductor detector which has been developed in recent years, a large number of electron-hole pairs generated in a semiconductor when radiation is applied to the semiconductor to which a bias voltage has been applied, each has a positive electrode and a negative electrode. Induced charges induced when moving to the electrodes are accumulated in a charge amplifier provided on the positive electrode side and output as a signal proportional to energy. Therefore, the semiconductor detector can directly detect radiation with high conversion efficiency by one-stage conversion of radiation-electric signal,
In addition, since radiation can be individually detected in a semiconductor cell (cell), it is expected that energy resolution and counting characteristics can be significantly improved.

Further, the semiconductor detector uses a two-dimensional cell array of semiconductors and a preamplifier in order to secure a sufficient field of view because the crystal size of the semiconductor used is smaller than that of a scintillator (NaI) widely used in Anger type detectors. In general, semiconductor cell array modules (modules) with a built-in signal processing unit consisting of a readout circuit and the like are densely arranged, but a semiconductor detector does not require a light guide or a photomultiplier tube. Therefore, it is expected that the radiation detector is reduced in size and weight.

[0007] For example, CdTe or Cd
A bias electrode is provided on a radiation incident surface of a cadmium telluride compound semiconductor such as ZnTe, and a signal extraction electrode is provided on a back surface opposite to the semiconductor. A two-dimensional array is formed by separating elements vertically and horizontally to form a two-dimensional array. ) Many are configured to absorb the radiation that has passed through the electrodes, but recently, a structure has been proposed in which semiconductor cells are arranged vertically in a direction substantially parallel to the radiation incident direction. ing.

When the semiconductor cell is placed vertically, an applied (bias) voltage is applied in a direction perpendicular to the radiation incident direction, and the distance in the direction of absorbing radiation can be made sufficiently long without increasing the applied voltage. can do.

[0009]

However, in such a conventional vertical type semiconductor detector, one cell is separated into elements in order to form an array structure by arranging physically independent cells. There is a problem that the alignment accuracy is lower than that of the conventional horizontal type that forms an array structure, that is, the size (thickness) of the dead zone between the semiconductor cells in the module as well as the dead space (dead zone) between the modules. There is a problem that the image becomes uneven and the image formation is difficult due to the generation of unique artifacts.

In addition, in order to provide room for interposing the electrode layer and the insulating layer, etc., and to adjust the variation in the size of the dead zone, it is necessary to increase the dead zone between adjacent semiconductor cells to some extent. There is also a limit to the improvement in spatial resolution.

Further, in the module having the conventional configuration, even if the size of the dead zone can be uniformly adjusted in each module, the size of the dead zone is slightly different for each module. In the combined detector, SPECT (Single Photon)
Emission Computed Tommmog
In order to obtain a clear image without distortion in the image collection when performing the “rapy”, very complicated image processing and mechanical contrivance are required.

An object of the present invention is to provide a radiation semiconductor detector array which can be assembled more easily and more accurately than in the past, has excellent spatial resolution, and can easily perform signal processing for image formation.

[0013]

According to a first aspect of the present invention, there is provided a radiation semiconductor detector including a plurality of radiation detecting semiconductor cells arranged at predetermined intervals along a predetermined direction. An application electrode and a signal extraction electrode which are arranged in the semiconductor storage case at intervals and are electrically connected to the respective semiconductor cells are provided in parallel with the radiation incident direction.

Preferably, in claim 1, the thickness of the outer wall of the semiconductor storage case is approximately one half of the predetermined interval.

Preferably, in the first and second aspects, the predetermined interval is not more than approximately one-tenth of a width of the semiconductor cell in the predetermined direction.

Preferably, in the first to third aspects, the semiconductor storage case is formed by detachably combining members divided into upper and lower parts.

Preferably, in the first to third aspects, the semiconductor storage case is an integrally molded product.

Preferably, an applied voltage line for supplying a voltage to the applied electrode is wired on a radiation incident surface of the semiconductor storage case or buried in the vicinity of the radiation incident surface. The semiconductor signal from the signal extraction electrode is output from the bottom surface side via the bottom of the semiconductor storage case opposite to the radiation incident surface.

Preferably, in claim 1 to 6, the semiconductor cell and the electrode provided in the semiconductor storage case are electrically connected by using a spring structure.

Preferably, the semiconductor cell and the electrode provided in the semiconductor storage case are electrically connected to each other by using a conductive adhesive.

Preferably, the semiconductor cell and the electrode provided in the semiconductor storage case are electrically connected to each other by utilizing thermal expansion and thermal contraction of the case. I do.

Preferably, according to claims 7 to 9, the semiconductor cell is detachably mounted on the semiconductor storage case.

Preferably, in claim 1, the plurality of semiconductor cells arranged in the predetermined direction are arranged in the semiconductor storage case at a predetermined interval in a direction orthogonal to the predetermined direction. It is further characterized by a plurality of arrangements.

Preferably, a plurality of the signal extraction electrodes are provided for one semiconductor cell at equal intervals in a direction orthogonal to the predetermined direction.

Preferably, in claim 12,
An insulating layer is formed between the electrodes of the one semiconductor cell by ion implantation.

Preferably, in claim 12,
An insulating groove is provided between the electrodes of the one semiconductor cell.

[0027] Preferably, in claim 1 to 14, a surface of the semiconductor storage case opposite to the radiation incident surface has a size not protruding from the radiation incident surface when viewed from the radiation incident direction. The signal processing circuit section and the supporting leg section are arranged.

Preferably, in claim 15,
At least a part of the signal processing circuit portion and the supporting leg portion are manufactured as an integrally molded product with a member constituting the semiconductor storage case or a lower portion thereof.

Preferably, claims 15 and 16 are provided.
Wherein a metal plate is fixed to an end of the support leg.

Preferably, in claim 17,
A ground surface and a ground pattern for guiding the ground potential to the outside of the case are provided in a bottom portion of the radiation semiconductor detector opposite to the radiation incident surface, and the ground pattern is provided on the metal plate via the support leg. Is connected to the terminal.

Preferably, in claim 18,
The end of the connector is electrically connected to the motherboard directly or via a conductive wire, and the metal plate is located between the surface of the semiconductor storage case opposite to the radiation incident surface and the motherboard. It is characterized by doing.

Preferably, a cooling means for cooling the metal plate is provided.

Further, in order to solve the above-mentioned problems, a radiation semiconductor detector array according to the present invention according to the present invention provides a radiation semiconductor detector array comprising a plurality of radiation detecting semiconductor cells arranged at regular intervals along a predetermined direction at predetermined intervals. It is arranged in a storage case, and a radiation semiconductor detector in which an application electrode and a signal extraction electrode electrically connected to each of the semiconductor cells are provided in parallel with a radiation incident direction is arranged in close contact with a predetermined direction. I do.

Preferably, according to claim 21, the radiation semiconductor detector is further arranged so as to be in close contact with a direction orthogonal to the predetermined direction.

Further, in order to solve the above problem, a radiation semiconductor detector according to the present invention according to claim 23, wherein a plurality of semiconductor cells for radiation detection having at least two electrodes and the plurality of semiconductor cells are inserted. A first semiconductor storage case member having a plurality of grooves for inserting the plurality of semiconductor cells, and a semiconductor storage case having a plurality of grooves for inserting the plurality of semiconductor cells and storing the plurality of semiconductor cells together with the first semiconductor storage case member A second semiconductor storage case member, a first wiring attached to the first semiconductor storage case member, and electrically connected to one electrode of the semiconductor cell; and a second semiconductor storage case. Attached to the member,
A second wiring electrically connected to a different electrode from the first wiring of the semiconductor cell.

Preferably, in claim 23, the first wiring is a wiring for supplying an applied voltage to the semiconductor cell, and the second wiring is an output signal of the semiconductor cell.
A wiring for supplying a signal processing unit for detecting incidence of radiation, wherein the first semiconductor storage case member is a member arranged on a radiation incident surface side of the semiconductor storage case, and the second semiconductor storage case member Is a member that is disposed on the opposite side of the radiation incident surface of the semiconductor storage case via the first semiconductor storage case member, and is disposed close to the signal processing unit.

[0037]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a radiation semiconductor detector according to the present invention will be described below with reference to the drawings. It should be noted that here, the radiation semiconductor detector of the present invention is used as a nuclear medicine diagnostic apparatus (or image) for converting the in vivo distribution of radioisotopes (RI) administered to a subject into a planar image, SPECT image, or PET image (or image). Gamma camera)
However, the application of the radiation semiconductor detector of the present invention is not limited to this gamma camera, but may be applied to an X-ray computed tomography apparatus (commonly known as a CT scanner) or other The present invention can be applied to an apparatus used in a field such as a nondestructive inspection.

The radiation semiconductor detector of the present invention is schematically constructed by mounting one or more semiconductor cell array modules of the present invention on a motherboard. In addition, in order to distinguish from the detector which consists of one module, the detector which consists of several modules may be called a radiation semiconductor detector array for convenience.

[First Embodiment] FIG. 1 is a schematic perspective sectional view of a semiconductor cell array module 1 of the present invention, and FIG. 2 is a schematic front sectional view thereof.

The module 1 includes a semiconductor cell 2, an upper semiconductor case (upper case) 3, a lower semiconductor case (lower case) 4, a signal line storage case 5, a support leg 6,
Connector (output terminal) 7, ASIC (application specific integrated circuit) 8, applied voltage line 9, applied electrode 10, signal line 11,
It is roughly composed of a signal extraction electrode 12 and a ground pattern 13.

According to FIGS. 1 and 2, the module 1
Means that the semiconductor cells 2 are arranged in the semiconductor storage grooves 18 provided in the upper case 3 provided with the applied voltage line 9 and the applied electrode 10 and the lower case 4 provided with the signal line 11, the signal extraction electrode 12 and the ground pattern 13, respectively. Then, the two cases 3 and 4 are combined to form a semiconductor case, and the signal line storage case 5 and the connector (output terminal) are provided on the surface of the lower case 4 opposite to the joint surface with the upper case 3. 7 and an ASIC (application specific integrated circuit) 8 are provided, and a support leg 6 is further provided below the signal processing unit.

The semiconductor cell 2 is made of, for example, CdTe or CdZ.
A semiconductor cell formed by providing a cadmium telluride-based compound semiconductor crystal such as nTe with an application electrode surface and a signal extraction electrode surface, and has a comb-like upper case 3 and a lower case 4
Are vertically arranged at equal intervals in close contact with both cases between the grooves 18 between the upper case 3 and the respective electrode surfaces substantially parallel to the radiation incident direction of each semiconductor cell 2.
The application (bias) electrode 10 and the signal extracting electrode 12 provided on the lower case 4 and the lower case 4 are in contact with each other.

At this time, the semiconductor cell 2 moves in a predetermined direction (FIG. 1).
1 in the X direction) to form a one-dimensional array, the direction is further orthogonal to the predetermined direction (Y direction in FIG. 1).
Direction), a plurality of rows may be arranged to form a two-dimensional array. When forming a two-dimensional array, a plurality of semiconductor cells 2 may be arranged in the Y direction, or both electrodes of one semiconductor cell 2 or signal extraction electrodes may be arranged at appropriate regular intervals in the Y direction. Elements can also be separated by providing a plurality of parts which are electrically insulated from each other. In the embodiment shown in FIG. 1, one semiconductor cell 2 is separated into elements by a plurality of signal extraction electrodes provided in a Y direction (a direction orthogonal to the predetermined direction) to form a two-dimensional array. Insulation between the semiconductor elements is performed, for example, by performing an ion implantation process between the electrodes of the semiconductor crystal to provide an insulating separation layer in the crystal, or by inserting a notch groove of an appropriate length between the electrodes of the crystal. And the like. At this time, the thickness of these insulating separation layers is made equal to the distance between adjacent semiconductor cells in the X (predetermined direction), and the size of the dead zone is made equal in all the two-dimensional semiconductor cell arrays.

The application electrodes 10 and the signal extraction electrodes 12 are provided on the side surfaces of the semiconductor storage grooves 18 provided in the upper case 3 and the lower case 4, respectively, in contact with the semiconductor cells. At this time, the electrodes 10 and 12 are provided such that electrodes of the same type are opposed to each other. In accordance with this, the semiconductor cell 2 is also arranged such that the surfaces on the application electrode side or the surfaces on the signal extraction electrode side always face each other. Are located in Therefore, the application electrode 10 can be shared by two adjacent semiconductor cells, or can be shared by a plurality of semiconductor cells or semiconductor elements arranged in the same row in the Y direction.

As described above, the semiconductor cells 2 are arranged in the X direction so that the surfaces on the application electrode side or the surfaces on the signal extraction electrode side always face each other.
Since the signal extraction electrodes 12 are not adjacent to each other and are not close to the application electrode 10 and are not easily affected by noise due to the applied voltage, a good signal having a high S / N ratio can be obtained and the distance between the electrodes can be reduced. It is possible to reduce the size of the dead zone by making it smaller.

The storage of the semiconductor cell 2 can be carried out by burying it in a completely integrated case or by installing it in a plurality of divided cases. From a viewpoint, it is preferable to perform the installation in a divided case such as the upper semiconductor storage case 3 and the lower semiconductor storage case 4 which are divided into two vertically in FIG. The case for storing the semiconductor cell can be made by molding a material normally used for a radiation detector, for example, a heat-resistant insulating molding material having good radiation characteristics to a predetermined shape and size. It is preferable that the physical strength of the case is strengthened by a method such as molding by sandwiching a reinforcing material such as above with the molding material as described above.

The upper case 3 and the lower case 4 for storing semiconductors have a size such that the semiconductor cells can be tightly fitted to the wall surfaces when they are assembled and integrated. The distance between the outer surface of the case and the groove 18 adjacent thereto (that is, the thickness t of the case side wall) is equal to the distance T between the adjacent grooves, which is two times the distance T between the adjacent grooves. 1 (T = 2t). Therefore, when a plurality of modules of the present invention are densely arranged to form a detector having a wider field of view, the distance between adjacent semiconductor cells across the module is equal to the distance between adjacent semiconductor cells in the module. Therefore, the size of all the dead zones is, for example, 1/10 of the size of the dead zone.
Etc. can be kept at a certain size.

As described above, according to the semiconductor cell array module 1 of the present invention, although the electrodes and the insulating layers must be provided between the cells, it is electrically possible to make the distance between adjacent semiconductor cells extremely small. Although it is possible, it is necessary to maintain the physical strength of the entire case and to secure the mechanical accuracy at the time of forming the member. At present, these factors define the distance between adjacent semiconductor cells in the present invention. Therefore, at present, the distance between the semiconductor cells can be reduced to only about one twentieth of the thickness of the semiconductor cell (that is, the size of the sensitive zone). However, according to the present invention,
With the development of peripheral technologies such as the development of a new case material, it is possible to reduce the size of the dead zone, which is the distance between semiconductor cells, to further improve the spatial resolution.

The connection between the case-side electrode and the semiconductor cell is as follows:
A method of bonding semiconductor cells, such as using a conductive adhesive,
Alternatively, after the cell is mounted in a state where the case is heated and thermally expanded, electrical connection between the electrode and the cell is secured by thermal contraction of the case, or the electrode is formed into a shape having an elastic structure such as a leaf spring. Or by various methods such as a method of not bonding semiconductor cells such as providing a means for mechanically adhering such as a spring or an elastic structure such as a spring, etc. Can be connected. However, considering the convenience of maintenance work such as when a defective product is found in the mounted semiconductor cell and replacement is required, the connection between the case side electrode and the cell does not adhere the cell, Preferably, it is a possible method.

The application electrode 10 provided in the upper case 3
Are electrically connected to one applied voltage line (applied voltage pattern) 9 wired inside the upper case 3 or on the radiation incident surface. When configuring a detector using a plurality of modules, if the applied voltage line 9 is wired on the radiation incident surface and an appropriate connector is provided at the end thereof, the applied voltage line can be easily applied to all modules. This is advantageous because 9 can be shared.

The signal extraction electrodes 12 provided on the lower case 4 are electrically connected to independent signal lines (signal patterns) 11, respectively. Led to the department.

The signal circuit section in the present embodiment is generally constituted by the signal line storage case 5, ASIC 8, and connector 7 shown in FIGS.

The signal storage case 5 is provided below the lower case 4 so as not to protrude from the lower surface of the lower case 4, and further below the predetermined number of ASICs 8, 8.
Although the connector 7 and the support leg 6 are provided, a desired device such as an ADC (analog-to-digital converter) or other members may be further provided.

All or some of the members described above can also be manufactured as a single piece.

The ground pattern 13 is disposed as large as possible inside the bottom of the lower case 4, thereby suppressing the influence of noise on the semiconductor signal which is a very small signal. The ground pattern 13 extends from the inside of the support leg 6 to the lower end thereof through the signal line storage case 5.

By fixing the supporting legs 6 to a metal plate such as a copper plate disposed at the lower part of the module, the module can be positioned and supported, and at the same time, the ground pattern 13 and the metal plate can be electrically connected. it can.
By this connection, insulation can be ensured and heat dissipation inside the module can be performed. Therefore, in this module, the support leg 6 also serves as a positioning means, a support means, an insulating means, and a heat radiating means. The connection between the support leg 6 and the metal plate can be made by various conventional methods such as screwing the support leg 6 with a screw structure, sliding and fixing, or using a wedge function after the module is placed. It can be done by a technique.

A cooling fan may be provided on a metal plate to improve the heat dissipation efficiency, or a more precise method such as arranging a water pipe having a contact surface with a Peltier cooling element on a metal plate to form a circulation system. Temperature control can also be performed. It is preferable that a metal plate be disposed between the module and the motherboard to ensure electrical isolation and to shut off heat from the motherboard.

[Second Embodiment] A plurality of radiation semiconductor detectors of the present invention using the semiconductor cell array module 1 described in detail above are closely attached to each other to form a densely arranged radiation semiconductor detector array having a wider field of view. An embodiment will be described with reference to FIGS.

FIG. 3 shows a two-dimensional radiation semiconductor detector array in which a number of relatively small modules 1 are densely fixed on a copper plate 14 using fixing nuts 15 and mounted on a motherboard 16, and FIG. 3 shows a two-dimensional radiation semiconductor detector array similar to that of FIG. 3 except that a module 1 larger than that used is used.

In these embodiments, the applied voltage pattern 9 is arranged on the surface of the radiation incident surface of the upper case 2 so as to be shared between modules. Further, the connection between the supporting leg 6 of the module and the copper plate 14 is performed using a fixing nut 15, and a shield 17 of lead or the like is provided on the side surface of the array to reduce noise.

A semiconductor signal generated by gamma ray incidence is transmitted from the signal extraction electrode 12 to the AS via the signal line 11.
After being sent to the IC 8 and processed by the ASIC 8, it is taken out to the motherboard 16 via the connector 7. At this time,
In the embodiment of FIGS. 3 and 4 in which a plurality of modules of the present invention are densely arranged to constitute a detector having a wider field of view, as described above, a space between the outer surface of the detector module and the semiconductor cell adjacent thereto is provided. Since the distance is one half of the distance between adjacent semiconductor cells in the detector module, the distance between adjacent semiconductor cells across the detector module is equal to the distance between adjacent semiconductor cells in the detector module. ,
The size of all the dead zones is, for example, 10 of the size of the dead zone.
It is kept at a certain size, such as one part.

A comparison between the detector of FIG. 3 and the detector of FIG. 4 shows that the detector of FIG. The number of the connectors 7 and the supporting legs 6 and the like is small and the configuration is simple, and the module 1 and the motherboard 1
(6) that a large circuit mounting space can be taken inside, and that the effect of electrical isolation by the copper plate becomes large;
This is advantageous in that the number of contact sites between the modules 1 is small and the size of the dead zone, which is the distance between the semiconductor cells, is easy to arrange uniformly. However, these are only differences in practical design, and The size and number of modules to be used are determined according to various conditions such as manufacturing technology and cost.

[0063]

The radiation semiconductor detector (array) of the present invention.
Is to arrange semiconductor cells vertically and with high precision and high density at equal intervals, make the ratio of the distance between cells in the module to the thickness of the outer wall of the module 2: 1 and incorporate electrical wiring into the structure Since all the members have a structure that can be manufactured as an integrated molded product, the thickness of the semiconductor in the radiation absorption direction can be changed without deteriorating the detection sensitivity and the energy resolution, and the cell density ( Spatial resolution)
, The signal processing for forming an image (video) is facilitated, the circuit design is facilitated, the number of parts and the number of assembling steps are reduced, the assembling accuracy can be improved, and the product can be downsized.

[Brief description of the drawings]

FIG. 1 is a perspective sectional view schematically showing one embodiment of a semiconductor cell array module used for a radiation semiconductor detector of the present invention.

FIG. 2 is an exploded front view schematically showing one embodiment of a semiconductor cell array module used for the radiation semiconductor detector of the present invention.

FIG. 3 is a front view schematically showing one embodiment of a two-dimensional radiation semiconductor detector array according to the present invention.

FIG. 4 is a front view schematically showing another embodiment of the two-dimensional radiation semiconductor detector array according to the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 semiconductor cell array module 2 semiconductor cell 3 upper semiconductor case (upper case) 4 lower semiconductor case (lower case) 5 signal line storage case 6 support leg 7 connector (output terminal) 8 ASIC (integrated circuit for specific application) 9 Applied voltage line 10 Applied electrode 11 Signal line 12 Signal extraction electrode 13 Ground pattern 14 Fixing nut 15 Copper plate 16 Motherboard 17 Shield 18 Semiconductor storage groove

Claims (24)

[Claims] A plurality of radiation detecting semiconductor cells are arranged in a semiconductor storage case at predetermined intervals along a predetermined direction at predetermined intervals, and an application electrode and a signal extraction electrode electrically connected to each of the semiconductor cells. A radiation semiconductor detector characterized in that is provided in parallel with the radiation incident direction. 2. A thickness of an outer wall of the semiconductor storage case,
2. The radiation semiconductor detector according to claim 1, wherein the predetermined interval is approximately one half. 3. The radiation semiconductor detector according to claim 1, wherein the predetermined interval is not more than approximately one tenth of a width of the semiconductor cell in the predetermined direction. 4. The radiation semiconductor detector according to claim 1, wherein the semiconductor storage case is formed by removably combining upper and lower divided members. 5. The radiation semiconductor detector according to claim 1, wherein the semiconductor storage case is an integrally molded product. 6. An application voltage line for supplying a voltage to the application electrode is wired on a radiation incident surface of the semiconductor storage case or buried in the vicinity of the radiation incident surface, and a semiconductor signal from the signal extraction electrode is transmitted to the semiconductor storage case. 6. The output from the bottom surface side via a bottom portion of the storage case opposite to the radiation incident surface.
13. A radiation semiconductor detector according to item 9. 7. The semiconductor device according to claim 1, wherein the semiconductor cell and an electrode provided on the semiconductor storage case are electrically connected by using a spring structure.
13. A radiation semiconductor detector according to item 9. 8. The semiconductor device according to claim 1, wherein the semiconductor cell and an electrode provided in the semiconductor storage case are electrically connected by using a conductive adhesive. Radiation semiconductor detector. 9. The semiconductor device according to claim 1, wherein the semiconductor cell and an electrode provided in the semiconductor storage case are electrically connected by utilizing thermal expansion and contraction of the case. 13. A radiation semiconductor detector according to item 9. 10. The radiation semiconductor detector according to claim 7, wherein the semiconductor cell is detachably mounted on the semiconductor storage case. 11. The semiconductor storage case, wherein a plurality of rows of the plurality of semiconductor cells arranged in the predetermined direction are further arranged in the semiconductor storage case at a predetermined interval in a direction orthogonal to the predetermined direction. Item 11. The radiation semiconductor detector according to any one of Items 1 to 10. 12. The semiconductor device according to claim 1, wherein a plurality of the signal extraction electrodes are provided for one semiconductor cell at the predetermined interval in a direction orthogonal to the predetermined direction. A radiation semiconductor detector according to any of the preceding claims. 13. The radiation semiconductor detector according to claim 12, wherein an insulating layer is formed between the electrodes of the one semiconductor cell by ion implantation. 14. The radiation semiconductor detector according to claim 12, wherein an insulating groove is provided between the electrodes of the one semiconductor cell. 15. A signal processing circuit portion and a support leg portion having a size not protruding from the radiation incident surface when viewed in the radiation incident direction are arranged on a surface of the semiconductor storage case opposite to the radiation incident surface. Claim 1 characterized by having done
15. The radiation semiconductor detector according to any one of 14. 16. The semiconductor device according to claim 15, wherein at least a part of the signal processing circuit portion and the supporting leg portion are manufactured integrally with the semiconductor storage case or a member constituting a lower portion thereof. Radiation semiconductor detector. 17. The radiation semiconductor detector according to claim 15, wherein a metal plate is fixed to an end of said support leg. 18. A ground surface and a ground pattern for guiding the ground potential to the outside of the case are provided in a bottom portion of the radiation semiconductor detector opposite to the radiation incident surface,
The radiation semiconductor detector according to claim 17, wherein the ground pattern is connected to the metal plate via the support leg. 19. An end of the connector is electrically connected to a motherboard directly or through a conductive wire, and the metal plate is connected to a surface of the semiconductor storage case opposite to a radiation incident surface with the motherboard. 19. The radiation semiconductor detector according to claim 18, wherein the radiation semiconductor detector is located between the radiation semiconductor detector and the radiation semiconductor detector. 20. The radiation semiconductor detector according to claim 17, further comprising cooling means for cooling the metal plate. 21. A plurality of radiation detecting semiconductor cells are arranged in a semiconductor storage case at predetermined intervals along a predetermined direction at predetermined intervals, and an application electrode and a signal extraction electrode electrically connected to each of the semiconductor cells. A radiation semiconductor detector array comprising: a radiation semiconductor detector provided in parallel with a radiation incident direction; 22. A plurality of radiation detecting semiconductor cells are arranged in a semiconductor storage case at predetermined intervals along a predetermined direction in a semiconductor storage case, and an application electrode and a signal extraction electrode electrically connected to each of the semiconductor cells. 22. The radiation semiconductor detector array according to claim 21, wherein a radiation semiconductor detector provided in parallel with the radiation incident direction is further arranged in close contact with a direction orthogonal to the predetermined direction. 23. A first semiconductor device comprising: a plurality of radiation detecting semiconductor cells having at least two electrodes; and a plurality of grooves into which the plurality of semiconductor cells are inserted.
And a second semiconductor storage case having a plurality of grooves for inserting the plurality of semiconductor cells, and forming a semiconductor storage case for storing the plurality of semiconductor cells together with the first semiconductor storage case member. A member, a first wiring attached to the first semiconductor storage case member, and electrically connected to one electrode of the semiconductor cell, and a semiconductor cell attached to the second semiconductor storage case member, And a second wiring electrically connected to a different electrode from the first wiring. 24. The first wiring is a wiring that supplies an applied voltage to the semiconductor cell, and the second wiring supplies an output signal of the semiconductor cell to a signal processing unit that detects incidence of radiation. A wiring, wherein the first semiconductor storage case member is a member arranged on a radiation incident surface side of the semiconductor storage case, and the second semiconductor storage case member is a radiation incident surface of the semiconductor storage case. 24. A member which is arranged on the opposite side via the first semiconductor storage case member and is arranged close to the signal processing unit.
2. A radiation semiconductor detector according to claim 1.