JPH11344506A - Semiconductor acceleration sensor - Google Patents
Semiconductor acceleration sensorInfo
- Publication number
- JPH11344506A JPH11344506A JP10154071A JP15407198A JPH11344506A JP H11344506 A JPH11344506 A JP H11344506A JP 10154071 A JP10154071 A JP 10154071A JP 15407198 A JP15407198 A JP 15407198A JP H11344506 A JPH11344506 A JP H11344506A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- base substrate
- adhesive
- acceleration sensor
- semiconductor acceleration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Pressure Sensors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は半導体加速度セン
サに関し、特に製造工数の縮減に係わる。[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor acceleration sensor, and more particularly to a reduction in the number of manufacturing steps.
【０００２】[0002]
【従来の技術】この種の半導体加速度センサは図２に示
すように、ベース基板１と、ダイアフラム２と質量部３
とで構成される。ベース基板１は、例えば厚さ２mmのパ
イレクスガラスのような絶縁基板が用いられ、その内面
の中央部に、例えば深さ５μmの方形状の溝１ａが形成
され、その溝１ａの底面に例えば厚さ約0.５μm の電極
１ｂがスパッタリング、蒸着などにより形成される。2. Description of the Related Art As shown in FIG. 2, a semiconductor acceleration sensor of this type includes a base substrate 1, a diaphragm 2 and a mass 3
It is composed of As the base substrate 1, for example, an insulating substrate such as Pyrex glass having a thickness of 2 mm is used, and a rectangular groove 1a having a depth of, for example, 5 μm is formed at the center of the inner surface thereof. An electrode 1b having a thickness of about 0.5 μm is formed by sputtering, vapor deposition or the like.
【０００３】ダイアフラム２には、例えば厚さ４００μ
m のシリコンのような半導体基板が用いられ、その内面
の中央部に、ベース基板の電極１ｂと対向する、例えば
厚さ約0.５μm の電極２ａが同様の方法で形成され、外
面の中央部に例えば深さ３８０μm のロ字状の溝２ｂが
形成される。この溝２ｂの外側、底面側及び内側がそれ
ぞれ枠部２ｃ，薄肉部２ｄ及び島状部２ｅとされてい
る。溝２ｂの深さをほぼ３８０μm とした場合、薄肉部
２ｄの厚さはほぼ２０μm となる。The diaphragm 2 has a thickness of, for example, 400 μm.
m of a semiconductor substrate such as silicon, and an electrode 2a having a thickness of, for example, about 0.5 μm, which is opposed to the electrode 1b of the base substrate, is formed at the center of the inner surface by the same method. A square groove 2b having a depth of, for example, 380 .mu.m is formed. The outside, the bottom, and the inside of the groove 2b are a frame 2c, a thin portion 2d, and an island 2e, respectively. When the depth of the groove 2b is approximately 380 μm, the thickness of the thin portion 2d is approximately 20 μm.
【０００４】ダイアフラムの外面の島状部２ｅに例えば
パイレクスガラス製の質量部３が陽極接合などにより固
着される。ベース基板１とダイアフラム２とは互いに近
接対向して配され、各々の周辺部同士が例えば陽極接合
または接着剤により固着され、各々の電極１ｂ，２ａ間
に所定寸法（例えばほぼ４μm ）のギャップ４が形成さ
れる。A mass 3 made of, for example, Pyrex glass is fixed to the island 2e on the outer surface of the diaphragm by anodic bonding or the like. The base substrate 1 and the diaphragm 2 are arranged in close proximity to each other, their respective peripheral portions are fixed to each other by, for example, anodic bonding or an adhesive, and a gap 4 having a predetermined size (for example, approximately 4 μm) is provided between each of the electrodes 1b and 2a. Is formed.
【０００５】この加速度センサに上下方向の加速度が入
力すると、島状部２ｅ及び質量部３に慣性力が加わり、
薄肉部２ｄと共に上下方向に変位する。その結果、ギャ
ップ４の寸法が変化し、電極間の静電容量が変化する。
この静電容量の変化を検出することにより入力加速度を
検出する。When vertical acceleration is input to the acceleration sensor, an inertial force is applied to the island portion 2e and the mass portion 3, and
It is displaced in the vertical direction together with the thin portion 2d. As a result, the size of the gap 4 changes, and the capacitance between the electrodes changes.
The input acceleration is detected by detecting the change in the capacitance.
【０００６】[0006]
【発明が解決しようとする課題】近年、加速度センサの
需要が次第に拡大されて来たのに伴って、価格は低下の
傾向にある。メーカにとってセンサの性能もさることな
がら、価格が以前にも増して重要なセールスポイントに
なっている。この発明は、このような事情に鑑みて為さ
れたものであり、目的とするところは製造工数を縮減し
て原価低減を図ることにある。In recent years, as demand for acceleration sensors has been gradually increased, prices have tended to decrease. Price is an important selling point for manufacturers, not just sensor performance. The present invention has been made in view of such circumstances, and an object of the present invention is to reduce manufacturing man-hours and cost.
【０００７】[0007]
【課題を解決するための手段】（１）請求項１の発明
は、絶縁基板の内面の中央部に電極が形成されて成るベ
ース基板と、半導体基板の平坦な内面の中央部に、ベー
ス基板の電極と対向する電極が形成され、その半導体基
板の外面の中央部にロ字状の溝が形成され、その溝の外
側、底面側及び内側がそれぞれ枠部、薄肉部及び島状部
とされているダイアフラムと、そのダイアフラムの外面
の島状部に固着される質量部とを備え、ベース基板とダ
イアフラムとは、互いに近接対向して配され、各々の電
極間に所定寸法のギャップが形成されている半導体加速
度センサに関する。According to a first aspect of the present invention, there is provided a base substrate in which an electrode is formed at a central portion of an inner surface of an insulating substrate, and a base substrate at a central portion of a flat inner surface of a semiconductor substrate. Are formed at the center of the outer surface of the semiconductor substrate, and the outer, bottom, and inner sides of the groove are a frame portion, a thin portion, and an island portion, respectively. The base substrate and the diaphragm are arranged in close proximity to each other, and a gap of a predetermined size is formed between each of the electrodes. Semiconductor acceleration sensor.
【０００８】この発明では特に、ベース基板の電極を形
成する内面は平坦とされ、その内面の周辺部と、ダイア
フラムの内面の周辺部とが、均一な径の球状粒子を混合
した接着剤により接合される。 （２）請求項２の発明では、球状粒子がエポキシ樹脂ま
たはガラスより成る。 （３）請求項３の発明では、接着剤がエポキシ樹脂系接
着剤とされる。In this invention, in particular, the inner surface of the base substrate on which the electrodes are formed is flat, and the peripheral portion of the inner surface and the peripheral portion of the inner surface of the diaphragm are joined by an adhesive mixed with spherical particles having a uniform diameter. Is done. (2) In the invention of claim 2, the spherical particles are made of epoxy resin or glass. (3) In the invention of claim 3, the adhesive is an epoxy resin-based adhesive.
【０００９】（４）請求項４の発明では、ベース基板が
パイレクスガラスより成り、ダイアフラムがシリコンよ
り成る。(4) In the invention of claim 4, the base substrate is made of Pyrex glass, and the diaphragm is made of silicon.
【００１０】[0010]
【発明の実施の形態】この発明の実施例を図１に、図２
と対応する部分に同じ符号を付けて示し、重複説明を省
略する。この発明では、製造工数の縮減を図るため、製
作に比較的大きな工数を占めていたベース基板１の溝１
ａが削除される。その代わりに均一な径の球状粒子５を
混合した接着剤６を用いて、ベース基板１とダイアフラ
ム２の各内面の周辺部同士が接着される。球状粒子５と
して、例えば直径５μm の市販の安価なエポキシ樹脂ま
たはガラス製のビーズが、また接着剤６として安価で、
特性の安定した例えばエポキシ樹脂系接着剤が用いられ
る。FIG. 1 shows an embodiment of the present invention, and FIG.
The same reference numerals are given to the portions corresponding to and the description will be omitted. According to the present invention, in order to reduce the number of manufacturing steps, the groove 1 of the base substrate 1 occupies a relatively large number of steps in the manufacturing.
a is deleted. Instead, the peripheral portions of the inner surfaces of the base substrate 1 and the diaphragm 2 are bonded to each other using an adhesive 6 in which spherical particles 5 having a uniform diameter are mixed. As the spherical particles 5, for example, commercially available inexpensive epoxy resin or glass beads having a diameter of 5 μm are used.
For example, an epoxy resin adhesive having stable characteristics is used.
【００１１】このようにすると、球状粒子５がスペーサ
となり、ベース基板１とダイアフラム２の内面間に、球
状粒子の直径にほぼ等しい寸法の間隙が作られ、従って
電極１ｂと２ａとの間に所定寸法のギャップ４が形成さ
れる。この接着に要する工数は従来の陽極接合または接
着剤による接合とほとんど変わらない。なお、ベース基
板１及びダイアフラム２として従来と同様のパイレクス
ガラス及びシリコンをそれぞれ用いることができる。In this manner, the spherical particles 5 serve as spacers, and a gap having a size substantially equal to the diameter of the spherical particles is formed between the base substrate 1 and the inner surface of the diaphragm 2. Therefore, a predetermined gap is formed between the electrodes 1b and 2a. A dimensional gap 4 is formed. The man-hour required for this bonding is almost the same as the conventional anodic bonding or bonding using an adhesive. Pyrex glass and silicon can be used as the base substrate 1 and the diaphragm 2 as in the related art.
【００１２】[0012]
【発明の効果】この発明では、ベース基板１とダイアフ
ラム２の各内面の周辺部同士を、スペーサの機能を持つ
球状粒子５の入った接着剤６で接合し、電極１ｂ，２ａ
間に所定寸法のギャップを形成している。これにより従
来比較的大きな製造工数を占めていたベース基板の内面
に溝１ａを形成する工程が不要となり、その分原価低減
を達成できる。According to the present invention, the peripheral portions of the inner surfaces of the base substrate 1 and the diaphragm 2 are joined with an adhesive 6 containing spherical particles 5 having a spacer function, and the electrodes 1b and 2a are joined together.
A gap having a predetermined size is formed therebetween. Thus, the step of forming the groove 1a on the inner surface of the base substrate, which has conventionally occupied a relatively large number of manufacturing steps, is not required, and the cost can be reduced accordingly.
【図１】この発明の実施例を示す図で、Ａは平面図、Ｂ
はＡのａ−ａ′断面図、Ｃは底面図、ＤはＢのｂ部拡大
図。FIG. 1 is a diagram showing an embodiment of the present invention, wherein A is a plan view, and B is
Is a sectional view taken along the line aa ′ of A, C is a bottom view, and D is an enlarged view of a portion b of B.
【図２】従来の加速度センサの断面図。FIG. 2 is a sectional view of a conventional acceleration sensor.
Claims (4)
れて成るベース基板と、 半導体基板の平坦な内面の中央部に、前記ベース基板の
電極と対向する電極が形成され、その半導体基板の外面
の中央部にロ字状の溝が形成され、その溝の外側、底面
側及び内側がそれぞれ枠部、薄肉部及び島状部とされて
いるダイアフラムと、 そのダイアフラムの外面の前記島状部に固着される質量
部と、 を備え、前記ベース基板とダイアフラムとは、互いに近
接対向して配され、各々の前記電極間に所定寸法のギャ
ップが形成されている半導体加速度センサにおいて、 前記ベース基板の前記電極を形成する内面は平坦とさ
れ、その内面の周辺部と、前記ダイアフラムの内面の周
辺部とが、均一な径の球状粒子を混合した接着剤により
接合されていることを特徴とする半導体加速度センサ。1. A base substrate in which an electrode is formed in the center of an inner surface of an insulating substrate, and an electrode opposed to the electrode of the base substrate is formed in a center of a flat inner surface of the semiconductor substrate. A diaphragm having a square-shaped groove formed in the center of the outer surface of the outer surface, the outer side, the bottom side, and the inner side of the groove being a frame portion, a thin portion, and an island-shaped portion, respectively, and the island-shaped outer surface of the diaphragm A mass part fixed to the part, wherein the base substrate and the diaphragm are arranged close to each other and opposed to each other, and a gap having a predetermined dimension is formed between each of the electrodes. The inner surface of the substrate that forms the electrode is flat, and the peripheral portion of the inner surface and the peripheral portion of the inner surface of the diaphragm are joined by an adhesive mixed with spherical particles having a uniform diameter. Semiconductor acceleration sensor according to symptoms.
キシ樹脂またはガラスより成ることを特徴とする半導体
加速度センサ。2. The semiconductor acceleration sensor according to claim 1, wherein said spherical particles are made of epoxy resin or glass.
シ樹脂系接着剤であることを特徴とする半導体加速度セ
ンサ。3. The semiconductor acceleration sensor according to claim 1, wherein said adhesive is an epoxy resin-based adhesive.
イレクスガラスより成り、前記ダイアフラムがシリコン
より成ることを特徴とする半導体加速度センサ。4. The semiconductor acceleration sensor according to claim 1, wherein said base substrate is made of Pyrex glass, and said diaphragm is made of silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10154071A JPH11344506A (en) | 1998-06-03 | 1998-06-03 | Semiconductor acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10154071A JPH11344506A (en) | 1998-06-03 | 1998-06-03 | Semiconductor acceleration sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11344506A true JPH11344506A (en) | 1999-12-14 |
Family
ID=15576268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10154071A Pending JPH11344506A (en) | 1998-06-03 | 1998-06-03 | Semiconductor acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11344506A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007069320A (en) * | 2005-09-08 | 2007-03-22 | Sony Corp | Function element and its manufacturing method |
| WO2013051068A1 (en) * | 2011-10-07 | 2013-04-11 | 株式会社日立製作所 | Inertial sensor |
| KR101323267B1 (en) * | 2012-03-09 | 2013-10-30 | 주식회사 파워엠엔씨 | a magnetic sensor using spacer |
| CN107399909A (en) * | 2017-09-06 | 2017-11-28 | 安徽凯盛基础材料科技有限公司 | The preparation method of solid phase converter glass microsphere |
| CN107555766A (en) * | 2017-09-06 | 2018-01-09 | 安徽凯盛基础材料科技有限公司 | The method that solid phase converter is made using glass microballoon |
| CN109724721A (en) * | 2019-01-21 | 2019-05-07 | 武汉大学 | The SiC high-temp pressure sensor and its manufacturing method of non-leaded package |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05223845A (en) * | 1991-11-12 | 1993-09-03 | Texas Instr Inc <Ti> | Accelerometer |
| JPH05288623A (en) * | 1992-04-07 | 1993-11-02 | Nissan Motor Co Ltd | Manufacture of capacitance type sensor |
| JPH05333056A (en) * | 1992-05-27 | 1993-12-17 | Hitachi Ltd | Acceleration sensor |
| JPH06331652A (en) * | 1993-05-27 | 1994-12-02 | Sanyo Electric Co Ltd | Semiconductor acceleration sensor |
| JPH08122358A (en) * | 1994-10-21 | 1996-05-17 | Japan Aviation Electron Ind Ltd | Semiconductor acceleration sensor |
| JPH08240610A (en) * | 1995-03-03 | 1996-09-17 | Hitachi Ltd | Acceleration detector and pressure converter |
| JPH1054843A (en) * | 1996-08-09 | 1998-02-24 | Denso Corp | Semiconductor acceleration sensor |
| JPH10104264A (en) * | 1996-09-26 | 1998-04-24 | Japan Aviation Electron Ind Ltd | Acceleration sensor |
| JPH10123166A (en) * | 1996-08-09 | 1998-05-15 | Denso Corp | Semiconductor acceleration sensor |
| JPH10123167A (en) * | 1996-08-09 | 1998-05-15 | Denso Corp | Semiconductor acceleration sensor |
-
1998
- 1998-06-03 JP JP10154071A patent/JPH11344506A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05223845A (en) * | 1991-11-12 | 1993-09-03 | Texas Instr Inc <Ti> | Accelerometer |
| JPH05288623A (en) * | 1992-04-07 | 1993-11-02 | Nissan Motor Co Ltd | Manufacture of capacitance type sensor |
| JPH05333056A (en) * | 1992-05-27 | 1993-12-17 | Hitachi Ltd | Acceleration sensor |
| JPH06331652A (en) * | 1993-05-27 | 1994-12-02 | Sanyo Electric Co Ltd | Semiconductor acceleration sensor |
| JPH08122358A (en) * | 1994-10-21 | 1996-05-17 | Japan Aviation Electron Ind Ltd | Semiconductor acceleration sensor |
| JPH08240610A (en) * | 1995-03-03 | 1996-09-17 | Hitachi Ltd | Acceleration detector and pressure converter |
| JPH1054843A (en) * | 1996-08-09 | 1998-02-24 | Denso Corp | Semiconductor acceleration sensor |
| JPH10123166A (en) * | 1996-08-09 | 1998-05-15 | Denso Corp | Semiconductor acceleration sensor |
| JPH10123167A (en) * | 1996-08-09 | 1998-05-15 | Denso Corp | Semiconductor acceleration sensor |
| JPH10104264A (en) * | 1996-09-26 | 1998-04-24 | Japan Aviation Electron Ind Ltd | Acceleration sensor |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007069320A (en) * | 2005-09-08 | 2007-03-22 | Sony Corp | Function element and its manufacturing method |
| WO2013051068A1 (en) * | 2011-10-07 | 2013-04-11 | 株式会社日立製作所 | Inertial sensor |
| KR101323267B1 (en) * | 2012-03-09 | 2013-10-30 | 주식회사 파워엠엔씨 | a magnetic sensor using spacer |
| CN107399909A (en) * | 2017-09-06 | 2017-11-28 | 安徽凯盛基础材料科技有限公司 | The preparation method of solid phase converter glass microsphere |
| CN107555766A (en) * | 2017-09-06 | 2018-01-09 | 安徽凯盛基础材料科技有限公司 | The method that solid phase converter is made using glass microballoon |
| CN109724721A (en) * | 2019-01-21 | 2019-05-07 | 武汉大学 | The SiC high-temp pressure sensor and its manufacturing method of non-leaded package |
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