JPH11337368A - Magnetic detection circuit - Google Patents

Magnetic detection circuit

Info

Publication number
JPH11337368A
JPH11337368A JP14819398A JP14819398A JPH11337368A JP H11337368 A JPH11337368 A JP H11337368A JP 14819398 A JP14819398 A JP 14819398A JP 14819398 A JP14819398 A JP 14819398A JP H11337368 A JPH11337368 A JP H11337368A
Authority
JP
Japan
Prior art keywords
sensor
circuit
reference voltage
output
change
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14819398A
Other languages
Japanese (ja)
Inventor
Ryuichi Ando
隆一 安藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Seiki Co Ltd
Original Assignee
Nippon Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Seiki Co Ltd filed Critical Nippon Seiki Co Ltd
Priority to JP14819398A priority Critical patent/JPH11337368A/en
Publication of JPH11337368A publication Critical patent/JPH11337368A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a magnetism detection circuit in which the burden of its maintenance and its cost including a sensor can be reduced sharply. SOLUTION: A sensor 10, by which the change state of an object to be detected is detected as a change in magnetism, is provided. An output circuit 20 in which an output voltage Vm from the sensor 10 is compared with a reference voltage Vf and which outputs a pulse-shaped output voltage Vout according to the change state of the object to be detected is provided. A correction circuit 30, in which the reference voltage Vf is supplied to the output circuit 20 as a change-absorption reference voltage Vf' according to a change in the output voltage Vm, is installed between the sensor 10 and the output circuit 20.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、磁気抵抗素子を用
いて被検出対象の変位や回転等の変化状態を検出するた
めに使用される磁気検出回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic detection circuit used for detecting a change state such as displacement or rotation of a detection target using a magnetoresistive element.

【0002】[0002]

【従来の技術】近年、物体の変位や回転等の変化状態を
磁気抵抗素子を用いて検出し、この出力信号を処理する
回路としては、例えば、特許第2715997号公報,
実用新案登録第2525199号公報参照で開示されて
図3で示すように、磁気変化に応じて抵抗値が変化する
2個の磁気抵抗素子11,12を電源VccとアースG
ND間に対して直列に接続し、この中点電圧Vmをコン
パレータ等で構成される出力回路20にて抵抗21,2
2で設定される基準電圧Vfと比較することにより、横
軸を時間Tとした動作波形図である図4で示すように、
磁気変化をセンサ10の出力電圧Vmの変化(同図
(A)参照)に応じたハイ,ローの2値のパルス状の出
力電圧Voutの変化(同図(B)参照)で検出し、後
段に接続される計器装置(図示しない)へ検出電圧Vo
utとして出力するようになっている。なお、23は出
力回路20におけるハイ,ローの判定値となるヒステリ
シス幅(同図(C)参照)を作るための抵抗である。
2. Description of the Related Art In recent years, a circuit for detecting a change state such as displacement or rotation of an object using a magnetoresistive element and processing the output signal is disclosed in, for example, Japanese Patent No. 2715997,
As shown in FIG. 3 and disclosed in Japanese Utility Model Registration No. 2525199, two magnetoresistive elements 11 and 12 whose resistance values change according to a magnetic change are connected to a power supply Vcc and a ground G.
ND are connected in series with each other.
By comparing with the reference voltage Vf set in FIG. 2, as shown in FIG.
A magnetic change is detected by a change in a binary pulse-like output voltage Vout (see FIG. 2B) corresponding to a change in the output voltage Vm of the sensor 10 (see FIG. 2A), and a subsequent stage. To the measuring device (not shown) connected to
ut is output. Reference numeral 23 denotes a resistor for forming a hysteresis width (see FIG. 3C) serving as a high / low determination value in the output circuit 20.

【0003】[0003]

【発明が解決しようとする課題】斯かる構成では、セン
サ10の位置のズレによる磁界強度のバラツキ等の要因
により、横軸を時間Tとした動作波形図である図5で示
すように、センサ10の出力電圧Vmの特性が、設計時
(同図(A)参照)と実際(同図(B)参照)とで異な
ると、出力回路20の出力電圧Voutとして初期の特
性が得られないと言う問題がある。
In such a configuration, as shown in FIG. 5, which is an operation waveform diagram with the horizontal axis representing time T due to variations in the magnetic field strength due to the displacement of the position of the sensor 10, etc. If the characteristic of the output voltage Vm of the output circuit 10 differs between the design time (see FIG. 7A) and the actual one (see FIG. 7B), the initial characteristic cannot be obtained as the output voltage Vout of the output circuit 20. There is a problem to say.

【0004】[0004]

【課題を解決するための手段】前記課題を解決するため
の本発明は、被検出対象の変化状態を磁気の変化として
検出するセンサと、このセンサからの出力電圧Vmと基
準電圧Vfとを比較して前記被検出対象の変化状態に応
じたパルス状の出力電圧Voutを出力する出力回路と
を有し、出力電圧Vmの変動に応じて基準電圧Vfを変
動吸収基準電圧Vf’として前記出力回路へ供給する補
正回路を設けたものである。
According to the present invention, there is provided a sensor for detecting a change state of an object to be detected as a change in magnetism, and comparing an output voltage Vm from the sensor with a reference voltage Vf. An output circuit that outputs a pulsed output voltage Vout in accordance with the change state of the detection target, and sets the reference voltage Vf as a fluctuation absorption reference voltage Vf ′ in accordance with a change in the output voltage Vm. And a correction circuit for supplying the correction signal to the power supply.

【0005】また、被検出対象の変化状態を磁気の変化
として検出するセンサと、このセンサからの出力電圧V
mと基準電圧Vfとを比較して前記被検出対象の変化状
態に応じたパルス状の出力電圧Voutを出力する出力
回路とを有し、出力電圧Vmの変動平均値Vrを検出し
てこの変動平均値Vrを基準電圧Vfに加えた変動吸収
基準電圧Vf’を前記出力回路へ供給する補正回路を設
けたものである。
Also, a sensor for detecting a change state of a detection target as a change in magnetism, and an output voltage V from the sensor.
and an output circuit that compares m with the reference voltage Vf and outputs a pulsed output voltage Vout in accordance with the change state of the detection target. A correction circuit is provided for supplying a fluctuation absorption reference voltage Vf ′ obtained by adding the average value Vr to the reference voltage Vf to the output circuit.

【0006】また、被検出対象の変化状態を磁気の変化
として検出するセンサと、このセンサからの出力電圧V
mと基準電圧Vfとを比較して前記被検出対象の変化状
態に応じたパルス状の出力電圧Voutを出力する出力
回路とを有し、出力電圧Vmを抵抗とコンデンサとから
なる平滑回路により変動平均値Vrを検出してこの変動
平均値Vrを基準電圧Vfに加えた変動吸収基準電圧V
f’を前記出力回路へ供給する補正回路を設けたもので
ある。
Also, a sensor for detecting a change state of a detection target as a change in magnetism, and an output voltage V from the sensor.
and an output circuit for comparing the reference voltage Vf with the reference voltage Vf and outputting a pulsed output voltage Vout according to the change state of the detection target. The output voltage Vm is varied by a smoothing circuit including a resistor and a capacitor. The average value Vr is detected, and the fluctuation average value Vr is added to the reference voltage Vf.
A correction circuit for supplying f ′ to the output circuit is provided.

【0007】[0007]

【発明の実施の形態】被検出対象の変化状態を磁気の変
化として検出するセンサ10と、このセンサ10からの
出力電圧Vmと基準電圧Vfとを比較して前記被検出対
象の変化状態に応じたパルス状の出力電圧Voutを出
力する出力回路20とを有し、出力電圧Vmの変動に応
じて基準電圧Vfを変動吸収基準電圧Vf’として出力
回路20へ供給する補正回路30を設けた。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A sensor 10 for detecting a change state of an object to be detected as a change in magnetism, and an output voltage Vm from this sensor 10 and a reference voltage Vf are compared to determine the change state of the object to be detected. An output circuit 20 for outputting a pulsed output voltage Vout, and a correction circuit 30 for supplying the reference voltage Vf to the output circuit 20 as the fluctuation absorption reference voltage Vf 'according to the fluctuation of the output voltage Vm.

【0008】これにより、センサ10が特性上のバラツ
キを有しているとしても補正回路30により補正されて
歩留まりが向上し、また、センサ10と被検出対象との
位置関係の当初のズレや経時的変化を自動的に補正して
当初の特性を保つことができる。
As a result, even if the sensor 10 has variations in characteristics, the sensor 10 is corrected by the correction circuit 30 to improve the yield, and the positional relationship between the sensor 10 and the object to be detected is initially shifted and time-dependent. The target characteristics can be maintained by automatically correcting the target change.

【0009】また、被検出対象の変化状態を磁気の変化
として検出するセンサ10と、このセンサ10からの出
力電圧Vmと基準電圧Vfとを比較して前記被検出対象
の変化状態に応じたパルス状の出力電圧Voutを出力
する出力回路20とを有し、出力電圧Vmの変動平均値
Vrを検出してこの変動平均値Vrを基準電圧Vfに加
えた変動吸収基準電圧Vf’を出力回路20へ供給する
補正回路30を設けた。
Further, a sensor 10 for detecting a change state of the object to be detected as a magnetic change, and comparing an output voltage Vm from the sensor 10 with a reference voltage Vf, a pulse corresponding to the change state of the object to be detected. An output circuit 20 for outputting a V-shaped output voltage Vout, detecting a variation average value Vr of the output voltage Vm, and adding a variation absorption reference voltage Vf ′ obtained by adding the variation average value Vr to the reference voltage Vf. And a correction circuit 30 for supplying to the power supply.

【0010】これにより、センサ10が特性上のバラツ
キを有しているとしても補正回路30により補正されて
歩留まりが向上し、また、センサ10と被検出対象との
位置関係の当初のズレや経時的変化を自動的に補正して
当初の特性を保つことができる。
As a result, even if the sensor 10 has a variation in characteristics, the yield is improved by the correction by the correction circuit 30, and the initial positional deviation and the aging of the positional relationship between the sensor 10 and the object to be detected are improved. The target characteristics can be maintained by automatically correcting the target change.

【0011】また、被検出対象の変化状態を磁気の変化
として検出するセンサ10と、このセンサ10からの出
力電圧Vmと基準電圧Vfとを比較して前記被検出対象
の変化状態に応じたパルス状の出力電圧Voutを出力
する出力回路20とを有し、出力電圧Vmを抵抗とコン
デンサとからなる平滑回路により変動平均値Vrを検出
してこの変動平均値Vrを基準電圧Vfに加えた変動吸
収基準電圧Vf’を出力回路20へ供給する補正回路3
0を設けた。
Further, a sensor 10 for detecting the change state of the object to be detected as a magnetic change, and comparing an output voltage Vm from the sensor 10 with a reference voltage Vf to generate a pulse corresponding to the change state of the object to be detected. And an output circuit 20 for outputting a V-shaped output voltage Vout. The output voltage Vm is detected by a smoothing circuit including a resistor and a capacitor to detect a variation average value Vr, and the variation average value Vr is added to the reference voltage Vf. Correction circuit 3 for supplying absorption reference voltage Vf 'to output circuit 20
0 was provided.

【0012】これにより、センサ10が特性上のバラツ
キを有しているとしても補正回路30により補正されて
歩留まりが向上し、また、センサ10と被検出対象との
位置関係の当初のズレや経時的変化を自動的に補正して
当初の特性を保つことができる。
As a result, even if the sensor 10 has a variation in characteristics, the yield is improved by the correction by the correction circuit 30, and the initial positional deviation and the aging of the positional relationship between the sensor 10 and the object to be detected are improved. The target characteristics can be maintained by automatically correcting the target change.

【0013】[0013]

【実施例】本発明を、図1,図2に示した実施例に基づ
き説明するが、図3〜図5に示した従来例と同一若しく
は相当個所には、同一符号を付してその詳細な説明を省
く。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to the embodiments shown in FIGS. 1 and 2. The same or corresponding parts as those in the conventional example shown in FIGS. Omit the explanation.

【0014】本発明の特徴は、センサ10と出力回路2
0との間に補正回路30を介在させたことにあり、この
補正回路30は、抵抗31とコンデンサ32からなる平
滑回路と抵抗33,34とから構成されるものである。
The present invention is characterized in that the sensor 10 and the output circuit 2
Since the correction circuit 30 is interposed between 0 and 0, the correction circuit 30 includes a smoothing circuit including a resistor 31 and a capacitor 32 and resistors 33 and 34.

【0015】抵抗31とコンデンサ32との直列回路を
磁気抵抗素子11,12の接続中点とアースGNDとの
間に接続し、この直列抵抗の接続中点と抵抗21,22
の接続中点とを夫々抵抗33,34を介して出力回路2
0の基準入力端子へ接続し、この出力回路20の比較入
力端子には従来例と同様に磁気抵抗素子11,12の接
続中点を接続する。
A series circuit of a resistor 31 and a capacitor 32 is connected between the connection midpoint of the magnetoresistive elements 11 and 12 and the ground GND, and the connection midpoint of this series resistor and the resistors 21 and 22 are connected.
The output circuit 2 is connected to the connection middle point through resistors 33 and 34, respectively.
The reference input terminal of the output circuit 20 is connected to the middle point of connection between the magnetoresistive elements 11 and 12 as in the conventional example.

【0016】すなわち、出力回路20の比較入力端子に
はセンサ10の出力電圧Vmが入力し、出力回路20の
基準入力端子には抵抗21,22で設定される基準電圧
Vfと抵抗31とコンデンサ32とで定まる電圧Vrと
の合成電圧が変動吸収基準電圧Vf’として入力するこ
ととなる。
That is, the output voltage Vm of the sensor 10 is inputted to the comparison input terminal of the output circuit 20, and the reference voltage Vf set by the resistors 21 and 22, the resistor 31, and the capacitor 32 are inputted to the reference input terminal of the output circuit 20. Will be input as the fluctuation absorption reference voltage Vf ′.

【0017】斯かる構成によれば、センサ10の位置の
ズレによる磁界強度のバラツキ等の要因により、横軸を
時間Tとした動作波形図である図2で示すように、セン
サ10の出力電圧Vmの特性が、設計時(同図(A)参
照)から実際(同図(B)参照)のように変動しても、
同時に出力回路20の変動吸収基準電圧Vf’も同じ割
合、すなわち、出力電圧Vmを抵抗31とコンデンサ3
2とからなる平滑回路により求めた変動平均値Vrに応
じて変動するため、結果として出力回路20の検出電圧
Voutに変化が生じないものとなる。
According to such a configuration, the output voltage of the sensor 10 is changed as shown in FIG. 2, which is an operation waveform diagram in which the horizontal axis represents time T, due to variations in the magnetic field intensity due to the displacement of the position of the sensor 10. Even if the characteristic of Vm fluctuates from the design time (see FIG. 3A) to the actual (see FIG. 3B),
At the same time, the fluctuation absorption reference voltage Vf ′ of the output circuit 20 has the same ratio, that is, the output voltage Vm is
2, the detection voltage Vout of the output circuit 20 does not change as a result.

【0018】すなわち、抵抗31とコンデンサ32との
回路により、センサ10の出力電圧Vmが平均化されて
直流レベルの電圧Vrとなり、一方、抵抗33,34と
は、当初の基準電圧Vfを電圧Vrで補正したものを変
動吸収基準電圧Vf’として出力回路20へ加える。よ
って、抵抗34を0Ωとすれば、Vf’=Vfとなっ
て、補正はされないこととなり、また、抵抗33を0Ω
とすれば、Vf’=Vrとなって、固定分のVfが効か
なくなる。
That is, the output voltage Vm of the sensor 10 is averaged by the circuit of the resistor 31 and the capacitor 32 to become the voltage Vr of the DC level, while the resistors 33 and 34 use the initial reference voltage Vf as the voltage Vr. Is corrected and applied to the output circuit 20 as the fluctuation absorption reference voltage Vf ′. Therefore, if the resistance 34 is set to 0Ω, Vf ′ = Vf, so that no correction is performed, and the resistance 33 is set to 0Ω.
Then, Vf ′ = Vr, and the fixed Vf becomes ineffective.

【0019】従って、設計時の基準電圧Vfと、センサ
10の取付変動等によって生じる出力電圧Vmの変化の
平均値Vrを加えて、変動吸収基準電圧Vf’=Vf+
Vrとすることにより、出力回路20の検出が安定して
行われるものとなる。
Therefore, the reference voltage Vf at the time of design and the average value Vr of the change of the output voltage Vm caused by the mounting fluctuation of the sensor 10 and the like are added, and the fluctuation absorbing reference voltage Vf ′ = Vf +
By setting Vr, the detection of the output circuit 20 can be performed stably.

【0020】本発明の磁気検出回路は、例えば、車両の
走行速度を検出するために用いられる磁気抵抗素子に適
用することができ、車両走行時の振動等によりセンサ1
0と検出のための被検出対象であって車軸の回転に連動
するギヤ(図示しない)との機械的位置に変化が生じて
も、変化した出力Vmに応じて出力回路20での判定は
行えるため、特別に定期点検等を行う必要がなく、信頼
性が向上する。
The magnetic detection circuit according to the present invention can be applied to, for example, a magnetoresistive element used for detecting the traveling speed of a vehicle, and the sensor 1 detects vibrations during traveling of the vehicle.
Even if a mechanical position of a gear (not shown) interlocked with the rotation of the axle, which is a detection target for detection of 0, changes, a determination can be made in the output circuit 20 in accordance with the changed output Vm. Therefore, it is not necessary to perform a special periodic inspection, and the reliability is improved.

【0021】なお、センサ10は、2個の磁気抵抗素子
11,12で構成する他に、前記先行文献で開示されて
いるような4個の磁気抵抗素子をブリッジ状に接続して
構成するものであっても同様に適用可能である。
The sensor 10 is constructed by connecting two magnetoresistive elements 11 and 12 and connecting four magnetoresistive elements as disclosed in the above-mentioned prior art document in a bridge-like manner. However, the same is applicable.

【0022】また、基準電圧Vfを決める抵抗21,2
2は、少なくとも一方を可変式抵抗として、使用者が任
意にレベルを調整する構成とすることもできる。
The resistances 21 and 21 for determining the reference voltage Vf
2 may be configured such that at least one of the resistors is a variable resistor and the user can arbitrarily adjust the level.

【0023】[0023]

【発明の効果】本発明によれば、センサを構成する磁気
抵抗素子が特性上のバラツキを有しているとしてもセン
サとして動作するため歩留まりが向上する。また、セン
サと被検出対象との位置関係の当初のズレや経時的変化
を自動的に補正して当初の特性を保つことができる。よ
って、センサを含めた磁気抵抗回路のメンテナンスやコ
ストの負担を大幅に低減することができる。
According to the present invention, the yield can be improved because the sensor operates as a sensor even if the magnetoresistive elements constituting the sensor have variations in characteristics. In addition, the initial deviation and the change over time of the positional relationship between the sensor and the detection target can be automatically corrected to maintain the initial characteristics. Therefore, maintenance and cost burden of the magnetoresistive circuit including the sensor can be greatly reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の実施例の回路図。FIG. 1 is a circuit diagram of an embodiment of the present invention.

【図2】 同上の動作波形図。FIG. 2 is an operation waveform diagram of the above.

【図3】 従来例の回路図。FIG. 3 is a circuit diagram of a conventional example.

【図4】 同上の動作波形図。FIG. 4 is an operation waveform chart of the above.

【図5】 同上の動作波形図。FIG. 5 is an operation waveform chart of the above.

【符号の説明】[Explanation of symbols]

10 センサ 11,12 磁気抵抗素子 20 出力回路 30 補正回路 Reference Signs List 10 sensor 11, 12 magnetoresistive element 20 output circuit 30 correction circuit

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 被検出対象の変化状態を磁気の変化とし
て検出するセンサと、このセンサからの出力電圧Vmと
基準電圧Vfとを比較して前記被検出対象の変化状態に
応じたパルス状の出力電圧Voutを出力する出力回路
とを有し、前記出力電圧Vmの変動に応じて前記基準電
圧Vfを変動吸収基準電圧Vf’として前記出力回路へ
供給する補正回路を設けたことを特徴とする磁気検出回
路。
1. A sensor for detecting a change state of an object to be detected as a change in magnetism, and comparing an output voltage Vm from the sensor with a reference voltage Vf to generate a pulse-like signal corresponding to the change state of the object to be detected. An output circuit that outputs an output voltage Vout, and a correction circuit that supplies the reference voltage Vf to the output circuit as a variation absorption reference voltage Vf ′ in accordance with a variation in the output voltage Vm. Magnetic detection circuit.
【請求項2】 被検出対象の変化状態を磁気の変化とし
て検出するセンサと、このセンサからの出力電圧Vmと
基準電圧Vfとを比較して前記被検出対象の変化状態に
応じたパルス状の出力電圧Voutを出力する出力回路
とを有し、前記出力電圧Vmの変動平均値Vrを検出し
てこの変動平均値Vrを前記基準電圧Vfに加えた変動
吸収基準電圧Vf’を前記出力回路へ供給する補正回路
を設けたことを特徴とする磁気検出回路。
2. A sensor for detecting a change state of a detection target as a change in magnetism, and comparing an output voltage Vm from the sensor with a reference voltage Vf to generate a pulse-like signal corresponding to the change state of the detection target. An output circuit for outputting an output voltage Vout, detecting a variation average value Vr of the output voltage Vm, and adding a variation absorption reference voltage Vf ′ obtained by adding the variation average value Vr to the reference voltage Vf to the output circuit. A magnetic detection circuit comprising a correction circuit for supplying the magnetic field.
【請求項3】 被検出対象の変化状態を磁気の変化とし
て検出するセンサと、このセンサからの出力電圧Vmと
基準電圧Vfとを比較して前記被検出対象の変化状態に
応じたパルス状の出力電圧Voutを出力する出力回路
とを有し、前記出力電圧Vmを抵抗とコンデンサとから
なる平滑回路により変動平均値Vrを検出してこの変動
平均値Vrを前記基準電圧Vfに加えた変動吸収基準電
圧Vf’を前記出力回路へ供給する補正回路を設けたこ
とを特徴とする磁気検出回路。
3. A sensor for detecting a change state of a detection target as a change in magnetism, and comparing an output voltage Vm from the sensor with a reference voltage Vf to generate a pulse-like signal corresponding to the change state of the detection target. An output circuit for outputting an output voltage Vout, wherein the output voltage Vm is detected by a smoothing circuit composed of a resistor and a capacitor to detect a fluctuation average value Vr, and the fluctuation average value Vr is added to the reference voltage Vf. A magnetic detection circuit comprising a correction circuit for supplying a reference voltage Vf 'to the output circuit.
JP14819398A 1998-05-29 1998-05-29 Magnetic detection circuit Pending JPH11337368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14819398A JPH11337368A (en) 1998-05-29 1998-05-29 Magnetic detection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14819398A JPH11337368A (en) 1998-05-29 1998-05-29 Magnetic detection circuit

Publications (1)

Publication Number Publication Date
JPH11337368A true JPH11337368A (en) 1999-12-10

Family

ID=15447345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14819398A Pending JPH11337368A (en) 1998-05-29 1998-05-29 Magnetic detection circuit

Country Status (1)

Country Link
JP (1) JPH11337368A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7391206B2 (en) 2004-03-15 2008-06-24 Dr. Johannes Heidenhain Gmbh Magnetic detection circuit and encoder
JP2008249452A (en) * 2007-03-30 2008-10-16 Tdk Corp Magnetic detector
JP2011513730A (en) * 2008-02-27 2011-04-28 アレグロ・マイクロシステムズ・インコーポレーテッド Hysteresis offset cancellation for magnetic sensors

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7391206B2 (en) 2004-03-15 2008-06-24 Dr. Johannes Heidenhain Gmbh Magnetic detection circuit and encoder
JP2008249452A (en) * 2007-03-30 2008-10-16 Tdk Corp Magnetic detector
JP2011513730A (en) * 2008-02-27 2011-04-28 アレグロ・マイクロシステムズ・インコーポレーテッド Hysteresis offset cancellation for magnetic sensors
JP2014209124A (en) * 2008-02-27 2014-11-06 アレグロ・マイクロシステムズ・エルエルシー Hysteresis offset cancellation for magnetic sensors
US9046562B2 (en) 2008-02-27 2015-06-02 Allegro Microsystems, Llc Hysteresis offset cancellation for magnetic sensors

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