JPH11330287A - High-frequency semiconductor circuit package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce vibration fluctuation due to resonance and the passage loss of a package by providing a conductor for electrically connecting a first electrode to a second electrode. SOLUTION: For example, a high-frequency signal that leaks from a signal input terminal 2a and a signal output terminal 2b or the like being composed by a strip conductor, metal wires 3a and 3b, a semiconductor circuit 4, or the like is propagated to a second electrode 6a and a metal lid 7 on the upper surface of a package. However, as a conductor for connecting a first electrode 6c to the second electrode 6a, through holes 8 (8a or 8l) and 9 (9a or 9p) for feeding through dielectrics 1a and 1b or a dielectric 1c are formed, thus preventing the second electrode 6a and the metal lid 7 being used as a single substance from resonating, weakening the degree of connection between the second electrode 6a and the metal lid 7 and the signal input terminal 2a, the signal output terminal 2b, the metal wires 3a and 3b, the semiconductor circuit 4, or the like, and hence greatly reducing the passage loss of the package.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for sealing a high-frequency semiconductor circuit operating in a microwave band or a millimeter wave band (hereinafter, simply referred to as "package").

[0002]

2. Description of the Related Art FIG. 17 is a perspective view showing the structure of a conventional package shown on page 29 of the catalog "Surface Wave Filter / Surface Wave Resonator" of Murata Manufacturing, February 1991, and FIG.
Is a side view, FIG. 19 is a plan view, and FIG. 20 is a bottom view. In the figure, reference numerals 1a, 1b, 1c denote dielectrics, 2a, 2b, 2c, 2d, 2f, 2g, 2h, terminals, and 7 a metal cover. Note that in this structure, the metal lid 7 is not electrically connected to the ground conductor.

Next, this operation will be described. Dielectric 1a, 1
The signal input to the signal input terminal 2a composed of the strip conductor provided on the "b" is input into the package. The signal output from the inside of the package is output to the outside of the package via the signal output terminal 2b.

[0004] FIG. 21 shows a conventional transmission / reception I shown in the 112th Annual Conference of the Institute of Electronics, Information and Communication Engineers.
It is a top view which shows the structure of C. In the figure, reference numeral 4 denotes a semiconductor circuit, 11 denotes a high-frequency signal input terminal for reception, 12 denotes a reception circuit, 13 denotes a local oscillation wave input terminal, 14 denotes an intermediate frequency signal output terminal, 15 denotes a baseband signal input terminal, and 16 denotes a transmission. The circuit 18 is a transmission high-frequency signal output terminal.
In this structure, the transmission / reception circuit is provided on one semiconductor substrate. However, the local oscillation wave input terminal 13 is shared for transmission and reception, and the local oscillation input terminal 13 and the reception high-frequency signal input terminal are connected. Note that the (high-frequency terminal) is not provided on the opposite side of the substrate.

Next, this operation will be described. The reception high-frequency signal input to the reception high-frequency signal input terminal 11 is amplified by the reception circuit 12, and is further frequency-mixed with the local oscillation wave input from the local oscillation wave input terminal 13 by the reception circuit 12, so that the intermediate frequency is intermediate. It is converted to a frequency signal. The intermediate frequency signal thus generated is amplified by the receiving circuit 12,
The signal is output from the intermediate frequency signal output terminal 14.

The baseband signal input from the baseband signal input terminal 15 is amplified by the transmission circuit 16, and then the local oscillation wave input from the local oscillation wave input terminal 13 is modulated by the transmission circuit 16. And generate a high-frequency signal. The high-frequency signal thus generated is amplified by the transmission circuit 16 and then output from the transmission high-frequency signal output terminal 18.

[0007]

The conventional package is:
With the above-described configuration, there is a problem in that high-frequency signals leaked from terminals and the like resonate at a metal cover or an electrode disposed on the upper surface of the package, thereby increasing the passage loss of the package. Also, since the local oscillation wave input terminals of the transmission circuit and the reception circuit are configured in common,
The isolation between the transmitting circuit and the receiving circuit deteriorates,
There was also a problem. An object of the present invention is to solve these problems and provide a highly accurate package.

[0008]

According to a first aspect of the present invention, there is provided a package formed by laminating dielectrics, wherein a first electrode is provided on a bottom surface of the package and a second electrode is provided on a top surface of the package. And a conductor for electrically connecting the first electrode and the second electrode.

According to a second aspect of the present invention, there is provided a package in which a dielectric is laminated and a semiconductor circuit is disposed in an installation space formed therein and sealed with a metal cover. The first electrode, the second on the top of the package
In a high-frequency semiconductor circuit package having electrodes of
A conductor is provided for electrically connecting the first electrode and the second electrode, and the second electrode and the metal lid are electrically connected.

According to a third aspect of the present invention, in the high frequency semiconductor circuit package according to the second aspect, the electrical connection between the second electrode and the metal cover is such that the second electrode and a part of the metal cover are in direct contact. It is characterized in that it is configured to be.

[0011] The invention of claim 4 is the invention of claim 1 or claim 2.
Wherein the conductor is a through hole formed to penetrate the laminated dielectric.

[0012] The invention of claim 5 is the invention of claim 1 or claim 2.
Wherein the conductor is a plurality of strip conductors disposed at appropriate intervals on the side surface of the package made of the laminated dielectric.

According to a sixth aspect of the present invention, there is provided a package in which a semiconductor is arranged in an installation space formed by laminating a dielectric, wherein a first electrode is provided on a bottom surface of the package, A high-frequency semiconductor circuit package having a second electrode on an upper surface, a first conductor having one end connected to the second electrode and disposed on an inner wall of the installation space, and the first conductor and one end connected to the first conductor; The second electrode and the first electrode are electrically connected to each other via a second conductor connected to the other end and connected to the first electrode.

According to a seventh aspect of the present invention, in the high frequency semiconductor circuit package according to the sixth aspect, the first conductor is a strip conductor.

According to an eighth aspect of the present invention, in the high-frequency semiconductor circuit package according to the sixth aspect, the second conductor is a through hole formed through the dielectric.

According to a ninth aspect of the present invention, in the high-frequency semiconductor circuit package, the high-frequency semiconductor circuit includes a transmitting circuit and a receiving circuit, and includes a transmitting high-frequency signal output terminal, a receiving local oscillation wave terminal, and a receiving high-frequency signal. The input terminal and the local oscillation wave input terminal for transmission are arranged at positions substantially separated from each other according to the form of the package.

According to a tenth aspect of the present invention, in the high frequency semiconductor circuit package according to the ninth aspect, the package is rectangular, and one of two opposing sides of the rectangular package has a transmitting high frequency signal. An output terminal and a high-frequency signal input terminal for reception are arranged, and a local oscillation wave input terminal for transmission and a local oscillation wave terminal for reception are arranged on the other side.

According to an eleventh aspect of the present invention, in the high frequency semiconductor circuit package according to the ninth or tenth aspect, a first ground terminal is provided between the transmitting high frequency signal output terminal and the receiving high frequency signal input terminal. Wherein a second ground terminal is provided between the transmission local oscillation wave input terminal and the reception local oscillation wave input terminal, and the first ground terminal and the second ground terminal are connected by a conductor. I do.

According to a twelfth aspect of the present invention, in the high frequency semiconductor circuit package according to the eleventh aspect, the conductor is disposed between the transmitting circuit and the receiving circuit on the semiconductor substrate.

According to a thirteenth aspect of the present invention, in the high frequency semiconductor circuit package according to the tenth, eleventh or twelfth aspect, the conductor is a strip conductor.

According to a fourteenth aspect, there is provided a high-frequency semiconductor circuit package obtained by combining at least two of the first to thirteenth aspects.

[0022]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 An embodiment according to the first to fourth aspects of the present invention will be described with reference to FIGS. 1 is a perspective view of the package, FIG. 2 is a bottom view thereof, FIG. 3 is a plan view thereof, FIG. 4 is a side view thereof, and FIG.
Is a plan view showing a state where the lid is removed, and FIG.
7 is a sectional view taken along the line BB of FIG. 5, FIG. 8 is a plan view of the dielectric 1a, and FIG. 9 is a plan view of the dielectric 1b. 2a, 2b, 2c, 2d, 2e, 2f, 2g, 2h in the figure are terminals, 3a, 3b, 3c, 3d, 3e, 3f, 3g, 3
h is a metal wire, 5a and 5b are connection terminals, 8a and 8b,
8c, 8d, 8e, 8f, 8g, 8h, 8i, 8j, 8
k, 8l are through-holes connecting the first electrode 6a and the electrode 6b, 9a, 9b, 9c, 9d, 9e, 9f, 9
g, 9h, 9i, 9j, 9k, 91, 9m, 9n, 9
Reference numerals o and 9p denote through holes for connecting the electrode 6b and the second electrode 6c. The same parts as those in the above embodiment are denoted by the same reference numerals, and description thereof will be omitted.

This package is composed of three dielectrics molded in a plate shape from, for example, ceramic or the like. The lowermost layer is a first dielectric 1a, on the lower surface (rear surface) of which a first electrode 6c is provided. The intermediate layer is the second dielectric 1b
A space for installing a semiconductor circuit is formed through the center portion thereof, and an electrode 6b is provided on the lower surface of the dielectric 1b. The uppermost layer is a third dielectric 1c, and a space for installing a semiconductor circuit is formed through the center of the third dielectric 1c. A second electrode 6c surrounds the opening edge of the space on the upper surface of the dielectric 1c. It is provided as follows. In the above-mentioned two spaces formed in the second and third dielectrics 1b and 1c, a high-frequency semiconductor circuit (hereinafter simply referred to as a semiconductor circuit)
An installation space in which the semiconductor circuit 4 is installed is configured, and an upper opening edge of the installation space is closed by the lid 7 after the semiconductor circuit 4 is installed. Incidentally, a metal cover is usually used for the cover 7. The first of the bottom of the package thus formed
And the second electrode 6a on the upper surface are electrically connected by a conductor. In this embodiment, as a conductor connected to the first electrode 6c and the second electrode 6a, a dielectric 1a and a dielectric 1b or a through hole 8 penetrating the dielectric 1c is used.
(8a to 8l) and through holes 9 (9a to 9p) are formed.

Next, the operation will be described. In FIG. 1, the high-frequency signal is constituted by a strip conductor provided to extend from the lower surface (back surface) of the dielectric 1a to the side surface of the dielectric 1a, the side surface of the dielectric 1b, and further to the upper surface of the dielectric 1b. Input terminal 2a (hereinafter, referred to as a signal input terminal). In FIG. 5, a high-frequency signal input from a signal input terminal 2a is input via a metal wire 3a to a connection terminal 5a provided on a semiconductor circuit 4 disposed in an installation space inside a package. And this high frequency signal
It is output from the connection terminal 5b of the semiconductor circuit 4 and provided to extend from the back surface of the dielectric 1a to the side surface of the dielectric 1a, the side surface of the dielectric 1b, and the upper surface of the dielectric 1b via the metal wire 3b. Terminal 2b composed of strip conductor
(Hereinafter, referred to as a signal output terminal).

Here, the high frequency signal leaked from the signal input terminal 2a and the signal output terminal 2b, etc. constituted by strip conductors, the above-mentioned metal wires 3a, 3b, the semiconductor circuit 4, etc. Electrode 6a and metal lid 7
To be propagated. However, the second electrode 6a has a through hole 8 formed in the third and second dielectrics and a through hole 9 formed in the first dielectric (for example, the through hole 8l and the through hole 9e or the through hole 8e). And a through hole 9h) or a through hole 8 formed in the third and second dielectrics, an electrode 6b formed on the lower surface of the second dielectric 1b, and a through hole formed in the first dielectric 1a. It is electrically connected to the first electrode 6c via the hole 9 or the like. Also, as can be seen from FIG. 3, the metal lid 7 is partially electrically connected to and directly connected to the electrode 6a, so that the metal lid 7 is also electrically connected to the first electrode 6c. Have been.

Accordingly, the high-frequency signal propagated to the second electrode 6a and the metal cover 7 does not resonate as the second electrode 6a and the metal cover 7 alone, so that the high-frequency signal does not resonate with the second electrode 6a or the metal cover 7. The degree of coupling with the signal input terminal 2a, the signal output terminal 2b, the metal wires 3a, 3b, the semiconductor circuit 4, or the like is weakened, and the passage loss of the package is greatly reduced.
Although the lid 7 is a metal lid in the first embodiment,
The same effect can be obtained even when the metal lid is not used.

Embodiment 2 FIG. An embodiment according to the fifth aspect of the present invention will be described with reference to FIGS.
FIG. 10 is a plan view of the package, and FIG. 11 is a side view thereof. As in the first embodiment, this package is also formed by laminating first, second, and third dielectrics 1a, 1b, and 1c, a semiconductor circuit 4 is installed in an internal installation space, and a lower surface of the package is provided. The first electrode 6c is provided with a second electrode 6a on the upper surface. The same parts as those in the above-described embodiment are denoted by the same reference numerals, and description thereof will be omitted.

In this embodiment, the first electrode 6c and the second
Strip conductors 10a, 10b, 10c, 10d, 10e, 10f, 1
0g, 10h, 10i, 10j, 10k, 10l, 10
m, 10n, 10o, and 10p, and each of these strip conductors 10 (10a to 10p) has one end connected to the first electrode 6c and the other end connected to the second electrode 6a, A plurality of packages are arranged at appropriate intervals on the side of the package.

Next, the operation will be described. In addition, description parts common to the first embodiment will be omitted. The high-frequency signal leaked from the signal input terminal 2a, the signal output terminal 2b, the metal wires 3a, 3e, the semiconductor circuit 4, and the like constituted by strip conductors propagates to the second electrode 6 and the metal cover 7, The second electrode 6a is electrically connected to the first electrode 6c via the strip conductor 10, and the metal cover 7 is also in direct contact with the second electrode 6a such that a part thereof overlaps the second electrode 6a to electrically connect the second electrode 6a. , It is also electrically connected to the electrode 6c.

Therefore, the high-frequency signal propagated to the second electrode 6a and the metal cover 7 does not resonate by itself as in the first embodiment.
The degree of coupling between the second electrode 6a and the metal cover 7 and the signal input terminal 2a, the signal output terminal 2b, or the metal wires 3a, 3e, the semiconductor circuit 4, or the like is weakened, and the passage loss of the package is greatly reduced.

Embodiment 3 Embodiments according to the sixth to eighth aspects of the present invention will be described with reference to FIGS. FIG. 12 is a plan view of the package, and FIG. 13 is a sectional view thereof. The same parts as those in the above embodiment are denoted by the same reference numerals, and description thereof will be omitted.

Embodiment 3 is also a package in which the first, second, and third dielectrics 1a, 1b, and 1c are stacked, and a semiconductor circuit is arranged in an installation space formed therein. The package has a first electrode 6c on the bottom surface and a second electrode 6a on the top surface. The same parts as those in the first and second embodiments are denoted by the same reference numerals, and description thereof is omitted.

In this embodiment, the first electrode 6c and the second
The first conductor and the second conductor
Conductors are used. One end of the strip conductor 10 (10a to 10p) used as the first conductor is connected to the second electrode 6a and disposed on the inner wall of the installation space. The through holes 9a to 9f used as the second conductor (see FIG. 2 for 9e to 9f)
One end is connected to the first conductor 10, and the other end is connected to the first electrode 6 c so as to penetrate the first dielectric 1 a. The first conductor 10 and the second conductor 9
, The second electrode 6a and the first electrode 6c are electrically connected.

Next, the operation will be described. The same parts as those in the first and second embodiments are denoted by the same reference numerals, and description thereof is omitted. High-frequency signals leaked from the signal input terminal 2a, the signal output terminal 2b, the metal wires 3a, 3e, the semiconductor circuit 4, and the like constituted by the strip conductor 10 propagate to the second electrode 6a and the metal cover 7. The second electrode 6a is connected to the strip conductor 1
0, the electrode 6b of the second dielectric 1b, and the first electrode 6c through the through hole 9. In addition, since the metal lid 7 is electrically connected to the second electrode 6a, it is also electrically connected to the first electrode 6c. Therefore, the high-frequency signal propagated to the second electrode 6a or the metal cover 7 does not resonate as a single unit as the second electrode 6a or the metal cover 7, and thus the signal input terminal is connected to the second electrode 6a and the metal cover 7. 2a, the signal output terminal 2b, or the metal wires 3a, 3e, or the degree of coupling with the semiconductor circuit 4, etc., is weakened, and the passage loss of the package is greatly reduced.

Embodiment 4 FIG. An embodiment according to claims 9 and 10 will be described with reference to FIG.
FIG. 14 is a plan view of the high-frequency semiconductor circuit package,
In the drawing, reference numeral 11 denotes a receiving high-frequency signal input terminal, 12 denotes a receiving circuit, 13 denotes a receiving local oscillation wave input terminal, 14 denotes an intermediate frequency signal output terminal, 15 denotes a baseband signal input terminal,
16 is a transmission circuit, 17 is a local oscillation wave input terminal for transmission, 1
Reference numeral 8 denotes a transmission high-frequency signal output terminal. The same parts as those in the above embodiment are denoted by the same reference numerals, and description thereof will be omitted.

In this embodiment, a package is formed by laminating dielectrics. The package has a first electrode 6c on the bottom surface of the package and a second electrode 6a on the top surface of the package. And other types of packages such as a mold package. By the way, the high-frequency semiconductor circuit of this high-frequency semiconductor circuit package includes the transmission circuit 1.
6 and a reception circuit 12, and a transmission high-frequency signal output terminal 18 and a reception local oscillation wave terminal 13, a reception high-frequency signal input terminal 11 and a transmission local oscillation wave input terminal 17 are formed in a package form. Accordingly, each is disposed in a substantially remote isolated location.

When the package is rectangular as shown in the figure, for example, one of two opposing sides of the rectangular package has a transmitting high-frequency signal output terminal 18 and a receiving high-frequency signal input terminal. On the other side, for example, a local oscillation wave input terminal 17 for transmission and a local oscillation wave terminal 13 for reception
Are arranged respectively.

Next, the operation will be described. The reception high-frequency signal input from the reception high-frequency signal input terminal 11 is supplied to a reception circuit 12 provided on the semiconductor circuit 4 via the metal wire 3a.
Is input to On the other hand, the local oscillation wave for reception input to the local oscillation wave input terminal for reception 13 is input to the reception circuit 12 provided on the semiconductor circuit 4 via the metal wire 3b. In the receiving circuit 12, the high-frequency signal is frequency-converted to generate an intermediate frequency signal. The generated intermediate frequency signal is supplied to the intermediate frequency signal output terminal 14 via the metal wire 3c.
Output from

The baseband signal input from the baseband signal input terminal 15 is input to the transmission circuit 16 provided on the semiconductor circuit 4 via the metal wire 3d.
On the other hand, the local oscillation wave for transmission input from the local oscillation wave input terminal 17 for transmission is transmitted to the transmission circuit 1 via the metal wire 3e.
6 is input. In the transmission circuit 16, the transmission local oscillation wave is modulated by a baseband signal, and a high-frequency signal is generated. The generated high-frequency signal is a metal wire 3f
Is output from the transmission high-frequency signal output terminal 18 via the.

If the isolation between the high-frequency signal input terminal 11 for reception and the local oscillation wave input terminal 17 for transmission is not sufficient, the local oscillation wave for transmission is input to the receiving circuit 12 and becomes unnecessary. The intermediate frequency signal is generated. or,
Even when the isolation between the receiving local oscillation wave input terminal 13 and the transmitting high frequency signal output terminal 18 is not sufficient,
The local oscillation wave for reception is output from the transmission high-frequency signal output terminal 18 and outputs an unnecessary signal.

However, in the fourth embodiment, the reception high-frequency signal input terminal 11 and the transmission local oscillation wave input terminal 17 are provided, and the reception local oscillation wave input terminal 13 and the transmission high-frequency signal output terminal 18 are provided. Since the two packages are separated from each other on two opposite sides of the package and are opposed to each other, the isolation can be sufficiently increased, and the output of unnecessary signals can be greatly reduced.

In the fourth embodiment, the local oscillation wave is modulated by inputting the baseband signal to the transmitting circuit 16. However, the same effect can be obtained by inputting an intermediate frequency signal instead of the baseband signal and performing upconversion. Is obtained.

Embodiment 5 FIG. FIG. 15 is a plan view showing an embodiment according to the invention as set forth in claims 11 to 13. Reference numerals 19a and 19b in the drawings denote ground terminals.
In addition, the same reference numerals are given to parts common to the above-described embodiment,
The description is omitted.

This embodiment is a package in which a dielectric is laminated, in which a first electrode is provided on a bottom surface of the package and a second electrode is provided on an upper surface of the package. Other types of packages may be used. The high-frequency semiconductor circuit of this high-frequency semiconductor circuit package includes a transmitting circuit 16 and a receiving circuit 12, and a first high-frequency signal output terminal 18 and a first high-frequency signal input terminal 11 are provided between the transmitting high-frequency signal output terminal 18 and the receiving high-frequency signal input terminal 11. A ground terminal 19a is provided, and a second ground terminal 19b is provided between the transmission local oscillation wave input terminal 17 and the reception local oscillation wave input terminal 13. The first ground terminal 19a and the second ground terminal 19b are connected by a conductor. As this conductor, a strip conductor 100 is provided between the transmission circuit 16 and the reception circuit 12 on the semiconductor substrate.

Next, the operation will be described. The description of the same parts as in the fourth embodiment is omitted. Receiving circuit 12
The local oscillation wave for reception leaked from the strip conductor 1
Propagate to 00. Strip conductor 100 is connected to first ground terminal 19a and second ground terminal 19b via metal wires 3b and 3h, respectively. Therefore, the local oscillation wave for reception propagated to the strip conductor 100 is, because the strip conductor 100 is grounded,
Propagation to the transmission circuit 16 is suppressed, and the isolation between the reception circuit 12 and the transmission circuit 16 is improved.

In this embodiment, the description has been given of the local oscillation wave for reception. However, the same applies to the reception high-frequency signal, the intermediate frequency signal, the baseband signal, the transmission local oscillation wave, and the transmission high-frequency signal.

In the above embodiment, the strip conductor 1
00, only the strip conductor 10
The same effect can be obtained even if a resistor is provided on 0.

In the above embodiment, the strip conductor 10
Although the two ends are connected to the ground terminals 19a and 19b via the metal wires 3b and 3h, the same effect can be obtained by connecting the center part of the strip conductor 100 to the ground terminals 19a and 19b.

In the above embodiment, the strip conductor 1
00 to the ground terminal 19 via the metal wires 3b and 3h.
However, the same effect can be obtained even if a resistor is provided between the strip conductor 100 and the metal wires 3b and 3h.

In the above embodiment, the case of a package in which dielectrics are stacked is described. However, the same effect can be obtained by using a package of another type such as a mold package.

In the above embodiment, the strip conductor 10
Although 0 is connected to the ground terminal via the metal wires 3b and 3h, the same effect can be obtained by connecting the semiconductor circuit 4 to the electrode 6 mounted (installed).

Embodiment 6 FIG. One embodiment of the present invention will be described with reference to the embodiment shown in FIG. FIG.
6 is the first embodiment of the invention described in claims 1 to 5
FIG. 11 is a plan view showing a combination of FIGS. 1 to 9 and Embodiment 5 of the present invention described in claims 11 and 12.
Note that the same reference numerals are given to the common parts in the embodiments, and the description thereof will be omitted.

Next, the operation will be described. The local oscillation wave for reception leaked from the receiving circuit 12 propagates to the strip conductor 100. The strip conductors 100 are metal wires 3b, 3
h are connected to the ground terminals 19a and 19b. The local oscillation wave for reception propagated to the strip conductor 100 is suppressed from propagating to the transmission circuit 16 because the strip conductor 100 is grounded.

Here, the signal input terminal 2a, the signal output terminal 2c and the metal wires 3a,
3c, the high-frequency signal leaked from the semiconductor circuit 4, etc.
The light propagates to the second electrode 6a and the metal lid 7. Second electrode 6a
Is electrically connected to the first electrode 6c via the through hole 8, the electrode 6b, and the through hole 9. Further, since the metal lid 7 is electrically connected to the first electrode 6a,
Similarly, it is electrically connected to the second electrode 6c.
For this reason, the high-frequency signal propagated to the second electrode 6a or the metal cover 7 does not resonate as the second electrode 6a or the metal cover 7 by itself. Terminal 2a, signal output terminal 2b, or metal wire 3
a, 3c, or the degree of coupling with the semiconductor circuit 4 or the like becomes weaker,
The passage loss of the package is greatly reduced.

Similarly, since the second electrode 6a and the metal cover 7 do not resonate as a single unit even when the local oscillation wave is applied, the second electrode 6a and the metal cover 7 are connected to the signal input terminal 2a and the signal output terminal. 2b or the degree of coupling with the metal wires 3g, 3i, the semiconductor circuit 4, or the like is weakened, and the passage loss of the package is greatly reduced.

[0056]

According to the first to eighth aspects of the present invention,
Even if high-frequency signals leaking from input / output terminals, metal wires, semiconductor circuits, etc. propagate to the electrodes on the top surface of the package, metal lids, etc., amplitude fluctuations due to resonance can be greatly reduced, and the passage loss of the package is reduced. It is possible to provide a small high-precision high-frequency semiconductor package.

According to the ninth, tenth and thirteenth aspects of the present invention, in the integrated transmitting / receiving module, the local oscillation wave terminal for transmission, the high-frequency signal output terminal for transmission, the high-frequency signal input terminal for reception, and the It is possible to provide a high-precision high-frequency semiconductor package with improved isolation from a local oscillation wave terminal, prevention of output of an unnecessary signal, and low package loss.

According to the eleventh to thirteenth aspects, in the integrated transmitting / receiving module, the isolation between the transmitting circuit and the receiving circuit can be improved, unnecessary signal output can be prevented, and the passage loss of the package can be reduced. It is possible to provide a small high-precision high-frequency semiconductor package.

According to the fourteenth aspect of the invention, it is possible to achieve the same effects as the combined invention. In particular, any one of the inventions described in claims 1 to 8, any one of the inventions described in claims 9 to 10, and any one of the inventions described in claims 11 to 13 According to the combination of at least two or more of the above, the above-described effects are overlapped or combined, and an extremely high-precision high-frequency semiconductor package can be provided.

[Brief description of the drawings]

FIG. 1 is a perspective view of a package according to a first embodiment.

FIG. 2 is a bottom view of FIG.

FIG. 3 is a plan view of FIG. 1;

FIG. 4 is a side view of FIG.

FIG. 5 is a plan view showing a state where a metal cover of FIG. 3 is removed.

6 is a sectional view taken along line AA of FIG.

FIG. 7 is a sectional view taken along line BB of FIG. 5;

FIG. 8 is a plan view of a first dielectric.

FIG. 9 is a plan view of a second dielectric.

FIG. 10 is a plan view of a package according to a second embodiment.

FIG. 11 is a side view of FIG.

FIG. 12 is a plan view of a package according to a third embodiment.

FIG. 13 is a sectional view of FIG.

FIG. 14 is a plan view showing Embodiment Mode 4.

FIG. 15 is a plan view of a package according to a fourth embodiment.

FIG. 16 is a plan view of a package according to a sixth embodiment.

FIG. 17 is a perspective view of a conventional package.

FIG. 18 is a side view of FIG.

19 is a plan view of FIG.

20 is a bottom view of FIG.

FIG. 21 is a plan view showing a structure of a conventional transmitting / receiving circuit.

[Explanation of symbols]

1a, 1b, 1c dielectrics, 2a, 2b, 2c, 2d,
2e, 2f, 2g, 2h terminals, 3a, 3b, 3c, 3
d, 3e, 3f, 3g, 3h metal wire, 4 semiconductor circuit, 5a, 5b connection terminal, 6a second electrode, 6b
Electrode, 6c First electrode, 7 Metal lid, 8 Through hole, 8a, 8b, 8c, 8d, 8e, 8f, 8g, 8
h, 8i, 8j, 8k, 8l Through holes connecting the electrodes 6a and 6b, 9 through holes, 9a, 9b,
9c, 9d, 9e, 9f, 9g, 9h, 9i, 9j, 9
k, 9l Through holes connecting the electrode 6b and the electrode 6c, 9m, 9n, 9o, 9p Through holes connecting the electrode 6b and the electrode 6c, 10 strip conductors, 10a, 1
0b, 10c, 10d, 10e, 10f, 10g, 10
h, 10i, 10j, 10k, 10l, 10m, 10
n, 10o, 10p strip conductor, 11 high-frequency signal input terminal for reception, 12 reception circuit, 13 local oscillation wave input terminal for reception, 14 intermediate frequency signal output terminal, 15
Baseband signal input terminal, 16 transmission circuit, 17 local oscillation wave input terminal for transmission, 18 high-frequency signal output terminal for transmission, 19a first ground terminal, 19b second ground terminal, 100 strip conductor.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Masatoshi Nakayama 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Inside Mitsubishi Electric Corporation (72) Inventor Yoshitada Iyama 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric Corporation

Claims (14)

[Claims] 1. A high-frequency semiconductor circuit package comprising a dielectric laminated body, comprising a first electrode on a bottom surface of the package and a second electrode on an upper surface of the package. A high-frequency semiconductor circuit package having a conductor for electrically connecting an electrode and a second electrode. 2. A package formed by laminating dielectrics, wherein a semiconductor circuit is arranged in an installation space formed therein and sealed with a metal lid, and a first electrode is provided on a bottom surface of the package. A high-frequency semiconductor circuit package including a second electrode on a top surface of the package, the conductor including a conductor for electrically connecting the first electrode and the second electrode, wherein the second electrode, the metal cover, Characterized by being electrically connected to each other. 3. The electrical connection between the second electrode and the metal lid,
3. The high-frequency semiconductor circuit package according to claim 2, wherein the second electrode and a part of the metal cover are in direct contact. 4. The high-frequency semiconductor circuit package according to claim 1, wherein the conductor is a through hole formed to penetrate the laminated dielectric. 5. The conductor according to claim 1, wherein the conductor is a plurality of strip conductors arranged at appropriate intervals on a side surface of the package made of the laminated dielectric.
2. The high-frequency semiconductor circuit package according to 1. 6. A package in which a semiconductor circuit is disposed in an installation space formed therein by laminating dielectrics, wherein a first electrode is provided on a bottom surface of the package, and a second electrode is provided on an upper surface of the package. A first conductor having one end connected to the second electrode and disposed on the inner wall of the installation space, and one end connected to the first conductor and the other end connected to the second electrode. A high-frequency semiconductor circuit package, wherein the second electrode and the first electrode are electrically connected via a second conductor arranged to be connected to the first electrode. 7. The high-frequency semiconductor circuit package according to claim 6, wherein the first conductor is a strip conductor. 8. The high-frequency semiconductor circuit package according to claim 6, wherein the second conductor is a through hole formed through the dielectric. 9. The high-frequency semiconductor circuit package, wherein the high-frequency semiconductor circuit includes a transmitting circuit and a receiving circuit, and includes a transmitting high-frequency signal output terminal, a receiving local oscillation wave terminal, a receiving high-frequency signal input terminal, and a transmitting high-frequency signal input terminal. A high-frequency semiconductor circuit package, wherein a local oscillation wave input terminal and a local oscillation wave input terminal are disposed at positions substantially separated from each other according to the form of the package. 10. A rectangular package, wherein one of two opposing sides of the rectangular package has a transmitting high-frequency signal output terminal and a receiving high-frequency signal input terminal, and the other has a transmitting high-frequency signal input terminal. The high-frequency semiconductor circuit package according to claim 9, wherein a local oscillation wave input terminal and a reception local oscillation wave terminal are arranged. 11. A first ground terminal is provided between a transmission high-frequency signal output terminal and the reception high-frequency signal input terminal, and a first ground terminal is provided between the transmission local oscillation wave input terminal and the reception local oscillation wave input terminal. The high-frequency semiconductor circuit package according to claim 9, wherein a second ground terminal is provided, and the first ground terminal and the second ground terminal are connected by a conductor. 12. The semiconductor device according to claim 11, wherein the conductor is disposed between the transmitting circuit and the receiving circuit on the semiconductor substrate.
2. The high-frequency semiconductor circuit package according to 1. 13. The high-frequency semiconductor circuit package according to claim 10, wherein the conductor is a strip conductor. 14. A high-frequency semiconductor circuit package obtained by combining at least two of claims 1 to 13.